KR20020084103A - 초 미세 입체구조의 제조 방법 및 그 장치 - Google Patents
초 미세 입체구조의 제조 방법 및 그 장치 Download PDFInfo
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- KR20020084103A KR20020084103A KR1020027009695A KR20027009695A KR20020084103A KR 20020084103 A KR20020084103 A KR 20020084103A KR 1020027009695 A KR1020027009695 A KR 1020027009695A KR 20027009695 A KR20027009695 A KR 20027009695A KR 20020084103 A KR20020084103 A KR 20020084103A
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- Prior art keywords
- dimensional structure
- fine
- ultra
- gas
- forming
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y30/00—Apparatus for additive manufacturing; Details thereof or accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y70/00—Materials specially adapted for additive manufacturing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
- C23C16/047—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4418—Methods for making free-standing articles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using ion beam radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Nanotechnology (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (10)
- 집속 이온빔 장치를 이용한 디포지션 기술로서, 원료 가스로서 페난트렌(phenanthrene)을, 이온으로서 액체금속 이온원 으로부터 5 내지 100keV의 갈륨 또는 금, 실리콘, 베릴륨 등의 이온을 이용하고, 가스 분사 밀도를 종래의 디포지션의 경우보다 5 내지 10배 정도 높임으로써, 용이하고도 신속 형성을 가능하게 한 것을 특징으로 하는 초 미세 입체구조의 형성 방법.
- 제 1항에 있어서,가스 분사 방향을 등방향 또는 대칭적으로 하여 실행하도록 한 것을 특징으로 하는 초 미세 입체구조의 형성 방법.
- 제 1항 또는 제 2항에 있어서,이온빔의 스폿 전류 밀도를 1A/cm2이하로 하는 동시에, 주사 속도를 초저속으로 하고, 또한 빔의 스텝 폭을 빔 정지시에 성장하는 디포짓층 기둥의 직경보다 작게 함으로써, 입체구조물의 형성을 가능하게 하는 것을 특징으로 하는 초 미세 입체구조의 형성 방법,단, 여기에서 말하는 초저속의 주사 속도란 빔 정지시의 디포짓층 기둥의 성장 속도의 1/10 내지 10배 정도의 값이다.
- 제 3항에 있어서,빔 전류를 1pA 이하로 함으로써, 디포짓층 기둥의 지름이 100nm 이하의 입체구조물 형성을 가능하게 하는 것을 특징으로 하는 초 미세 입체구조의 형성 방법.
- 제 1항 내지 제 4항 중 어느 한 항에 있어서,집속 이온빔 장치로서 5축(x, y, z방향 및 회전, 경사) 구동의 시료 스테이지를 갖는 것을 채용하고, 시료에 조사되는 이온빔의 영역을 시료의 성장 방향에 따라 시프트시키는 동시에, 성장에 따라 가공 영역에 빔의 초점을 정합시키도록 우선 이온 광학계를 제어하고, 그 범위를 초과할 때에는 상기 스테이지를 구동하도록 하여 입체구조물을 형성하는 것을 특징으로 하는 초 미세 입체구조의 형성 방법,
- 제 1항 내지 제 5항에 기재된 초 미세 입체구조의 형성 방법에 의해 형성된 입체구조물을 진공중에서 600도 이상으로 가열하여, 주입된 갈륨 원소를 미소한 액적으로서 응집시킨 후, 다시 900 내지 1000℃로 가열함으로써 증발 제거하는 것을 특징으로 하는 초 미세 입체구조의 가공 방법.
- 제 1항 내지 제 5항에 기재된 초 미세 입체구조의 형성 방법에 의해 형성된 입체구조물을 진공중에서 600도 이상으로 가열하여, 주입된 갈륨 원소를 미소한 액적으로 응집시킨 후, 할로겐 가스를 분사하여 할로겐화 갈륨으로서 휘발 제거하는것을 특징으로 하는 초 미세 입체구조의 가공 방법.
- 제 1항 내지 제 5항에 기재된 초 미세 입체구조의 형성 방법에 의해 형성된 입체구조물을 진공중에서 600도 이상으로 가열하여, 주입된 갈륨 원소를 미소한 액정으로 응집시킨 후, 냉각하여 알카리 수용액에 담가서 용해 제거하는 것을 특징으로 하는 초 미세 입체구조의 가공 방법.
- 제 1항 내지 제 8항에 기재된 초 미세 입체구조의 형성 방법에 의해 형성된 입체구조물에 도금 또는 다른 CVD법에 의해 원하는 재질의 층을 형성시키는 것을 특징으로 하는 초 미세 입체구조의 가공 방법.
- 집속 이온빔 장치를 이용한 디포지션 기술로서, 원료 가스로서 페난트렌을, 이온으로서 액체금속 이온원 으로부터 5 내지 100keV의 갈륨 또는 금, 실리콘, 베릴륨 등의 이온을 사용하고, 가스 분사 밀도를 상기 페난트렌 가스 용기의 온도를 상기 페난트렌 가스가 석출하지 않는 한계 온도보다 낮게 설정함으로써, 용이하고도 신속 형성을 가능하게 한 것을 특징으로 하는 초 미세 입체구조의 형성 방법,
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000363573 | 2000-11-29 | ||
JPJP-P-2000-00363573 | 2000-11-29 | ||
PCT/JP2001/010346 WO2002044079A1 (fr) | 2000-11-29 | 2001-11-27 | Procédé et dispositif de fabrication de structure tridimensionnelle ultra-fine |
Publications (2)
Publication Number | Publication Date |
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KR20020084103A true KR20020084103A (ko) | 2002-11-04 |
KR100799014B1 KR100799014B1 (ko) | 2008-01-28 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020027009695A KR100799014B1 (ko) | 2000-11-29 | 2001-11-27 | 초 미세 입체구조의 제조 방법 및 그 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7326445B2 (ko) |
JP (1) | JP4209675B2 (ko) |
KR (1) | KR100799014B1 (ko) |
TW (1) | TW593738B (ko) |
WO (1) | WO2002044079A1 (ko) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2018070635A1 (ko) * | 2016-10-12 | 2018-04-19 | 한국기계연구원 | 입체형 코일 구조를 갖는 자기장 발생 소자 및 그 제조 방법 |
Families Citing this family (21)
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JP4199440B2 (ja) * | 2001-06-29 | 2008-12-17 | 日本電気株式会社 | 超強度弾性ダイヤモンド状炭素の形成方法 |
JP4302933B2 (ja) * | 2002-04-22 | 2009-07-29 | 株式会社日立ハイテクノロジーズ | イオンビームによる穴埋め方法及びイオンビーム装置 |
EP1598857A4 (en) * | 2003-02-28 | 2008-11-26 | Shinji Matsui | MANUFACTURING METHOD FOR AN ANTENNA AND MANUFACTURING EQUIPMENT FOR AN ANTENNA |
JP2004345009A (ja) * | 2003-05-21 | 2004-12-09 | Japan Science & Technology Agency | 微小立体構造マニピュレータ |
US6926935B2 (en) * | 2003-06-27 | 2005-08-09 | Fei Company | Proximity deposition |
EP1622184B1 (en) * | 2004-07-28 | 2011-05-18 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Emitter for an ion source and method of producing same |
JP2006123150A (ja) * | 2004-11-01 | 2006-05-18 | National Institute For Materials Science | 電子ビーム誘起蒸着法を用いたナノ構造作成制御方法 |
JP4627682B2 (ja) * | 2005-05-27 | 2011-02-09 | 株式会社日立ハイテクノロジーズ | 試料作製装置および方法 |
US20070036060A1 (en) * | 2005-08-11 | 2007-02-15 | Tdk Corporation | Data recording method, data reproducing method, data recording apparatus, data reproducing apparatus, and information recording medium |
JP2007069325A (ja) * | 2005-09-08 | 2007-03-22 | Japan Science & Technology Agency | 微小電磁装置の作製方法及びそれによって作製される微小電磁装置 |
JP5600371B2 (ja) * | 2006-02-15 | 2014-10-01 | エフ・イ−・アイ・カンパニー | 荷電粒子ビーム処理のための保護層のスパッタリング・コーティング |
GB2460855B (en) * | 2008-06-11 | 2013-02-27 | Kratos Analytical Ltd | Electron spectroscopy |
EP2226830B1 (en) * | 2009-03-06 | 2014-01-08 | FEI Company | Charged particle beam processing |
JP5335508B2 (ja) * | 2009-03-25 | 2013-11-06 | 一般財団法人ファインセラミックスセンター | 緊張化した空中配線の形成方法、荷電粒子線プリズムとその製造方法、荷電粒子線の干渉縞を用いた観察方法、電子顕微鏡および電子顕微鏡における干渉縞の形成方法 |
US8617668B2 (en) * | 2009-09-23 | 2013-12-31 | Fei Company | Method of using nitrogen based compounds to reduce contamination in beam-induced thin film deposition |
US9123500B2 (en) * | 2012-03-31 | 2015-09-01 | Fei Company | Automated ion beam idle |
US20180143147A1 (en) * | 2015-05-11 | 2018-05-24 | Board Of Regents, The University Of Texas System | Optical-coherence-tomography guided additive manufacturing and laser ablation of 3d-printed parts |
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2001
- 2001-11-27 WO PCT/JP2001/010346 patent/WO2002044079A1/ja active Application Filing
- 2001-11-27 JP JP2002546029A patent/JP4209675B2/ja not_active Expired - Lifetime
- 2001-11-27 US US10/220,895 patent/US7326445B2/en not_active Expired - Lifetime
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Publication number | Priority date | Publication date | Assignee | Title |
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WO2018070635A1 (ko) * | 2016-10-12 | 2018-04-19 | 한국기계연구원 | 입체형 코일 구조를 갖는 자기장 발생 소자 및 그 제조 방법 |
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US20030161970A1 (en) | 2003-08-28 |
US7326445B2 (en) | 2008-02-05 |
JP4209675B2 (ja) | 2009-01-14 |
WO2002044079A1 (fr) | 2002-06-06 |
KR100799014B1 (ko) | 2008-01-28 |
TW593738B (en) | 2004-06-21 |
JPWO2002044079A1 (ja) | 2004-04-02 |
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