KR20020071726A - 노광 방법 및 노광 장치 - Google Patents

노광 방법 및 노광 장치 Download PDF

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Publication number
KR20020071726A
KR20020071726A KR1020020009212A KR20020009212A KR20020071726A KR 20020071726 A KR20020071726 A KR 20020071726A KR 1020020009212 A KR1020020009212 A KR 1020020009212A KR 20020009212 A KR20020009212 A KR 20020009212A KR 20020071726 A KR20020071726 A KR 20020071726A
Authority
KR
South Korea
Prior art keywords
pattern
mark
exposure
reticle
substrate
Prior art date
Application number
KR1020020009212A
Other languages
English (en)
Korean (ko)
Inventor
호리가즈히코
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20020071726A publication Critical patent/KR20020071726A/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
    • G03F9/7019—Calibration
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/708—Mark formation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7084—Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
KR1020020009212A 2001-03-07 2002-02-21 노광 방법 및 노광 장치 KR20020071726A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001063024A JP4635354B2 (ja) 2001-03-07 2001-03-07 露光方法及び継ぎ誤差計測方法並びにデバイス製造方法
JPJP-P-2001-00063024 2001-03-07

Publications (1)

Publication Number Publication Date
KR20020071726A true KR20020071726A (ko) 2002-09-13

Family

ID=18922076

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020020009212A KR20020071726A (ko) 2001-03-07 2002-02-21 노광 방법 및 노광 장치

Country Status (4)

Country Link
JP (1) JP4635354B2 (ja)
KR (1) KR20020071726A (ja)
CN (1) CN1276305C (ja)
TW (1) TW526541B (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100812322B1 (ko) * 2005-06-01 2008-03-10 미쓰비시덴키 가부시키가이샤 검사 방법 및 이것을 사용한 액정표시장치의 제조 방법
CN101930182A (zh) * 2009-06-23 2010-12-29 丰和工业株式会社 内层基板用曝光装置以及基板和掩膜的剥离方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100445871C (zh) * 2004-10-28 2008-12-24 探微科技股份有限公司 接合晶片的方法
JP4541847B2 (ja) * 2004-11-22 2010-09-08 Ｏｋｉセミコンダクタ株式会社 位置合わせ精度検出方法
JP2006203032A (ja) * 2005-01-21 2006-08-03 Victor Co Of Japan Ltd 素子の製造方法
JP5836678B2 (ja) * 2011-07-19 2015-12-24 三菱電機株式会社 半導体装置の製造方法
CN103092005B (zh) * 2013-01-21 2015-01-21 深圳市华星光电技术有限公司 玻璃基板的曝光对位方法
CN105093847B (zh) * 2015-08-04 2017-05-10 深圳市华星光电技术有限公司 曝光机
CN111279462B (zh) * 2017-10-26 2023-07-14 株式会社新川 接合装置
JP7240166B2 (ja) * 2018-12-18 2023-03-15 キヤノン株式会社 決定方法、露光方法、露光装置、および物品製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0629176A (ja) * 1992-07-09 1994-02-04 Toshiba Corp 半導体素子の露光方法
JPH088174A (ja) * 1994-06-16 1996-01-12 Nikon Corp パターン位置検出方法
JPH10177946A (ja) * 1996-12-19 1998-06-30 Sony Corp 露光精度測定パターン及び露光精度測定方法
JP2000277425A (ja) * 1999-03-26 2000-10-06 Nec Corp 電子線描画方法とその装置
JP2000340482A (ja) * 1999-05-26 2000-12-08 Sony Corp 露光方法及びこの方法を用いた露光装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100812322B1 (ko) * 2005-06-01 2008-03-10 미쓰비시덴키 가부시키가이샤 검사 방법 및 이것을 사용한 액정표시장치의 제조 방법
CN101930182A (zh) * 2009-06-23 2010-12-29 丰和工业株式会社 内层基板用曝光装置以及基板和掩膜的剥离方法

Also Published As

Publication number Publication date
TW526541B (en) 2003-04-01
CN1276305C (zh) 2006-09-20
JP4635354B2 (ja) 2011-02-23
CN1374561A (zh) 2002-10-16
JP2002270483A (ja) 2002-09-20

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