TW526541B - Exposure method and exposure apparatus - Google Patents

Exposure method and exposure apparatus Download PDF

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Publication number
TW526541B
TW526541B TW091102055A TW91102055A TW526541B TW 526541 B TW526541 B TW 526541B TW 091102055 A TW091102055 A TW 091102055A TW 91102055 A TW91102055 A TW 91102055A TW 526541 B TW526541 B TW 526541B
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Taiwan
Prior art keywords
pattern
mark
exposure
substrate
patterns
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TW091102055A
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Chinese (zh)
Inventor
Kazuhiko Hori
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Nikon Corp
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

An exposure method is provided, which is suitable for forming a desired pattern on a substrate P with patterns A, B connected to each other. This method includes a provisional exposure process to form a first mark MK different from the patterns A, B and the connected patterns A, B, and a setting process for setting an amount of correction, when the connected patterns A, B are exposed, based on the relative position relation between the first mark MK and the patterns A, B.

Description

526541 8845pif.doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（I ) 發明領域 本發明是有關於一種在半導體元件或液晶元件的製程 中於基底上曝光出罩幕圖案之曝光方法及曝光裝置，且特 別是有關於一種藉由使複數個分隔圖案之相同部分相互接 合於基板上以曝光出大面積的圖案，亦即適合用於進行畫 面合倂時之曝光方法及曝光裝置。 發明背景 習知的曝光裝置爲了對應作爲曝光對象的感光性基板 的大型化，而使用所謂的畫面合倂法。此方法係將感光性 基板之曝光區域分割成複數個單位區域（每次曝光所照射 之區域（Shot)) ’然後重複對各個單位之曝光區域進行複數 次的曝光，以將圖案合倂成爲具有最終所希望的大面積之 圖案。在進行畫面合倂之情況下，由於圖案投影用光柵 (Reticle)之圖形誤差、投影光學系統之失真（Distortion)、 決定感光性基板位置之承載台（Stage)的位置決定誤差等， 因此於各個單位曝光區域的邊界位置接合之圖案會有缺口 產生之情形。在此，爲了防止圖案缺口之產生，而使各單 位曝光區域之邊界有少量之重疊，亦即是藉由使各單位曝 光區域部分在重複之情況下進行畫面合倂。 在進行上述畫面合倂時，最需要注意的重點是必須極 力的縮小畫面合倂部分的圖案間偏移，以確保畫面接合之 準確度。此畫面合倂部分的圖案間偏移是由光柵之製造誤 差或投影光學系統之透鏡像差、決定感光性基板等材料位 置之承載台的位置決定準確度·滑動準確度等所造成。亦 4 --------------------訂---------線· (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 526541 8845pif.doc/006 A7 B7 五、發明說明（l) 即，在上述之畫面合倂中，相鄰兩個圖案間之相對位置偏 差會造成圖案之接頭部分產生落差，而損害所製造之元件 的特性。而且’在半導體兀件與液晶顯示元件的製造中， 由於使畫面合倂之單層圖案重疊成複數層（通常在液晶面 板的製造中爲5至8層），因此各層中單位曝光區域的重 疊誤差會使得圖案之接頭部分產生不連續變化。在此種情 況下’特別是對於主動式矩陣（Active Matrix)液晶元件而 言，圖案接頭部分的對比（Contrast)不連續變化會降低元件 的品質。 一般’就第二層以後的曝光層之畫面接合準確度而 言，由於知道曝光照射區域與曝光照射區域之重疊準確度 差是很重要的，因此可以先量測形成於第一層之對準標記 (Alignment Mark)，再從其量測結果求出第二層以後的層 之光柵及感光性基板的偏差(Offset)以進行補正。亦g卩，業寸 第二層（例如是源極•汲極層）進行接合曝光時，由於形成 於爲前一層之第一層（例如是閘極層）中的對準標記存在有 標準’因此以軸外(Offaxis)等檢測器（Sensor)量測此對準朽 記，可以使所接合之源極•汲極層圖案與各自對應之閘極 層圖案增進至高準確度重疊，結果可以使第二層之圖案達 到高準確度接合。 k 然而，第二層以後之圖案接合準確度係受第一層中圖 案的接合準確度影響。在一般的曝光處理中，在第一層中 進行畫面接合時，由於基底並沒有基準，使得曝光步驟會 受到機械準確度或圖案之製造準確度影響，因此要使接^ 5 裝--------訂-------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 的7公釐） 經濟部智慧財產局員工消費合作社印製 526541 8845pif.doc/006 A7 B7 五、發明說明) 準確度增進至高準確度是很困難的。有鑑於此，習知是藉 由例如下述之兩種方法以確保第一層中的接合準確度。 (1)製程中 就光柵之製造誤差或投影光學系統之透鏡像差而言， 如第10圖所示，在接合圖案A至圖案D各自兩邊以畫面 合倂成所希望之畫板(Panel)圖案的情況下，如第11圖所 示，具體而言，在光柵內之圖案A附近的複數個特殊圖案 係爲沿著接合邊配置之複數個二維標記，於是從搭載被曝 光物（感光性基板）之承載台附近測定上述標記之位置，並 統計處理各個標記之設計位置與測定結果之位置的偏離誤 差，可以求出能夠使光柵上之圖案於承載台上曝光出較理 想之格子形狀的補正參數（偏移（Shift)、旋轉、倍率等）。 此外，就從承載台附近量測標記位置之方法而言，可以利 用所謂影像孔隙感測器(Image Slit Sensor，ISS)量測等方 法，此方法係於承載台上設置具有孔隙標記（Slit Mark)之 基準標記構件，然後從基準標記構件下方照射與曝光波長 同一波長之檢測光，並一邊掃瞄移動承載台，一邊監視通 過孔隙標記、投影光學系統、光柵上之標記而入射至光量 檢測器之檢測光，以對應承載台座標系統計算標記之位 置。 而且，就圖案B至D而言，也可以和圖案A —樣沿 著接合邊配置標記，再利用量測標記之位置而求出能夠使 圖案B至D曝光出較理想之格子形狀的補正參數。此外， 就:決定感光性基板位置之承載台的位置決定準確度或滑動 6 本紙張尺度國國家標準（CNS)A4 ϋ2ΐο χ 297公髮） ---I----‘丨丨裝-----I丨丨訂-------- (請先閱讀背面之注意事項再填寫本頁) 526541 8845pif.doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（#) 準確度而言’在S周整時能夠盡量縮小誤差以維持畫面接合 準確度。 (2)測試曝光 在實施製程曝光之前，先實施以圖案A至D畫面合 倂成所希望圖案之接合曝光，並以測定器量測其接合部分 以求出如第12圖所示之位置偏移量Z，以此位置偏移量z 作爲來自設計値之偏差，而作爲一種在製程曝光中於曝光 控制資料的光柵部分輸入偏差的方法。 發明欲解決之課題 然而，上述習知的曝光方法及曝光裝置存在有下述問 題。 在上述（1)之技術中，由於實際上是無法測定轉移後之 圖案A至D、無法量測曝光後之圖案、以及利用ISS量測 等之光學原理量測等原因，即使根據補正參數進行曝光， 實際上經曝光後圖案也會產生來自設計値之偏差。其中， 有幾個考慮的原因例如是在量測原理中之基本誤差或再現 性之極限、在製程條件中感光性基板變形所造成之影響、 實際圖案與量測用標記之製造誤差等。 而且，在上述(2)之技術中，於上述第一層中進行畫面 合倂之情況下，由於基底中並沒有基準而難以加強接合準 確度，因此即使採用例如在第一層另外設置一感測器以檢 測曝光圖案之一個位置，然後根據量測之圖案位置以曝光 出其他圖案之方法，由於通常圖案之形狀在每一層中大都 會往例如X方向或Y方向之單一方向延伸，因此要從X、 7 · n I n I ϋ ammf 一 δτ · I in an ϋ I (請先閱讀背面之注咅3事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A‘4規格（210 X 297公釐） 526541 A7 8845pif.doc/〇〇6 五、發明說明（f) Y兩方向量測上述圖案之一個位置是很困難的。於是，對 於無法量測之方向（X方向或Υ方向）而言，是無法充分的 增進接合準確度。 根據上述之理由，上述（1)、（2)之技術也無法充分的 作爲接合準確度之增進方法。 因此，有鑑於上述之問題點，本發明之目的係提供一 種曝光方法及曝光裝置，於基板上接合圖案以進行畫面合 倂時，可以正確的增進接合準確度。 發明槪述 爲了達成上述目的，本發明之實施例係採用安裝有對 應第1圖至第12圖的結構。 本發明之曝光方法，適用於在基板(Ρ)上接合圖案(Α〜D) 以曝光出所希望圖案，其特徵在於此方法包括進行一預備 曝光製程以於基板上曝光出與圖案（Α〜D)不同之第一標記 (ΜΚ)和接合圖案（A〜D)、以及進行一設定製程，此設定製 程係根據基板上所曝光之第一標記（MK)與圖案（A〜D)之間 的相位置關係，設定曝光接合圖案(A〜D)時之補正量。 本發明之曝光裝置，適用於在基板(P)上接合圖案(A〜D) 以曝光出所希望圖案，其特徵在於此裝置包括一記憶裝置 (33)與一補正裝置（23)。記億裝置（33)可根據基板上所曝光 之與圖案（A〜D)不同之第一標記（MK)和圖案（A〜D)之間的 相對位置關係，記憶曝光接合圖案（A〜D)時之補正量。補 正裝置（23)可根據記憶於記憶裝置（33)內之補正量於基板 (P)上接合圖案。 8 丨丨 i 丨丨丨丨丨 r —丨^||^ · i I — i — — — I — — i - · (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度^^®國家標準（CNS)A4g^1G χ 297l：f") 526541 8845pif.doc/006 八/ _________ B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（〔） 因此’在本發明之曝光方法及曝光裝置中，舉例來說， 以往X方向及Y方向延伸之二維標記作爲第一標記(MK)， 同時使圖案（A〜D)曝光於基板(P)上，藉由量測曝光後圖案 (A〜D)與第一標記（MK)可以求出作爲二維補正量之圖案 (A〜D)接合偏差。於是，實際曝光時，在利用此補正量補 正之狀態下接合圖案，可以充分的增進接合準確度。而且， 由於本發明在求出補正量時是使用實際的轉移圖案，因此 可以在實際曝光時直接求出必要的補正量。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂，下文特舉較佳實施例，並配合所附圖式，作詳細 說明如下： 圖式之簡單說明 第1圖爲繪示本發明之一較佳實施例之曝光裝置的槪 略結構圖。 第2A圖爲繪示本發明之曝光方法所使用之具有標記 的光柵平面圖。 第2B圖爲繪示標記之詳細圖。 第3圖爲繪示於基底上曝光出複數個圖案與標記之平 面圖。 第4A圖爲繪示閘極圖案之部分放大圖。 第4B圖爲繪示閘極圖案與標記之重疊部分放大圖。 第5圖爲繪示隔著分割線曝光之閘極圖案與標記之部 分放大圖。 第6圖爲繪示理想格子與圖案之相對位置關係的示意 9 ---------——·#裝 (請先閱讀背面之注意事項再填寫本頁) ----訂------526541 8845pif.doc / 006 A7 B7 Printed by the Consumer Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Invention (I) Field of the Invention The present invention relates to a method for exposing a mask pattern on a substrate during the manufacturing process of a semiconductor element or a liquid crystal element Exposure method and exposure device, and more particularly, it relates to a method for exposing a large area pattern by bonding the same parts of a plurality of separated patterns to each other on a substrate, that is, an exposure method and a method suitable for performing screen combination and Exposure device. BACKGROUND OF THE INVENTION A conventional exposure apparatus uses a so-called screen combining method to cope with an increase in the size of a photosensitive substrate to be exposed. This method divides the exposure area of the photosensitive substrate into a plurality of unit areas (the area irradiated by each exposure (Shot)). Then, the exposure area of each unit is repeatedly exposed multiple times to combine the patterns into The desired large-area pattern. When the screen is combined, the pattern error of the pattern projection grating (Reticle), the distortion of the projection optical system (Distortion), the position determination error of the stage (Stage) that determines the position of the photosensitive substrate, etc. There may be gaps in the patterns joined at the boundary positions of the unit exposure area. Here, in order to prevent the occurrence of the pattern notch, there is a small overlap between the boundaries of the exposure areas of each unit, that is, the screens are combined under the condition that the exposure areas of each unit are repeated. When performing the above-mentioned picture combination, the most important point to pay attention to is to minimize the shift between the patterns of the combined part of the picture to ensure the accuracy of the picture joining. The shift between the patterns in the combined part of this screen is caused by the manufacturing error of the grating, the lens aberration of the projection optical system, and the position of the stage that determines the position of the material such as the photosensitive substrate. The accuracy and sliding accuracy are caused. Also 4 -------------------- Order --------- Line · (Please read the precautions on the back before filling this page) This paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) Printed by the Consumers' Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs 526541 8845pif.doc / 006 A7 B7 V. Invention description (l) That is, in the above picture combination The relative position deviation between two adjacent patterns will cause a drop in the joint portion of the pattern, which will damage the characteristics of the manufactured component. Moreover, in the manufacture of semiconductor elements and liquid crystal display elements, since the single-layered pattern of the screen is overlapped into a plurality of layers (usually 5 to 8 layers in the manufacture of liquid crystal panels), the unit exposure area in each layer overlaps. The error will cause discontinuous changes in the joint portion of the pattern. In this case, 'especially for an active matrix liquid crystal element, the discontinuous change in the contrast of the pattern joint portion will degrade the quality of the element. In general, as for the accuracy of the screen bonding of the exposure layer after the second layer, since it is important to know the difference in the accuracy of the overlap between the exposure irradiation area and the exposure irradiation area, it is possible to measure the alignment formed on the first layer first. Alignment Mark, and then from the measurement results, the offsets (offsets) of the gratings and photosensitive substrates of the layers after the second layer are calculated for correction. Also, when the second layer (for example, the source / drain layer) is subjected to the bonding exposure, there is a standard because of the alignment mark formed in the first layer (for example, the gate layer) that is the previous layer. Therefore, measuring this alignment immortal with a sensor such as Offaxis can increase the accuracy of the source / drain layer pattern and the corresponding gate layer pattern to a high degree of overlap. As a result, The pattern of the second layer achieves high-accuracy bonding. k However, the accuracy of pattern joining after the second layer is affected by the accuracy of pattern joining in the first layer. In general exposure processing, when the screen is bonded in the first layer, because the substrate has no reference, the exposure step will be affected by mechanical accuracy or pattern manufacturing accuracy. ---- Order -------- (Please read the notes on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (21mm 7mm) Intellectual Property of the Ministry of Economic Affairs Printed by the Bureau's Consumer Cooperatives 526541 8845pif.doc / 006 A7 B7 V. Description of the invention) It is difficult to improve the accuracy to the highest accuracy. In view of this, it is known to ensure the accuracy of joining in the first layer by, for example, the following two methods. (1) As far as the manufacturing error of the grating or the lens aberration of the projection optical system is concerned during the manufacturing process, as shown in FIG. 10, the two sides of the bonding pattern A to the pattern D are combined with the screen to form the desired panel pattern. In the case of FIG. 11, specifically, the plurality of special patterns near the pattern A in the grating are a plurality of two-dimensional marks arranged along the joint edge, so the exposed object (photosensitive The position of the above mark is measured near the stage of the substrate, and the deviation error between the design position of each mark and the position of the measurement result is statistically processed. It is possible to obtain a pattern that can expose the pattern on the grating on the stage to a more ideal grid shape. Correction parameters (Shift, rotation, magnification, etc.). In addition, as for the method of measuring the position of the marker from the vicinity of the bearing platform, a method such as an image slit sensor (ISS) measurement can be used. This method is to set a Slit Mark on the bearing platform. ), And then irradiate the detection light with the same wavelength as the exposure wavelength from below the reference mark member, and scan the moving carrier while monitoring the incident light detector through the aperture mark, the projection optical system, and the mark on the grating. The detection light is used to calculate the position of the mark according to the coordinate system of the supporting platform. In addition, as for the patterns B to D, it is also possible to arrange the marks along the joint edge in the same manner as the pattern A, and then use the position of the measurement mark to determine the correction parameters that can expose the patterns B to D to a more ideal grid shape. . In addition, regarding: the position of the stage that determines the position of the photosensitive substrate determines the accuracy or sliding 6 national paper standard (CNS) A4 ϋ2ΐο χ 297 issued by paper size --- I ---- '丨 丨 installation-- --- I 丨 丨 Order -------- (Please read the notes on the back before filling in this page) 526541 8845pif.doc / 006 A7 B7 Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (#) As far as accuracy is concerned, the error can be minimized to maintain the accuracy of the screen joint during the whole week. (2) Test exposure Before implementing the process exposure, first perform the joint exposure that combines the patterns A to D to form the desired pattern, and measure the joint with a measuring device to determine the position deviation as shown in Figure 12. The shift amount Z is used as a deviation from the design frame as the position shift amount z, and as a method for inputting the deviation into the raster portion of the exposure control data during the process exposure. Problems to be Solved by the Invention However, the conventional exposure method and exposure apparatus described above have the following problems. In the technique of (1) above, it is actually impossible to measure the patterns A to D after the transfer, the pattern after the exposure cannot be measured, and the optical principle measurement using the ISS measurement, etc. Exposure, in fact, the pattern will also have deviations from the design after exposure. Among them, there are several reasons to consider, such as the basic error in the measurement principle or the limit of reproducibility, the influence caused by the deformation of the photosensitive substrate in the process conditions, and the manufacturing error of the actual pattern and the measurement mark. Moreover, in the technique of (2) above, in the case where the screen is combined in the first layer, it is difficult to enhance the accuracy of the joint because there is no reference in the base, so even if it is used to provide a sense The method of detecting a position of the exposure pattern and then exposing other patterns according to the measured pattern position. Because the shape of the general pattern in each layer generally extends in a single direction such as the X direction or the Y direction, it is necessary to From X, 7 · n I n I ϋ ammf-δτ · I in an ϋ I (Please read Note 3 on the back before filling out this page) This paper size applies Chinese National Standard (CNS) A'4 specification (210 X 297 mm) 526541 A7 8845pif.doc / 〇〇6. Description of the invention (f) It is difficult to measure one position of the above pattern in both directions of Y. Therefore, for directions that cannot be measured (X direction or Υ direction), it is not possible to sufficiently improve the joining accuracy. For the reasons described above, the techniques of (1) and (2) are not sufficient as a method for improving the accuracy of joining. Therefore, in view of the above-mentioned problems, an object of the present invention is to provide an exposure method and an exposure device, which can accurately improve the bonding accuracy when bonding patterns on a substrate for screen bonding. SUMMARY OF THE INVENTION In order to achieve the above-mentioned object, the embodiment of the present invention employs a structure corresponding to FIGS. 1 to 12. The exposure method of the present invention is suitable for bonding a pattern (Α ~ D) on a substrate (P) to expose a desired pattern. The method is characterized in that the method includes performing a preliminary exposure process to expose the pattern and the pattern (Α ~ D) on the substrate. ) Different first marks (MG) and bonding patterns (A ~ D), and a setting process, which is based on the difference between the first marks (MK) and patterns (A ~ D) exposed on the substrate The phase position relationship sets the correction amount when the exposure bonding pattern (A to D) is exposed. The exposure device of the present invention is suitable for bonding patterns (A to D) on a substrate (P) to expose a desired pattern, and is characterized in that the device includes a memory device (33) and a correction device (23). The billion-memory device (33) can memorize the exposure bonding pattern (A to D) according to the relative positional relationship between the first mark (MK) and the pattern (A to D) that are different from the pattern (A to D) exposed on the substrate. ). The correction device (23) can join the pattern on the substrate (P) according to the correction amount stored in the memory device (33). 8 丨 丨 i 丨 丨 丨 丨 丨 r — 丨 ^ || ^ · i I — i — — — I — — i-(Please read the precautions on the back before filling this page) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs Cooperative printed paper size ^^ ® National Standard (CNS) A4g ^ 1G x 297l: f ") 526541 8845pif.doc / 006 8 / _________ B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of invention (()) Therefore, in the exposure method and exposure device of the present invention, for example, a conventional two-dimensional mark extending in the X direction and the Y direction is used as the first mark (MK), and at the same time, the pattern (A to D) is exposed on the substrate (P) In the above, by measuring the pattern (A to D) after exposure and the first mark (MK), it is possible to obtain the joint deviation of the pattern (A to D) as a two-dimensional correction amount. Therefore, during actual exposure, the bonding pattern can be sufficiently improved by using the correction amount to correct the bonding pattern. Furthermore, since the present invention uses an actual transfer pattern when calculating the correction amount, it is possible to directly obtain the necessary correction amount during actual exposure. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, the preferred embodiments are described below in detail with the accompanying drawings as follows: Brief description of the drawings FIG. 1 is a drawing A schematic structural diagram of an exposure apparatus according to a preferred embodiment of the present invention is shown. Fig. 2A is a plan view showing a grating with marks used in the exposure method of the present invention. FIG. 2B is a detailed diagram showing the marks. Figure 3 is a plan view showing a plurality of patterns and marks exposed on a substrate. FIG. 4A is an enlarged view showing a part of the gate pattern. FIG. 4B is an enlarged view showing the overlapping part of the gate pattern and the mark. Fig. 5 is an enlarged view showing a portion of a gate pattern and a mark exposed through a dividing line. Figure 6 is a schematic diagram showing the relative positional relationship between the ideal grid and the pattern 9 ------------- · # equipment (please read the precautions on the back before filling this page) ---- Order- -----

ϋ I #· 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公髮） 526541 8845pif.doc/006 A7 B7 五、發明說明（^)) 圖。 第7圖爲繪示呈現其他形狀之標記與閘極圖案之重疊 部分放大圖。 (請先閱讀背面之注意事項再填寫本頁) 第8圖爲繪示另一種標記之曝光方法說明圖。 第9圖爲繪示液晶顯示（半導體）元件製程之一實例的 流程圖。 第10圖爲繪示接合複數個圖案之示意圖。 第Π圖爲繪示形成於光柵上之圖案與二維標記的平 面圖。 第12圖爲繪示在接合圖案中產生之偏差示意圖。 圖式之標記說明： 9 :曝光裝置 10 :光源 11 :照明光學系統 12 :投影光學系統 13 :光柵承載台 14 :基板承載台 15 :瞬間開關 16、17反射鏡 經濟部智慧財產局員工消費合作社印製 18 :波長選擇濾光片 19 :光學積算器 20 :可變場光圈 21 :聚光器光學系統 22 :瞬間開關裝置驅動部 10 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 526541 8845pif.doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（及） 23 :控制裝置 24 :光束分裂器 25 :光柵承載台驅動系統 26a、26b :光柵對準系統 27 :承載台驅動裝置 28 :移動鏡 29 :雷射干涉計 30a、30b :自動聚焦系統 32 :標準標記構件 33 :記憶裝置 34 :鏡子 35 :聚光透鏡 36 :光纖 37 :光量感測器 38 :掃瞄線圖案 39 :閘極電極圖案 40 :區域 201、202、203、204、205、206 :步驟 A、B、C、D :圖案 DLX、DLY :分割線 K:理想格子 LX、LY、PX、PY :間距 MK :標記 OVLx、OVLy、OVRx、OVRy、OVUx、OVUy、OVDx、 本紙張尺度適用中國國家標準（CNS)A4規格mo X 297公釐） ---------‘---裝--------訂-丨 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 526541 8845pif·d〇c/〇〇6 A7 -------- B7 五、發明說明（°l ) OVDy :重疊偏差量 P ： 基板 R、 RT :光柵 XM :X標記 YM :Y標記 Z : 偏移量 齩佳實施你1 以下’請參照第1圖至第9圖，其係用以說明本 之曝光方法及曝光裝置的實施例。 又 、在此L藉由步進方式的曝光裝置，在液晶顯示元件製 ^用之玻璃基板（感光性基板）上（以下稱爲基板）利用直立 等倍j畫面合倂複數個光柵圖案之情況下爲實例作說明。 在此第1圖至第9圖中之構件與習知的第10圖至第12圖 相同者給予相同之符號，並省略其說明。 第1圖爲繪示用於製造液晶顯示元件之曝光裝置9的 槪略紀構圖。此曝光裝置9係爲對塗佈感光劑（光阻）之基 板(基底）P投影曝光出形成於光柵(罩幕)R內之液晶顯示元 件圖案的裝置，此裝置槪略的是由光源10、照明光學系統 11、投影光學系統12、光柵承載台（罩幕承載台）13以及基 板承載台（基底承載台）14所構成。其中，各自設定與投影 光學系統12之光軸平行者爲z軸，在光軸之垂直面中與 第1圖之紙面平行者爲X軸，在光軸之垂直面中與第1圖 之紙面垂直者爲Y軸。 光源10係爲產生作爲曝光光線的光束B之裝置，此 - 12 裝-----— —訂--- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 經濟部智慧財產局員工消費合作社印製 526541 8845pif.doc/006 A/ _ B7 五、發明說明（/0) 裝置是由超高壓水銀燈等構成。從光源10發射出之光束 B會射入照明光學系統11。 照明光學系統11是由可開關光束B的光線路徑之瞬 間開關（Shutter)15、反射鏡16、17、波長選擇濾光片18、 使光束B均一^化之光學積算器19(Optical Integrator)(繩眼 运I見（Fly-Eye Lens))、可變場光圈20、聚光器（Condenser) 光學系統21等所構成。藉由通過瞬間開關裝置驅動部22 之控制裝置23(補正裝置）控制瞬間開關裝置15，以驅動瞬 間開關裝置15開關光束B之光線路徑。然後，入射至照 明光學系統11之光束B會對應瞬間開關裝置15之開啓動 作’在波長選擇濾光片18中選擇曝光所需要之波長（g線 或h線、I線），並以光學積算器19使其亮度均一化。亮 度經過均一化之光束B透過光束分裂器(Beam Splitter)24 後’經聚光器光學系統21聚光，並通過可變場光圏20之 開口而重疊的照明於所規定光柵R上之照明區域。可變場 光圈20開口之位置及大小可利用通過遮蔽（Blind)驅動部 (未圖示）之控制裝置23來控制的。 光柵承載台13係爲保持光柵R之裝置，其可以利用 光柵承載台驅動系統25驅動，而能夠在χγ座標系統上 二維的移動。而且，在光柵承載台13之上方配置有作爲 光柵對準系統26a、26b之光電感測器。光柵對準系統26a、 26b係爲可照射與光源10發射之光束B具有相同波長之 對準光線，且其反射光可於CCD照相機進行受光畫像處 理之裝置。然後，本曝光裝置可以檢測出由鉻等以直線形 本紙張尺錢財目贿鮮(C^s)A4規格（21〇x 297公爱） - -. -- --------"---裝----- - -- 訂·--1---1 (請先閱讀背面之注意事項再填寫本頁) 526541 8845pif.doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（11) 狀所形成之光柵R上對準標記，再根據此檢測結果利用光 柵承載台驅動系統25驅動光柵承載台13,使光柵R對準（對 照位置）XY座標系統所設定之位置。 投影光學系統12使存在於光柵R之照明區域中圖案 的像在基板Ρ上成像。然後，塗佈於基板Ρ上之感光劑經 過感光後，使圖案之像轉移至基板上。此投影光學系統12 之成像特性(倍率等）可以藉由控制裝置23之控制而調整。 基板承載台14係爲保持基板Ρ之裝置，其可以利用 承載台驅動系統27驅動，而能夠在ΧΥ座標系統上二維 的移動。由於此基板承載台I4上配置有移動鏡28，從雷 射干涉計29發射之雷射光可經過移動鏡28反射而射回雷 射干涉計29，因此根據雷射之反射光與入射光的干涉可以 正確的量測基板承載台14之位置（基板Ρ之位置），且此雷 射干涉計29之量測結果會輸出至控制裝置23中。此外， 爲了簡便說明本實施例，在第1圖中只繪示出爲了量測基 板承載台14在X方向之位置的移動鏡28與雷射干涉計 29，當然也具備一組爲了量測Υ方向之位置的移動鏡與雷 射干涉計。 在投影光學系統I2與基板承載台I4之間設置有斜向 射入型自動聚焦系統30a、30b，此斜向射入型自動聚焦系 統30a、30b可在基板P的表面決定一般投影光學系統12 之光軸方向所設定之位置。亦即，在Z方向驅動基板承載 台14，以使基板P之被曝光面與投影光學系統12之焦點 面一致。 14 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） · 111II11 訂· 11111 (請先閱讀背面之注意事項再填寫本頁) 526541 ：845pif.doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（/z) 而且，在基板承載台14上，投影光學系統12之光軸 方向與相對之基板P被曝光面略一致的位置上設置有圓盤 狀之標準標記構件32。在此標準標記構件32內設置有爲 矩型形狀開口之孔隙標記（未圖示）。然後，在基板承載台 Μ中之標準標記構件32下方裝設鏡子34以及聚光透鏡 35，藉由光纖36所傳送之作爲檢測光的光束Β (曝光光線) 會從下方通過聚光透鏡35以及鏡子34而照明標準標記構 件32。 經過照明的標準標記構件32上之孔隙標記的像通過 投影光學系統12而逆投影於光柵R上。然後，透過光柵 R之光束Β通過聚光器光學系統21、反射鏡18後射入光 束分裂器24。射入光束分裂器24之光束Β，在光束分裂 器24內反射後，射入作爲光量感測器37之光電感測器。 光量感測器37對應所射入之光束Β強度而輸出電訊號至 控制裝置23。而且，光量感測器37係配置於與光柵R結 合之面。 控制裝置23利用從光量感測器37輸出之訊號與從雷 射干涉器29等輸出之訊號以檢測出光柵上標記之位置， 同時使用檢測出之標記位置與設計位置之偏差量進行設定 之運算處理（最小二乘法），以算出光柵R之旋轉補正量、 X Υ偏移補正量、X Υ倍率偏差量等之補正參數。然後。 控制裝置23根據所算出之補正量，透過光柵承載台驅動 系統25判斷光柵R之位置，並調整投影光學系統之成像 特性。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公髮） -------丨·—裝-----丨丨丨訂·—----1 (請先閱讀背面之注意事項再填寫本頁) 526541 8845pif.doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（β) 而且，控制裝置23可以總括控制上述投影光學系統 12、瞬間關裝麵動部22、遮_動部、光柵承載台驅 動系統25、承載台驅動裝置27 ;檢測基板承載台14之位 置；以及藉由透過基板承載台14旨二維的移動基板ρ， 以在基板Ρ上曝光形成由接合光柵R圖案所得到之設定圖 案。此外，在控制裝置23中設置有珂記錄程序（Sequence) 參數等之各種曝光資料(處方）或補正参數之記憶裝置33。 接著，說明在進行製程處理之前所進行之處理（預備 曝光製程）。此預備曝光製程一般可分爲在製程處理中使 欲曝光之閘極圖案曝光於基板p上之圖案曝光製程，以及 使標記MK曝光於已曝光出閘極圖案之基板p上之標記曝 光製程。此外，如第10圖所示，在基板p之第一層中， 圖案A〜D所接合成之閘極層（閘極圖案)是利用畫面合倂 而形成之圖案。 如第12圖所示，各個圖案a〜D具有往X方向延伸 之掃瞄線圖案（單位圖案、沿著掃瞄線圖案38並以固定 間距LX(例如是ΙΟΟ/zm之間距)排列之複數個閘極電極圖 案（單位圖案）與在Y方向以固定間距LY排列之同一閘極 圖案，通常接合圖案A〜D之分割線是設定成與掃瞄線圖 案交叉。而且，此閘極圖案在經曝光之基板；P上顯影後， 具有上述閘極圖案之光阻會殘留於基板上，亦即在光柵R 中形成正片圖案。 另一方面，第2A圖所繪示爲用於測試曝光之光柵 RT 〇 16 (請先閱讀背面之注意事項再填寫本頁)ϋ I # · This paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 issued) 526541 8845pif.doc / 006 A7 B7 V. Description of the invention (^)) Figure. Fig. 7 is an enlarged view showing an overlapping part of a mark and a gate pattern showing other shapes. (Please read the precautions on the back before filling out this page.) Figure 8 is a diagram illustrating the exposure method of another mark. Fig. 9 is a flowchart showing an example of a process for manufacturing a liquid crystal display (semiconductor) element. FIG. 10 is a schematic diagram showing joining a plurality of patterns. Figure Π is a plan view showing a pattern and a two-dimensional mark formed on the grating. FIG. 12 is a schematic diagram showing deviations generated in a bonding pattern. Description of the drawing symbols: 9: exposure device 10: light source 11: illumination optical system 12: projection optical system 13: grating stage 14: substrate stage 15: momentary switch 16, 17 reflectors Intellectual Property Bureau, Ministry of Economic Affairs, Employee Consumption Cooperative Printed 18: Wavelength Selective Filter 19: Optical Totalizer 20: Variable Field Aperture 21: Concentrator Optical System 22: Momentary Switching Device Driver 10 This paper size applies Chinese National Standard (CNS) A4 (210 x 297 mm) 526541 8845pif.doc / 006 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (and) 23: Control device 24: Beam splitter 25: Grating stage driving system 26a, 26b: Grating Alignment system 27: Stage drive device 28: Moving mirror 29: Laser interferometer 30a, 30b: Autofocus system 32: Standard marking member 33: Memory device 34: Mirror 35: Condensing lens 36: Optical fiber 37: Light volume sensing Detector 38: Scanning line pattern 39: Gate electrode pattern 40: Areas 201, 202, 203, 204, 205, 206: Steps A, B, C, D: Patterns DLX, DLY: Partition lines K: Ideal grid LX , LY, PX, PY: between Distance MK: Mark OVLx, OVLy, OVRx, OVRy, OFUx, OFUy, OVDx, This paper size is applicable to China National Standard (CNS) A4 specification mo X 297 mm) ---------'--- install -------- Order- 丨 (Please read the precautions on the back before filling this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperative of the Ministry of Economic Affairs 526541 8845pif · d〇c / 〇〇6 A7 ----- --- B7 V. Description of the invention (° l) OVDy: Overlap deviation P: Substrate R, RT: Grating XM: X mark YM: Y mark Z: Offset is best for you 1 or less' Please refer to Figure 1 FIG. 9 to FIG. 9 are examples for explaining the exposure method and exposure device of the present invention. In this case, a stepwise exposure device is used to combine a plurality of grating patterns on a glass substrate (photosensitive substrate) (hereinafter referred to as a substrate) for a liquid crystal display device using a vertical magnification j screen. The following is an example. Here, the components in Figures 1 to 9 are the same as those in the conventional Figures 10 to 12 and the same symbols are given, and descriptions thereof are omitted. FIG. 1 is a schematic diagram showing an exposure device 9 for manufacturing a liquid crystal display element. This exposure device 9 is a device for projecting and exposing a substrate (base) P coated with a photosensitizer (photoresist) to a pattern of a liquid crystal display element formed in a grating (mask) R. This device is omitted by the light source 10 , An illumination optical system 11, a projection optical system 12, a grating bearing stage (a curtain stage) 13 and a substrate bearing stage (a substrate bearing stage) 14. Among them, the z-axis is set parallel to the optical axis of the projection optical system 12, the X-axis is parallel to the paper surface of FIG. 1 in the vertical plane of the optical axis, and the paper surface of FIG. 1 is vertical to the optical axis. The vertical is the Y axis. The light source 10 is a device for generating the light beam B as the exposure light. This-12 pack -------order-(Please read the precautions on the back before filling this page) This paper size applies to Chinese national standards ( CNS) A4 specification (210 X 297 mm) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 526541 8845pif.doc / 006 A / _ B7 5. Description of the invention (/ 0) The device is composed of an ultra-high pressure mercury lamp. The light beam B emitted from the light source 10 is incident on the illumination optical system 11. The illumination optical system 11 is a shutter 15 capable of switching the light path of the light beam B, a shutter 15, a mirror 16, 17, a wavelength selection filter 18, and an optical integrator 19 (Optical Integrator) for uniformizing the light beam B ( Fly-Eye Lens), a variable field diaphragm 20, a condenser optical system 21 and the like. The instantaneous switching device 15 is controlled by the control device 23 (correction device) of the instantaneous switching device driving section 22 to drive the instantaneous switching device 15 to switch the light path of the light beam B. Then, the light beam B incident on the illumination optical system 11 will correspond to the opening action of the instantaneous switching device 15 'Select the wavelength (g-line, h-line, I-line) required for exposure in the wavelength selection filter 18 and calculate it optically The device 19 makes its brightness uniform. The light beam B with uniform brightness passes through the beam splitter 24 and is 'condensed by the condenser optical system 21' and illuminated through the variable field beam 20 to overlap the illumination on the specified grating R. region. The position and size of the opening of the variable field diaphragm 20 can be controlled by a control device 23 through a blind drive unit (not shown). The grating stage 13 is a device for holding the grating R. It can be driven by the grating stage driving system 25 and can move in two dimensions on the χγ coordinate system. Further, photodetectors as the grating alignment systems 26a and 26b are arranged above the grating stage 13. The grating alignment systems 26a and 26b are devices capable of irradiating alignment light having the same wavelength as that of the light beam B emitted from the light source 10, and the reflected light can be processed by the CCD camera for image processing of light reception. Then, the exposure device can detect chrome (C ^ s) A4 size (21〇x 297 public love) on a linear paper rule with chrome etc.--.--------- " --- Installation -------Order · --1 --- 1 (Please read the precautions on the back before filling out this page) 526541 8845pif.doc / 006 A7 B7 Staff Consumption of Intellectual Property Bureau, Ministry of Economic Affairs Cooperative prints 5. Alignment marks on the grating R formed by the description of the invention (11), and then according to the detection result, the grating bearing table driving system 25 is used to drive the grating bearing table 13 so that the grating R is aligned (control position) with the XY coordinates. The position set by the system. The projection optical system 12 forms an image of a pattern existing in the illumination area of the grating R on the substrate P. Then, after the photosensitive agent applied on the substrate P is subjected to photosensitivity, the image of the pattern is transferred to the substrate. The imaging characteristics (magnification, etc.) of the projection optical system 12 can be adjusted by the control of the control device 23. The substrate carrier 14 is a device for holding the substrate P. It can be driven by the carrier driving system 27 and can move in two dimensions on the XY coordinate system. Since a moving mirror 28 is arranged on the substrate stage I4, the laser light emitted from the laser interferometer 29 can be reflected by the moving mirror 28 and returned to the laser interferometer 29. Therefore, according to the interference of the reflected light of the laser and the incident light The position of the substrate carrier 14 (the position of the substrate P) can be accurately measured, and the measurement result of the laser interferometer 29 is output to the control device 23. In addition, in order to simplify the description of this embodiment, only the moving mirror 28 and the laser interferometer 29 for measuring the position of the substrate carrier 14 in the X direction are shown in FIG. 1. Of course, a set for measuring Directional moving mirror and laser interferometer. Between the projection optical system I2 and the substrate stage I4, an oblique-injection autofocus system 30a, 30b is provided. The oblique-injection autofocus system 30a, 30b can determine the general projection optical system 12 on the surface of the substrate P The position set by the optical axis direction. That is, the substrate stage 14 is driven in the Z direction so that the exposed surface of the substrate P and the focal plane of the projection optical system 12 coincide. 14 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) · 111II11 order · 11111 (Please read the precautions on the back before filling this page) 526541 ： 845pif.doc / 006 A7 B7 Wisdom of the Ministry of Economic Affairs Printed by the Consumers' Cooperative of the Property Bureau V. Description of the invention (/ z) Moreover, on the substrate supporting table 14, the optical axis direction of the projection optical system 12 and the exposed surface of the opposite substrate P are arranged in a disc shape. Of the standard marking member 32. A hole mark (not shown) having a rectangular shape opening is provided in the standard mark member 32. Then, a mirror 34 and a condenser lens 35 are installed below the standard marking member 32 in the substrate supporting table M. The light beam B (exposure light) transmitted as the detection light through the optical fiber 36 passes through the condenser lens 35 and The mirror 34 illuminates the standard marking member 32. The pore-marked image on the illuminated standard marking member 32 is back-projected onto the grating R by the projection optical system 12. Then, the light beam B transmitted through the grating R passes through the condenser optical system 21 and the reflection mirror 18 and enters the beam splitter 24. The light beam B incident on the beam splitter 24 is reflected in the beam splitter 24 and then incident on a photoinductor as a light amount sensor 37. The light amount sensor 37 outputs an electric signal to the control device 23 according to the intensity of the incident light beam B. The light amount sensor 37 is disposed on a surface to which the grating R is coupled. The control device 23 uses the signal output from the light quantity sensor 37 and the signal output from the laser interferometer 29 and the like to detect the position of the mark on the grating, and uses the detected deviation of the position of the mark and the design position to perform calculations for setting. Processing (least square method) to calculate the correction parameters such as the rotation correction amount of the grating R, the X X offset correction amount, and the X 光栅 magnification deviation amount. then. Based on the calculated correction amount, the control device 23 judges the position of the grating R through the grating stage driving system 25 and adjusts the imaging characteristics of the projection optical system. This paper size is applicable to China National Standard (CNS) A4 specifications (210 X 297 public hair) ------- 丨 · --installation ----- 丨 丨 丨 order --- 1 (Please read first Note on the back, please fill out this page again) 526541 8845pif.doc / 006 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (β) Moreover, the control device 23 can control the above-mentioned projection optical system 12 in an instant. The mounting surface moving part 22, the cover moving part, the grating stage driving system 25, the stage driving device 27; the position of the substrate stage 14 is detected; and the substrate ρ is moved two-dimensionally through the substrate stage 14, so that The substrate P is exposed to form a set pattern obtained by bonding the R pattern of the grating. In addition, the control device 23 is provided with a memory device 33 that stores various exposure data (prescriptions) such as sequence parameters, or correction parameters. Next, a process (pre-exposure process) performed before the process process is described. This preliminary exposure process can generally be divided into a pattern exposure process in which a gate pattern to be exposed is exposed on the substrate p in a process process, and a mark exposure process in which a mark MK is exposed on the substrate p on which the gate pattern has been exposed. In addition, as shown in FIG. 10, in the first layer of the substrate p, the gate layer (gate pattern) synthesized by the patterns A to D is a pattern formed by combining the screens. As shown in FIG. 12, each of the patterns a to D has a plurality of scanning line patterns (unit patterns, scanning pattern 38 along the scanning line pattern, and arranged at a fixed pitch LX (for example, a distance of 100 / zm)). Each gate electrode pattern (unit pattern) is the same gate pattern arranged at a fixed pitch LY in the Y direction. Usually, the dividing line of the joining pattern A to D is set to cross the scanning line pattern. In addition, the gate pattern is After development on the exposed substrate; after development on P, the photoresist with the above gate pattern will remain on the substrate, that is, a positive pattern is formed in the grating R. On the other hand, Figure 2A is shown for testing exposure Grating RT 〇16 (Please read the precautions on the back before filling this page)

本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 526541 8845pif.doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（丨屮） 如第2A圖所示，在光柵RT之中央附近形成作爲第 一標記之標記MK。此標記MK不同於在製程處理中形成 於基板P上之上述閘極圖案或其他圖案（源極•汲極圖案）。 如第2B圖所示，各個標記MK是由X標記XM與Y標記 YM所構成。X標記XM往Y方向延伸，用於量測X方向 位置。γ標記YM往X方向延伸，用於量測Y方向位置。 X標記XM之排列間距PX是設定成閘極電極圖案39 之排列間距LX的l/n(n爲自然數），在此PX二LX(亦即η =1)。Υ標記YM之排列間距ΡΥ是設定成掃瞄線圖案38 之排列間距LY的l/m(m爲自然數），在此PY=LY(亦即 1)。而且，此種標記MK在已經曝光之基板P上顯影 後，可以從基板P上移除具有該標記MK形狀之光阻，亦 即在光柵R中形成負片圖案。 於是，在最初圖案曝光製程中，使用具有閘極圖案之 光柵R，以於基板P上之第一層中曝光出閘極圖案。此時， 如第3圖所示，一邊更換各自具有圖案A〜D之4片光柵， 一邊以往Y方向延伸之分割線DLY以及往X方向延伸之 分割線DLX依序接合曝光出之圖案A〜D，而於基板P上 畫面合倂出窗格圖案。 而且，使用各自具有圖案A〜D之複數個光柵構成窗 格圖案時，也可以利用閘極圖案或源極•汲極圖案以一定 間距重複配置之形狀特性，調整可變場光圏20，以一片光 柵上的照明區域作爲依序變更之每個圖案。在此情況下， 可以減少光柵的片數，同時降低光柵交換時間，進而提昇 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公餐） 丨丨 — i 丨 — — 丨丨 I —·丨 ί 丨丨 I I ;π· — — — — — — — · (請先閱讀背面之注意事項再填寫本頁) 526541 8845pif.doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（/> ) 生產效率。 接著，於光柵承載台13設置測試曝光用光柵RT，依 序移動基板承載台14，並沿著基板P之中心以及分割線 DLY、DLX每次四個標記MK曝光複數次（第3圖爲9次）。 使用此測試曝光用光柵RT曝光出標記MK時，較佳是可 對基板P進行對準，並且可在閘極圖案曝光後連續的實施。 因此，就可以防止測試曝光結果包含有伴隨基板對準所產 生之誤差、接合準確度以外之誤差因素。 在此標記曝光製程中，標記MK係於每一次的曝光中 分別曝光在跨過分割線DLY(及/或DLX)之兩個圖案中。 亦即，利用一次的照射可以使標記MK同時曝光在基板上 相鄰接合兩個圖案上。而且，各個標記MK可對應第4A 圖所示之在圖案曝光製程中形成之閘極圖案。如第4B圖 所示，X標記XM與閘極圖案中閘極電極圖案39之X方 向的中心位置重疊，Y標記YM與閘極圖案中掃描線圖案 38之Y方向的中心位置重疊。 而且，在光柵R中，由於標記MK是配置在光柵中央 附近，亦即投影光學系統12之光軸附近，因此可以縮小 起因於通過投影光學系統12投影時之倍率或旋轉(Rotation) 所造成光柵成分之誤差。 然後，經過預備曝光製程在基板P上曝光出閘極圖案 以及標記MK後，對基板P施行顯影處理。在此，由於閘 極圖案爲正片圖案，藉由透過光柵R上閘極圖案以外區域 之光束B，如第4B圖所示，使得基板P上之光阻對應閘 18 本紙張尺度適用中國國家標準（CNS)A‘4規格（210 X 297公釐） » ϋ 1 ·1 ϋ ϋ 1 VI ϋ * ^1 ϋ ϋ ϋ n n i 一。r I n n ϋ n n ϋ I . (請先閱讀背面之注意事項再填寫本頁) 526541 8845pif.d〇c/006 A/ B7 五、發明說明（A) 極圖案以外之區域40成爲曝光區域，而對應閘極圖案之 區域（圖案38、39)成爲未曝光區域。此外，由於標記mk 爲負片圖案，如第4B圖所示，標記MK是曝光形成於作 爲未曝光區域之圖案38、39上。因此，即使對預備曝光 製程後之基板P實施顯影處理，也可以在閘極圖案內形成 標記MK(但是，在第4B圖中，從閘極圖案突出之X標記 XM之兩端是經過顯影處理而移除）。而且，如果能夠進行 潛像量測的話’就不需要使基板P顯影，而能夠直接進行 預備曝光製程後之下述量測步驟。 在預備曝光製程之後，轉移至基板P上之閘極圖案與 標記MK之相對位置關係可使用例如重疊測定器以測量 之。具體而言，如第5圖所示，例如可在圖案A、B側之 雙方各自測量出隔著分割線DLY在X方向接合之閘極圖 案與標記MK的相對位置關係。 如第5圖所不，在一個窗格(Window)中裝入圖案A、 B兩者以檢測邊緣(Edge)之情況下，閘極電極圖案39之排 '列間距LX(如第12圖所示），由於畫素間距爲300 /zm程 度、RGB分割爲100// m程度，因此必須迫使測定器中的 對物透鏡之檢測倍率大幅下降。然而，檢測倍率降低，也 會使檢測分解能力降低，結果會造成檢測準確度降低。因 此，在本實施例中，藉由測定圖案A、B之每個閘極圖案 與標記MK之相對位置關係，可以充分的檢測出全部數十 //m程度區域，在提高對物透鏡檢測倍率之狀態下，可以 進行一個窗格內之邊緣檢測。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公f ) -----I---.——-#-裝 (請先閱讀背面之注意事項再填寫本頁) 訂--- 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 526541 8845pif.doc/006 A7 B7 五、發明說明（q) 以下，接著說明相對位置量測。 舉例來說，在第5圖中，左側之照射區域（圖案A)中 閘極圖案與標記MK之重疊偏差量’在X方向中閘極電極 圖案39與X標記XM之重疊偏差量爲OVLx，在Y方向 中掃描線圖案38與Y標記YM之重疊偏差量爲OVLy。 同樣的，右側之照射區域（圖案B)中閘極圖案與標記MK 之重疊偏差量，在X方向中閘極電極圖案39與X標記XM 之重疊偏差量爲〇VRx，在Y方向中掃描線圖案38與Y 標記YM之重疊偏差量爲OVRy。 在此，標記MK是形成於一片光柵上，由於可以預先 量測標記位置與標記間的距離，且此標記MK之可靠度較 位於基板P上之閘極圖案高。因此，上述之重疊偏差量， 可利用標記MK之位置爲基準，而可以發現對應此標記MK 之閘極圖案的重疊偏差以及接合偏差（接合誤差）。 因此，圖案A與圖案B之間的接合準確度，可以使 用上述重疊偏差量，而以下式表示之。This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 526541 8845pif.doc / 006 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (丨 屮) As shown in Figure 2A As shown, a mark MK as a first mark is formed near the center of the grating RT. This mark MK is different from the above-mentioned gate pattern or other patterns (source-drain patterns) formed on the substrate P in a process process. As shown in Fig. 2B, each mark MK is composed of an X mark XM and a Y mark YM. The X mark XM extends in the Y direction for measuring the position in the X direction. The γ mark YM extends in the X direction for measuring the position in the Y direction. The arrangement pitch PX of the X mark XM is set to be 1 / n (n is a natural number) of the arrangement pitch LX of the gate electrode pattern 39, where PX = LX (that is, η = 1). The arrangement pitch P of the Y mark YM is set to 1 / m (m is a natural number) of the arrangement pitch LY of the scanning line pattern 38, where PY = LY (that is, 1). Moreover, after developing such a mark MK on the exposed substrate P, a photoresist having the shape of the mark MK can be removed from the substrate P, that is, a negative pattern is formed in the grating R. Therefore, in the initial pattern exposure process, a grating R having a gate pattern is used to expose the gate pattern in the first layer on the substrate P. At this time, as shown in FIG. 3, while exchanging four gratings each having a pattern A to D, the conventionally divided division line DLY extending in the Y direction and the division line DLX extending in the X direction are sequentially joined to the exposed pattern A ~ D, and a window pattern is combined on the screen on the substrate P. In addition, when a plurality of gratings each having a pattern A to D are used to form a pane pattern, a gate pattern or a source-drain pattern can also be used to adjust the shape characteristics of repeated arrangement at a certain pitch to adjust the variable field light beam 20 to The illuminated area on a piece of grating is used as each pattern that changes sequentially. In this case, the number of gratings can be reduced, and the grating exchange time can be reduced at the same time, thereby improving the paper size. Applicable to the Chinese National Standard (CNS) A4 specification (21〇X 297 meals) 丨 丨 — i 丨 — — 丨 丨 I — · 丨 ί 丨 丨 II; π · — — — — — — — (Please read the notes on the back before filling out this page) 526541 8845pif.doc / 006 A7 B7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Description of the invention (/ >) Production efficiency. Next, a grating exposure RT for test exposure is set on the grating stage 13, and the substrate stage 14 is sequentially moved, and exposed along the center of the substrate P and the dividing line DLY, DLX four times each time with four marks MK (Figure 3 is 9). Times). When the mark MK is exposed by using this test exposure grating RT, it is preferable that the substrate P can be aligned and can be continuously implemented after the gate pattern is exposed. Therefore, it is possible to prevent the test exposure result from including errors caused by the alignment of the substrate and other factors than the accuracy of the bonding. In this marking exposure process, the marking MK is exposed in two patterns across the dividing line DLY (and / or DLX) in each exposure. That is, the mark MK can be simultaneously exposed on the substrate by bonding two patterns adjacent to each other with a single irradiation. Moreover, each mark MK may correspond to the gate pattern formed in the pattern exposure process shown in FIG. 4A. As shown in Fig. 4B, the X mark XM overlaps the center position in the X direction of the gate electrode pattern 39 in the gate pattern, and the Y mark YM overlaps the center position in the Y direction of the scan line pattern 38 in the gate pattern. Moreover, in the grating R, since the mark MK is arranged near the center of the grating, that is, near the optical axis of the projection optical system 12, it is possible to reduce the grating caused by the magnification or rotation during the projection by the projection optical system 12. Compositional error. Then, the gate pattern and the mark MK are exposed on the substrate P through a preliminary exposure process, and then the substrate P is subjected to a development process. Here, because the gate pattern is a positive pattern, the light resistance B on the substrate P corresponds to the gate 18 by transmitting the light beam B outside the gate pattern on the grating R, as shown in FIG. 4B. (CNS) A'4 size (210 X 297 mm) »ϋ 1 · 1 ϋ ϋ 1 VI ϋ * ^ 1 ϋ ϋ ϋ nni one. r I nn ϋ nn ϋ I. (Please read the notes on the back before filling in this page) 526541 8845pif.d〇c / 006 A / B7 V. Description of the Invention (A) The area 40 other than the pole pattern becomes the exposure area, and The areas (patterns 38, 39) corresponding to the gate patterns become unexposed areas. In addition, since the mark mk is a negative pattern, as shown in FIG. 4B, the mark MK is formed on the patterns 38 and 39 as unexposed areas by exposure. Therefore, even if development processing is performed on the substrate P after the preliminary exposure process, marks MK can be formed in the gate pattern (however, both ends of the X mark XM protruding from the gate pattern are subjected to development processing in FIG. 4B. And removed). Furthermore, if latent image measurement is possible, it is not necessary to develop the substrate P, and the following measurement steps after the preliminary exposure process can be directly performed. After the preliminary exposure process, the relative positional relationship between the gate pattern and the mark MK transferred to the substrate P can be measured using, for example, an overlay tester. Specifically, as shown in FIG. 5, for example, the relative positional relationship between the gate pattern and the mark MK which are joined in the X direction via the dividing line DLY can be measured on both sides of the pattern A and B, respectively. As shown in FIG. 5, in the case where two patterns A and B are installed in one window to detect edges, the row-to-column distance LX of the gate electrode patterns 39 (as shown in FIG. 12) (Shown), because the pixel pitch is about 300 / zm and the RGB division is about 100 // m, it is necessary to force the detection magnification of the objective lens in the measuring device to be greatly reduced. However, lowering the detection magnification will also reduce the detection resolution, and as a result, the detection accuracy will decrease. Therefore, in this embodiment, by measuring the relative positional relationship between each gate pattern of the patterns A and B and the mark MK, it is possible to adequately detect all the regions of several tens / m, and improve the detection magnification of the objective lens. In this state, you can perform edge detection in a pane. This paper size applies to China National Standard (CNS) A4 specification (210 X 297 male f) ----- I ---.----- #-pack (Please read the precautions on the back before filling this page) Order- -Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 526541 8845pif.doc / 006 A7 B7 V. Description of Invention (q) Below, the relative position measurement will be explained. For example, in FIG. 5, the overlapping deviation amount of the gate pattern and the mark MK in the irradiation area (pattern A) on the left side is the overlap deviation amount of the gate electrode pattern 39 and the X mark XM in the X direction is OVLx, The amount of overlap between the scanning line pattern 38 and the Y mark YM in the Y direction is OVLy. Similarly, the overlap deviation between the gate pattern and the mark MK in the irradiation area (pattern B) on the right side, and the overlap deviation between the gate electrode pattern 39 and the X mark XM in the X direction is 0 VRx, and the scan line is in the Y direction. The amount of overlap between the pattern 38 and the Y mark YM is OVRy. Here, the mark MK is formed on a grating, because the distance between the mark position and the mark can be measured in advance, and the reliability of the mark MK is higher than the gate pattern on the substrate P. Therefore, the above-mentioned overlap deviation amount can use the position of the mark MK as a reference, and the overlap deviation and the joining deviation (joint error) of the gate pattern corresponding to the mark MK can be found. Therefore, the accuracy of the joint between the pattern A and the pattern B can be expressed by the following formula using the above-mentioned overlap deviation amount.

X 方向：| OVLx- OVRx I Y 方向：I OVLy—OVRy I (1) 因此，習知很難求出X方向及Y方向兩者之接合準 確度之問題，在此可以利用另一種容易的方法而容易的求 出。 此外，除了上述圖案A、B間之接合準確度外，舉例 來說，求出在Y方向之圖案A、C間之接合準確度（未圖 示），以上述相同之順序在圖案A、C雙方各自測量出隔著 20 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公爱） --------i---裝---I----訂--- (請先閱讀背面之注意事項再填寫本頁) 526541 8845pif.doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（β) 分割線DLX在Υ方向接合之閘極圖案與標記ΜΚ的相對 位置關係。因此，在上側之照射區域（圖案Α)中求出閘極 圖案與標記ΜΚ在X方向之重疊偏差量〇VUx與在Υ方 向之重疊偏差量爲OVUy，同時在下側之照射區域（圖案C) 中求出閘極圖案與標記MK在X方向之重疊偏差量爲 OVDx與Y方向之重疊偏差量爲OVDy。以式（1)爲基準之 下式，求出圖案A與圖案C之間的接合準確度。X direction: | OVLx- OVRx IY direction: I OVLy—OVRy I (1) Therefore, it is difficult to know the accuracy of the joint between the X direction and the Y direction. Here, another easy method can be used. Easy to find. In addition to the accuracy of joining between the patterns A and B described above, for example, find the accuracy of joining between the patterns A and C in the Y direction (not shown). The two sides measured that the paper size of 20 papers is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public love) -------- i --- install --- I ---- order-- -(Please read the precautions on the back before filling this page) 526541 8845pif.doc / 006 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (β) Gate pattern of the dividing line DLX joining in the Υ direction Relative positional relationship with marker MG. Therefore, in the upper irradiation area (pattern A), the amount of overlap deviation between the gate pattern and the mark MG in the X direction, OVUx and the overlap deviation in the Υ direction, is OVOy, and at the same time, the lower irradiation area (pattern C) It is found that the overlap deviation amount of the gate pattern and the mark MK in the X direction is OVDx and the overlap deviation amount of the Y direction is OVDy. Using the following equation based on equation (1), the accuracy of joining between the pattern A and the pattern C was obtained.

X 方向：| OVUx- OVDx I Y 方向：I OVUy-OVDy | 而且，利用與上述相同之順序對其他區域各自量測閘 極圖案與標記MK的重疊偏差量。於是，如第6圖所示， 舉例來說，曝光圖案A時之補正量，亦即，使用具有圖案 A之光概R在曝光時之補正參數(偏移X、γ、旋轉、倍率 等）是在複數之標記中，使用最小二乘法經過統計演算處 理沿著圖案A接合邊所形成之複數個標記與閘極圖案的重 暨偏差量與設計値而求得的。同樣的，圖案B〜D在曝光 時之補正參數是使用沿著各個圖案接合邊所形成之複數個 標記與閘極圖案的重疊偏差量而求得。 上述之補正參數能對包含光柵R之圖案誤差與投影光 學系統之失真、以及使用實際於基板P上曝光之閘極圖案 所算出之誤差進行補正。因此，在量測步驟中所求得之各 個圖案的每個補正參數可記錄於記憶裝置33中。 在預備曝光製程以及量測製程結束後，進行曝光製 程。在預備曝光製程所使用之例如具有圖案A之光柵，以 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I I I--I I I Γ I · l I I I I I I ^ * — — — — — — — — (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 526541 8845pif.doc/006 A7 ----- B7 五、發明說明（q) 未圖示之光學搬送系統搬送至光柵承載台13上，然後控 制裝置23先以光柵對準系統26a、26b量測形成於光柵r 上之照明區域外的光柵標記（未圖示），並透過光柵承載台 驅動系統進行光柵R本身之對準。 接著，控制裝置23利用自動聚焦系統30a、30b，使 基準標記構件32與基板P在光學投影系統12之光軸方向 中位於與光柵R相對應位置。 接著’控制裝置23在設定製程中，從記憶裝置33讀 取預先求得之光柵R的旋轉補正量、XY位移補正量、XY 倍率偏差量，再根據此補正參數透過光柵承載台13決定 光柵R之位置，同時調整投影光學系統12之成像特性。 因此，如第6圖所示，相對於理想格子κ中所產生之偏差， 可補正光柵R之圖案A。 對應光柵R而進行對準之後，可在曝光出圖案A之 基板P上的區域決定出曝光照射區域，然後透過承載台驅 動裝置27驅動基板承載台14,並利用光束B照明光柵R， 以於基板P之第一層上曝光出作爲部分閘極圖案之圖案 A。之後，進行與圖案A相同之程序對應各自具有圖案B〜D 之光柵，使用從記憶裝置33讀取之補正參數對準，同時 經過決定基板P上之位置後曝光出各圖案B〜D，以於基板 P上接合圖案A〜D並畫面合倂成畫板圖案。 利用此畫面合倂，每一個圖案A〜D全都正好與基板P 上第零層所形成之標記MK高準確度之重疊，藉由進行高 準確度之重疊各圖案A〜D之每一個與第零層，結果可以 22 I SIM Μ· a·*· Μ·· ΜΒΜ · (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 526541 8 8 4 5p i f . doc /0 0 6 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（αο) 提昇圖案Α〜D之接合準確度。 然後，基板P上第二層以後所曝光出之圖案（源極· 汲極圖案等），在交換具有該圖案之光柵時，使用第一層 之閘極圖案在曝光時所形成之基板對準標記，以進行此光 柵之對準以及投影光學系統12之成像特性調整，而高準 確度的重疊於閘極圖案上。此外，爲了使第二層以後高準 確度的重疊於第一層上，對於使用基板對準標記之其他方 法而Η，可對第二層以後之曝光圖案實施上述測試曝光， 而可以|木用預先接合g亥圖案而求出曝光時之補正參數的方 法。 如上述之本發明實施例之曝光方法及曝光裝置中，由 於在預備曝光製程中，先以程序在基板P上曝光出轉移之 閘極圖案與標記MK，再根據此重疊偏差量預先求出在曝 光出閘極圖案時之補正參數，因此在曝光出基板P上存在 於第零層並重疊在第零層之閘極圖案的情況下，可以進行 同樣準確度之曝光，結果在基板P上之第零層上接合複數 個圖案時，也能夠出充分的增進接合準確度。 而且，在本實施例中，係以二維標記作爲標記MK， 藉由曝光出接合圖案之每個標記MK，可以檢測出在X方 向以及Y方向雙方之接合誤差。因此，在預備曝光製程中 不只是求出圖案之每個補正參數，還可以求出接合圖案間 之相對接合準確度。因此，在本實施例中，使用補正參數 不但追求各個圖案A〜D之每個對準精確度，結果還可以 提升接合準確度，舉例來說以圖案A爲基準，使用對應圖 23 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -ϋ ϋ ϋ 1 ϋ ϋ ϋ ^1 .n n ϋ · «I ϋ 1 I ϋ I 1 一 δ, ϋ ϋ 1 ϋ ϋ ϋ ϋ I · (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 526541 8845pif.doc/006 A7 B7 五、發明說明（Μ) 案A之相對接合準確度補正圖案B〜D之補正參數以進行 接合。 但是，本實施例中’由於閘極圖案爲正片圖案’標記 MK爲負片圖案，同時以掃瞄線圖案38、閘極電極圖案39 之排列間距對應標記MK之排列間距重疊曝光’因此量測 重疊偏差量時之範圍可以縮小至數十之程度。於是’ 在測定器中提高測倍率之情況下，就可以進行邊緣檢測’ 且不會影響起因於對物透鏡倍率所造成量測準確度之惡 化，而能夠進行高準確度之檢測’同時可以使用習知所使 用之重疊測定器等而不需要另外供應新的測定器’可以有 助於高準確度與低成本化。此外，在本實施例中，由於光 柵RT上之標記MK是配置在光柵中央附近，以使得起因 於投影時之倍率或旋轉所造成之光柵成分之誤差達到最 小，而可以實現較高準確度之接合。 而且，在上述實施例中作爲第一標記之標記MK是形 成在與具有閘極圖案之光柵R不同之光柵RT上’當然此 並非用以限定本發明，舉例來說也可以直接在具有閘極圖 案之光柵R上形成第一標記。在此情況下，第一標記是配 置在從圖案A離開一段距離之角落部，利用能夠移動之光 柵承載台13使第1標記位於光學投影系統12之光軸附近 之狀態下進行測試曝光，以使得起因於投影時之倍率或旋 轉所造成之光柵成分之誤差達到最小。 此外，上述實施例中，閘極圖案是由正片圖案構成’ 作爲第一標記之標記MK是由負片圖案所構成，相反的當 24 ---------：---*裝--------訂 (請先閱讀背面之注咅？事項再填寫本頁) 禮· 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） 526541 8 8 4 5p i f . doc /0 0 6 A7 B7 五、發明說明（>2) (請先閱讀背面之注意事項再填寫本頁) 然閘極圖案也可以是由負片圖案所構成，作爲第一標記之 標記MK也可以是由正片圖案所構成。而且，第一標記之 圖案並不限於上述之形狀，其也可以是如第7圖所示，能 夠同時檢測X方向與Y方向之邊緣呈現L字形狀之標記 MK。 另外，在上述實施例中，預備曝光製程在一次曝光中 可在基板P上曝光形成4個標記MK，當然也可以如第8 圖所示，例如控制可變場光圈20之驅動，使其橫跨接合 圖案，而個別曝光形成2個標記MK。而且，在上述實施 例中，接合之圖案A〜D是以具有同一閘極圖案之圖案作 說明，當然本發明並不限於此，也能夠適用於接合相互不 同之圖案的情況。 此外，本實施例之基板並不只限於液晶顯示元件用之 玻璃板，也可以適用於半導體元件用之半導體晶圓、薄膜 磁頭用之陶瓷晶圓、或用於曝光裝置之罩幕或光柵之原板 (合成石英、矽晶圓）。 經濟部智慧財產局員工消費合作社印製 就曝光裝置9而言，可以使用當光柵R與基板P處於 靜止狀態下曝光出光柵R之圖案，而依序步進移動基板P 之步進重複（Step · And · Repeat)方式之曝光裝置（步進機 Stepper)或者也可以適用其他藉由同時移動光柵R與基板 P以掃瞄曝光光柵R圖案之步進掃瞄（Step · And · Scan)方 式之掃瞄型曝光裝置（掃瞄式步進機，Scanning Stepper; USP5,473,41〇) 〇 就曝光裝置9之種類而言，並不限於在基板Ρ上曝光 25 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 526541 8845pif.doc/006 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（2p 出液晶顯示元件圖案之液晶顯示元件製造用之曝光裝置， 當然也可以廣泛的適用於在晶圓上曝光出半導體元件圖案 之半導體元件製造用之曝光裝置、或用於製造薄膜磁頭、 攝像元件（CCD)、光柵等之曝光裝置。 而且，就光束B之光源而言，不只是可以使用從超高 壓水銀燈產生之射線（g線（436nm)、h線（404.7nm)、i線 (365nm)、氟化氪（KrF)準分子雷射線（Excimer Laser)、 (436nm)、氟化氬（ArF)準分子雷射線（436nm)、氟（F2)準分 子雷射線(436nm))，也可以使用X射線或電子射線等帶電 粒子線。舉例來說，在使用電子射線之情況下，可以利用 熱電子放電型之六棚化鑭（LaB6)、钽（Ta)作爲電子槍。另 外，在使用電子射線之情況下，可以使用光柵R之圖案， 當然也可以使用光柵R直接在玻璃基板上形成之圖案。另 外，也可以使用YAG雷射或半導體雷射等高週波射線等。 投影光學系統12之倍率並不限於等倍率系統，當然 也可以是縮小系統或放大系統之其中之一。就光學投影系 統而言，在使用準分子雷射線等遠紫外線的情況下，可以 使用作爲硝材之石英或瑩石等之遠紫外線穿透材料；在使 用氟雷射線或X射線之情況下，可以使用反射折射系統或 折射系統之光學系統（光柵R也可以使用反射型形式之光 柵）；或者在使用電子射線之情況下，可以使用由作爲光 學系統之電子透鏡及偏向器所組成之電子光學系統。而 且，電子射線通過的光學路徑不用說當然是處於真空狀 態。此外，當然也可適用於不使用投影光學系統12，而密 26 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ---------：——^裝--------訂 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 526541 8845pif. doc/ 006 pj B7 五、發明說明（yf) 接光柵R與基板P以曝光出光柵R之圖案的近接(Proximity) 曝光裝置。另外，在上述實施例中，投影光學系統係以單 一透鏡表示，當然也可以配置複數個投影透鏡使投影區域 相互重複，亦即複數透鏡方式之投影光學系統。 在基板承載台14或光柵承載台13中是使用線性馬達 (Linear Motor)(請參照 USP5,623,853 或 USP5,528，118)之 情況，當然也可以使用利用空氣軸承（Air Bearing)之空氣 浮上型以及使用洛倫兹力（Lorentz Force)或電抗(Reactance) 力之磁力浮上型。而且，各承載台13、14可以是沿著導 引軌之形式，或者也可以是不設置導引軌之導引透鏡形式 (Guide Lens Type) 〇 就各承載台13、14之驅動機構而言，可以使用藉由 使在二維配置磁石之磁石單元(Unit)(永久磁石）與在二維配 置線圏（Coil)之電機子單元相對之電磁力驅動各承載台 13、14之平面馬達。在此情況下，磁石單元與電機子單元 之任一方接觸承載台13、14，而磁石單元與電機子單元之 另一方設置於承載台13、14之移動面側(基座）。 藉由基板承載台14之移動而產生之反作用力並沒有 傳入光學投影系統12，如日本專利特開平8-166475號案 (USP5,528，118)所揭露，其係使用圖框(Frame)構件而機械 的釋放至床（基底）中。因此本發明可以適用於具備有此種 結構之曝光裝置。 藉由光柵承載台13之移動而產生之反作用力並沒有 傳入光學投影系統12，如日本專利特開平8-330224號案 27 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） I.---裝--------訂---- (請先閱讀背面之注意事項再填寫本頁) 526541 8845pif.doc/006 A7 經濟部智慧財產局員工消費合作社印製 B7 五、發明說明（《） (US S/N 08/416,558)所揭露，其係使用圖框(Frame)構件而 機械式的釋放至床（基底）中。因此本發明可以適用於具備 有此種結構之曝光裝置。 如上述，本實施例之作爲基板處理裝置之曝光裝置9 是由本發明之申請專利範圍中列舉可確保設定之機械準確 度、電性準確度、光學準確度等，且包括各個構成要素之 各種次系統（Sub system)所組裝製造的。爲了確保上述之 各種準確度，在組裝前後，需進行使各光學系統達成光學 準確度之調整、使各機械系統達成機械準確度之調整、使 各電性系統達成電性準確度之調整。將各種次系統組裝成 曝光裝置之步驟包括各種次系統彼此間之機械的連接、電 性電路之導線連接、氣壓電路之導管連接等。在將各種次 系統組裝成曝光裝置之前，不用說也包括各次系統之個別 組裝步驟。在將各種次系統組裝成曝光裝置之後，需進行 統合調整，以確保整個曝光裝置之各種準確度。此外，曝 光裝置之製造較佳是在可管理溫度與淸潔度之淸潔室中進 行。 如第9圖所示，液晶顯示元件或半導體元件包括進行 液晶顯不兀件等之機能•性能設計之步驟201、根據此設 計步驟製作光柵R(罩幕）之步驟202、製作由石英等組成 之玻璃板P或由矽材料組成之晶圓之步驟203、利用上述 貝方也例之曝光裝置9於玻璃板P(或晶圓）上曝光出光柵R 圖案之步驟204、組裝液晶顯示元件等之步驟2〇5(在晶圓 之丨、β況下包括切割（Dicing)製程、焊接（Bonding)製程、封 28 i k -- -, — — — — — — — — Γ — I ·11111--— — — — — — — c請先間讀背面之注意事項再填寫本頁) (210x297 公釐） 526541 8845pif·doc/〇〇6 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明說明（％) 裝(Package)製程等）以及檢查步驟206等。 發明之效果 如上述之說明，關於本發明申請專利範圍第1項之曝 光方法中，在基板上曝光出接合圖案與第一標記後，根據 根據第一標記與圖案之間的相對位置關係，依序設定曝光 接合圖案時之補正量^ 因此，在本曝光方法中，即使在基板上接合複數個圖 案時’也可以達到所謂充分的增進接合準確度之效果。 關於本發明申請專利範圍第2項之曝光方法，其中包 括依序於每個接合圖案上曝光出第一標記。 因此，在本曝光方法中，由於不只有求出每個圖案之 補正參數，還可以求出接合圖案間之相對接合準確度，因 此’也能夠達到所謂對於做爲基準之圖案使用相對的接合 準確度以補正接合其他圖案之補正參數。 關於本發明申請專利範圍第3項之曝光方法，其中包 ί 舌使第一標記對應單位圖案之排列間距而排列。 因此，在本曝光方法中，可以使量測第一標記與單位 圖案之重疊偏差量時之範圍縮小至數十//m之程度，而在 測定器中提高檢測倍率之情況下可以進行邊緣檢測，且不 會影響起因於對物透鏡倍率所造成量測準確度之惡化，而 可以達到所謂能夠進行高準確度檢測之效果。 關於本發明申請專利範圍第4項之曝光方法，其中包 ί 舌依序重疊曝光第一標記與圖案。 因此，在本曝光方法中，可以使量測第一標記與單位 29 本紙張尺度適用中國國家標準（CNSM4規格（21G X 297公爱） ~I _--. ---------i---裝--------訂---— — — — — — (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 526541 8845pif.doc/006 A7 B7 五、發明說明（〆]) 圖案之重疊偏差量時之範圍縮小至數十//m之程度，而在 測定器中提高檢測倍率之情況下可以進行邊緣檢測，且不 會影響起因於對物透鏡倍率所造成量測準確度之惡化，而 能夠達到所謂能夠進行高準確度檢測之效果。 關於本發明申請專利範圍第5項之曝光方法，其中圖 案爲負片圖案或正片圖案之其中一種，第一標記爲負片圖 案或正片圖案之其中另一種。 因此，在本曝光方法中，可以使量測第一標記與單位 圖案之重疊偏差量時之範圍縮小至數十//m之程度，而在 測定器中提高檢測倍率之情況下可以進行邊緣檢測，且不 會影響起因於對物透鏡倍率所造成量測準確度之惡化，而 能夠達到所謂能夠進行高準確度檢測之效果。 關於本發明申請專利範圍第6項之曝光方法，其中圖 案係依序形成於基板之第一層。 因此，在本曝光方法中，即使在基板上並未形成作爲 基準之圖案的情況下，也可以達到所謂充分的增進接合準 確度之效果。 關於本發明申請專利範圍第7項之曝光方法，其中第 一標記係形成於罩幕之中央圖案。 因此，在本曝光方法中，可以使得起因於投影時之倍 率或旋轉所造成之光柵成分之誤差達到最小，並達到所請 能夠以較高準確度接合之效果。 關於本發明申請專利範圍第8項之曝光方法，其中接 合圖案是由相同之圖案所構成。 30 ί---裝 i — · — — — 訂· — ί* — — — · (請先閱讀背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS)A4 規格（210 x 297公釐） 526541 8845pif.doc/006 A7 B7 五、發明說明（ 因此，在本曝光方法中，即使在基板上接合複數個圖 案時，也可以達到所謂充分的增進接合準確度之效果。 關於本發明申請專利範圍第9項之曝光裝置中，包括 可根據第一標記與圖案的相對位置關係，記憶曝光接合圖 案時之補正量，以及可根據記憶之補正量於基板上接合圖 案之裝置。 因此，在本曝光裝置中，即使在基板上接合複數個圖 案時，也可以達到所謂充分的增進接合準確度之效果。 - - -V -- --------Γ 丨»裝--------訂-------->^_w (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 3 本紙張尺度適用中國國家標準（CNSM4規格（21〇 X 297公髮）X direction: | OVUx- OVDx I Y direction: I OVUy-OVDy | Furthermore, the amount of overlap between the gate pattern and the mark MK is measured for each of the other areas in the same order as described above. Therefore, as shown in FIG. 6, for example, the correction amount when the pattern A is exposed, that is, the correction parameters (offset X, γ, rotation, magnification, etc.) at the time of exposure using the light profile R having the pattern A are used. It is obtained by using the least squares method to calculate the weights, deviations, and designs of the plurality of marks and gate patterns formed by joining the edges of the pattern A through statistical calculation processing among the plurality of marks. Similarly, the correction parameters of the patterns B to D during exposure are obtained by using the amount of overlap between the marks and the gate pattern formed along the bonding edges of the respective patterns. The above-mentioned correction parameters can correct the error including the pattern error of the grating R and the distortion of the projection optical system, and the error calculated using the gate pattern actually exposed on the substrate P. Therefore, each correction parameter of each pattern obtained in the measurement step can be recorded in the memory device 33. After the preliminary exposure process and the measurement process are completed, the exposure process is performed. For example, a grating with a pattern A used in the pre-exposure process applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) to this paper size II I--III Γ I · l IIIIII ^ * — — — — — — — — (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 526541 8845pif.doc / 006 A7 ----- B7 V. Description of Invention (q) Not shown The optical transfer system is transferred to the grating stage 13, and the control device 23 first measures the grating marks (not shown) outside the illumination area formed on the grating r with the grating alignment systems 26a and 26b, and passes through the grating stage The drive system performs the alignment of the grating R itself. Next, the control device 23 uses the autofocus systems 30a and 30b to position the reference mark member 32 and the substrate P at positions corresponding to the grating R in the optical axis direction of the optical projection system 12. Next, in the setting process, the control device 23 reads the rotation correction amount, XY displacement correction amount, and XY magnification deviation amount of the grating R obtained in advance from the memory device 33, and determines the grating R through the grating bearing table 13 according to this correction parameter. While adjusting the imaging characteristics of the projection optical system 12. Therefore, as shown in FIG. 6, the pattern A of the grating R can be corrected with respect to the deviation generated in the ideal lattice κ. After the alignment is performed corresponding to the grating R, the exposure irradiation area can be determined on the area on the substrate P on which the pattern A is exposed, and then the substrate supporting table 14 is driven by the supporting table driving device 27, and the grating R is illuminated with the light beam B so that A pattern A as a partial gate pattern is exposed on the first layer of the substrate P. After that, the same procedure as the pattern A is performed to correspond to each of the gratings having the patterns B to D, and the correction parameters read from the memory device 33 are used to align, and at the same time, the patterns B to D are exposed after determining the position on the substrate P, so that Patterns A to D are bonded to the substrate P and the screens are combined to form a drawing board pattern. With the combination of this screen, each of the patterns A to D exactly overlaps with the high accuracy of the mark MK formed by the zeroth layer on the substrate P. By superimposing each of the patterns A to D with the high accuracy, Zero layer, the result can be 22 I SIM Μ · a · * · Μ ·· ＭＭＭ · (Please read the precautions on the back before filling this page) This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ) 526541 8 8 4 5p if. Doc / 0 0 6 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 5. Description of the invention (αο) Improve the joining accuracy of the patterns A ~ D. Then, for the patterns (source and drain patterns, etc.) exposed after the second layer on the substrate P, when the grating having the pattern is exchanged, the substrate formed during the exposure using the gate pattern of the first layer is aligned Mark to perform alignment of the grating and adjustment of imaging characteristics of the projection optical system 12, and superimpose on the gate pattern with high accuracy. In addition, in order to superimpose the second layer on the first layer with high accuracy afterwards, for other methods using substrate alignment marks, the above-mentioned test exposure can be performed on the exposure pattern after the second layer, and it can be used for wood A method in which g-h pattern is bonded in advance to obtain correction parameters at the time of exposure. In the exposure method and the exposure device of the embodiment of the present invention as described above, in the preliminary exposure process, the gate pattern and the mark MK transferred on the substrate P are exposed by a program first, and then the The correction parameters when the gate pattern is exposed. Therefore, when the gate pattern that exists on the substrate P in the zeroth layer and overlaps with the zeroth layer is exposed, the exposure with the same accuracy can be performed. When a plurality of patterns are bonded on the zeroth layer, the bonding accuracy can be sufficiently improved. Moreover, in this embodiment, a two-dimensional mark is used as the mark MK, and by exposing each mark MK of the joining pattern, a joining error in both the X direction and the Y direction can be detected. Therefore, in the preliminary exposure process, not only the correction parameters of each pattern, but also the relative joining accuracy between the joining patterns can be obtained. Therefore, in this embodiment, the use of correction parameters not only pursues the accuracy of each alignment of each pattern A to D, but also improves the accuracy of the joint. For example, using pattern A as a reference, using the paper size corresponding to Figure 23 Applicable to China National Standard (CNS) A4 (210 X 297 mm)-ϋ ϋ ϋ 1 ϋ ϋ ϋ ^ 1 .nn ϋ · «I I 1 I ϋ I 1 -δ, ϋ ϋ 1 ϋ ϋ ϋ ϋ I · (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 526541 8845pif.doc / 006 A7 B7 V. Description of the Invention (M) Correction Patterns for Relative Joining Accuracy of Case A B ~ D Correct the parameters for joining. However, in the present embodiment, "the gate pattern is a positive pattern", the mark MK is a negative pattern, and the arrangement pitch of the scanning line pattern 38 and the gate electrode pattern 39 corresponds to the arrangement pitch of the mark MK. Therefore, the measurement overlaps. The range of the amount of deviation can be reduced to a few tens. Therefore, 'the edge detection can be performed when the measurement magnification is increased in the measuring device' without affecting the deterioration of the measurement accuracy caused by the objective lens magnification, and the high accuracy detection can be performed. It can also be used It is known that the overlap measuring device and the like used without the need to supply a new measuring device can contribute to high accuracy and low cost. In addition, in this embodiment, the mark MK on the grating RT is arranged near the center of the grating, so that the error of the grating component caused by the magnification or rotation during projection is minimized, and a higher accuracy can be achieved. Join. Moreover, in the above-mentioned embodiment, the mark MK as the first mark is formed on a grating RT different from the grating R having a gate pattern. Of course, this is not intended to limit the present invention. A first mark is formed on the patterned grating R. In this case, the first mark is placed at a corner away from the pattern A, and the first mark is located near the optical axis of the optical projection system 12 by using a movable grating stage 13 to perform a test exposure to Minimize the error of the raster component caused by the magnification or rotation during projection. In addition, in the above embodiment, the gate pattern is composed of a positive pattern. The mark MK as the first mark is composed of a negative pattern. Conversely, when 24 ---------: --- * 装- ------- Order (please read the note on the back? Matters before filling out this page) Etiquette · This paper size is applicable to China National Standard (CNS) A4 (21〇X 297 mm) 526541 8 8 4 5p if. doc / 0 0 6 A7 B7 V. Description of the invention (> 2) (Please read the notes on the back before filling in this page) However, the gate pattern can also be composed of a negative pattern as the first mark. MK may be composed of a positive pattern. Moreover, the pattern of the first mark is not limited to the above-mentioned shape, and it may also be a mark MK capable of simultaneously detecting that the edges in the X direction and the Y direction are L-shaped, as shown in FIG. 7. In addition, in the above embodiment, the pre-exposure process can expose four marks MK on the substrate P in one exposure. Of course, as shown in FIG. 8, for example, the drive of the variable field diaphragm 20 can be controlled to make it horizontal. A cross-bonding pattern is formed while individual exposures form 2 marks MK. Moreover, in the above-mentioned embodiment, the patterns A to D to be bonded are described with patterns having the same gate pattern. Of course, the present invention is not limited to this, and can also be applied to the case where different patterns are bonded. In addition, the substrate of this embodiment is not limited to a glass plate for a liquid crystal display element, but can also be applied to a semiconductor wafer for a semiconductor element, a ceramic wafer for a thin-film magnetic head, or an original plate for a mask or a grating of an exposure device. (Synthetic quartz, silicon wafer). Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. For the exposure device 9, the pattern of the grating R can be exposed when the grating R and the substrate P are stationary, and the steps of moving the substrate P in sequence are repeated (Step · And · Repeat) exposure device (Stepper) or other step scanning (Step · And · Scan) scanning by moving the grating R and the substrate P at the same time to scan the exposure grating R pattern Scanning exposure device (Scanning Stepper; USP5,473,41) As far as the type of exposure device 9 is concerned, it is not limited to exposing on the substrate P. 25 This paper standard applies Chinese national standards ( CNS) A4 specification (210 X 297 mm) 526541 8845pif.doc / 006 A7 B7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (2p exposure device for the manufacture of liquid crystal display elements with liquid crystal display element patterns, Of course, it can also be widely used in semiconductor device manufacturing exposure devices for exposing semiconductor device patterns on wafers, or for manufacturing thin-film magnetic heads, camera elements (CCD), and gratings. Moreover, as for the light source of the beam B, not only the rays (g-ray (436nm), h-ray (404.7nm), i-ray (365nm), ytterbium fluoride (KrF) ) Excimer Laser (Excimer Laser), (436nm), Argon Fluoride (ArF) Excimer Light Ray (436nm), Fluorine (F2) Excimer Light Ray (436nm)), X-rays or electron rays can also be used Charged particle beams. For example, in the case of using electron beams, you can use the six-lane lanthanum (LaB6) and tantalum (Ta) as the electron guns. In the case of using electron beams, you can use The pattern of the grating R can of course also be a pattern formed directly on a glass substrate by the grating R. In addition, high-frequency rays such as a YAG laser or a semiconductor laser can also be used. The magnification of the projection optical system 12 is not limited to a constant magnification system Of course, it can also be one of the reduction system or the enlargement system. As far as the optical projection system is concerned, when far-ultraviolet rays such as excimer thunder rays are used, it is possible to use quartz or fluorite as a nitrate material. Ultraviolet-transmitting materials; in the case of freon rays or X-rays, a reflective refraction system or an optical system of the refractive system can be used (the grating R can also use a reflective type grating); or in the case of using an electron beam, An electron optical system composed of an electron lens and a deflector as an optical system can be used. Moreover, it goes without saying that the optical path through which electron rays pass is in a vacuum state. In addition, of course, it can also be applied to a case where the projection optical system 12 is not used, and Secret 26 This paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm) ---------: ---- ^ Package -------- Order (Please read the Note: Please fill in this page again.) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 526541 8845pif. Doc / 006 pj B7 V. Description of the invention (yf) The proximity of the grating R and the substrate P to expose the pattern of the grating R Exposure device. In addition, in the above embodiment, the projection optical system is represented by a single lens. Of course, a plurality of projection lenses may be arranged so that the projection areas are repeated with each other, that is, a projection optical system of a multiple lens method. When a linear motor (see USP5,623,853 or USP5,528,118) is used for the substrate stage 14 or the grating stage 13, of course, an air-floating type using an air bearing can also be used. And magnetic floating type using Lorentz Force or Reactance force. In addition, each of the supporting platforms 13 and 14 may be in the form of a guide rail, or may be a guide lens type without a guide rail. As far as the driving mechanism of each of the supporting platforms 13 and 14 is concerned, It is possible to use a planar motor that drives each of the carriers 13 and 14 by the electromagnetic force of a magnet unit (permanent magnet) in which magnets are arranged in two dimensions and a motor subunit in which a coil is arranged in two dimensions. In this case, either one of the magnet unit and the motor sub-unit is in contact with the supporting tables 13 and 14, and the other one of the magnet unit and the motor sub-unit is provided on the moving surface side (base) of the supporting stations 13, 14. The reaction force generated by the movement of the substrate carrier 14 is not transmitted to the optical projection system 12, as disclosed in Japanese Patent Laid-Open No. 8-166475 (USP 5,528,118), which uses a frame The component is released mechanically into the bed (base). Therefore, the present invention can be applied to an exposure apparatus having such a structure. The reaction force generated by the movement of the grating carrier 13 has not been transmitted to the optical projection system 12, such as Japanese Patent Laid-Open No. 8-330224 27. This paper size is applicable to the Chinese National Standard (CNS) A4 (210 X 297 mm) Li) I .--- install -------- order ---- (Please read the notes on the back before filling out this page) 526541 8845pif.doc / 006 A7 Printed by the Consumers ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs System B7 5. Disclosed in the description of the invention (") (US S / N 08 / 416,558), which is mechanically released into the bed (base) using a frame member. Therefore, the present invention can be applied to an exposure apparatus having such a structure. As described above, the exposure device 9 as a substrate processing device in this embodiment is enumerated in the scope of the patent application of the present invention to ensure the set mechanical accuracy, electrical accuracy, optical accuracy, etc., and includes various times of each constituent element. System (Sub system). In order to ensure the above-mentioned accuracy, before and after assembly, it is necessary to adjust the optical accuracy of each optical system, adjust the mechanical accuracy of each mechanical system, and adjust the electrical accuracy of each electrical system. The steps of assembling various sub-systems into an exposure device include mechanical connections between the various sub-systems, wire connections of electrical circuits, and pipe connections of pneumatic circuits. Before assembling the various sub-systems into an exposure device, it goes without saying that the individual assembly steps of each sub-system are also included. After the various sub-systems are assembled into an exposure device, integrated adjustments need to be made to ensure various accuracy of the entire exposure device. In addition, the exposure device is preferably manufactured in a clean room capable of managing temperature and cleanliness. As shown in Fig. 9, the liquid crystal display element or semiconductor element includes the function and performance design step 201 of the liquid crystal display element, the step 202 of making a grating R (mask) according to this design step, and the composition of quartz and the like. Step 203 of the glass plate P or a wafer made of silicon material, step 204 of exposing a grating R pattern on the glass plate P (or wafer) using the exposure device 9 described above as an example, assembling a liquid crystal display element, etc. Step 205 (including dicing process, bonding process, and sealing under the condition of wafer and β) 28 ik--,-— — — — — — — Γ — I · 11111-- — — — — — — — C Please read the notes on the back before filling this page) (210x297 mm) 526541 8845pif · doc / 〇〇6 A7 B7 Printed by the Consumers ’Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs (%) Package manufacturing process, etc.) and inspection step 206, etc. Effects of the Invention As described above, in the exposure method of the first patent application scope of the present invention, after the bonding pattern and the first mark are exposed on the substrate, according to the relative positional relationship between the first mark and the pattern, In the present exposure method, even when a plurality of patterns are bonded on a substrate, the so-called effect of sufficiently improving the bonding accuracy can be achieved. Regarding the exposure method of item 2 of the patent application scope of the present invention, it includes sequentially exposing a first mark on each bonding pattern. Therefore, in this exposure method, since not only the correction parameters of each pattern can be obtained, but also the relative joining accuracy between the joining patterns can be obtained. Therefore, the so-called relative joining accuracy for the pattern used as a reference can also be achieved. The degree is used to adjust the correction parameters of other patterns. Regarding the exposure method of item 3 of the patent application scope of the present invention, wherein the tongue is arranged so that the first mark corresponds to the arrangement pitch of the unit pattern. Therefore, in this exposure method, the range when measuring the amount of overlap deviation between the first mark and the unit pattern can be reduced to the level of tens // m, and edge detection can be performed when the detection magnification is increased in the measuring device. Without affecting the deterioration of the measurement accuracy caused by the magnification of the objective lens, it can achieve the effect of being able to perform high-accuracy detection. Regarding the exposure method of item 4 of the scope of application for the present invention, the first mark and pattern are sequentially exposed on the tongue. Therefore, in this exposure method, the measurement of the first mark and unit 29 paper size can be applied to the Chinese national standard (CNSM4 specification (21G X 297 public love) ~ I _--. --------- i --- install -------- order ---- — — — — — (Please read the precautions on the back before filling out this page) Printed by the Intellectual Property Bureau Employee Consumer Cooperatives of the Ministry of Economic Affairs 526541 8845pif.doc / 006 A7 B7 V. Description of the invention (〆)) The range of the pattern's overlap deviation is reduced to the level of tens // m, and edge detection can be performed without increasing the detection magnification in the measuring device without affecting Due to the deterioration of the measurement accuracy caused by the magnification of the objective lens, the so-called high-accuracy detection can be achieved. Regarding the exposure method of item 5 of the present invention, the pattern is a negative pattern or a positive pattern. One of them, the first mark is the other of the negative pattern or the positive pattern. Therefore, in this exposure method, the range when measuring the amount of overlap deviation between the first mark and the unit pattern can be reduced to several tens // m. Degree while increasing in the tester In the case of detection magnification, edge detection can be performed without affecting the deterioration of measurement accuracy caused by the objective lens magnification, and can achieve the effect of so-called high-accuracy detection. The sixth aspect of the scope of patent application for the present invention In the exposure method of item, the patterns are sequentially formed on the first layer of the substrate. Therefore, in this exposure method, even if a pattern as a reference is not formed on the substrate, the so-called sufficient improvement in bonding accuracy can be achieved. Regarding the exposure method according to item 7 of the scope of patent application of the present invention, the first mark is formed in the center pattern of the mask. Therefore, in this exposure method, the magnification or rotation caused by the projection can be caused. The error of the grating component is minimized, and the effect that can be joined with higher accuracy is achieved. Regarding the exposure method of the eighth aspect of the patent application for the present invention, the joining pattern is composed of the same pattern. 30 ί-- -Install i — · — — — Order · — ί * — — — (Please read the notes on the back before filling this page) Paper size applies Chinese National Standard (CNS) A4 specification (210 x 297 mm) 526541 8845pif.doc / 006 A7 B7 V. Description of the invention (Thus, in this exposure method, even when multiple patterns are bonded on the substrate, The so-called sufficient improvement of the joining accuracy can also be achieved. The exposure device of the ninth scope of the patent application for the present invention includes the ability to memorize the correction amount when exposing the joining pattern according to the relative position relationship between the first mark and the pattern, and A device that can bond patterns on a substrate based on the amount of memory correction. Therefore, in this exposure device, even when a plurality of patterns are bonded on a substrate, the effect of sufficiently improving the bonding accuracy can be achieved. ---V--------- Γ 丨 »Install -------- Order -------- > ^ _ w (Please read the notes on the back before filling in this Page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 3 This paper is in accordance with the Chinese national standard (CNSM4 specification (21〇X 297)

Claims (1)

526541 六、申請專利範圍 1.一種曝光方法，適用於在一基板上接合一圖案並曝 光出所希望圖案，該方法包括： (請先閱讀背面之注意事項再填寫本頁) 進行一預備曝光製程以於該基板上曝光出與該圖案不 同之一第一標記與一接合圖案；以及 進行一設定製程，該設定製程根據曝光於該基板上之 該第一標記與該圖案之間的相對位置關係，設定曝光該接 合圖案時之補正量。 如申請專利範圍第’1項所述之曝光方法，其中包括 於每個該接合圖案上曝光出該第一標記。 3. 如申請專利範圍第2項所述之曝光方法，其中該圖 案具有以一設定間距排列之一單位圖案；以及 該第一標記係對應該設定間距而排列。 4. 如申請專利範圍第1項所述之曝光方法，其中包括 重疊曝光該第一標記與該圖案。 ' 5. 如申請專利範圍第1項所述之曝光方法，其中該圖 案爲一負片圖案則該第一標記爲一正片圖案；該第一標記 爲該負片圖案則該圖案爲該正片圖案。 經濟部智慧財產局員工消費合作社印製 6. 如申請專利範圍第1項所述之曝光方法，其中該基 板上形成有複數層之圖案，且該圖案係爲形成於第一層之 圖案。 7. 如申請專利範圍第1項所述之曝光方法，其中該第 一標記係形成於罩幕之中央。 8. 如申請專利範圍第1項所述之曝光方法，其中該接 合圖案是由相同圖案所構成。 32 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 526541 A8 DO 8 8 4 5p i f . doc / 0 06 Qg D8 六、申請專利範圍 9·一種曝光裝置，適用於在一基板上接合一圖案以曝 光出所希望圖案，該裝置包括： 一記憶裝置，該記憶裝置可根據該基板上所曝光之與 該圖案不同之一第一標記與一接合圖案之間的相對位置關 係，記憶曝光該接合圖案時之補正量；以及 一補正裝置，該補正裝置可根據記憶於該記憶裝置內 之補正量於該基板上接合該圖案。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印剔衣 33 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）526541 6. Scope of patent application 1. An exposure method suitable for bonding a pattern on a substrate and exposing the desired pattern, the method includes: (Please read the precautions on the back before filling this page) Perform a preliminary exposure process to Exposing a first mark and a bonding pattern different from the pattern on the substrate; and performing a setting process based on the relative positional relationship between the first mark and the pattern exposed on the substrate, Set the amount of correction when the bonding pattern is exposed. The exposure method according to item 1 of the scope of patent application, which includes exposing the first mark on each of the bonding patterns. 3. The exposure method according to item 2 of the scope of patent application, wherein the pattern has a unit pattern arranged at a set pitch; and the first mark is arranged corresponding to the set pitch. 4. The exposure method according to item 1 of the scope of patent application, which includes overlapping exposure of the first mark and the pattern. '5. The exposure method as described in item 1 of the scope of patent application, wherein the pattern is a negative pattern and the first mark is a positive pattern; the first mark is the negative pattern and the pattern is the positive pattern. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 6. The exposure method as described in item 1 of the scope of patent application, wherein a plurality of layers of patterns are formed on the substrate, and the patterns are patterns formed on the first layer. 7. The exposure method according to item 1 of the scope of patent application, wherein the first mark is formed in the center of the mask. 8. The exposure method according to item 1 of the scope of patent application, wherein the bonding pattern is composed of the same pattern. 32 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 526541 A8 DO 8 8 4 5p if .doc / 0 06 Qg D8 6. Application for patent scope 9. An exposure device, suitable for A pattern is bonded on the substrate to expose a desired pattern, and the device includes: a memory device, the memory device may be based on a relative positional relationship between a first mark different from the pattern exposed on the substrate and a bonding pattern, A correction amount when the bonding pattern is exposed is memorized; and a correction device, the correction device can join the pattern on the substrate according to the correction amount memorized in the memory device. (Please read the precautions on the back before filling out this page.) Employees of the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, Printing and Picking 33 This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
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CN100445871C (en) * 2004-10-28 2008-12-24 探微科技股份有限公司 Wafer bonding method
JP4541847B2 (en) * 2004-11-22 2010-09-08 Ｏｋｉセミコンダクタ株式会社 Alignment accuracy detection method
JP2006203032A (en) * 2005-01-21 2006-08-03 Victor Co Of Japan Ltd Method of manufacturing element
JP2006337631A (en) * 2005-06-01 2006-12-14 Mitsubishi Electric Corp Inspection method and method for manufacturing liquid crystal display apparatus using same
JP5365365B2 (en) * 2009-06-23 2013-12-11 豊和工業株式会社 Inner layer substrate exposure apparatus and substrate and mask peeling method
JP5836678B2 (en) * 2011-07-19 2015-12-24 三菱電機株式会社 Manufacturing method of semiconductor device
CN103092005B (en) * 2013-01-21 2015-01-21 深圳市华星光电技术有限公司 Exposure alignment method for glass substrate
CN105093847B (en) * 2015-08-04 2017-05-10 深圳市华星光电技术有限公司 Exposure machine
US11367703B2 (en) * 2017-10-26 2022-06-21 Shinkawa Ltd. Bonding apparatus
JP7240166B2 (en) * 2018-12-18 2023-03-15 キヤノン株式会社 Determination method, exposure method, exposure apparatus, and article manufacturing method

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JPH10177946A (en) * 1996-12-19 1998-06-30 Sony Corp Pattern and method for measuring exposure accuracy
JP2000277425A (en) * 1999-03-26 2000-10-06 Nec Corp Electron beam lithography method and its device
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