KR20010082607A - 반도체 집적 회로 장치 및 그 제조 방법 - Google Patents

반도체 집적 회로 장치 및 그 제조 방법 Download PDF

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Publication number
KR20010082607A
KR20010082607A KR1020000082927A KR20000082927A KR20010082607A KR 20010082607 A KR20010082607 A KR 20010082607A KR 1020000082927 A KR1020000082927 A KR 1020000082927A KR 20000082927 A KR20000082927 A KR 20000082927A KR 20010082607 A KR20010082607 A KR 20010082607A
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KR
South Korea
Prior art keywords
film
integrated circuit
semiconductor integrated
circuit device
conductive film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020000082927A
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English (en)
Korean (ko)
Inventor
유노가미다까시
나까무라요시따까
노지리가즈오
쯔네까와스께요시
아라이도시유끼
나까하라미와꼬
오오노시게루
사에끼도모노리
이자와마사루
Original Assignee
가나이 쓰토무
가부시키가이샤 히타치세이사쿠쇼
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Filing date
Publication date
Application filed by 가나이 쓰토무, 가부시키가이샤 히타치세이사쿠쇼 filed Critical 가나이 쓰토무
Publication of KR20010082607A publication Critical patent/KR20010082607A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/694—Electrodes comprising noble metals or noble metal oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/01—Manufacture or treatment
    • H10D1/041—Manufacture or treatment of capacitors having no potential barriers
    • H10D1/042—Manufacture or treatment of capacitors having no potential barriers using deposition processes to form electrode extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H10D1/711—Electrodes having non-planar surfaces, e.g. formed by texturisation
    • H10D1/716—Electrodes having non-planar surfaces, e.g. formed by texturisation having vertical extensions

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Drying Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020000082927A 1999-12-28 2000-12-27 반도체 집적 회로 장치 및 그 제조 방법 Ceased KR20010082607A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1999-375745 1999-12-28
JP37574599A JP3676958B2 (ja) 1999-12-28 1999-12-28 半導体集積回路装置の製造方法

Publications (1)

Publication Number Publication Date
KR20010082607A true KR20010082607A (ko) 2001-08-30

Family

ID=18505993

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000082927A Ceased KR20010082607A (ko) 1999-12-28 2000-12-27 반도체 집적 회로 장치 및 그 제조 방법

Country Status (3)

Country Link
US (1) US6607988B2 (https=)
JP (1) JP3676958B2 (https=)
KR (1) KR20010082607A (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
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KR100826756B1 (ko) * 2001-07-31 2008-04-30 엘피다 메모리, 아이엔씨. 반도체 장치의 제조 방법
KR20190111807A (ko) * 2018-03-23 2019-10-02 도쿄엘렉트론가부시키가이샤 에칭 방법
KR20220087467A (ko) * 2019-10-21 2022-06-24 도쿄엘렉트론가부시키가이샤 플라즈마 공정을 사용하여 금속 막을 에칭하기 위한 방법

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US6435190B1 (en) * 2000-06-14 2002-08-20 Syde A. Taheri Autogenous cell patch cardio myoplasty and advanced muscle graft implantation system
US7153195B2 (en) 2000-08-30 2006-12-26 Micron Technology, Inc. Methods and apparatus for selectively removing conductive material from a microelectronic substrate
US7134934B2 (en) 2000-08-30 2006-11-14 Micron Technology, Inc. Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium
US7078308B2 (en) * 2002-08-29 2006-07-18 Micron Technology, Inc. Method and apparatus for removing adjacent conductive and nonconductive materials of a microelectronic substrate
US7220166B2 (en) 2000-08-30 2007-05-22 Micron Technology, Inc. Methods and apparatus for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate
US7129160B2 (en) 2002-08-29 2006-10-31 Micron Technology, Inc. Method for simultaneously removing multiple conductive materials from microelectronic substrates
US7112121B2 (en) 2000-08-30 2006-09-26 Micron Technology, Inc. Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate
JP4497260B2 (ja) * 2000-08-31 2010-07-07 エルピーダメモリ株式会社 半導体集積回路装置およびその製造方法
US6399492B1 (en) * 2001-03-15 2002-06-04 Micron Technology, Inc. Ruthenium silicide processing methods
JP2002280360A (ja) * 2001-03-16 2002-09-27 Nec Corp 半導体装置の製造方法
KR100476936B1 (ko) * 2002-10-30 2005-03-17 삼성전자주식회사 엠아이엠 구조의 커패시터를 갖는 반도체소자 및 그형성방법
DE10255841A1 (de) 2002-11-29 2004-06-17 Infineon Technologies Ag Kondensator mit ruthenhaltigen Elektroden
US7112122B2 (en) 2003-09-17 2006-09-26 Micron Technology, Inc. Methods and apparatus for removing conductive material from a microelectronic substrate
US8228594B2 (en) * 2003-11-01 2012-07-24 Silicon Quest Kabushiki-Kaisha Spatial light modulator with metal layers
US7153777B2 (en) 2004-02-20 2006-12-26 Micron Technology, Inc. Methods and apparatuses for electrochemical-mechanical polishing
TWI278035B (en) * 2004-03-31 2007-04-01 Hynix Semiconductor Inc Method for fabricating semiconductor device
US7194798B2 (en) * 2004-06-30 2007-03-27 Hitachi Global Storage Technologies Netherlands B.V. Method for use in making a write coil of magnetic head
US7566391B2 (en) 2004-09-01 2009-07-28 Micron Technology, Inc. Methods and systems for removing materials from microfeature workpieces with organic and/or non-aqueous electrolytic media
KR100599091B1 (ko) 2004-10-06 2006-07-12 삼성전자주식회사 캐패시터 제조 방법
EP1800334A4 (en) * 2004-10-08 2012-07-04 Silverbrook Res Pty Ltd METHOD FOR REMOVING POLYMER COATING FROM AN ATROUATED TRACK
KR100589078B1 (ko) * 2004-11-29 2006-06-12 삼성전자주식회사 커패시터 제조 방법 및 이를 채용한 디램 장치의 제조 방법
US7438949B2 (en) * 2005-01-27 2008-10-21 Applied Materials, Inc. Ruthenium containing layer deposition method
US20070271751A1 (en) * 2005-01-27 2007-11-29 Weidman Timothy W Method of forming a reliable electrochemical capacitor
US20060162658A1 (en) * 2005-01-27 2006-07-27 Applied Materials, Inc. Ruthenium layer deposition apparatus and method
US7416676B2 (en) * 2005-02-16 2008-08-26 Tokyo Electron Limited Plasma etching method and apparatus, control program for performing the etching method, and storage medium storing the control program
JP4906278B2 (ja) * 2005-06-06 2012-03-28 エルピーダメモリ株式会社 半導体装置の製造方法
KR100662542B1 (ko) * 2005-06-17 2006-12-28 제일모직주식회사 반사방지 하드마스크 조성물 및 이를 이용하여 기판 상에패턴화된 재료 형상을 형성시키는 방법
US20070190362A1 (en) * 2005-09-08 2007-08-16 Weidman Timothy W Patterned electroless metallization processes for large area electronics
KR100665758B1 (ko) * 2005-09-15 2007-01-09 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물
KR100697979B1 (ko) * 2005-09-26 2007-03-23 제일모직주식회사 반사방지 하드마스크 조성물
CN100407419C (zh) * 2005-10-28 2008-07-30 联华电子股份有限公司 高深宽比开口及其制作方法
JP4552835B2 (ja) * 2005-11-14 2010-09-29 エルピーダメモリ株式会社 キャパシタの製造方法
US7608195B2 (en) * 2006-02-21 2009-10-27 Micron Technology, Inc. High aspect ratio contacts
US20070243452A1 (en) * 2006-04-14 2007-10-18 Applied Materials, Inc. Reliable fuel cell electrode design
JP4882548B2 (ja) * 2006-06-30 2012-02-22 富士通セミコンダクター株式会社 半導体装置及びその製造方法
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US20090139568A1 (en) * 2007-11-19 2009-06-04 Applied Materials, Inc. Crystalline Solar Cell Metallization Methods
US8288274B2 (en) * 2008-04-21 2012-10-16 Hynix Semiconductor Inc. Method of forming noble metal layer using ozone reaction gas
WO2010009297A2 (en) * 2008-07-16 2010-01-21 Applied Materials, Inc. Hybrid heterojunction solar cell fabrication using a doping layer mask
JP2012501550A (ja) * 2008-08-27 2012-01-19 アプライド マテリアルズ インコーポレイテッド 印刷誘電体障壁を使用するバックコンタクト太陽電池
US9293319B2 (en) 2011-03-09 2016-03-22 Micron Technology, Inc. Removal of metal
FR2973159B1 (fr) * 2011-03-22 2013-04-19 Soitec Silicon On Insulator Procede de fabrication d'un substrat de base
KR20130053017A (ko) * 2011-11-14 2013-05-23 에스케이하이닉스 주식회사 반도체 소자
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CN107078040B (zh) 2014-10-17 2021-01-15 盛美半导体设备(上海)股份有限公司 阻挡层的去除方法和半导体结构的形成方法
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100826756B1 (ko) * 2001-07-31 2008-04-30 엘피다 메모리, 아이엔씨. 반도체 장치의 제조 방법
KR20190111807A (ko) * 2018-03-23 2019-10-02 도쿄엘렉트론가부시키가이샤 에칭 방법
KR20220087467A (ko) * 2019-10-21 2022-06-24 도쿄엘렉트론가부시키가이샤 플라즈마 공정을 사용하여 금속 막을 에칭하기 위한 방법

Also Published As

Publication number Publication date
US6607988B2 (en) 2003-08-19
US20010006245A1 (en) 2001-07-05
JP3676958B2 (ja) 2005-07-27
JP2001189303A (ja) 2001-07-10

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