KR20000056355A - 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물 - Google Patents

고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물 Download PDF

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Publication number
KR20000056355A
KR20000056355A KR1019990005604A KR19990005604A KR20000056355A KR 20000056355 A KR20000056355 A KR 20000056355A KR 1019990005604 A KR1019990005604 A KR 1019990005604A KR 19990005604 A KR19990005604 A KR 19990005604A KR 20000056355 A KR20000056355 A KR 20000056355A
Authority
KR
South Korea
Prior art keywords
photoresist
solvent
composition
exposure
heptanone
Prior art date
Application number
KR1019990005604A
Other languages
English (en)
Korean (ko)
Inventor
정재창
이근수
노치형
공근규
백기호
Original Assignee
김영환
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김영환, 현대전자산업 주식회사 filed Critical 김영환
Priority to KR1019990005604A priority Critical patent/KR20000056355A/ko
Priority to GB0001959A priority patent/GB2347429A/en
Priority to JP2000024182A priority patent/JP2000241964A/ja
Priority to IT2000TO000137 priority patent/IT1319833B1/it
Priority to CN 00102769 priority patent/CN1264060A/zh
Priority to DE2000107429 priority patent/DE10007429A1/de
Priority to NL1014417A priority patent/NL1014417C2/nl
Priority to FR0002044A priority patent/FR2790114A1/fr
Publication of KR20000056355A publication Critical patent/KR20000056355A/ko

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
KR1019990005604A 1999-02-19 1999-02-19 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물 KR20000056355A (ko)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019990005604A KR20000056355A (ko) 1999-02-19 1999-02-19 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물
GB0001959A GB2347429A (en) 1999-02-19 2000-01-28 Photoresist in a non-Newtonian solvent
JP2000024182A JP2000241964A (ja) 1999-02-19 2000-02-01 フォトレジスト組成物、フォトレジストパターンの形成方法、及び、半導体素子
IT2000TO000137 IT1319833B1 (it) 1999-02-19 2000-02-11 Composizione di fotoresist avente una eccellente resistenzaall'effetto di ritardo da post esposizione.
CN 00102769 CN1264060A (zh) 1999-02-19 2000-02-17 具有优异的抗后曝光延迟效应的光致抗蚀剂组合物
DE2000107429 DE10007429A1 (de) 1999-02-19 2000-02-18 Photoresistzusammensetzung mit ausgezeichneter Beständigkeit gegenüber der Wirkung von Verzögerung nach dem Belichten
NL1014417A NL1014417C2 (nl) 1999-02-19 2000-02-18 Fotoresistsamenstelling met uitstekende bestendigheid tegen het effect van een vertraging na belichting.
FR0002044A FR2790114A1 (fr) 1999-02-19 2000-02-18 Composition photoresistante presentant une excellente resistance a l'effet retard de post-insolation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990005604A KR20000056355A (ko) 1999-02-19 1999-02-19 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물

Publications (1)

Publication Number Publication Date
KR20000056355A true KR20000056355A (ko) 2000-09-15

Family

ID=19574624

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019990005604A KR20000056355A (ko) 1999-02-19 1999-02-19 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물

Country Status (8)

Country Link
JP (1) JP2000241964A (ja)
KR (1) KR20000056355A (ja)
CN (1) CN1264060A (ja)
DE (1) DE10007429A1 (ja)
FR (1) FR2790114A1 (ja)
GB (1) GB2347429A (ja)
IT (1) IT1319833B1 (ja)
NL (1) NL1014417C2 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100713237B1 (ko) * 2005-12-26 2007-05-02 제일모직주식회사 저장 안정성이 우수한 레지스트 하층막용 하드마스크조성물

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583095B1 (ko) * 2000-06-30 2006-05-24 주식회사 하이닉스반도체 광산 발생제와 함께 광 라디칼 발생제(ｐｒｇ)를 포함하는포토레지스트 조성물
TWI366067B (en) 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2320718A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Rubber compound
US2320717A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Terpene coating
KR920020262A (ko) * 1991-04-26 1992-11-20 모리 히데오 포지티브 레지스트 조성물
US5324804A (en) * 1992-04-29 1994-06-28 Ciba-Geigy Corporation Photoresist material based on polystyrenes
KR950012148A (ko) * 1993-10-28 1995-05-16 미우라 아끼라 포토레지스트 조성물
US5738975A (en) * 1993-12-28 1998-04-14 Nec Corporation Photosensitive resin and method for patterning by use of the same
WO1998040789A1 (en) * 1997-03-07 1998-09-17 Clariant International Ltd. Positive photoresists containing novel photoactive compounds
JPH10319595A (ja) * 1997-05-20 1998-12-04 Fujitsu Ltd レジスト組成物及びレジストパターン形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5879857A (en) * 1997-02-21 1999-03-09 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
KR100220953B1 (ko) * 1996-12-31 1999-10-01 김영환 아미드 또는 이미드를 도입한 ArF 감광막 수지
US6180316B1 (en) * 1998-01-16 2001-01-30 Jsr Corporation Radiation sensitive resin composition
KR19990081722A (ko) * 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
KR100376983B1 (ko) * 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100376984B1 (ko) * 1998-04-30 2003-07-16 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100419028B1 (ko) * 1998-05-13 2004-07-19 주식회사 하이닉스반도체 옥사비시클로화합물,이화합물이도입된포토레지스트중합체및이를이용한포토레지스트미세패턴의형성방법
KR100271420B1 (ko) * 1998-09-23 2001-03-02 박찬구 화학증폭형 양성 포토레지스트 조성물
KR100274119B1 (ko) * 1998-10-08 2001-03-02 박찬구 감방사선성 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2320718A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Rubber compound
US2320717A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Terpene coating
KR920020262A (ko) * 1991-04-26 1992-11-20 모리 히데오 포지티브 레지스트 조성물
US5324804A (en) * 1992-04-29 1994-06-28 Ciba-Geigy Corporation Photoresist material based on polystyrenes
KR950012148A (ko) * 1993-10-28 1995-05-16 미우라 아끼라 포토레지스트 조성물
US5738975A (en) * 1993-12-28 1998-04-14 Nec Corporation Photosensitive resin and method for patterning by use of the same
WO1998040789A1 (en) * 1997-03-07 1998-09-17 Clariant International Ltd. Positive photoresists containing novel photoactive compounds
JPH10319595A (ja) * 1997-05-20 1998-12-04 Fujitsu Ltd レジスト組成物及びレジストパターン形成方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100713237B1 (ko) * 2005-12-26 2007-05-02 제일모직주식회사 저장 안정성이 우수한 레지스트 하층막용 하드마스크조성물

Also Published As

Publication number Publication date
DE10007429A1 (de) 2000-11-23
FR2790114A1 (fr) 2000-08-25
GB2347429A (en) 2000-09-06
NL1014417C2 (nl) 2001-11-13
ITTO20000137A1 (it) 2001-08-11
GB0001959D0 (en) 2000-03-22
NL1014417A1 (nl) 2000-08-22
JP2000241964A (ja) 2000-09-08
CN1264060A (zh) 2000-08-23
IT1319833B1 (it) 2003-11-03

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