KR20000056355A - Photoresist composition having superior characteristics in the presence of high concentration of amine - Google Patents

Photoresist composition having superior characteristics in the presence of high concentration of amine Download PDF

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Publication number
KR20000056355A
KR20000056355A KR1019990005604A KR19990005604A KR20000056355A KR 20000056355 A KR20000056355 A KR 20000056355A KR 1019990005604 A KR1019990005604 A KR 1019990005604A KR 19990005604 A KR19990005604 A KR 19990005604A KR 20000056355 A KR20000056355 A KR 20000056355A
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South Korea
Prior art keywords
photoresist
exposure
solvent
composition
heptanone
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KR1019990005604A
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Korean (ko)
Inventor
정재창
이근수
노치형
공근규
백기호
Original Assignee
김영환
현대전자산업 주식회사
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Priority to KR1019990005604A priority Critical patent/KR20000056355A/en
Publication of KR20000056355A publication Critical patent/KR20000056355A/en

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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0048Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/162Coating on a rotating support, e.g. using a whirler or a spinner

Abstract

PURPOSE: A photoresist composition excellent in resistance to post exposure delay and method for forming a photoresist pattern using the same are provided which can obtain the title fine pattern without special additive processes. CONSTITUTION: In a photoresist composition containing a photoresist polymer and a mixed organic solvent and a photoacid, the mixed organic solvent as a non-Newtonian solvent is (a) a ketone solvent selected from the group of cyclohexanone, isobuty methyl ketone, 2-heptanone, 3-heptanone, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopantanone, 2-methylcyclopentanone, 3-methylcyclohexanone, and 2,4-dimethylpentanone, (b) ethyl lactate or (c) 2-methoxyethyl acetate.

Description

Photoresist composition having excellent properties in the presence of a high concentration of amines {PHOTORESIST COMPOSITION HAVING SUPERIOR CHARACTERISTICS IN THE PRESENCE OF HIGH CONCENTRATION OF AMINE}

The present invention relates to a photoresist composition and a method of forming a photoresist pattern using the same, and more particularly, to a photoresist composition excellent in resistance to post-exposure delay and a method of forming a photoresist using the same.

In order to achieve high sensitivity in the microfabrication process of semiconductor manufacturing, a chemically amplified deep ultra violet (DUV) photoresist has recently been in the spotlight, and its composition is sensitive to photoacid generators and acids. It is prepared by blending a matrix polymer and a solvent.

In the case of the positive photoresist, the action mechanism of the photoresist generates an acid when the photoacid generator receives ultraviolet light from the light source, and the acid or the main chain or side chain of the matrix polymer is decomposed by the acid, and the polarity of the photoresist is deteriorated. It greatly changes and is dissolved by the developer and disappears. On the other hand, the part which does not receive light does not melt | dissolve in a developing solution because it has an original structure as it is. In this way, the mask image can remain on the substrate as a positive image. In such a lithography process, the resolution may depend on the wavelength of the light source, thereby forming a fine pattern as the wavelength of the light source decreases.

In general, the photoresist requires excellent etching resistance, heat resistance and adhesion, and in addition, the photoresist used as the ArF photoresist may be developed in a 2.38% aqueous tetramethylammonium hydroxide (TMAH) solution. However, it is very difficult to synthesize a polymer that satisfies all these properties. For example, synthesis of a polymer having a main chain of poly (acrylate) is easy, but there are problems in securing etching resistance and developing process. Such etching resistance may be increased by adding aliphatic ring units in the main chain or the side chain. (reference). However, the aliphatic ring unit can be used as an ArF photosensitive agent by adding an aliphatic ring unit to the main chain or the side chain, but the introduction of the aliphatic ring unit has caused a serious problem in the actual semiconductor manufacturing process. In other words, if there is a post exposure delay phenomenon, the acid generated by exposure is lost due to amine contamination of the external atmosphere, so that a fine pattern cannot be obtained or T-top is exposed. It became. This phenomenon is more prominent especially when the amine concentration of the environment (environment) is 30ppb or more, so a countermeasure for minimizing the amount of amine in the air during the process is required.

In order to overcome this phenomenon, ① method of adding amine to photosensitizer and ② method of using sweet photo acid generato (Frank Houlihan et. Al., Journal of photopolymer science and technology, volume 11, number 3) , 1998, 419-430 pages), or (3) J. Byers et. Al., Journal of photopolymer science and technology, volume 11, number 3, 1998, 465-474 pages) However, since these methods have an effect only when the amine concentration of the external atmosphere is at least 5 ppb or less, a separate additional process is required to control the amine concentration in the atmosphere, which leads to an increase in the process cost.

In order to solve this problem, an object of the present invention is to provide a photoresist composition capable of obtaining an excellent photoresist pattern even in an atmosphere in which a high concentration of amine is present.

1 to 13 are SEM photographs showing the photoresist patterns obtained in the respective examples of the present invention, respectively.

FIG. 14 is a diagram showing data obtained in Example 14 of the present invention. FIG.

In order to achieve the above object,

A photoresist composition comprising (i) a photoresist polymer and (ii) a mixed organic solvent, wherein the mixed organic solvent is a non-Newtonian solvent.

At this time, the non-Newtonian organic solvent

(a) cyclohexanone, isobutyl methyl ketone, 2-heptanone, 3-heptanone, 4-heptanone, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopentanone, 2 Or a ketone solvent selected from the group consisting of methylcyclohexanone, 3-methylcyclohexanone and 2,4-dimethylpentanone,

(b) ethyl lactate, or

(c) 2-methoxyethyl acetate and the like.

Hereinafter, the present invention will be described in more detail with reference to specific examples.

The inventors of the present invention have focused on a method of manufacturing a photosensitive agent resistant to post exposure delay, and it is surprising that changing the tertiary structure of the photosensitive polymer can make the photosensitive agent resistant to the post exposure delay. I learned.

In general, when a resin containing a large number of aliphatic ring units is coated on a wafer, a large amount of voids (pores) are formed between molecules. These pores facilitate the release of the acid generated by the exposure onto the photoresist film and also the penetration of the amine, which frees the acid generated by the exposure. Therefore, if the post-exposure delay occurs, the external amine neutralizes the acid generated by the light source, and when it is baked at high temperature for diffusion of the acid just before development, the acid evaporates to perform chemical amplification role and thus cannot form a fine pattern. Let. Therefore, the method of reducing voids is the most important to solve this problem.

To this end, the present inventors used a specific organic solvent. In more detail, the structure of the photoresist polymer in a non-Newtonian solvent has a rigid rod, ellipse, or helix structure to reduce the inter-polymer voids, so the photoresist pattern is excellent even when there is a post-exposure delay. It confirmed that this was obtained.

In the following examples, the present inventors compared the form of the pattern obtained by changing the kind of solvent used as a mixed organic solvent in a photoresist composition. All the examples below were carried out under an atmosphere with an amine residual of 30 ppb.

Example 1 Use of Newtonian Solvent

① Dissolve 1 g of a resin composed of only the aliphatic ring units of the formula (1), and (2) 0.012 g of triphenyl sulfonium triflate as a photo-acid generator. ③ Dissolve in 7 g of propylene glycol methyl ether acetate. A resist composition is prepared.

<Formula 1>

In this case, the a, b, c and d is the polymerization ratio of each comonomer.

The photoresist composition was then coated at room temperature (23 ° C.) on a wafer pretreated with hexamethyldisilazane.

Then, given at 150 ℃ baked 90 seconds (soft bake) ArF going by increasing the 1mJ / cm2 by no Gwangyang from 10 mJ / cm 2 using an exposure equipment to 100mJ / cm 2 was exposed to 91 die (Die) Thereafter, post-baking was performed at 140 ° C. for 90 seconds immediately without post-exposure delay.

Thereafter, development was performed with an aqueous 2.AH wt% solution of TMAH, but no pattern was formed as shown in FIG. This is because the acid generated in the exposure process is dissipated by the amine in the air during the post-exposure delay process.

Example 2 Use of Newtonian Solvent

① 1g of resin consisting of the aliphatic ring unit of Formula 1 only ② ② 0.012g of triphenyl sulfonium triflate as photoacid generator ③ 6g of ethyl 3-ethoxy propionate solvent It melt | dissolved in and obtained the PR composition. Subsequently, the PR composition was coated on a wafer pretreated with hexamethyldisilazane at room temperature and baked at 150 ° C. for 90 seconds (soft bake) using an ArF exposure apparatus to 100 mJ / cm 2 at 10 mJ / cm 2. 91 dies were exposed while increasing the exposure amount by 1 mJ / cm 2.

Subsequently, it post-baked for 90 seconds immediately at 140 degreeC, without the post-exposure delay.

Subsequently, development was carried out with 2.38 wt% aqueous TMAH solution, but no pattern was formed as shown in FIG. 2.

Example 3 Use of Non-Newtonian Solvents

① A resin composition consisting of only the aliphatic ring unit of the formula (1) and ② ② 0.012g of triphenyl sulfonium triflate as a photo-acid generator (3) was dissolved in 6g of ethyl lactate solvent to prepare a PR composition.

The PR composition in hexamethyldisilazane (hexamethyldisilazane) with a coating at room temperature over the preprocessed wafer and junhu at 150 ℃ baked 90 seconds (soft bake) ArF 10 mJ using an exposure equipment / cm 2 to 100mJ / cm 2 1mJ 91 dies were exposed by increasing the exposure amount by / cm &lt; 2 &gt;.

Subsequently, a post exposure delay was performed for 30 minutes, and then post-baked at 140 ° C. for 90 seconds, and developed with a 2.38 wt% aqueous TMAH solution. As shown in FIG. 3, the PR pattern was 0.14 μm. Was obtained.

Example 4 Use of Non-Newtonian Solvents

① 1 g of a resin consisting of the aliphatic monomers of Formula 1 and ② 0.012 g of triphenyl sulfonium triflate as a photo-acid generator is dissolved in 6 g of a cyclohexanon solvent instead of ethyl lactate. Was prepared.

The PR composition in hexamethyldisilazane (hexamethyldisilazane) with a coating at room temperature over the preprocessed wafer and junhu at 150 ℃ baked 90 seconds (soft bake) ArF 10 mJ using an exposure equipment / cm 2 to 100mJ / cm 2 1mJ After exposure of 91 dies while increasing the exposure amount by / cm2, a post-exposure delay process of 30 minutes was performed.

Subsequently, post-baking was again performed at 140 ° C. for 90 seconds, followed by development with a 2.38 wt% aqueous TMAH solution to obtain a PR pattern of 0.13 μm as shown in FIG. 4.

Example 5

0.13 μm fine pattern as shown in FIG. 5 in the same manner as in Example 4, except that 6 g of 2-methoxyethyl acetate was used instead of 6 g of a cyclohexanon solvent. Got.

Example 6

As shown in FIG. 6, a PR pattern of 0.16 μm was obtained in the same manner as in Example 4 except that 6 g of 2-heptanone was used instead of 6 g of a cyclohexanon solvent. .

Example 7

A PR pattern of 0.15 μm was obtained as shown in FIG. 7 in the same manner as in Example 4, except that 6 g of 3-heptanone was used instead of 6 g of a cyclohexanon solvent.

Example 8

A PR pattern of 0..19 μm as shown in FIG. 8 in the same manner as in Example 4 except that 6 g of 4-heptanone is used instead of 6 g of cyclohexanon solvent. Got.

Example 9

A pattern of 0.13 μm was obtained as shown in FIG. 9 in the same manner as in Example 4, except that 8 g of isobutyl methy ketone was used instead of 6 g of a cyclohexanon solvent.

Example 10)

0.15 μm as shown in FIG. 10 in the same manner as in Example 4, except for using a mixed solvent of 3 g of cyclonuxanone solvent and 3 g of isobutyl methyl ketone instead of 6 g of a cyclohexanon solvent. A pattern was obtained.

Example 11

0.13 μm as shown in FIG. 11 in the same manner as in Example 4, except for using a mixed solvent of 3 g of a cyclonuxanone solvent and 3 g of 2-heptanone instead of 6 g of a cyclohexanone solvent. PR patterns were obtained.

Example 12)

0.14 as shown in FIG. 12 in the same manner as in Example 4, except for using a mixed solvent of 3 g of cyclonuxanone solvent and 3 g of 2-methoxyethyl acetate instead of 6 g of cyclohexanone solvent. A pattern of μm was obtained.

Example 13) Using Newtonian Solvent and Sweet Photoacid Generator

Under an amine concentration having an external atmosphere of 30 ppb or more, (1g) 1g of a resin composed of an aliphatic ring unit of Formula 1 and (ii) 0.01g of triphenyl sulfonium triflate as a photoacid generator, and a sweet photoacid generator of Formula 2 below. sweet PAG) 0.01g was dissolved in 7g of propylene glycol methyl ether acetate solvent to prepare a PR composition.

The PR composition thus obtained was coated on a wafer pretreated with hexamethyldisilazane at 23 ° C. and baked at 150 ° C. for 90 seconds (soft bake) using an ArF exposure apparatus to 100 mJ / cm 2 at 10 mJ / cm 2. After exposure to 91 dies, and immediately after exposure without baking, it was developed with a TMAH aqueous solution of 2.38wt% after baking for 90 seconds at 140 ° C (post exposure bake), as shown in FIG. This did not form.

<Formula 2>

In summary, as in Examples 1), 2) and 13), when a Newtonian fluid was used, no pattern was obtained despite the absence of post-exposure delay. In particular, in the case of the embodiment 13), it can be seen that even when a sweet photoacid generator (sweet PAG) is used in the atmosphere where a high concentration of amine is present, no significant effect can be obtained.

On the other hand, when a non-Newtonian solvent was used, an excellent pattern was obtained even though there was a post-exposure delay. This is because, when the PR polymer is mixed with a non-Newtonian solvent, the molecular structure is deformed into a rigid rod, elliptical, or helical structure to reduce voids after coating.

Therefore, when the amine concentration in the air is high, it can be seen that the method of changing the PR polymer structure in the PR composition is more effective as in Examples 3 to 12.

In addition to the solvents used in Examples 3 to 12, 2-methylcyclopentanone, 3-methylcyclopentanone, 2-methylcyclohexanone, 3-methylcyclohexanone, and 2,4-dimethylpenta Ketone solvents such as paddy fields can also be used as solvents which are very stable to post-exposure delays.

In order to examine in more detail why PR polymers are stable to post-exposure delays in certain solvents, the present inventors have described the following methods: ① 2-heptanone ② isobutylmethyl ketone ③ 2-methoxyethyl acetate and ④ propylene glycol methyl Viscosity experiments were performed to examine the structure of the polymer in the four solvents of ether acetate.

Example 14

① 2-heptanone ② isobutyl methyl ketone ③ 2-methoxyethyl acetate and ④ propylene glycol methyl ether acetate 4 g of each of 10 g of the resin of Formula 1 was dissolved in 40 g of the viscosity while changing the shear rate (shear rate) Was measured to infer the structure of the resin in the solvent. As a result, the same result as in FIG. 14 was obtained.

Referring to FIG. 14, the propylene glycol methyl ether acetate, which is unstable in post-exposure delay, has properties as a newtonian fluid independent of the shear rate change.

On the other hand, it can be seen that ① 2-heptanone ② isobutylmethyl ketone ③ 2-methoxyethyl acetate, which shows a good effect on post-exposure delay, exhibits the characteristics of non-newtonian fluid (shear thinning). There may be indirect evidence that the structure of the PR polymer in the PR composition has a rigid rod, elliptical, or helix structure. In this case, as compared with the other cases, the voids present in the polymer are reduced to prevent the amine from diffusing into the coated PR film, and as a result, a PR pattern stable to post-exposure delay can be obtained.

According to the present invention, by simply using a specific solvent, it is possible to obtain a good photoresist micropattern without any additional process even in an atmosphere where a high concentration of amine is present, thereby reducing the process cost.

Claims (15)

  1. A photoresist composition comprising (i) a photoresist polymer and (ii) a mixed organic solvent,
    The mixed organic solvent is a photoresist composition, characterized in that the non-Newtonian solvent.
  2. The method of claim 1,
    The photoresist composition is a composition characterized in that the chemical amplification further comprising (iii) a photoacid generator.
  3. The method of claim 1,
    The non-Newtonian solvent
    (a) cyclohexanone, isobutyl methyl ketone, 2-heptanone, 3-heptanone, 4-heptanone, cyclopentanone, 2-methylcyclopentanone, 3-methylcyclopentanone, 2 Or a ketone solvent selected from the group consisting of methylcyclohexanone, 3-methylcyclohexanone and 2,4-dimethylpentanone,
    (b) ethyl lactate, or
    (c) 2-methoxyethyl acetate.
  4. The method of claim 1,
    The photoresist polymer is a composition characterized in that the main chain is a copolymer consisting of aliphatic ring units.
  5. The method of claim 1,
    The photoresist polymer is a composition, characterized in that the compound of Formula 1.
    <Formula 1>
    In this case, the a, b, c and d is the polymerization ratio of each comonomer.
  6. (a) applying the photoresist composition of claim 1 on top of a predetermined etching layer to form a photoresist film;
    (b) exposing the photoresist film using an exposure apparatus;
    and (c) developing the resultant photoresist pattern.
  7. The method of claim 6,
    And the exposure apparatus employs a light source having a wavelength of 250 nm or less.
  8. The method of claim 7, wherein
    And the exposure apparatus has an exposure source selected from the group consisting of ArF light (193 nm), KrF light (248 nm), E-beam, X-ray, EUV and deep ultra violet (DUV).
  9. The method of claim 6,
    Wherein said developing step is performed using an alkaline developer.
  10. The method of claim 9,
    The alkaline developer is characterized in that 0.01 to 5wt% TMAH aqueous solution.
  11. The method of claim 6,
    And before and / or after the step (b).
  12. The method of claim 11,
    The baking process is characterized in that performed for 1 to 5 minutes at 90 to 170 ℃.
  13. The method of claim 6,
    And after step (b) there is a post exposure delay.
  14. The method of claim 13,
    And an amine concentration in the atmosphere at the time of the post-exposure delay is 30 ppb or more.
  15. The semiconductor device manufactured by the method of Claim 6.
KR1019990005604A 1999-02-19 1999-02-19 Photoresist composition having superior characteristics in the presence of high concentration of amine KR20000056355A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019990005604A KR20000056355A (en) 1999-02-19 1999-02-19 Photoresist composition having superior characteristics in the presence of high concentration of amine

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
KR1019990005604A KR20000056355A (en) 1999-02-19 1999-02-19 Photoresist composition having superior characteristics in the presence of high concentration of amine
GB0001959A GB2347429A (en) 1999-02-19 2000-01-28 Photoresist in a non-Newtonian solvent
JP2000024182A JP2000241964A (en) 1999-02-19 2000-02-01 Photoresist composition, forming method of photoresist pattern and semiconductor device
ITTO20000137 IT1319833B1 (en) 1999-02-19 2000-02-11 photoresist composition having an excellent post exposure delay resistenzaall'effetto.
CN 00102769 CN1264060A (en) 1999-02-19 2000-02-17 Photoresist composition with excellent anti-back-exposure delayeed effect
NL1014417A NL1014417C2 (en) 1999-02-19 2000-02-18 Photoresist composition with excellent resistance to the effect of a delay after exposure.
FR0002044A FR2790114A1 (en) 1999-02-19 2000-02-18 Photoresistant composition having excellent resistance to the post-insolation delay effect
DE2000107429 DE10007429A1 (en) 1999-02-19 2000-02-18 Photoresist composition with excellent resistance to the effect of delay after exposure

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KR20000056355A true KR20000056355A (en) 2000-09-15

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JP (1) JP2000241964A (en)
KR (1) KR20000056355A (en)
CN (1) CN1264060A (en)
DE (1) DE10007429A1 (en)
FR (1) FR2790114A1 (en)
GB (1) GB2347429A (en)
IT (1) IT1319833B1 (en)
NL (1) NL1014417C2 (en)

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ITTO20000137A1 (en) 2001-08-13
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DE10007429A1 (en) 2000-11-23
NL1014417A1 (en) 2000-08-22

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