GB2347429A - Photoresist in a non-Newtonian solvent - Google Patents

Photoresist in a non-Newtonian solvent Download PDF

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Publication number
GB2347429A
GB2347429A GB0001959A GB0001959A GB2347429A GB 2347429 A GB2347429 A GB 2347429A GB 0001959 A GB0001959 A GB 0001959A GB 0001959 A GB0001959 A GB 0001959A GB 2347429 A GB2347429 A GB 2347429A
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United Kingdom
Prior art keywords
photoresist
solvent
process according
photoresist composition
newtonian
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Application number
GB0001959A
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GB0001959D0 (en
Inventor
Jae Chang Jung
Genu Su Lee
Chi Hyeong Roh
Keun Kyu Kong
Ki-Ho Baik
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SK Hynix Inc
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Hyundai Electronics Industries Co Ltd
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Publication of GB0001959D0 publication Critical patent/GB0001959D0/en
Publication of GB2347429A publication Critical patent/GB2347429A/en
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)

Abstract

A photoresist composition comprising a photoresist polymer and an organic solvent which imparts a shear thinning characteristic to the composition e.g. a non-Newtonian ketone solvent such as cyclohexanone or ester solvent such as ethyl lactate. A process for forming a photoresist pattern using the composition is also disclosed.

Description

PHOTORESIST COMPOSITION HAVING EXCELLENT RESISTANCE TO POST EXPOSURE DELAY EFFECT Field of the Invention The present invention relates to a photoresist composition and a process for forming a photoresist pattern using the same. More specifically, it relates to a photoresist composition with excellent resistance against post exposure delay and process for forming a photoresist pattern using it.
Background of the Invention Recently, chemical amplification type DUV photoresists have been investigated in order to achieve high sensitivity in minute image formation processes for preparing semiconductor devices. Such photoresists are prepared by blending a photoacid generator and matrix resin polymer having an acid labile group.
According to the reaction mechanism of such a photoresist, the photoacid generator generates acid when it is illuminated by a light source, and the main chain or branched chain of the resin is reacted with the generated acid to be decomposed or crosslinked.
The polarity change of the resin induces solubility differences between the exposed portion and unexposed portion in the developing solution, to form a predetermined pattern.
In the lithography process, resolution depends upon the wavelength of the light source-the shorter the wavelength, the more minute pattern can be formed.
In general, a photoresist (sometimes abbreviated herein as"PR") must satisfy various requisites such as excellent etching resistance, heat resistance and adhesiveness, and more preferably, it should be developable in 2.38 wt% aqueous tetramethylammonium hydroxide (TMAH) solution. However, it is very difficult to synthesize a polymer that satisfies all of these requisites. For example, a polymer having a polyacrylate main chain can be easily synthesized, but it has poor etching resistance and has difficulties in the developing process. In order to secure etching resistance, it has been considered to add an alicyclic unit to the main chain of the PR polymer. However, in this case, another practical problem occurs in the process for manufacturing the semiconductor. That is, the acid generated by exposure of the photoresist may react with environmental amine compounds thereby being reduced-during the time between exposure and post exposure baking ("post exposure delay effect"). Thus, the pattern may be deformed or the formed pattern may have T-shape (e. g.,"T-topping"of the pattern). It is required to minimize the concentration of amine in the manufacturing environment because these phenomena become more serious when the concentration of environmental amine is more than 30ppb.
Some methods to overcome these phenomena have been described in the prior art; for example, (1) adding amine to the PR composition, (2) adding a"sweet" photoacid generator to the PR composition (See Frank Houlihan et al., Journal of Photopolymer Science and Technology, Vol. 11, No. 3,1998,419-430), and (3) improving the PR resin itself (See J. Byers et al., Journal of Photopolymer Science and Technology, Vol. 11, No. 3,1998,465-474). However, these methods require additional processes to control the concentration of amine in the environment, because they are only effective when the concentration of environmental amine is less than 5ppb, thereby resulting ; n a high manufacturing cost.
SUMMARY OF THE INVENTION An object of the present invention is to provide a photoresist composition that can provide a good photoresist pattern in the presence of a high concentration of amine.
BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 to Fig. 13 show photoresist patterns obtained from embodiments of the present invention.
Fig. 14 is a graph showing data that was obtained in Example 11.
DETAILED DESCRIPTION OF THE INVENTION The present invention provides a photoresist composition which comprises (i) a photoresist polymer, and (ii) a non-Newtonian organic solvent which imparts a shear thinning characteristic to the composition.
"Shear thinning characteristic"means that the viscosity of a material reduces when stress is applied to the material. A non-Newtonian solvent is one whose flow behavior departs from that of a Newtonian fluid, so that the rate of shear is not proportional to the corresponding stress.
Preferred non-Newtonian solvents comprise ketone solvents and ester solvents. The most preferred ketone solvents are selected from the group consisting of cyclohexanone, isobutyl methyl ketone, 2-heptanone, 3heptanone, 4-heptanone, cyclopentanone, 2methylcyclopentanone, 3-methylcyclopentanone, 2methylcyclohexanone, 3-methylcyclohexanone and 2,4dimethylpentanone; and the most preferred ester solvents are selected from the group consisting of ethyl lactate and 2-methoxyethyl lactate.
It is preferable to use a polymer comprising alicyclic units in its main chain as the photoresist polymer in the photoresist composition of the present invention; most preferably the polymer represented by following Chemical Formula 1 : < Chemical Formula 1 >
wherein a, b, c and d individually represent the polymerization ratio of each comonomer.
Sulfide or onium type compounds are preferably used as the photoacid generator. Suitable photoacid generators may be one or more compounds selected from the group consisting of diphenyl iodide hexafluorophosphate, diphenyl iodide hexafluoroarsenate, diphenyliodide hexafluoroantimonate, diphenyl pmethoxyphenyl triflate, diphenyl p-toluenyl triflate, diphenyl p-isobutylphenyl triflate, diphenyl p-tertbutylphenyl triflate, triphenylsulfonium hexafluorophosphate, triphenylsulfonium hexafluoroarsenate, triphenylsulfonium hexafluoroantimonate, triphenylsulfonium triflate and dibutylnaphthylsulfonium triflate.
In order to form a photoresist pattern using the photoresist composition of the present invention, the photoresist composition is spin-coated on a silicon wafer, and"soft-baked."Then, the photoresist is exposed to 1 to 30mJ/cm2 of light energy using exposure equipment with ArF, KrF, E-beam, EUV or X-ray radiation, and then"post-baked"at a temperature of about 90 C to 170 C for about 1 to 5 minutes. Then, the wafer is developed in a developing solution, for example aqueous TMAH (tetramethylammonium hydroxide) solution, to obtain a micro pattern, preferably of 0.19 Am or less.
The present inventors have found that changing the three-dimensional structure of the photoresist polymer molecules in the photoresist composition being coated may produce a coated photoresist layer having excellent stability to the post exposure delay effect.
Generally, there are many gaps among molecules when photoresist resins containing alicyclic units are coated on a wafer substrate to form the photoresist layer of a semiconductor device. These gaps make it easy to exhaust acids generated from photoresist layer by exposure and also allow the photoresist layer to be permeated by amines which react with and thereby remove the generated acids. It is impossible to form micro patterns if the post exposure delay effect occurs, since the generated acids are neutralized by environmental amines which permeate the photoresist layer. As a result, chemical amplification cannot be carried out by evaporation of acids when the photoresist layer is post-baked, i. e. baked at high temperature in order to diffuse acid before development.
The above problems can be solved by reducing the gaps among the polymer molecules in the PR layer by using specific organic solvents in the coated PR composition in accordance with the present invention.
Non-Newtonian organic solvents of the present invention impart shear thinning characteristics to the photoresist composition. It is believed that the abovementioned gaps among polymer molecules are reduced when the solvents of the present invention are used because the polymer molecules of a shear thinning solution are in rigid rod, oval or helix shapes. These shapes orient parallel to the shear direction and therefore are coated in a more tightly packed structure, thereby producing little or no gaps between molecules in the coated layer and providing good photoresist patterns even though when there is post exposure delay.
DETAILED DESCRIPTION OF PREFERRED EMBODIMENT The invention is described in more detail by referring to the Examples below, but it should be noted that the present invention is not restricted to the examples by any means.
In the following examples, the obtained patterns are compared with one another, with the only change being the solvent of the photoresist composition. The concentration of the environmental amines is kept at 30ppb in all the following examples.
Comparative Example 1 : Usina a Newtonian solvent (i) a resin of the above Chemical Formula 1, comprising only alicyclic units (lg), and (ii) triphenylsulfonium triflate (0.012g) as a photoacid generator were dissolved in (iii) propylene glycol methyl ether acetate (7g), a Newtonian solvent, to obtain a PR composition.
This composition was spin-coated on wafers pretreated with hexamethyldisilazane at room temperature (23 C) and baked at 150 C for 90 seconds.
After baking, 91 dies were exposed to light by using an ArF laser exposer, increasing the amount of exposing light for each successive die by 1 mJ/cm2 from 10 mJ/cm2 to 100 mJ/cm2. The dies were then baked again at 140 C for 90 seconds without post exposure delay.
When the baking was completed, the wafers were developed in 2.38 wt% aqueous tetramethylammonium hydroxide (TMAH) solution, but a pattern was not obtained, as shown in Fig. 1, since acids generated by exposure were removed by the amines existing in the exposer environment.
Comparative Example 2 : Using a Newtonian solvent (i) A resin of Chemical Formula 1 (lg), and (ii) triphenylsulfonium triflate (0.012g) as a photoacid generator were dissolved in (iii) ethyl 3-ethoxy propionate (6g), a Newtonian solvent, to obtain a PR composition.
The composition was spin-coated on wafers pretreated with hexamethyldisilazane at room temperature (23 C) and baked at 150 C for 90 seconds.
After baking, 91 dies were exposed to light by using an ArF laser exposer, increasing the amount of exposing light for each successive die by 1 mJ/cm2 from 10 mJ/cm2 to 100 mJ/cm2. The dies were then baked again at 140 C for 90 seconds without post exposure delay.
When the baking was completed, the wafers were developed in 2.38 wt% aqueous TMAH solution, but a pattern was not obtained, as shown in Fig. 2.
Invention Example 1 : Using non-Newtonian solvent (i) A resin of Chemical Formula I (lg), and (ii) triphenylsulfonium triflate (0.012g) as a photoacid generator were dissolved in (iii) ethyl lactate (6g), a non-Newtonian solvent, to obtain a PR composition.
The composition was spin-coated on wafers pretreated with hexamethyldisilazane at room temperature (23 C) and baked at 150 C for 90 seconds.
After baking, 91 dies were exposed to light by using an ArF laser exposer increasing the amount of exposing light for each successive die by 1 mJ/cm2 from 10 mJ/cm2 to 100 mJ/cm2. After a post exposure delay of 30 minutes, the wafers were baked again at 140 C for 90 seconds.
When the baking was completed, the wafers were was developed in 2.38 wt% aqueous TMAH solution to obtain a 0.14pm L/S pattern, as shown in Fig. 3.
Invention Example 2 : Using non-Newton, an solvent (i) A resin of Chemical Formula I (lg), and (ii) triphenylsulfonium triflate (0.012g) as a photoacid generator were dissolved in (iii) cyclohexanone (6g), a non-Newtonian solvent, to obtain a PR composition.
The composition was spin-coated on wafers pretreated with hexamethyldisilazane at room temperature (23 C) and baked at 150 C for 90 seconds.
After baking, 91 dies were exposed to light by using an ArF laser exposer increasing the amount of exposing light for each successive die by 1 mJ/cm2 from 10 mJ/cm2 to 100 mJ/cm2. After a post exposure delay of 30 minutes, the wafers were baked again at 140 C for 90 seconds.
When the baking was completed, the wafers were developed in 2.38 wt% aqueous TMAH solution to obtain a 0.13pm L/S pattern, as shown in Fig. 4.
Invention Example 3 : Using non-Newtonian solvent The procedure according to Invention Example 2 was repeated, but using 2-methoxyethyl acetate (6g) instead of cyclohexanone (6g) as the non-Newtonian solvent, to obtain a 0.13pm L/S pattern as shown in Fig. 5.
Invention Example 4 : Using non-Newtonian solvent The procedure according to Invention Example 2 was repeated, but using 2-heptanone (6g) instead of cyclohexanone (6g) as the non-Newtonian solvent, to obtain a 0.16pm L/S pattern as shown in Fig. 6.
Invention Example 5 : Using non-Newtonian solvent The procedure according to Invention Example 2 was repeated, but using the 3-heptanone (6g) instead of cyclohexanone (6g) as the non-Newtonian solvent, to obtain a 0.15Wn L/S pattern as shown in Fig. 7.
Invention Example 6 : Using non-Newtonian solvent The procedure according to Invention Example 2 was repeated, but using 4-heptanone (6g) instead of cyclohexanone (6g) as the non-Newtonian solvent, to obtain a 0.19im L/S pattern as shown in Fig. 8.
Invention Example 7 : Using non-Newtonian solvent The procedure according to Invention Example 2 was repeated, but using isobutyl methyl ketone (8g) instead of cyclohexanone (6g) as the non-Newtonian solvent, to obtain a 0.13pm L/S pattern as shown in Fig. 9.
Invention Example 8 : Using non-Newtonian solvent The procedure according to Invention Example 2 was repeated, but using a mixture of cyclohexanone (3g) and isobutyl methyl ketone (3g) instead of cyclohexanone (6g) as the non-Newtonian solvent, to obtain a 0.15zm L/S pattern as shown in Fig. 10.
Invention Example 9 : Using non-Newtonian solvent The procedure according to Invention Example 2 was repeated, but using a mixture of cyclohexanone (3g) and 2-heptanone (3g) instead of cyclohexanone (6g) as the non-Newtonian solvent, to obtain a 0.13pm L/S pattern as shown in Fig. 11.
Invention Example 10 : Using non-Newtonian solvent The procedure according to Invention Example 2 was repeated, but using a mixture of cyclohexanone (3g) and 2-methoxyethyl acetate (3g) instead of cyclohexanone (6g) as the non-Newtonian solvent to obtain a 0.14um L/S pattern as shown in Fig. 12.
ComparativeExample3:Using a Newtonian solvent and a sweet photoacid generator (i) A resin of Chemical Formula 1 (lg), (ii) triphenylsulfonium triflate (O. Olg) as a photoacid generator and (iii) a sweet photoacid generator of chemical formula 2 below (O. Olg) were dissolved in (iv) propylene glycol methyl ether acetate (7g), a Newtonian solvent, in an atmosphere having more than 30 ppb of amine to obtain a PR composition.
< Chemical Formula 2 >
The composition was spin-coated on wafers pretreated with hexamethyldisilazane at 23 C and baked at 150 C for 90 seconds. After baking, 91 dies were exposed to light by using an ArF laser exposer increasing the amount of exposing light for each successive die by 1 mJ/cm2 from 10 mJ/cm2 to 100 Mj/CMI.
The wafers were then baked again at 140 C for 90 seconds without post exposure delay.
When the baking was completed, the wafers were developed in 2.38 wt% aqueous TMAH solution, but a pattern was not obtained, as shown in Fig. 13.
As demonstrated in Comparative Examples 1, 2 and 3 above, patterns were not obtained when Newtonian solvents were used, even without a post exposure delay.
Particularly, in Comparative Example 3, a pattern was not obtained in the presence of a high concentration of amine, despite using a sweet photoacid generator.
On the other hand, good patterns were obtained even after post exposure delay, when non-Newtonian solvents of the present invention were used. Without being bound by theory, it is believed that the structure of PR polymer molecule is changed under shear to rigid rod, oval or helix shapes when the PR polymer is mixed with a non-Newtonian solvent, thereby allowing the polymer molecules to be closely packed together when coated and reducing the gaps among polymer molecules in the coated layer. The reduction of gaps significantly reduces the permeation of amines into the PR layer.
Invention Examples 1-10 demonstrate that it is more effective to use the non-Newtonian solvents of the present invention in the PR composition if the concentration of environmental amine is high during the photolithography process.
Additional ketone solvents such as 2methylcyclopentanone, 3-methylcyclopentanone, 2methylcyclohexanone, 3-methylcyclo hexanone and 2,4dimethylpentanone may be also be used instead of solvents used in Invention Examples 1-10 to provide a PR composition with stability to the post exposure delay effect in accordance with the present invention..
In the following Example 11, the viscosities of PR polymer solutions using different solvents were measured to examine in more detail why dissolving the PR polymer in the specific solvents of the present invention provide a PR composition which forms a PR layer stable to the post exposure delay effect.
Example n The viscosity of solutions comprising the resin of Chemical Formula 1 (lOg) dissolved in 40g of four solvents; respectively, (1) 2-heptanone, (2) isobutylmethyl ketone, (3) 2-methoxyethyl acetate and (4) propylene glycol methyl ether acetate, is measured at various shear rates. The shape of the resin molecule in the solvent can be guessed by comparing shear viscosity with shear rate (as shown in Fig. 14), because those solutions that exhibit shear-thinning characteristics are known to possess rigid rod, oval or helix shapes.
The results shown in Fig. 14 demonstrate that the propylene glycol methyl ether acetate solution, which is unstable to the post exposure delay effect, has the characteristics of Newtonian fluid in that its viscosity does not react to a change in shear rate.
On the other hand, the 2-heptanone, isobutylmethyl ketone and 2-methoxyethyl acetate solutions, which are stable to the post exposure delay effect, have the shear thinning characteristics of non-Newtonian fluid in that their viscosities change with a change in shear rate.
These results establish indirectly that the shape of the PR polymer molecule in the PR compositions of the present invention is rigid rod, oval or helix and correlates this shape to good photolithography patterns which are stable to the post exposure delay effect. By selecting a non-Newtonian solvent for the PR composition, the PR polymer takes on shape under shear conditions that reduces the gaps among the PR polymer molecules when coated as a PR layer, thereby inhibiting amines from penetrating into the coated PR layer.
Moreover, the present invention reduces the cost of the photolithography process since excellent PR patterns are obtained merely by selecting a specific solvent rather than by using an additional process.

Claims (17)

  1. WHAT CLAIMED IS : 1. A photoresist composition which comprises (i) a photoresist polymer and (ii) an organic solvent which imparts a shear thinning characteristic to the composition.
  2. 2. A photoresist composition according to claim 1 further comprising (iii) a photoacid generator to form a chemically amplified photoresist composition.
  3. 3. A photoresist composition according to claim 1 wherein the organic solvent is a non-Newtonian solvent.
  4. 4. A photoresist composition according to claim 3 wherein the non-Newtonian solvent is a ketone solvent or ester solvent
  5. 5. A photoresist composition according to claim 4 wherein the ketone solvent is selected from the group consisting of cyclohexanone, isobutyl methyl ketone, 2heptanone, 3-heptanone, 4-heptanone, cyclopentanone, 2methylcyclo pentanone, 3-methylcyclopentanone, 2methylcyclohexanone, 3-methylcyclohexanone and 2,4dimethylpentanone; and the ester solvent is ethyl lactate or 2-methoxyethyl lactate.
  6. 6. A photoresist composition according to claim 1 wherein the photoresist polymer comprises an alicyclic unit in its main chain.
  7. 7. A photoresist composition according to claim 6 wherein the photoresist polymer is a compound represented by following Chemical Formula 1.
    < Chemical Formula 1 >
    wherein a, b, c and d individually represent the polymerization ratio of each comonomer.
  8. 8. A process for forming a photoresist pattern which comprises the steps of (a) coating the photoresist composition of claim 1 on a wafer, (b) exposing the wafer to light by employing an exposer, and (c) developing the exposed wafer.
  9. 9. A process according to claim 8 wherein the light source has wave length below 250nm.
  10. 10. A process according to claim 8 wherein the exposing step (b) is carried out by using a light source selected from the group consisting of ArF (193nm), KrF (248nm), an E-beam, X-ray, an ion beam, EUV and DUV (deep ultra violet).
  11. 11. A process according to claim 8 wherein the developing step (c) is carried out by using an alkaline developing solution.
  12. 12. A process according to claim 11 wherein said alkaline developing solution is 0.01 to 5wt% aqueous TMAH solution.
  13. 13. A process according to claim 8 which further comprises baking step (s) before and/or after step (b).
  14. 14. A process according to claim 13 wherein the baking step (s) is carried out at 90-170 C for 1-5 minutes.
  15. 15. A process according to claim 13 wherein there is a post exposure delay between step (b) and the baking step.
  16. 16. A process according to claim 15 wherein the concentration of environmental amine is more than 30ppb during the post exposure delay.
  17. 17. A semiconductor element manufactured by the process according to claim 8.
GB0001959A 1999-02-19 2000-01-28 Photoresist in a non-Newtonian solvent Withdrawn GB2347429A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990005604A KR20000056355A (en) 1999-02-19 1999-02-19 Photoresist composition having superior characteristics in the presence of high concentration of amine

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GB0001959D0 GB0001959D0 (en) 2000-03-22
GB2347429A true GB2347429A (en) 2000-09-06

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JP (1) JP2000241964A (en)
KR (1) KR20000056355A (en)
CN (1) CN1264060A (en)
DE (1) DE10007429A1 (en)
FR (1) FR2790114A1 (en)
GB (1) GB2347429A (en)
IT (1) IT1319833B1 (en)
NL (1) NL1014417C2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692891B2 (en) * 2000-06-30 2004-02-17 Hynix Semiconductor Inc Photoresist composition containing photo radical generator with photoacid generator

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI366067B (en) 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
KR100713237B1 (en) * 2005-12-26 2007-05-02 제일모직주식회사 Hardmask composition coated under photoresist having good stock stability

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324804A (en) * 1992-04-29 1994-06-28 Ciba-Geigy Corporation Photoresist material based on polystyrenes
US5738975A (en) * 1993-12-28 1998-04-14 Nec Corporation Photosensitive resin and method for patterning by use of the same
GB2320718A (en) * 1996-12-31 1998-07-01 Hyundai Electronics Industries Co Ltd Bicycloalkene photoresist copolymers
GB2320717A (en) * 1996-12-31 1998-07-01 Hyundai Electronics Ind Copolymer for photoresist
GB2336846A (en) * 1998-04-30 1999-11-03 Hyundai Electronics Ind Polymer for photoresist
GB2336845A (en) * 1998-04-30 1999-11-03 Hyundai Electronics Ind Photoresist polymer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2320718A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Rubber compound
US2320717A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Terpene coating
JP3139088B2 (en) * 1991-04-26 2001-02-26 住友化学工業株式会社 Positive resist composition
KR950012148A (en) * 1993-10-28 1995-05-16 미우라 아끼라 Photoresist composition
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5879857A (en) * 1997-02-21 1999-03-09 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5876897A (en) * 1997-03-07 1999-03-02 Clariant Finance (Bvi) Limited Positive photoresists containing novel photoactive compounds
JP3819531B2 (en) * 1997-05-20 2006-09-13 富士通株式会社 Resist composition and resist pattern forming method
KR100557368B1 (en) * 1998-01-16 2006-03-10 제이에스알 가부시끼가이샤 Radiation Sensitive Resin Composition
KR19990081722A (en) * 1998-04-30 1999-11-15 김영환 Carboxyl group-containing alicyclic derivatives and preparation method thereof
KR100419028B1 (en) * 1998-05-13 2004-07-19 주식회사 하이닉스반도체 Oxabicyclo compounds useful as photoreactive monomer of photoresist polymer, preparation method thereof, photoresist polymer containing the same, and method for preparing photoresist micro-pattern using the same
KR100271420B1 (en) * 1998-09-23 2001-03-02 박찬구 Chemically Amplified Positive Photoresist Composition
KR100274119B1 (en) * 1998-10-08 2001-03-02 박찬구 Polymer for preparing radiation-sensitive resist and resist composition containing same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5324804A (en) * 1992-04-29 1994-06-28 Ciba-Geigy Corporation Photoresist material based on polystyrenes
US5738975A (en) * 1993-12-28 1998-04-14 Nec Corporation Photosensitive resin and method for patterning by use of the same
GB2320718A (en) * 1996-12-31 1998-07-01 Hyundai Electronics Industries Co Ltd Bicycloalkene photoresist copolymers
GB2320717A (en) * 1996-12-31 1998-07-01 Hyundai Electronics Ind Copolymer for photoresist
GB2336846A (en) * 1998-04-30 1999-11-03 Hyundai Electronics Ind Polymer for photoresist
GB2336845A (en) * 1998-04-30 1999-11-03 Hyundai Electronics Ind Photoresist polymer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6692891B2 (en) * 2000-06-30 2004-02-17 Hynix Semiconductor Inc Photoresist composition containing photo radical generator with photoacid generator

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NL1014417A1 (en) 2000-08-22
KR20000056355A (en) 2000-09-15
FR2790114A1 (en) 2000-08-25
JP2000241964A (en) 2000-09-08
NL1014417C2 (en) 2001-11-13
IT1319833B1 (en) 2003-11-03
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