NL1014417A1 - Photoresist composition with excellent resistance to the effect of a delay after exposure. - Google Patents

Photoresist composition with excellent resistance to the effect of a delay after exposure.

Info

Publication number
NL1014417A1
NL1014417A1 NL1014417A NL1014417A NL1014417A1 NL 1014417 A1 NL1014417 A1 NL 1014417A1 NL 1014417 A NL1014417 A NL 1014417A NL 1014417 A NL1014417 A NL 1014417A NL 1014417 A1 NL1014417 A1 NL 1014417A1
Authority
NL
Netherlands
Prior art keywords
exposure
delay
effect
photoresist composition
excellent resistance
Prior art date
Application number
NL1014417A
Other languages
Dutch (nl)
Other versions
NL1014417C2 (en
Inventor
Jae Chang Jung
Chi Hyeong Roh
Keun Kyu Kong
Ki Ho Baik
Geun Su Lee
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1014417A1 publication Critical patent/NL1014417A1/en
Application granted granted Critical
Publication of NL1014417C2 publication Critical patent/NL1014417C2/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
NL1014417A 1999-02-19 2000-02-18 Photoresist composition with excellent resistance to the effect of a delay after exposure. NL1014417C2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019990005604A KR20000056355A (en) 1999-02-19 1999-02-19 Photoresist composition having superior characteristics in the presence of high concentration of amine
KR19990005604 1999-02-19

Publications (2)

Publication Number Publication Date
NL1014417A1 true NL1014417A1 (en) 2000-08-22
NL1014417C2 NL1014417C2 (en) 2001-11-13

Family

ID=19574624

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1014417A NL1014417C2 (en) 1999-02-19 2000-02-18 Photoresist composition with excellent resistance to the effect of a delay after exposure.

Country Status (8)

Country Link
JP (1) JP2000241964A (en)
KR (1) KR20000056355A (en)
CN (1) CN1264060A (en)
DE (1) DE10007429A1 (en)
FR (1) FR2790114A1 (en)
GB (1) GB2347429A (en)
IT (1) IT1319833B1 (en)
NL (1) NL1014417C2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583095B1 (en) * 2000-06-30 2006-05-24 주식회사 하이닉스반도체 Photoresist composition containing photo radical generator with photo acid generator
TWI366067B (en) 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
KR100713237B1 (en) * 2005-12-26 2007-05-02 제일모직주식회사 Hardmask composition coated under photoresist having good stock stability

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2320718A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Rubber compound
US2320717A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Terpene coating
JP3139088B2 (en) * 1991-04-26 2001-02-26 住友化学工業株式会社 Positive resist composition
TW304235B (en) * 1992-04-29 1997-05-01 Ocg Microelectronic Materials
KR950012148A (en) * 1993-10-28 1995-05-16 미우라 아끼라 Photoresist composition
JP2715881B2 (en) * 1993-12-28 1998-02-18 日本電気株式会社 Photosensitive resin composition and pattern forming method
US5879857A (en) * 1997-02-21 1999-03-09 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100265597B1 (en) * 1996-12-30 2000-09-15 김영환 Arf photosensitive resin and manufacturing method thereof
KR100220953B1 (en) * 1996-12-31 1999-10-01 김영환 Arf photoresist substituted with amide or imide
US5876897A (en) * 1997-03-07 1999-03-02 Clariant Finance (Bvi) Limited Positive photoresists containing novel photoactive compounds
JP3819531B2 (en) * 1997-05-20 2006-09-13 富士通株式会社 Resist composition and resist pattern forming method
KR100557368B1 (en) * 1998-01-16 2006-03-10 제이에스알 가부시끼가이샤 Radiation Sensitive Resin Composition
KR100376984B1 (en) * 1998-04-30 2003-07-16 주식회사 하이닉스반도체 Photoresist polymer and method for forming micropattern by using the same
KR100376983B1 (en) * 1998-04-30 2003-08-02 주식회사 하이닉스반도체 Photoresist polymer and method for forming micropattern by using the same
KR19990081722A (en) * 1998-04-30 1999-11-15 김영환 Carboxyl group-containing alicyclic derivatives and preparation method thereof
KR100419028B1 (en) * 1998-05-13 2004-07-19 주식회사 하이닉스반도체 Oxabicyclo compounds useful as photoreactive monomer of photoresist polymer, preparation method thereof, photoresist polymer containing the same, and method for preparing photoresist micro-pattern using the same
KR100271420B1 (en) * 1998-09-23 2001-03-02 박찬구 Chemically Amplified Positive Photoresist Composition
KR100274119B1 (en) * 1998-10-08 2001-03-02 박찬구 Polymer for preparing radiation-sensitive resist and resist composition containing same

Also Published As

Publication number Publication date
ITTO20000137A1 (en) 2001-08-11
GB0001959D0 (en) 2000-03-22
GB2347429A (en) 2000-09-06
KR20000056355A (en) 2000-09-15
JP2000241964A (en) 2000-09-08
DE10007429A1 (en) 2000-11-23
NL1014417C2 (en) 2001-11-13
FR2790114A1 (en) 2000-08-25
CN1264060A (en) 2000-08-23
IT1319833B1 (en) 2003-11-03

Similar Documents

Publication Publication Date Title
DE60125929D1 (en) PHOTO-ACTIVE COATING COMPOSITION
CY2008018I1 (en) 6-MEPCAPTO-CYCLODEXTRIN DERIVATIVES: AGENTS TO REVERSE DRUG-INDUCED NEUROMUSICAL BLOCKAGE.
DE60014100D1 (en) PESTICIDE COMPOSITIONS WITH ROSEMARY OIL
ATE441404T1 (en) EXTENDED RELEASE ORAL DOSE COMPOSITION
DE60143178D1 (en) Photosensitive composition
IS2932B (en) Foulvestrant composition
DE60022162D1 (en) TOPICAL COMPOSITION WITH N-ACETYLGLUKOSAMINE
DE60223654D1 (en) RESIST COMPOSITION
ATE382673T1 (en) MULTI-LAYER LIQUID COMPOSITION
DE50113647D1 (en) IR-absorbing compositions
ITTO20000976A0 (en) ACARICIDE COMPOSITIONS.
DE60043447D1 (en) COMPOSITIONS WITH CONTROLLED RELEASE CONTAINING NIMESULID
DE60112317D1 (en) PESTICIDE COMPOSITION
DE60105523D1 (en) Anti-reflective coating composition
DE60111451D1 (en) Topcoat composition
DE60118381D1 (en) PRIMER COMPOSITION
FR2831433B1 (en) SOLID TOPICAL COMPOSITION
DE60103582D1 (en) Controlled Release Compositions
DE60037755D1 (en) HARDENING COMPOSITION
DE69943245D1 (en) GAS-CREATING COMPOSITION
DE60039274D1 (en) Negative resist composition
DE10193397T1 (en) Vulcanizing adhesive composition
DE60116858D1 (en) COMPOSITION
DE60123421D1 (en) LATEX COMPOSITIONS WITH REDUCED AGENCY
DE60114514D1 (en) coating composition

Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20010906

PD2B A search report has been drawn up
VD1 Lapsed due to non-payment of the annual fee

Effective date: 20080901