GB0001959D0 - Photoresist composition having excellent resistance to post exposure delay effect - Google Patents

Photoresist composition having excellent resistance to post exposure delay effect

Info

Publication number
GB0001959D0
GB0001959D0 GB0001959A GB0001959A GB0001959D0 GB 0001959 D0 GB0001959 D0 GB 0001959D0 GB 0001959 A GB0001959 A GB 0001959A GB 0001959 A GB0001959 A GB 0001959A GB 0001959 D0 GB0001959 D0 GB 0001959D0
Authority
GB
United Kingdom
Prior art keywords
photoresist composition
excellent resistance
post exposure
delay effect
exposure delay
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB0001959A
Other versions
GB2347429A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB0001959D0 publication Critical patent/GB0001959D0/en
Publication of GB2347429A publication Critical patent/GB2347429A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
GB0001959A 1999-02-19 2000-01-28 Photoresist in a non-Newtonian solvent Withdrawn GB2347429A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990005604A KR20000056355A (en) 1999-02-19 1999-02-19 Photoresist composition having superior characteristics in the presence of high concentration of amine

Publications (2)

Publication Number Publication Date
GB0001959D0 true GB0001959D0 (en) 2000-03-22
GB2347429A GB2347429A (en) 2000-09-06

Family

ID=19574624

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0001959A Withdrawn GB2347429A (en) 1999-02-19 2000-01-28 Photoresist in a non-Newtonian solvent

Country Status (8)

Country Link
JP (1) JP2000241964A (en)
KR (1) KR20000056355A (en)
CN (1) CN1264060A (en)
DE (1) DE10007429A1 (en)
FR (1) FR2790114A1 (en)
GB (1) GB2347429A (en)
IT (1) IT1319833B1 (en)
NL (1) NL1014417C2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583095B1 (en) * 2000-06-30 2006-05-24 주식회사 하이닉스반도체 Photoresist composition containing photo radical generator with photo acid generator
TWI366067B (en) 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
KR100713237B1 (en) * 2005-12-26 2007-05-02 제일모직주식회사 Hardmask composition coated under photoresist having good stock stability

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2320717A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Terpene coating
US2320718A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Rubber compound
JP3139088B2 (en) * 1991-04-26 2001-02-26 住友化学工業株式会社 Positive resist composition
TW304235B (en) * 1992-04-29 1997-05-01 Ocg Microelectronic Materials
KR950012148A (en) * 1993-10-28 1995-05-16 미우라 아끼라 Photoresist composition
JP2715881B2 (en) * 1993-12-28 1998-02-18 日本電気株式会社 Photosensitive resin composition and pattern forming method
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5879857A (en) * 1997-02-21 1999-03-09 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100265597B1 (en) * 1996-12-30 2000-09-15 김영환 Arf photosensitive resin and manufacturing method thereof
KR100220953B1 (en) * 1996-12-31 1999-10-01 김영환 Arf photoresist substituted with amide or imide
US5876897A (en) * 1997-03-07 1999-03-02 Clariant Finance (Bvi) Limited Positive photoresists containing novel photoactive compounds
JP3819531B2 (en) * 1997-05-20 2006-09-13 富士通株式会社 Resist composition and resist pattern forming method
KR100557368B1 (en) * 1998-01-16 2006-03-10 제이에스알 가부시끼가이샤 Radiation Sensitive Resin Composition
KR19990081722A (en) * 1998-04-30 1999-11-15 김영환 Carboxyl group-containing alicyclic derivatives and preparation method thereof
KR100376983B1 (en) * 1998-04-30 2003-08-02 주식회사 하이닉스반도체 Photoresist polymer and method for forming micropattern by using the same
KR100376984B1 (en) * 1998-04-30 2003-07-16 주식회사 하이닉스반도체 Photoresist polymer and method for forming micropattern by using the same
KR100419028B1 (en) * 1998-05-13 2004-07-19 주식회사 하이닉스반도체 Oxabicyclo compounds useful as photoreactive monomer of photoresist polymer, preparation method thereof, photoresist polymer containing the same, and method for preparing photoresist micro-pattern using the same
KR100271420B1 (en) * 1998-09-23 2001-03-02 박찬구 Chemically Amplified Positive Photoresist Composition
KR100274119B1 (en) * 1998-10-08 2001-03-02 박찬구 Polymer for preparing radiation-sensitive resist and resist composition containing same

Also Published As

Publication number Publication date
GB2347429A (en) 2000-09-06
NL1014417A1 (en) 2000-08-22
DE10007429A1 (en) 2000-11-23
ITTO20000137A1 (en) 2001-08-11
JP2000241964A (en) 2000-09-08
CN1264060A (en) 2000-08-23
KR20000056355A (en) 2000-09-15
IT1319833B1 (en) 2003-11-03
NL1014417C2 (en) 2001-11-13
FR2790114A1 (en) 2000-08-25

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)