IT1319833B1 - Composizione di fotoresist avente una eccellente resistenzaall'effetto di ritardo da post esposizione. - Google Patents
Composizione di fotoresist avente una eccellente resistenzaall'effetto di ritardo da post esposizione.Info
- Publication number
- IT1319833B1 IT1319833B1 ITTO20000137A IT1319833B1 IT 1319833 B1 IT1319833 B1 IT 1319833B1 IT TO20000137 A ITTO20000137 A IT TO20000137A IT 1319833 B1 IT1319833 B1 IT 1319833B1
- Authority
- IT
- Italy
- Prior art keywords
- photoresist
- composition
- excellent resistance
- post exposure
- delay effect
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990005604A KR20000056355A (ko) | 1999-02-19 | 1999-02-19 | 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물 |
Publications (2)
Publication Number | Publication Date |
---|---|
ITTO20000137A1 ITTO20000137A1 (it) | 2001-08-11 |
IT1319833B1 true IT1319833B1 (it) | 2003-11-03 |
Family
ID=19574624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT2000TO000137 IT1319833B1 (it) | 1999-02-19 | 2000-02-11 | Composizione di fotoresist avente una eccellente resistenzaall'effetto di ritardo da post esposizione. |
Country Status (8)
Country | Link |
---|---|
JP (1) | JP2000241964A (it) |
KR (1) | KR20000056355A (it) |
CN (1) | CN1264060A (it) |
DE (1) | DE10007429A1 (it) |
FR (1) | FR2790114A1 (it) |
GB (1) | GB2347429A (it) |
IT (1) | IT1319833B1 (it) |
NL (1) | NL1014417C2 (it) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100583095B1 (ko) * | 2000-06-30 | 2006-05-24 | 주식회사 하이닉스반도체 | 광산 발생제와 함께 광 라디칼 발생제(prg)를 포함하는포토레지스트 조성물 |
TWI366067B (en) | 2003-09-10 | 2012-06-11 | Fujifilm Corp | Photosensitive composition and pattern forming method using the same |
KR100713237B1 (ko) * | 2005-12-26 | 2007-05-02 | 제일모직주식회사 | 저장 안정성이 우수한 레지스트 하층막용 하드마스크조성물 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2320717A (en) * | 1940-04-13 | 1943-06-01 | Pennsylvania Ind Chemical Corp | Terpene coating |
US2320718A (en) * | 1940-04-13 | 1943-06-01 | Pennsylvania Ind Chemical Corp | Rubber compound |
JP3139088B2 (ja) * | 1991-04-26 | 2001-02-26 | 住友化学工業株式会社 | ポジ型レジスト組成物 |
TW304235B (it) * | 1992-04-29 | 1997-05-01 | Ocg Microelectronic Materials | |
KR950012148A (ko) * | 1993-10-28 | 1995-05-16 | 미우라 아끼라 | 포토레지스트 조성물 |
JP2715881B2 (ja) * | 1993-12-28 | 1998-02-18 | 日本電気株式会社 | 感光性樹脂組成物およびパターン形成方法 |
US5879857A (en) * | 1997-02-21 | 1999-03-09 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
US5843624A (en) * | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
KR100265597B1 (ko) * | 1996-12-30 | 2000-09-15 | 김영환 | Arf 감광막 수지 및 그 제조방법 |
KR100220953B1 (ko) * | 1996-12-31 | 1999-10-01 | 김영환 | 아미드 또는 이미드를 도입한 ArF 감광막 수지 |
US5876897A (en) * | 1997-03-07 | 1999-03-02 | Clariant Finance (Bvi) Limited | Positive photoresists containing novel photoactive compounds |
JP3819531B2 (ja) * | 1997-05-20 | 2006-09-13 | 富士通株式会社 | レジスト組成物及びレジストパターン形成方法 |
KR100557368B1 (ko) * | 1998-01-16 | 2006-03-10 | 제이에스알 가부시끼가이샤 | 감방사선성 수지 조성물 |
KR19990081722A (ko) * | 1998-04-30 | 1999-11-15 | 김영환 | 카르복실기 함유 지환족 유도체 및 그의 제조방법 |
KR100376983B1 (ko) * | 1998-04-30 | 2003-08-02 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
KR100376984B1 (ko) * | 1998-04-30 | 2003-07-16 | 주식회사 하이닉스반도체 | 포토레지스트중합체및이를이용한미세패턴의형성방법 |
KR100419028B1 (ko) * | 1998-05-13 | 2004-07-19 | 주식회사 하이닉스반도체 | 옥사비시클로화합물,이화합물이도입된포토레지스트중합체및이를이용한포토레지스트미세패턴의형성방법 |
KR100271420B1 (ko) * | 1998-09-23 | 2001-03-02 | 박찬구 | 화학증폭형 양성 포토레지스트 조성물 |
KR100274119B1 (ko) * | 1998-10-08 | 2001-03-02 | 박찬구 | 감방사선성 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물 |
-
1999
- 1999-02-19 KR KR1019990005604A patent/KR20000056355A/ko not_active Application Discontinuation
-
2000
- 2000-01-28 GB GB0001959A patent/GB2347429A/en not_active Withdrawn
- 2000-02-01 JP JP2000024182A patent/JP2000241964A/ja active Pending
- 2000-02-11 IT IT2000TO000137 patent/IT1319833B1/it active
- 2000-02-17 CN CN 00102769 patent/CN1264060A/zh active Pending
- 2000-02-18 FR FR0002044A patent/FR2790114A1/fr active Pending
- 2000-02-18 NL NL1014417A patent/NL1014417C2/nl not_active IP Right Cessation
- 2000-02-18 DE DE2000107429 patent/DE10007429A1/de not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
NL1014417C2 (nl) | 2001-11-13 |
FR2790114A1 (fr) | 2000-08-25 |
ITTO20000137A1 (it) | 2001-08-11 |
NL1014417A1 (nl) | 2000-08-22 |
DE10007429A1 (de) | 2000-11-23 |
JP2000241964A (ja) | 2000-09-08 |
KR20000056355A (ko) | 2000-09-15 |
GB0001959D0 (en) | 2000-03-22 |
CN1264060A (zh) | 2000-08-23 |
GB2347429A (en) | 2000-09-06 |
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