IT1319833B1 - Composizione di fotoresist avente una eccellente resistenzaall'effetto di ritardo da post esposizione. - Google Patents

Composizione di fotoresist avente una eccellente resistenzaall'effetto di ritardo da post esposizione.

Info

Publication number
IT1319833B1
IT1319833B1 ITTO20000137A IT1319833B1 IT 1319833 B1 IT1319833 B1 IT 1319833B1 IT TO20000137 A ITTO20000137 A IT TO20000137A IT 1319833 B1 IT1319833 B1 IT 1319833B1
Authority
IT
Italy
Prior art keywords
photoresist
composition
excellent resistance
post exposure
delay effect
Prior art date
Application number
Other languages
English (en)
Inventor
Jae Chang Jung
Geun Su Lee
Chi Hyeong Roh
Keun Kyu Kong
Ki Ho Baik
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of ITTO20000137A1 publication Critical patent/ITTO20000137A1/it
Application granted granted Critical
Publication of IT1319833B1 publication Critical patent/IT1319833B1/it

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
IT2000TO000137 1999-02-19 2000-02-11 Composizione di fotoresist avente una eccellente resistenzaall'effetto di ritardo da post esposizione. IT1319833B1 (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019990005604A KR20000056355A (ko) 1999-02-19 1999-02-19 고농도의 아민 존재하에서 우수한 특성을 갖는 포토레지스트 조성물

Publications (2)

Publication Number Publication Date
ITTO20000137A1 ITTO20000137A1 (it) 2001-08-11
IT1319833B1 true IT1319833B1 (it) 2003-11-03

Family

ID=19574624

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2000TO000137 IT1319833B1 (it) 1999-02-19 2000-02-11 Composizione di fotoresist avente una eccellente resistenzaall'effetto di ritardo da post esposizione.

Country Status (8)

Country Link
JP (1) JP2000241964A (it)
KR (1) KR20000056355A (it)
CN (1) CN1264060A (it)
DE (1) DE10007429A1 (it)
FR (1) FR2790114A1 (it)
GB (1) GB2347429A (it)
IT (1) IT1319833B1 (it)
NL (1) NL1014417C2 (it)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100583095B1 (ko) * 2000-06-30 2006-05-24 주식회사 하이닉스반도체 광산 발생제와 함께 광 라디칼 발생제(ｐｒｇ)를 포함하는포토레지스트 조성물
TWI366067B (en) 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
KR100713237B1 (ko) * 2005-12-26 2007-05-02 제일모직주식회사 저장 안정성이 우수한 레지스트 하층막용 하드마스크조성물

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2320717A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Terpene coating
US2320718A (en) * 1940-04-13 1943-06-01 Pennsylvania Ind Chemical Corp Rubber compound
JP3139088B2 (ja) * 1991-04-26 2001-02-26 住友化学工業株式会社 ポジ型レジスト組成物
TW304235B (it) * 1992-04-29 1997-05-01 Ocg Microelectronic Materials
KR950012148A (ko) * 1993-10-28 1995-05-16 미우라 아끼라 포토레지스트 조성물
JP2715881B2 (ja) * 1993-12-28 1998-02-18 日本電気株式会社 感光性樹脂組成物およびパターン形成方法
US5879857A (en) * 1997-02-21 1999-03-09 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US5843624A (en) * 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
KR100265597B1 (ko) * 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
KR100220953B1 (ko) * 1996-12-31 1999-10-01 김영환 아미드 또는 이미드를 도입한 ArF 감광막 수지
US5876897A (en) * 1997-03-07 1999-03-02 Clariant Finance (Bvi) Limited Positive photoresists containing novel photoactive compounds
JP3819531B2 (ja) * 1997-05-20 2006-09-13 富士通株式会社 レジスト組成物及びレジストパターン形成方法
KR100557368B1 (ko) * 1998-01-16 2006-03-10 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
KR19990081722A (ko) * 1998-04-30 1999-11-15 김영환 카르복실기 함유 지환족 유도체 및 그의 제조방법
KR100376983B1 (ko) * 1998-04-30 2003-08-02 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100376984B1 (ko) * 1998-04-30 2003-07-16 주식회사 하이닉스반도체 포토레지스트중합체및이를이용한미세패턴의형성방법
KR100419028B1 (ko) * 1998-05-13 2004-07-19 주식회사 하이닉스반도체 옥사비시클로화합물,이화합물이도입된포토레지스트중합체및이를이용한포토레지스트미세패턴의형성방법
KR100271420B1 (ko) * 1998-09-23 2001-03-02 박찬구 화학증폭형 양성 포토레지스트 조성물
KR100274119B1 (ko) * 1998-10-08 2001-03-02 박찬구 감방사선성 레지스트 제조용 중합체 및 이를 함유하는 레지스트조성물

Also Published As

Publication number Publication date
NL1014417C2 (nl) 2001-11-13
FR2790114A1 (fr) 2000-08-25
ITTO20000137A1 (it) 2001-08-11
NL1014417A1 (nl) 2000-08-22
DE10007429A1 (de) 2000-11-23
JP2000241964A (ja) 2000-09-08
KR20000056355A (ko) 2000-09-15
GB0001959D0 (en) 2000-03-22
CN1264060A (zh) 2000-08-23
GB2347429A (en) 2000-09-06

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