KR19990087868A - 반도체장치의제조방법및그구조,이방법에사용되는리드프레임 - Google Patents
반도체장치의제조방법및그구조,이방법에사용되는리드프레임 Download PDFInfo
- Publication number
- KR19990087868A KR19990087868A KR1019990007841A KR19990007841A KR19990087868A KR 19990087868 A KR19990087868 A KR 19990087868A KR 1019990007841 A KR1019990007841 A KR 1019990007841A KR 19990007841 A KR19990007841 A KR 19990007841A KR 19990087868 A KR19990087868 A KR 19990087868A
- Authority
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- South Korea
- Prior art keywords
- semiconductor device
- bond pad
- lead
- semiconductor element
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 225
- 238000000034 method Methods 0.000 title abstract description 24
- 229920005989 resin Polymers 0.000 claims abstract description 86
- 239000011347 resin Substances 0.000 claims abstract description 86
- 238000007789 sealing Methods 0.000 claims abstract description 68
- 238000004519 manufacturing process Methods 0.000 claims abstract description 54
- 230000017525 heat dissipation Effects 0.000 abstract description 11
- 229910000679 solder Inorganic materials 0.000 description 28
- 239000000463 material Substances 0.000 description 17
- 238000005520 cutting process Methods 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 230000000873 masking effect Effects 0.000 description 5
- 239000002390 adhesive tape Substances 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 239000013585 weight reducing agent Substances 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 241000272168 Laridae Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
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- 229920001187 thermosetting polymer Polymers 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- Engineering & Computer Science (AREA)
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- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Lead Frames For Integrated Circuits (AREA)
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Abstract
Description
Claims (3)
- 다이본드 패드 및 와이어본드 패드와, 이 다이본드 패드 상에 탑재된 반도체 소자와, 이 반도체 소자를 매립하는 밀봉수지로 이루어진 반도체 장치의 제조방법에 있어서,간격을 두어 서로 평행하게 종렬 배치된 복수의 리드를 동일 평면 내에 구비하는 리드 프레임을 준비하고,상기 리드 프레임의 적어도 한 개의 리드 표면에, 복수의 반도체 소자를 횡렬로 고정하여, 각 반도체 소자의 전극과, 종방향으로 인접하는 다른 리드를 각각 전기적으로 접속하고,상기 리드의 이면이 노출하도록, 이 리드의 표면 상으로부터 상기 복수의 반도체 소자를 일체로 매립하는 상기 밀봉수지를 충전하고,상기 리드 및 상기 밀봉수지를 상기 반도체 소자의 사이에서 종방향으로 절단하여, 상기 반도체 소자가 탑재된 해당 리드를 다이본드 패드로 하고, 이 반도체 소자의 전극과 접속된 해당 리드를 와이어본드 패드로 하는 것을 특징으로 하는 반도체 장치의 제조방법.
- 간격을 두어 서로 평행하게 종렬 배치된 복수의 리드를 동일 평면 내에 구비하는 것을 특징으로 하는 청구항 1 기재의 제조방법에 사용되는 리드 프레임.
- 반도체 소자를 상면에 탑재한 다이본드 패드와, 이 다이본드 패드를 사이에 끼워 평행하게 종렬 배치된 와이어본드 패드와, 이 반도체 소자를 매립하는 밀봉수지로 이루어진 반도체 장치에 있어서,상기 밀봉수지가, 상기 다이본드 패드와 상기 와이어본드 패드의 이면이 노출하도록, 이 다이본드 패드와 이 와이어본드 패드의 상면 위로부터 충전되고, 이 다이본드 패드와 이 와이어본드 패드의 측면 사이에도 충전되어 이루어진 것을 특징으로 하는 반도체 장치.
Priority Applications (1)
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KR1020020002925A KR100689726B1 (ko) | 1998-05-12 | 2002-01-18 | 반도체 장치 |
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JP128896 | 1998-05-12 | ||
JP12889698A JP3862410B2 (ja) | 1998-05-12 | 1998-05-12 | 半導体装置の製造方法及びその構造 |
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KR1020020002925A Division KR100689726B1 (ko) | 1998-05-12 | 2002-01-18 | 반도체 장치 |
Publications (2)
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KR19990087868A true KR19990087868A (ko) | 1999-12-27 |
KR100345621B1 KR100345621B1 (ko) | 2002-07-27 |
Family
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Application Number | Title | Priority Date | Filing Date |
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KR1019990007841A KR100345621B1 (ko) | 1998-05-12 | 1999-03-10 | 반도체 장치의 제조방법 및 그 방법에 사용되는 리드 프레임 |
KR1020020002925A KR100689726B1 (ko) | 1998-05-12 | 2002-01-18 | 반도체 장치 |
Family Applications After (1)
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KR1020020002925A KR100689726B1 (ko) | 1998-05-12 | 2002-01-18 | 반도체 장치 |
Country Status (4)
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US (2) | US6252306B1 (ko) |
JP (1) | JP3862410B2 (ko) |
KR (2) | KR100345621B1 (ko) |
TW (1) | TW409375B (ko) |
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JP2002110884A (ja) * | 2000-10-02 | 2002-04-12 | Nitto Denko Corp | リードフレーム積層物 |
US20070004092A1 (en) * | 2003-08-29 | 2007-01-04 | Hiromichi Suzuki | Semiconductor device manufacturing method |
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US7462317B2 (en) | 2004-11-10 | 2008-12-09 | Enpirion, Inc. | Method of manufacturing an encapsulated package for a magnetic device |
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US7688172B2 (en) * | 2005-10-05 | 2010-03-30 | Enpirion, Inc. | Magnetic device having a conductive clip |
US8701272B2 (en) | 2005-10-05 | 2014-04-22 | Enpirion, Inc. | Method of forming a power module with a magnetic device having a conductive clip |
US8139362B2 (en) * | 2005-10-05 | 2012-03-20 | Enpirion, Inc. | Power module with a magnetic device having a conductive clip |
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US8133529B2 (en) | 2007-09-10 | 2012-03-13 | Enpirion, Inc. | Method of forming a micromagnetic device |
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US7952459B2 (en) | 2007-09-10 | 2011-05-31 | Enpirion, Inc. | Micromagnetic device and method of forming the same |
US7920042B2 (en) | 2007-09-10 | 2011-04-05 | Enpirion, Inc. | Micromagnetic device and method of forming the same |
US8541991B2 (en) | 2008-04-16 | 2013-09-24 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
US9246390B2 (en) | 2008-04-16 | 2016-01-26 | Enpirion, Inc. | Power converter with controller operable in selected modes of operation |
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US8153473B2 (en) | 2008-10-02 | 2012-04-10 | Empirion, Inc. | Module having a stacked passive element and method of forming the same |
US8339802B2 (en) | 2008-10-02 | 2012-12-25 | Enpirion, Inc. | Module having a stacked magnetic device and semiconductor device and method of forming the same |
US8266793B2 (en) | 2008-10-02 | 2012-09-18 | Enpirion, Inc. | Module having a stacked magnetic device and semiconductor device and method of forming the same |
US9054086B2 (en) | 2008-10-02 | 2015-06-09 | Enpirion, Inc. | Module having a stacked passive element and method of forming the same |
US8698463B2 (en) | 2008-12-29 | 2014-04-15 | Enpirion, Inc. | Power converter with a dynamically configurable controller based on a power conversion mode |
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JP5549612B2 (ja) * | 2011-01-31 | 2014-07-16 | 三菱電機株式会社 | 半導体装置の製造方法 |
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US9509217B2 (en) | 2015-04-20 | 2016-11-29 | Altera Corporation | Asymmetric power flow controller for a power converter and method of operating the same |
JP6630390B2 (ja) * | 2018-03-29 | 2020-01-15 | アオイ電子株式会社 | 半導体装置 |
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1998
- 1998-05-12 JP JP12889698A patent/JP3862410B2/ja not_active Expired - Lifetime
-
1999
- 1999-01-21 US US09/234,321 patent/US6252306B1/en not_active Expired - Lifetime
- 1999-02-04 TW TW088101674A patent/TW409375B/zh not_active IP Right Cessation
- 1999-03-10 KR KR1019990007841A patent/KR100345621B1/ko not_active IP Right Cessation
-
2001
- 2001-04-09 US US09/828,132 patent/US6372546B2/en not_active Expired - Lifetime
-
2002
- 2002-01-18 KR KR1020020002925A patent/KR100689726B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US6252306B1 (en) | 2001-06-26 |
JP3862410B2 (ja) | 2006-12-27 |
KR100689726B1 (ko) | 2007-03-08 |
KR100345621B1 (ko) | 2002-07-27 |
TW409375B (en) | 2000-10-21 |
US20010041384A1 (en) | 2001-11-15 |
US6372546B2 (en) | 2002-04-16 |
KR20020033654A (ko) | 2002-05-07 |
JPH11330313A (ja) | 1999-11-30 |
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