KR19980080903A - 유지보수동안 진공을 보존하는 격리밸브를 가진 챔버 - Google Patents

유지보수동안 진공을 보존하는 격리밸브를 가진 챔버 Download PDF

Info

Publication number
KR19980080903A
KR19980080903A KR1019980011127A KR19980011127A KR19980080903A KR 19980080903 A KR19980080903 A KR 19980080903A KR 1019980011127 A KR1019980011127 A KR 1019980011127A KR 19980011127 A KR19980011127 A KR 19980011127A KR 19980080903 A KR19980080903 A KR 19980080903A
Authority
KR
South Korea
Prior art keywords
chamber
vacuum
valve
isolation valve
seal
Prior art date
Application number
KR1019980011127A
Other languages
English (en)
Korean (ko)
Inventor
로버트이. 데벤포트
Original Assignee
조셉제이.스위니
어플라이드머티어리얼스,인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 조셉제이.스위니, 어플라이드머티어리얼스,인코포레이티드 filed Critical 조셉제이.스위니
Publication of KR19980080903A publication Critical patent/KR19980080903A/ko

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04Pressure vessels, e.g. autoclaves
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Pressure Vessels And Lids Thereof (AREA)
  • Cold Air Circulating Systems And Constructional Details In Refrigerators (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
KR1019980011127A 1997-03-31 1998-03-31 유지보수동안 진공을 보존하는 격리밸브를 가진 챔버 KR19980080903A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/828,250 US6103069A (en) 1997-03-31 1997-03-31 Chamber design with isolation valve to preserve vacuum during maintenance
US8/828,250 1997-03-31

Publications (1)

Publication Number Publication Date
KR19980080903A true KR19980080903A (ko) 1998-11-25

Family

ID=25251275

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019980011127A KR19980080903A (ko) 1997-03-31 1998-03-31 유지보수동안 진공을 보존하는 격리밸브를 가진 챔버

Country Status (6)

Country Link
US (1) US6103069A (zh)
EP (1) EP0869199A1 (zh)
JP (1) JPH1150229A (zh)
KR (1) KR19980080903A (zh)
SG (1) SG54623A1 (zh)
TW (1) TW373242B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100530335B1 (ko) * 2003-12-24 2005-11-22 재단법인 포항산업과학연구원 플라즈마 멜트 스피너용 전극봉 연마 장치
KR100626791B1 (ko) * 2004-12-17 2006-09-25 두산메카텍 주식회사 진공장치용 히터

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG90171A1 (en) * 2000-09-26 2002-07-23 Inst Data Storage Sputtering device
AU2002230793A1 (en) * 2000-10-31 2002-05-15 Applied Materials, Inc. Method and apparatus for cleaning a deposition chamber
GB0127251D0 (en) * 2001-11-13 2002-01-02 Nordiko Ltd Apparatus
DE10215040B4 (de) * 2002-04-05 2019-02-21 Leybold Optics Gmbh Vorrichtung und Verfahren zum Be- und Entladen einer Vakuumkammer
JP4294976B2 (ja) * 2003-02-27 2009-07-15 東京エレクトロン株式会社 基板処理装置
US7300558B2 (en) * 2003-10-21 2007-11-27 Seagate Technology Llc Rapid cycle time gas burster
US20050092253A1 (en) * 2003-11-04 2005-05-05 Venkat Selvamanickam Tape-manufacturing system having extended operational capabilites
DE202004005216U1 (de) * 2004-03-15 2004-07-15 Applied Films Gmbh & Co. Kg Umsetzbares Wartungsventil
DE102004036170B4 (de) * 2004-07-26 2007-10-11 Schott Ag Vakuumbeschichtungsanlage und Verfahren zur Vakuumbeschichtung und deren Verwendung
US7780821B2 (en) * 2004-08-02 2010-08-24 Seagate Technology Llc Multi-chamber processing with simultaneous workpiece transport and gas delivery
JP4923450B2 (ja) * 2005-07-01 2012-04-25 富士ゼロックス株式会社 バッチ処理支援装置および方法、プログラム
US20070012663A1 (en) * 2005-07-13 2007-01-18 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US20070084720A1 (en) * 2005-07-13 2007-04-19 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012558A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Magnetron sputtering system for large-area substrates
US20070012559A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Method of improving magnetron sputtering of large-area substrates using a removable anode
DE102005037822A1 (de) * 2005-08-08 2007-02-15 Systec System- Und Anlagentechnik Gmbh & Co.Kg Vakuumbeschichtung mit Kondensatentfernung
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US20070056850A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US7588668B2 (en) 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
DE102005056324A1 (de) * 2005-11-25 2007-06-06 Aixtron Ag CVD-Reaktor mit auswechselbarer Prozesskammerdecke
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20120152727A1 (en) * 2010-11-24 2012-06-21 Applied Materials, Inc. Alkali Metal Deposition System
CN102945788B (zh) * 2011-08-16 2015-04-15 北京北方微电子基地设备工艺研究中心有限责任公司 遮蔽装置及具有其的半导体处理设备
CN103031514B (zh) * 2011-09-30 2015-09-02 北京北方微电子基地设备工艺研究中心有限责任公司 遮蔽装置、具有其的pvd设备及pvd设备的控制方法
JP5787793B2 (ja) * 2012-03-05 2015-09-30 株式会社東芝 イオン源
WO2016040547A1 (en) * 2014-09-11 2016-03-17 Massachusetts Institute Of Technology Processing system for small substrates
BE1022682B1 (nl) * 2015-01-11 2016-07-14 Soleras Advanced Coatings Bvba Een deksel met een sensorsysteem voor een configureerbaar meetsysteem voor een configureerbaar sputtersysteem
EP3091561B1 (en) * 2015-05-06 2019-09-04 safematic GmbH Sputter unit
CN105047521B (zh) * 2015-09-21 2017-05-17 北京凯尔科技发展有限公司 一种保持质谱内部真空条件下更换离子源的质谱仪
US11802340B2 (en) * 2016-12-12 2023-10-31 Applied Materials, Inc. UHV in-situ cryo-cool chamber
JP7061896B2 (ja) * 2018-03-02 2022-05-02 株式会社日立製作所 粒子線治療システムおよび粒子線治療システムの設備更新方法
US20200194234A1 (en) * 2018-12-17 2020-06-18 Lam Research Corporation Vacuum chamber opening system
KR102229688B1 (ko) * 2019-02-13 2021-03-18 프리시스 주식회사 밸브모듈 및 이를 포함하는 기판처리장치
TWI762230B (zh) * 2021-03-08 2022-04-21 天虹科技股份有限公司 遮擋機構及具有遮擋機構的基板處理腔室
US11933416B2 (en) 2021-07-16 2024-03-19 Changxin Memory Technologies, Inc. Gate valve device, cleaning method and mechanical apparatus
CN115621110A (zh) * 2021-07-16 2023-01-17 长鑫存储技术有限公司 一种门阀装置、清洁方法和机械设备

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3206322A (en) * 1960-10-31 1965-09-14 Morgan John Robert Vacuum deposition means and methods for manufacture of electronic components
US3641973A (en) * 1970-11-25 1972-02-15 Air Reduction Vacuum coating apparatus
US3921572A (en) * 1974-02-25 1975-11-25 Ibm Vacuum coating apparatus
DE2940064A1 (de) * 1979-10-03 1981-04-16 Leybold-Heraeus GmbH, 5000 Köln Vakuumaufdampfanlage mir einer ventilkammer, einer bedampfungskammer und einer verdampferkammer
US4294678A (en) * 1979-11-28 1981-10-13 Coulter Systems Corporation Apparatus and method for preventing contamination of sputtering targets
US4519885A (en) * 1983-12-27 1985-05-28 Shatterproof Glass Corp. Method and apparatus for changing sputtering targets in a magnetron sputtering system
JPS60262969A (ja) * 1984-06-11 1985-12-26 Tdk Corp スパツタタ−ゲツト装置
JP2859632B2 (ja) * 1988-04-14 1999-02-17 キヤノン株式会社 成膜装置及び成膜方法
IT1232241B (it) * 1989-09-11 1992-01-28 Cetev Cent Tecnolog Vuoto Dispositivo per il caricamento veloce di substrati in impianti da vuoto
JPH0733576B2 (ja) * 1989-11-29 1995-04-12 株式会社日立製作所 スパツタ装置、及びターゲツト交換装置、並びにその交換方法
DE4040856A1 (de) * 1990-12-20 1992-06-25 Leybold Ag Zerstaeubungsanlage
US5223112A (en) * 1991-04-30 1993-06-29 Applied Materials, Inc. Removable shutter apparatus for a semiconductor process chamber
DE4313353C2 (de) * 1993-04-23 1997-08-28 Leybold Ag Vakuum-Beschichtungsanlage
US5380414A (en) * 1993-06-11 1995-01-10 Applied Materials, Inc. Shield and collimator pasting deposition chamber with a wafer support periodically used as an acceptor
DE4408947C2 (de) * 1994-03-16 1997-03-13 Balzers Hochvakuum Vakuumbehandlungsanlage
JPH07335552A (ja) * 1994-06-08 1995-12-22 Tel Varian Ltd 処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100530335B1 (ko) * 2003-12-24 2005-11-22 재단법인 포항산업과학연구원 플라즈마 멜트 스피너용 전극봉 연마 장치
KR100626791B1 (ko) * 2004-12-17 2006-09-25 두산메카텍 주식회사 진공장치용 히터

Also Published As

Publication number Publication date
EP0869199A1 (en) 1998-10-07
JPH1150229A (ja) 1999-02-23
TW373242B (en) 1999-11-01
SG54623A1 (en) 1998-11-16
US6103069A (en) 2000-08-15

Similar Documents

Publication Publication Date Title
KR19980080903A (ko) 유지보수동안 진공을 보존하는 격리밸브를 가진 챔버
US5730801A (en) Compartnetalized substrate processing chamber
KR102599502B1 (ko) 측면 저장 포드들, 장비 전단부 모듈들, 및 기판들을 처리하기 위한 방법들
US5217053A (en) Vented vacuum semiconductor wafer cassette
KR100783120B1 (ko) 양날개형 슬롯밸브 및 그 설치방법
KR200491849Y1 (ko) 슬릿 밸브 도어들을 구비한 로드 락 챔버
US5697750A (en) Controlled environment enclosure and mechanical interface
KR101867125B1 (ko) 게이트 밸브 및 기판 처리 장치
US6429139B1 (en) Serial wafer handling mechanism
KR100666894B1 (ko) 게이트밸브 및 진공 게이트밸브
US6347919B1 (en) Wafer processing chamber having separable upper and lower halves
JPH0774227A (ja) マイクロ環境下のロードロック
JPH07183355A (ja) ロードロックインターフェース用の包囲体
KR20010021746A (ko) 진공 처리 장치용 두 부품의 슬릿 밸브 삽입부재
US20030129044A1 (en) Erosion resistant slit valve
JP7467541B2 (ja) タンデム処理領域を有するプラズマチャンバ
JP4306798B2 (ja) 基板キャリアおよびロードロック用ドア駆動装置
KR20010007475A (ko) 용기 및 용기 밀봉 방법
KR100850815B1 (ko) 처리 장치
US20210111050A1 (en) Substrate processing device
WO2016179479A1 (en) Apparatus for selectively sealing a gas feedthrough
JPH05140743A (ja) 真空処理装置
KR20210011548A (ko) 기판 처리 장치 및 방법

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid