TW373242B - Chamber design with isolation valve to preserve vacuum during maintenance - Google Patents

Chamber design with isolation valve to preserve vacuum during maintenance

Info

Publication number
TW373242B
TW373242B TW087104734A TW87104734A TW373242B TW 373242 B TW373242 B TW 373242B TW 087104734 A TW087104734 A TW 087104734A TW 87104734 A TW87104734 A TW 87104734A TW 373242 B TW373242 B TW 373242B
Authority
TW
Taiwan
Prior art keywords
chamber
isolation valve
during maintenance
vacuum
vacuum during
Prior art date
Application number
TW087104734A
Other languages
English (en)
Inventor
Robert E Davenport
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW373242B publication Critical patent/TW373242B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/04—Pressure vessels, e.g. autoclaves
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Pressure Vessels And Lids Thereof (AREA)
  • Cold Air Circulating Systems And Constructional Details In Refrigerators (AREA)
TW087104734A 1997-03-31 1998-03-30 Chamber design with isolation valve to preserve vacuum during maintenance TW373242B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/828,250 US6103069A (en) 1997-03-31 1997-03-31 Chamber design with isolation valve to preserve vacuum during maintenance

Publications (1)

Publication Number Publication Date
TW373242B true TW373242B (en) 1999-11-01

Family

ID=25251275

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087104734A TW373242B (en) 1997-03-31 1998-03-30 Chamber design with isolation valve to preserve vacuum during maintenance

Country Status (6)

Country Link
US (1) US6103069A (zh)
EP (1) EP0869199A1 (zh)
JP (1) JPH1150229A (zh)
KR (1) KR19980080903A (zh)
SG (1) SG54623A1 (zh)
TW (1) TW373242B (zh)

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JP4294976B2 (ja) * 2003-02-27 2009-07-15 東京エレクトロン株式会社 基板処理装置
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US20050092253A1 (en) * 2003-11-04 2005-05-05 Venkat Selvamanickam Tape-manufacturing system having extended operational capabilites
KR100530335B1 (ko) * 2003-12-24 2005-11-22 재단법인 포항산업과학연구원 플라즈마 멜트 스피너용 전극봉 연마 장치
DE202004005216U1 (de) * 2004-03-15 2004-07-15 Applied Films Gmbh & Co. Kg Umsetzbares Wartungsventil
DE102004036170B4 (de) * 2004-07-26 2007-10-11 Schott Ag Vakuumbeschichtungsanlage und Verfahren zur Vakuumbeschichtung und deren Verwendung
US7780821B2 (en) * 2004-08-02 2010-08-24 Seagate Technology Llc Multi-chamber processing with simultaneous workpiece transport and gas delivery
KR100626791B1 (ko) * 2004-12-17 2006-09-25 두산메카텍 주식회사 진공장치용 히터
JP4923450B2 (ja) * 2005-07-01 2012-04-25 富士ゼロックス株式会社 バッチ処理支援装置および方法、プログラム
US20070084720A1 (en) * 2005-07-13 2007-04-19 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012558A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Magnetron sputtering system for large-area substrates
US8617672B2 (en) 2005-07-13 2013-12-31 Applied Materials, Inc. Localized surface annealing of components for substrate processing chambers
US20070012663A1 (en) * 2005-07-13 2007-01-18 Akihiro Hosokawa Magnetron sputtering system for large-area substrates having removable anodes
US20070012559A1 (en) * 2005-07-13 2007-01-18 Applied Materials, Inc. Method of improving magnetron sputtering of large-area substrates using a removable anode
DE102005037822A1 (de) * 2005-08-08 2007-02-15 Systec System- Und Anlagentechnik Gmbh & Co.Kg Vakuumbeschichtung mit Kondensatentfernung
US20070051616A1 (en) * 2005-09-07 2007-03-08 Le Hienminh H Multizone magnetron assembly
US20070056850A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Large-area magnetron sputtering chamber with individually controlled sputtering zones
US20070056843A1 (en) * 2005-09-13 2007-03-15 Applied Materials, Inc. Method of processing a substrate using a large-area magnetron sputtering chamber with individually controlled sputtering zones
US7588668B2 (en) 2005-09-13 2009-09-15 Applied Materials, Inc. Thermally conductive dielectric bonding of sputtering targets using diamond powder filler or thermally conductive ceramic fillers
DE102005056324A1 (de) * 2005-11-25 2007-06-06 Aixtron Ag CVD-Reaktor mit auswechselbarer Prozesskammerdecke
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US7942969B2 (en) 2007-05-30 2011-05-17 Applied Materials, Inc. Substrate cleaning chamber and components
US20120152727A1 (en) * 2010-11-24 2012-06-21 Applied Materials, Inc. Alkali Metal Deposition System
CN102945788B (zh) * 2011-08-16 2015-04-15 北京北方微电子基地设备工艺研究中心有限责任公司 遮蔽装置及具有其的半导体处理设备
CN103031514B (zh) * 2011-09-30 2015-09-02 北京北方微电子基地设备工艺研究中心有限责任公司 遮蔽装置、具有其的pvd设备及pvd设备的控制方法
JP5787793B2 (ja) * 2012-03-05 2015-09-30 株式会社東芝 イオン源
WO2016040547A1 (en) * 2014-09-11 2016-03-17 Massachusetts Institute Of Technology Processing system for small substrates
BE1022682B1 (nl) * 2015-01-11 2016-07-14 Soleras Advanced Coatings Bvba Een deksel met een sensorsysteem voor een configureerbaar meetsysteem voor een configureerbaar sputtersysteem
EP3091561B1 (en) * 2015-05-06 2019-09-04 safematic GmbH Sputter unit
CN105047521B (zh) * 2015-09-21 2017-05-17 北京凯尔科技发展有限公司 一种保持质谱内部真空条件下更换离子源的质谱仪
US11802340B2 (en) * 2016-12-12 2023-10-31 Applied Materials, Inc. UHV in-situ cryo-cool chamber
JP7061896B2 (ja) 2018-03-02 2022-05-02 株式会社日立製作所 粒子線治療システムおよび粒子線治療システムの設備更新方法
US20200194234A1 (en) * 2018-12-17 2020-06-18 Lam Research Corporation Vacuum chamber opening system
KR102229688B1 (ko) * 2019-02-13 2021-03-18 프리시스 주식회사 밸브모듈 및 이를 포함하는 기판처리장치
TWI762230B (zh) * 2021-03-08 2022-04-21 天虹科技股份有限公司 遮擋機構及具有遮擋機構的基板處理腔室
US11933416B2 (en) 2021-07-16 2024-03-19 Changxin Memory Technologies, Inc. Gate valve device, cleaning method and mechanical apparatus
CN115621110A (zh) * 2021-07-16 2023-01-17 长鑫存储技术有限公司 一种门阀装置、清洁方法和机械设备

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Also Published As

Publication number Publication date
US6103069A (en) 2000-08-15
EP0869199A1 (en) 1998-10-07
JPH1150229A (ja) 1999-02-23
KR19980080903A (ko) 1998-11-25
SG54623A1 (en) 1998-11-16

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