KR102752184B1 - 고해상도 전자 패터닝을 위한 스티치리스(stitchless) 직접 이미징 - Google Patents

고해상도 전자 패터닝을 위한 스티치리스(stitchless) 직접 이미징 Download PDF

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KR102752184B1
KR102752184B1 KR1020247033018A KR20247033018A KR102752184B1 KR 102752184 B1 KR102752184 B1 KR 102752184B1 KR 1020247033018 A KR1020247033018 A KR 1020247033018A KR 20247033018 A KR20247033018 A KR 20247033018A KR 102752184 B1 KR102752184 B1 KR 102752184B1
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direct
scans
write
substrate
scan
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KR20240149983A (ko
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슈테펜 뤼커
슈테판 하이네만
베르너 에쉬케
아브라함 그로스
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오르보테크 엘티디.
레이저 이미징 시스템스 게엠베하
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Facsimile Scanning Arrangements (AREA)
  • Optical Recording Or Reproduction (AREA)
KR1020247033018A 2015-11-03 2016-11-02 고해상도 전자 패터닝을 위한 스티치리스(stitchless) 직접 이미징 Active KR102752184B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562249971P 2015-11-03 2015-11-03
US62/249,971 2015-11-03
PCT/IL2016/051183 WO2017077532A1 (en) 2015-11-03 2016-11-02 Stitchless direct imaging for high resolution electronic patterning
KR1020187014105A KR20180078265A (ko) 2015-11-03 2016-11-02 고해상도 전자 패터닝을 위한 스티치리스(stitchless) 직접 이미징

Related Parent Applications (1)

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KR1020187014105A Division KR20180078265A (ko) 2015-11-03 2016-11-02 고해상도 전자 패터닝을 위한 스티치리스(stitchless) 직접 이미징

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KR20240149983A KR20240149983A (ko) 2024-10-15
KR102752184B1 true KR102752184B1 (ko) 2025-01-09

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KR1020247033018A Active KR102752184B1 (ko) 2015-11-03 2016-11-02 고해상도 전자 패터닝을 위한 스티치리스(stitchless) 직접 이미징
KR1020187014105A Ceased KR20180078265A (ko) 2015-11-03 2016-11-02 고해상도 전자 패터닝을 위한 스티치리스(stitchless) 직접 이미징

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Country Status (7)

Country Link
US (1) US10429742B2 (enExample)
EP (1) EP3371639B1 (enExample)
JP (1) JP6863980B2 (enExample)
KR (2) KR102752184B1 (enExample)
CN (1) CN108351510B (enExample)
TW (1) TWI753865B (enExample)
WO (1) WO2017077532A1 (enExample)

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DE102017123686A1 (de) * 2017-10-11 2019-04-11 Miva Technologies Gmbh Verfahren und Belichtungseinrichtung zur Belichtung von zumindest einer gespeicherten Darstellung auf einem lichtempfindlichen Aufzeichnungsträger
CN112204707B (zh) 2018-05-31 2024-07-23 应用材料公司 数字光刻系统的多基板处理
TWI809201B (zh) * 2018-10-23 2023-07-21 以色列商奧寶科技有限公司 用於校正晶粒放置錯誤之適應性路由
CN109491212A (zh) * 2018-11-02 2019-03-19 深圳市先地图像科技有限公司 一种激光器多点线性机械扫描成像的装置及其使用方法
US11762300B2 (en) 2019-03-11 2023-09-19 Mycronic AB Method and device for processing print data and for printing according to such print data
CN113378665B (zh) 2019-11-27 2024-11-15 奥特斯科技(重庆)有限公司 处理部件承载件的方法及光学检查设备和计算机可读介质
EP4043142B1 (en) 2021-02-12 2024-08-07 Valstybinis Moksliniu Tyrimu Institutas Fiziniu Ir Technologijos Mokslu Centras Method for batch processing of 3d objects using laser treatment and a system implementing the method
CN118119893A (zh) * 2021-05-25 2024-05-31 应用材料公司 用于提高数字光刻精确度的网桥加固构件
EP4628460A1 (en) * 2024-04-05 2025-10-08 Stealthcase OY A production unit for fabricating electromagnetically functional markings on transparent articles

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US20090268184A1 (en) 2008-04-25 2009-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. System and Method for Direct Writing to a Wafer
US20130120724A1 (en) 2011-05-18 2013-05-16 Mapper Lithography Ip B.V. Method for splitting a pattern for use in a multi-beamlet lithography apparatus

Also Published As

Publication number Publication date
WO2017077532A1 (en) 2017-05-11
CN108351510A (zh) 2018-07-31
US20180321595A1 (en) 2018-11-08
EP3371639A4 (en) 2019-07-03
TW201723905A (zh) 2017-07-01
JP2018536190A (ja) 2018-12-06
EP3371639A1 (en) 2018-09-12
KR20180078265A (ko) 2018-07-09
EP3371639B1 (en) 2022-09-28
KR20240149983A (ko) 2024-10-15
CN108351510B (zh) 2021-02-19
JP6863980B2 (ja) 2021-04-21
US10429742B2 (en) 2019-10-01
TWI753865B (zh) 2022-02-01

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