CN108351510B - 用于高分辨率电子图案化的无缝线直接成像 - Google Patents

用于高分辨率电子图案化的无缝线直接成像 Download PDF

Info

Publication number
CN108351510B
CN108351510B CN201680064283.3A CN201680064283A CN108351510B CN 108351510 B CN108351510 B CN 108351510B CN 201680064283 A CN201680064283 A CN 201680064283A CN 108351510 B CN108351510 B CN 108351510B
Authority
CN
China
Prior art keywords
scans
substrate
write
direct
data
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680064283.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN108351510A (zh
Inventor
S.吕克尔
S.海内曼
W.埃施克
A.格罗斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laser Imaging Systems Co ltd
Laser Imaging Systems GmbH
Orbotech Ltd
Original Assignee
Laser Imaging Systems Co ltd
Laser Imaging Systems GmbH
Orbotech Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laser Imaging Systems Co ltd, Laser Imaging Systems GmbH, Orbotech Ltd filed Critical Laser Imaging Systems Co ltd
Publication of CN108351510A publication Critical patent/CN108351510A/zh
Application granted granted Critical
Publication of CN108351510B publication Critical patent/CN108351510B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70008—Production of exposure light, i.e. light sources
    • G03F7/70025—Production of exposure light, i.e. light sources by lasers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70525—Controlling normal operating mode, e.g. matching different apparatus, remote control or prediction of failure

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Facsimile Scanning Arrangements (AREA)
  • Optical Recording Or Reproduction (AREA)
CN201680064283.3A 2015-11-03 2016-11-02 用于高分辨率电子图案化的无缝线直接成像 Active CN108351510B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562249971P 2015-11-03 2015-11-03
US62/249,971 2015-11-03
PCT/IL2016/051183 WO2017077532A1 (en) 2015-11-03 2016-11-02 Stitchless direct imaging for high resolution electronic patterning

Publications (2)

Publication Number Publication Date
CN108351510A CN108351510A (zh) 2018-07-31
CN108351510B true CN108351510B (zh) 2021-02-19

Family

ID=58661716

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680064283.3A Active CN108351510B (zh) 2015-11-03 2016-11-02 用于高分辨率电子图案化的无缝线直接成像

Country Status (7)

Country Link
US (1) US10429742B2 (enExample)
EP (1) EP3371639B1 (enExample)
JP (1) JP6863980B2 (enExample)
KR (2) KR102752184B1 (enExample)
CN (1) CN108351510B (enExample)
TW (1) TWI753865B (enExample)
WO (1) WO2017077532A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102017123686A1 (de) * 2017-10-11 2019-04-11 Miva Technologies Gmbh Verfahren und Belichtungseinrichtung zur Belichtung von zumindest einer gespeicherten Darstellung auf einem lichtempfindlichen Aufzeichnungsträger
CN112204707B (zh) 2018-05-31 2024-07-23 应用材料公司 数字光刻系统的多基板处理
TWI809201B (zh) * 2018-10-23 2023-07-21 以色列商奧寶科技有限公司 用於校正晶粒放置錯誤之適應性路由
CN109491212A (zh) * 2018-11-02 2019-03-19 深圳市先地图像科技有限公司 一种激光器多点线性机械扫描成像的装置及其使用方法
US11762300B2 (en) 2019-03-11 2023-09-19 Mycronic AB Method and device for processing print data and for printing according to such print data
CN113378665B (zh) 2019-11-27 2024-11-15 奥特斯科技(重庆)有限公司 处理部件承载件的方法及光学检查设备和计算机可读介质
EP4043142B1 (en) 2021-02-12 2024-08-07 Valstybinis Moksliniu Tyrimu Institutas Fiziniu Ir Technologijos Mokslu Centras Method for batch processing of 3d objects using laser treatment and a system implementing the method
CN118119893A (zh) * 2021-05-25 2024-05-31 应用材料公司 用于提高数字光刻精确度的网桥加固构件
EP4628460A1 (en) * 2024-04-05 2025-10-08 Stealthcase OY A production unit for fabricating electromagnetically functional markings on transparent articles

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1766740A (zh) * 2004-10-28 2006-05-03 Asml荷兰有限公司 光学位置确定设备及方法
CN101300656A (zh) * 2005-09-15 2008-11-05 迈普尔平版印刷Ip有限公司 光刻系统、传感器和测量方法
CN101566802A (zh) * 2008-04-25 2009-10-28 台湾积体电路制造股份有限公司 用于直写晶片的系统和方法
CN101900669A (zh) * 2009-04-24 2010-12-01 霍夫曼-拉罗奇有限公司 用于光学扫描对象的方法和设备

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6059732A (ja) * 1983-09-13 1985-04-06 Toshiba Corp 電子ビ−ム描画法
US4924257A (en) * 1988-10-05 1990-05-08 Kantilal Jain Scan and repeat high resolution projection lithography system
JP3014380B2 (ja) * 1998-01-09 2000-02-28 インターナショナル・ビジネス・マシーンズ・コーポレイション 複数の可変成形電子ビ―ムを使用してパタ―ンを直接書き込むシステムおよび方法
US6149856A (en) * 1998-11-13 2000-11-21 Anvik Corporation Ultraviolet-based, large-area scanning system for photothermal processing of composite structures
JP2004087715A (ja) * 2002-08-26 2004-03-18 Semiconductor Leading Edge Technologies Inc 電子ビーム露光方法、半導体装置、露光パターンデータ処理方法およびプログラム
US20050105071A1 (en) * 2003-06-03 2005-05-19 Fusao Ishii Methods for patterning substrates having arbitrary and unexpected dimensional changes
JP4532200B2 (ja) * 2004-08-10 2010-08-25 株式会社オーク製作所 描画装置
JP2007071629A (ja) * 2005-09-06 2007-03-22 Advanced Mask Inspection Technology Kk 試料検査装置の支援装置、試料検査方法及びプログラム
US7570796B2 (en) * 2005-11-18 2009-08-04 Kla-Tencor Technologies Corp. Methods and systems for utilizing design data in combination with inspection data
US7936445B2 (en) * 2006-06-19 2011-05-03 Asml Netherlands B.V. Altering pattern data based on measured optical element characteristics
US20080241486A1 (en) * 2007-03-30 2008-10-02 Seiji Ishikawa Liquid Crystal Display Device with Evaluation Patterns Disposed Thereon, and Method for Manufacturing the Same
US8440375B2 (en) * 2007-05-29 2013-05-14 Nikon Corporation Exposure method and electronic device manufacturing method
JP2009049161A (ja) * 2007-08-20 2009-03-05 Fujitsu Microelectronics Ltd ショット分割繋ぎ位置選択方法及びショット分割露光システム
JP2010251580A (ja) * 2009-04-17 2010-11-04 Toshiba Corp 半導体装置の製造方法及び露光装置
TWI448830B (zh) * 2010-02-09 2014-08-11 Asml Netherlands Bv 微影裝置及元件製造方法
JP5703069B2 (ja) * 2010-09-30 2015-04-15 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
JP5760292B2 (ja) * 2011-02-28 2015-08-05 株式会社ブイ・テクノロジー マイクロレンズアレイを使用した露光装置
TW201303524A (zh) * 2011-05-18 2013-01-16 Mapper Lithography Ip Bv 用於多子束微影設備的分裂圖案的方法
JP5875904B2 (ja) * 2012-03-13 2016-03-02 株式会社Ｓｃｒｅｅｎホールディングス 描画装置および描画方法
JP2015022192A (ja) * 2013-07-19 2015-02-02 株式会社ニューフレアテクノロジー 検査装置
JP2016535299A (ja) * 2013-10-22 2016-11-10 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ ウェブベース処理用のマスクレスリソグラフィ
CN106415193B (zh) * 2014-03-21 2019-08-09 卡尔佩迪姆技术有限公司 用于在柔性基板上制造微型结构的系统和方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1766740A (zh) * 2004-10-28 2006-05-03 Asml荷兰有限公司 光学位置确定设备及方法
CN101300656A (zh) * 2005-09-15 2008-11-05 迈普尔平版印刷Ip有限公司 光刻系统、传感器和测量方法
CN101566802A (zh) * 2008-04-25 2009-10-28 台湾积体电路制造股份有限公司 用于直写晶片的系统和方法
CN101900669A (zh) * 2009-04-24 2010-12-01 霍夫曼-拉罗奇有限公司 用于光学扫描对象的方法和设备

Also Published As

Publication number Publication date
WO2017077532A1 (en) 2017-05-11
CN108351510A (zh) 2018-07-31
KR102752184B1 (ko) 2025-01-09
US20180321595A1 (en) 2018-11-08
EP3371639A4 (en) 2019-07-03
TW201723905A (zh) 2017-07-01
JP2018536190A (ja) 2018-12-06
EP3371639A1 (en) 2018-09-12
KR20180078265A (ko) 2018-07-09
EP3371639B1 (en) 2022-09-28
KR20240149983A (ko) 2024-10-15
JP6863980B2 (ja) 2021-04-21
US10429742B2 (en) 2019-10-01
TWI753865B (zh) 2022-02-01

Similar Documents

Publication Publication Date Title
CN108351510B (zh) 用于高分辨率电子图案化的无缝线直接成像
KR101872538B1 (ko) 복수의 층에 대해 정렬 최적화를 하기 위한 방법 및 장치
US20080112609A1 (en) Position detecting method and device, patterning device, and subject to be detected
TWI734111B (zh) 標記位置檢測裝置、描繪裝置以及標記位置檢測方法
TWI492792B (zh) Substrate manufacturing method and substrate manufacturing apparatus
KR101274534B1 (ko) 묘화 데이터 취득 방법 및 장치, 그리고 묘화 방법 및 장치
JP2006251160A (ja) 描画方法および装置
KR20080059415A (ko) 묘화 장치 및 화상 데이터의 작성 방법
JP7521988B2 (ja) 基板位置検出方法、描画方法、基板位置検出装置および描画装置
JP7461240B2 (ja) 位置検出装置、描画システムおよび位置検出方法
KR102731212B1 (ko) 묘화 장치, 묘화 방법, 적층 기판의 제조 방법 및 기록 매체에 기록된 프로그램
WO2016005965A1 (en) Improved systems and methods for computerized direct writing
JP7685395B2 (ja) 描画装置、描画方法およびプログラム
CN105992997A (zh) 图案描画装置用的gui装置、图案描画系统、作业单更新方法以及程序
JP2023032759A (ja) 描画システム、描画方法およびプログラム
KR20250018044A (ko) 기판의 얼라이먼트 방법
CN117745770A (zh) 模板生成装置、描绘系统、模板生成方法以及存储介质
CN116940884A (zh) 修正装置
JP2023141514A (ja) 描画データ生成装置、描画システムおよび描画データ生成方法
JP2006108424A (ja) 露光方法
JPH10162145A (ja) パターンマッチング法における登録パターンの中心座標データの補正データを演算する演算装置及びそれを用いるレーザ描画装置
JP2007079383A (ja) 描画データ取得方法および装置並びに描画方法および装置
JP2007232677A (ja) 測定位置指定方法およびこれを実行する寸法計測装置
JP2007286528A (ja) 描画データ取得方法および装置
JP2007122470A (ja) パターンレイアウト方法、その装置およびそのプログラム

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
CB02 Change of applicant information

Address after: Israel javne

Applicant after: ORBOTECH Ltd.

Applicant after: Laser Imaging Systems Co., Ltd

Address before: Israel javne

Applicant before: ORBOTECH Ltd.

Applicant before: LASER IMAGING SYSTEMS GmbH

CB02 Change of applicant information
GR01 Patent grant
GR01 Patent grant