KR102706325B1 - 산소 빈자리를 불소 처리하는 igzo 부동화 방법 - Google Patents

산소 빈자리를 불소 처리하는 igzo 부동화 방법 Download PDF

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KR102706325B1
KR102706325B1 KR1020187023363A KR20187023363A KR102706325B1 KR 102706325 B1 KR102706325 B1 KR 102706325B1 KR 1020187023363 A KR1020187023363 A KR 1020187023363A KR 20187023363 A KR20187023363 A KR 20187023363A KR 102706325 B1 KR102706325 B1 KR 102706325B1
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metal oxide
layer
fluorine
oxide layer
oxide semiconductor
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KR20180095115A (ko
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하오-치엔 슈
동길 임
태경 원
쑤에나 장
원호 성
로드니 순렁 림
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어플라이드 머티어리얼스, 인코포레이티드
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  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
KR1020187023363A 2016-01-14 2017-01-10 산소 빈자리를 불소 처리하는 igzo 부동화 방법 Active KR102706325B1 (ko)

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Application Number Priority Date Filing Date Title
US201662278955P 2016-01-14 2016-01-14
US62/278,955 2016-01-14
US15/359,325 2016-11-22
US15/359,325 US10134878B2 (en) 2016-01-14 2016-11-22 Oxygen vacancy of IGZO passivation by fluorine treatment
PCT/US2017/012872 WO2017123552A1 (en) 2016-01-14 2017-01-10 Oxygen vacancy of igzo passivation by fluorine treatment

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KR20180095115A KR20180095115A (ko) 2018-08-24
KR102706325B1 true KR102706325B1 (ko) 2024-09-12

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US (1) US10134878B2 (enExample)
JP (2) JP6916186B2 (enExample)
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WO (1) WO2017123552A1 (enExample)

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CN114203556B (zh) * 2021-12-08 2023-05-23 中山大学 一种用于调控氧化镓半导体表层电导的方法及半导体晶圆
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JP2021182630A (ja) 2021-11-25
JP6916186B2 (ja) 2021-08-11
US20170207327A1 (en) 2017-07-20
KR20180095115A (ko) 2018-08-24
JP2019508883A (ja) 2019-03-28
WO2017123552A1 (en) 2017-07-20
US10134878B2 (en) 2018-11-20
CN108475620A (zh) 2018-08-31
JP7260599B2 (ja) 2023-04-18
CN108475620B (zh) 2023-04-04

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