KR102706325B1 - 산소 빈자리를 불소 처리하는 igzo 부동화 방법 - Google Patents

산소 빈자리를 불소 처리하는 igzo 부동화 방법 Download PDF

Info

Publication number
KR102706325B1
KR102706325B1 KR1020187023363A KR20187023363A KR102706325B1 KR 102706325 B1 KR102706325 B1 KR 102706325B1 KR 1020187023363 A KR1020187023363 A KR 1020187023363A KR 20187023363 A KR20187023363 A KR 20187023363A KR 102706325 B1 KR102706325 B1 KR 102706325B1
Authority
KR
South Korea
Prior art keywords
metal oxide
layer
fluorine
oxide layer
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020187023363A
Other languages
English (en)
Korean (ko)
Other versions
KR20180095115A (ko
Inventor
하오-치엔 슈
동길 임
태경 원
쑤에나 장
원호 성
로드니 순렁 림
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20180095115A publication Critical patent/KR20180095115A/ko
Application granted granted Critical
Publication of KR102706325B1 publication Critical patent/KR102706325B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L29/41733—
    • H01L29/4908—
    • H01L29/66742—
    • H01L29/786—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
KR1020187023363A 2016-01-14 2017-01-10 산소 빈자리를 불소 처리하는 igzo 부동화 방법 Active KR102706325B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662278955P 2016-01-14 2016-01-14
US62/278,955 2016-01-14
US15/359,325 2016-11-22
US15/359,325 US10134878B2 (en) 2016-01-14 2016-11-22 Oxygen vacancy of IGZO passivation by fluorine treatment
PCT/US2017/012872 WO2017123552A1 (en) 2016-01-14 2017-01-10 Oxygen vacancy of igzo passivation by fluorine treatment

Publications (2)

Publication Number Publication Date
KR20180095115A KR20180095115A (ko) 2018-08-24
KR102706325B1 true KR102706325B1 (ko) 2024-09-12

Family

ID=59311423

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187023363A Active KR102706325B1 (ko) 2016-01-14 2017-01-10 산소 빈자리를 불소 처리하는 igzo 부동화 방법

Country Status (5)

Country Link
US (1) US10134878B2 (enExample)
JP (2) JP6916186B2 (enExample)
KR (1) KR102706325B1 (enExample)
CN (1) CN108475620B (enExample)
WO (1) WO2017123552A1 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10224432B2 (en) * 2017-03-10 2019-03-05 Applied Materials, Inc. Surface treatment process performed on devices for TFT applications
CN108281509B (zh) * 2018-01-30 2020-03-17 电子科技大学 氧化物半导体基光电探测器及提高其性能的方法
JP7153499B2 (ja) * 2018-08-08 2022-10-14 東京エレクトロン株式会社 酸素含有被処理体の処理方法及び処理装置
KR102760140B1 (ko) 2019-02-11 2025-01-24 삼성디스플레이 주식회사 표시 장치
KR102885296B1 (ko) 2019-08-30 2025-11-12 삼성디스플레이 주식회사 표시 장치
GB201913533D0 (en) 2019-09-19 2019-11-06 Univ Southampton Optical thin films and fabrication thereof
US11430898B2 (en) 2020-03-13 2022-08-30 Applied Materials, Inc. Oxygen vacancy of amorphous indium gallium zinc oxide passivation by silicon ion treatment
KR102752707B1 (ko) 2020-05-29 2025-01-13 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
TWI750902B (zh) * 2020-11-18 2021-12-21 友達光電股份有限公司 薄膜電晶體及其形成方法
CN113764282B (zh) * 2021-09-03 2023-09-05 深圳市华星光电半导体显示技术有限公司 一种背沟道蚀刻型的薄膜电晶体及其制作方法
CN114093889A (zh) * 2021-11-02 2022-02-25 Tcl华星光电技术有限公司 阵列基板及制备方法和显示面板
CN114203556B (zh) * 2021-12-08 2023-05-23 中山大学 一种用于调控氧化镓半导体表层电导的方法及半导体晶圆
CN115188827B (zh) * 2021-12-09 2025-05-30 友达光电股份有限公司 半导体装置及其制造方法
CN114551608A (zh) * 2022-03-09 2022-05-27 浙江理工大学 一种等离子处理氧化镓基日盲紫外探测器及其制备方法
KR20250145032A (ko) * 2023-02-10 2025-10-13 램 리써치 코포레이션 할로겐화된 유전체 산화물의 증착에서 평탄대 전압의 제어

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5650655A (en) 1994-04-28 1997-07-22 Micron Technology, Inc. Integrated circuitry having electrical interconnects
US5874745A (en) 1997-08-05 1999-02-23 International Business Machines Corporation Thin film transistor with carbonaceous gate dielectric
US6379574B1 (en) * 1999-05-03 2002-04-30 Applied Materials, Inc. Integrated post-etch treatment for a dielectric etch process
JP5590886B2 (ja) 2006-09-26 2014-09-17 アプライド マテリアルズ インコーポレイテッド 欠陥パシベーションのための高ｋゲート積層構造に対するフッ素プラズマ処理
US8143093B2 (en) * 2008-03-20 2012-03-27 Applied Materials, Inc. Process to make metal oxide thin film transistor array with etch stopping layer
US8642380B2 (en) * 2010-07-02 2014-02-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
KR20140002616A (ko) 2010-08-20 2014-01-08 어플라이드 머티어리얼스, 인코포레이티드 수소 미함유 실리콘 함유 유전체막을 형성하기 위한 방법들
WO2012083220A2 (en) * 2010-12-16 2012-06-21 The Regents Of The University Of California Generation of highly n-type, defect passivated transition metal oxides using plasma fluorine insertion
JP6004308B2 (ja) 2011-08-12 2016-10-05 Ｎｌｔテクノロジー株式会社 薄膜デバイス
TWI522490B (zh) 2012-05-10 2016-02-21 應用材料股份有限公司 利用微波電漿化學氣相沈積在基板上沈積膜的方法
US8735305B2 (en) 2012-05-24 2014-05-27 Intermolecular, Inc. Methods of forming fluorinated hafnium oxide gate dielectrics by atomic layer deposition
US20140091379A1 (en) * 2012-10-01 2014-04-03 Applied Materials, Inc. Fluorocarbon coating having low refractive index
WO2014133722A1 (en) 2013-03-01 2014-09-04 Applied Materials, Inc. Metal oxide tft stability improvement
US20140273342A1 (en) * 2013-03-13 2014-09-18 Applied Materials, Inc. Vth control method of multiple active layer metal oxide semiconductor tft
US20150140836A1 (en) * 2013-11-18 2015-05-21 Intermolecular, Inc. Methods to Control SiO2 Etching During Fluorine Doping of Si/SiO2 Interface
JP6263721B2 (ja) 2014-06-20 2018-01-24 株式会社Ｊｏｌｅｄ 薄膜トランジスタ、薄膜トランジスタの製造方法及び有機ｅｌ表示装置
US10008611B2 (en) 2014-06-26 2018-06-26 Joled Inc. Thin film transistor and organic EL display device
US20160155849A1 (en) * 2014-12-02 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, method for manufacturing semiconductor device, module, and electronic device
KR20160137843A (ko) * 2015-05-22 2016-12-01 엘지디스플레이 주식회사 고신뢰성 금속 산화물 반도체 물질을 포함하는 박막 트랜지스터 기판
CN105572990B (zh) * 2015-12-21 2019-07-12 武汉华星光电技术有限公司 阵列基板及其制造方法、液晶显示面板

Also Published As

Publication number Publication date
JP6916186B2 (ja) 2021-08-11
US20170207327A1 (en) 2017-07-20
JP7260599B2 (ja) 2023-04-18
KR20180095115A (ko) 2018-08-24
CN108475620A (zh) 2018-08-31
JP2021182630A (ja) 2021-11-25
JP2019508883A (ja) 2019-03-28
US10134878B2 (en) 2018-11-20
WO2017123552A1 (en) 2017-07-20
CN108475620B (zh) 2023-04-04

Similar Documents

Publication Publication Date Title
KR102706325B1 (ko) 산소 빈자리를 불소 처리하는 igzo 부동화 방법
KR100932815B1 (ko) 저온 폴리-실리콘 박막 트랜지스터를 위한 다층 고품질게이트 유전체
KR101979931B1 (ko) PECVD SiO2 패시베이션을 사용한 IGZO 및 ZNO TFT 제조 방법
JP5718052B2 (ja) 薄膜半導体材料を用いる薄膜トランジスタ
TWI435943B (zh) 薄膜金屬氮氧化半導體
KR102717556B1 (ko) 액정 디스플레이를 위한 높은 커패시턴스의 커패시터를 위한 계면 엔지니어링
KR20100017429A (ko) 질소 가스를 사용한 아연 타겟의 반응성 스퍼터링을 통해서 생성된 박막 반도체 재료
US10224432B2 (en) Surface treatment process performed on devices for TFT applications
US8840763B2 (en) Methods for stable process in a reactive sputtering process using zinc or doped zinc target
TW201431083A (zh) 薄膜半導體裝置
US10170569B2 (en) Thin film transistor fabrication utlizing an interface layer on a metal electrode layer
US11430898B2 (en) Oxygen vacancy of amorphous indium gallium zinc oxide passivation by silicon ion treatment
CN115735268B (zh) 通过电感耦合等离子体进行溅射成膜的成膜装置
KR102446402B1 (ko) 플라즈마 유발 손상을 감소시키기 위한 프로세스
KR102900424B1 (ko) 유도결합플라즈마에 의해 스퍼터링 성막을 수행하는 성막장치

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20180813

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20220106

Comment text: Request for Examination of Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20231103

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20240617

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20240909

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20240909

End annual number: 3

Start annual number: 1

PG1601 Publication of registration