JP6916186B2 - フッ素処理によるｉｇｚｏパッシベーションの酸素空孔 - Google Patents

フッ素処理によるｉｇｚｏパッシベーションの酸素空孔 Download PDF

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JP6916186B2
JP6916186B2 JP2018536291A JP2018536291A JP6916186B2 JP 6916186 B2 JP6916186 B2 JP 6916186B2 JP 2018536291 A JP2018536291 A JP 2018536291A JP 2018536291 A JP2018536291 A JP 2018536291A JP 6916186 B2 JP6916186 B2 JP 6916186B2
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metal oxide
fluorine
semiconductor layer
layer
oxide layer
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JP2019508883A (ja
JP2019508883A5 (enExample
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ハオ−チェン シュー，
ハオ−チェン シュー，
ドンギル イム，
ドンギル イム，
テギョン ウォン，
テギョン ウォン，
シュエナ チャン，
シュエナ チャン，
ウォンホ ソン，
ウォンホ ソン，
ロドニー シュンロン リム，
ロドニー シュンロン リム，
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Applied Materials Inc
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Applied Materials Inc
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    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
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    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
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    • H10D64/01332—Making the insulator
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  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Formation Of Insulating Films (AREA)
JP2018536291A 2016-01-14 2017-01-10 フッ素処理によるｉｇｚｏパッシベーションの酸素空孔 Active JP6916186B2 (ja)

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US201662278955P 2016-01-14 2016-01-14
US62/278,955 2016-01-14
US15/359,325 2016-11-22
US15/359,325 US10134878B2 (en) 2016-01-14 2016-11-22 Oxygen vacancy of IGZO passivation by fluorine treatment
PCT/US2017/012872 WO2017123552A1 (en) 2016-01-14 2017-01-10 Oxygen vacancy of igzo passivation by fluorine treatment

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JP2021182630A (ja) 2021-11-25
US20170207327A1 (en) 2017-07-20
KR20180095115A (ko) 2018-08-24
JP2019508883A (ja) 2019-03-28
WO2017123552A1 (en) 2017-07-20
US10134878B2 (en) 2018-11-20
CN108475620A (zh) 2018-08-31
JP7260599B2 (ja) 2023-04-18
KR102706325B1 (ko) 2024-09-12
CN108475620B (zh) 2023-04-04

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