CN108475620B - 通过氟处理进行的igzo钝化的氧空位 - Google Patents

通过氟处理进行的igzo钝化的氧空位 Download PDF

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CN108475620B
CN108475620B CN201780006372.7A CN201780006372A CN108475620B CN 108475620 B CN108475620 B CN 108475620B CN 201780006372 A CN201780006372 A CN 201780006372A CN 108475620 B CN108475620 B CN 108475620B
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metal oxide
fluorine
layer
oxide semiconductor
semiconductor layer
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CN108475620A (zh
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徐豪键
任东吉
元泰景
张雪娜
元镐成
罗德尼·顺隆·利马
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Applied Materials Inc
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CN201780006372.7A 2016-01-14 2017-01-10 通过氟处理进行的igzo钝化的氧空位 Active CN108475620B (zh)

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US201662278955P 2016-01-14 2016-01-14
US62/278,955 2016-01-14
US15/359,325 2016-11-22
US15/359,325 US10134878B2 (en) 2016-01-14 2016-11-22 Oxygen vacancy of IGZO passivation by fluorine treatment
PCT/US2017/012872 WO2017123552A1 (en) 2016-01-14 2017-01-10 Oxygen vacancy of igzo passivation by fluorine treatment

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KR102752707B1 (ko) 2020-05-29 2025-01-13 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
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CN113764282B (zh) * 2021-09-03 2023-09-05 深圳市华星光电半导体显示技术有限公司 一种背沟道蚀刻型的薄膜电晶体及其制作方法
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WO2012083220A2 (en) * 2010-12-16 2012-06-21 The Regents Of The University Of California Generation of highly n-type, defect passivated transition metal oxides using plasma fluorine insertion

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US10134878B2 (en) 2018-11-20
JP2019508883A (ja) 2019-03-28
JP2021182630A (ja) 2021-11-25
WO2017123552A1 (en) 2017-07-20
JP7260599B2 (ja) 2023-04-18
US20170207327A1 (en) 2017-07-20
JP6916186B2 (ja) 2021-08-11
KR102706325B1 (ko) 2024-09-12
KR20180095115A (ko) 2018-08-24
CN108475620A (zh) 2018-08-31

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