JP2021182630A - フッ素処理によるigzoパッシベーションの酸素空孔 - Google Patents
フッ素処理によるigzoパッシベーションの酸素空孔 Download PDFInfo
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- JP2021182630A JP2021182630A JP2021117139A JP2021117139A JP2021182630A JP 2021182630 A JP2021182630 A JP 2021182630A JP 2021117139 A JP2021117139 A JP 2021117139A JP 2021117139 A JP2021117139 A JP 2021117139A JP 2021182630 A JP2021182630 A JP 2021182630A
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- metal oxide
- oxide layer
- fluorine
- layer
- plasma
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- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 title claims abstract description 111
- 239000011737 fluorine Substances 0.000 title claims abstract description 79
- 229910052731 fluorine Inorganic materials 0.000 title claims abstract description 79
- 229910052760 oxygen Inorganic materials 0.000 title abstract description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title abstract description 29
- 239000001301 oxygen Substances 0.000 title abstract description 29
- 238000002161 passivation Methods 0.000 title description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 186
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 186
- 238000000034 method Methods 0.000 claims abstract description 61
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- 239000000758 substrate Substances 0.000 claims description 71
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- 238000000137 annealing Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000011229 interlayer Substances 0.000 claims description 6
- 239000007789 gas Substances 0.000 abstract description 95
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 230000000368 destabilizing effect Effects 0.000 abstract 1
- 210000002381 plasma Anatomy 0.000 description 74
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000005240 physical vapour deposition Methods 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 230000008021 deposition Effects 0.000 description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 8
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- -1 polyethylene terephthalate Polymers 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
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- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
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- 229910052733 gallium Inorganic materials 0.000 description 2
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000033001 locomotion Effects 0.000 description 2
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- 229910052750 molybdenum Inorganic materials 0.000 description 2
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910016909 AlxOy Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
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- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
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- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
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- 238000004299 exfoliation Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
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Abstract
Description
また、本願は以下に記載する態様を含む。
(態様1)
基板の上にゲート電極を形成することと、
前記ゲート電極の上にゲート誘電体層を堆積することと、
前記ゲート誘電体層の上に金属酸化物層を堆積することと、
第1のフッ素ラジカルを用いて前記金属酸化物層を処理することと、
前記金属酸化物層の上に導電層を堆積することと
を含む方法。
(態様2)
前記第1のフッ素ラジカルが、第1の遠隔プラズマ内で生成される、態様1に記載の方法。
(態様3)
前記第1のフッ素ラジカルが、前記金属酸化物層が配置されたチャンバの内部で点火された第1のプラズマ内で生成される、態様1に記載の方法。
(態様4)
前記第1のフッ素ラジカルを用いて前記金属酸化物層を処理する前に、前記金属酸化物層をアニールすることをさらに含む、態様1に記載の方法。
(態様5)
前記第1のフッ素ラジカルを用いて前記金属酸化物層を処理した後に、前記金属酸化物層をアニールすることをさらに含む、態様1に記載の方法。
(態様6)
前記金属酸化物層をアニールした後に、第2のフッ素ラジカルを用いて前記金属酸化物層を処理することをさらに含み、前記第2のフッ素ラジカルが、第2の遠隔プラズマ内で生成される、態様5に記載の方法。
(態様7)
前記金属酸化物層をアニールした後に、第2のフッ素ラジカルを用いて前記金属酸化物層を処理することをさらに含み、前記第2のフッ素ラジカルが、前記金属酸化物層が配置されたチャンバの内部で点火された第2のプラズマ内で生成される、態様5に記載の方法。
(態様8)
基板の上に金属酸化物層を堆積することと、
第1のフッ素ラジカル又は第1のフッ素含有ガスを用いて前記金属酸化物層を処理することと、
前記金属酸化物層にゲート誘電体層を堆積することと、
前記金属酸化物層の上に層間誘電体層を堆積することと、
前記層間誘電体層に金属層を堆積することと
を含む方法。
(態様9)
前記第1のフッ素ラジカルが、第1の遠隔プラズマ内で生成される、態様8に記載の方法。
(態様10)
前記第1のフッ素ラジカルが、前記金属酸化物層が配置されたチャンバの内部で点火された第1のプラズマ内で生成される、態様8に記載の方法。
(態様11)
前記第1のフッ素ラジカル又は前記第1のフッ素含有ガスを用いて前記金属酸化物層を処理した後に、前記金属酸化物層をエッチングすることをさらに含む、態様8に記載の方法。
(態様12)
前記金属酸化物層をエッチングした後に、第2のフッ素ラジカル又は第2のフッ素含有ガスを用いて前記金属酸化物層を処理することをさらに含み、前記第2のフッ素ラジカルが、第2の遠隔プラズマ内で生成される、態様11に記載の方法。
(態様13)
前記金属酸化物層をエッチングした後に、第2のフッ素ラジカル又は第2のフッ素含有ガスを用いて前記金属酸化物層を処理することをさらに含み、前記第2のフッ素ラジカルが、前記金属酸化物層が配置されたチャンバの内部で点火された第2のプラズマ内で生成される、態様11に記載の方法。
(態様14)
基板の上にゲート電極を形成することと、
前記ゲート電極の上にゲート誘電体層を堆積することと、
前記ゲート誘電体層の上に金属酸化物層を堆積することと、
フッ素含有ガスを用いて前記金属酸化物層を処理することと、
前記金属酸化物層の上に導電層を堆積することと
を含む方法。
(態様15)
前記金属酸化物層をアニールすることをさらに含む、態様14に記載の方法。
Claims (15)
- 基板の上にゲート電極を形成することと、
前記ゲート電極の上にゲート誘電体層を堆積することと、
前記ゲート誘電体層の上に金属酸化物層を堆積することと、
第1のフッ素ラジカルを用いて前記金属酸化物層を処理することと、
前記金属酸化物層の上に導電層を堆積することと
を含む方法。 - 前記第1のフッ素ラジカルが、第1の遠隔プラズマ内で生成される、請求項1に記載の方法。
- 前記第1のフッ素ラジカルが、前記金属酸化物層が配置されたチャンバの内部で点火された第1のプラズマ内で生成される、請求項1に記載の方法。
- 前記第1のフッ素ラジカルを用いて前記金属酸化物層を処理する前に、前記金属酸化物層をアニールすることをさらに含む、請求項1に記載の方法。
- 前記第1のフッ素ラジカルを用いて前記金属酸化物層を処理した後に、前記金属酸化物層をアニールすることをさらに含む、請求項1に記載の方法。
- 前記金属酸化物層をアニールした後に、第2のフッ素ラジカルを用いて前記金属酸化物層を処理することをさらに含み、前記第2のフッ素ラジカルが、第2の遠隔プラズマ内で生成される、請求項5に記載の方法。
- 前記金属酸化物層をアニールした後に、第2のフッ素ラジカルを用いて前記金属酸化物層を処理することをさらに含み、前記第2のフッ素ラジカルが、前記金属酸化物層が配置されたチャンバの内部で点火された第2のプラズマ内で生成される、請求項5に記載の方法。
- 基板の上に金属酸化物層を堆積することと、
第1のフッ素ラジカル又は第1のフッ素含有ガスを用いて前記金属酸化物層を処理することと、
前記金属酸化物層にゲート誘電体層を堆積することと、
前記金属酸化物層の上に層間誘電体層を堆積することと、
前記層間誘電体層に金属層を堆積することと
を含む方法。 - 前記第1のフッ素ラジカルが、第1の遠隔プラズマ内で生成される、請求項8に記載の方法。
- 前記第1のフッ素ラジカルが、前記金属酸化物層が配置されたチャンバの内部で点火された第1のプラズマ内で生成される、請求項8に記載の方法。
- 前記第1のフッ素ラジカル又は前記第1のフッ素含有ガスを用いて前記金属酸化物層を処理した後に、前記金属酸化物層をエッチングすることをさらに含む、請求項8に記載の方法。
- 前記金属酸化物層をエッチングした後に、第2のフッ素ラジカル又は第2のフッ素含有ガスを用いて前記金属酸化物層を処理することをさらに含み、前記第2のフッ素ラジカルが、第2の遠隔プラズマ内で生成される、請求項11に記載の方法。
- 前記金属酸化物層をエッチングした後に、第2のフッ素ラジカル又は第2のフッ素含有ガスを用いて前記金属酸化物層を処理することをさらに含み、前記第2のフッ素ラジカルが、前記金属酸化物層が配置されたチャンバの内部で点火された第2のプラズマ内で生成される、請求項11に記載の方法。
- 基板の上にゲート電極を形成することと、
前記ゲート電極の上にゲート誘電体層を堆積することと、
前記ゲート誘電体層の上に金属酸化物層を堆積することと、
フッ素含有ガスを用いて前記金属酸化物層を処理することと、
前記金属酸化物層の上に導電層を堆積することと
を含む方法。 - 前記金属酸化物層をアニールすることをさらに含む、請求項14に記載の方法。
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