KR102679289B1 - Tsv/mems/전력 장치 식각용 화학품 - Google Patents
Tsv/mems/전력 장치 식각용 화학품 Download PDFInfo
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- KR102679289B1 KR102679289B1 KR1020237017666A KR20237017666A KR102679289B1 KR 102679289 B1 KR102679289 B1 KR 102679289B1 KR 1020237017666 A KR1020237017666 A KR 1020237017666A KR 20237017666 A KR20237017666 A KR 20237017666A KR 102679289 B1 KR102679289 B1 KR 102679289B1
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- hydrogen
- silicon
- polymer deposition
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- 238000005530 etching Methods 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 claims abstract description 72
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 56
- 239000010703 silicon Substances 0.000 claims abstract description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 54
- 239000012530 fluid Substances 0.000 claims description 184
- 229920000642 polymer Polymers 0.000 claims description 153
- 238000000151 deposition Methods 0.000 claims description 136
- 230000008021 deposition Effects 0.000 claims description 133
- 239000000758 substrate Substances 0.000 claims description 51
- 239000007789 gas Substances 0.000 claims description 30
- 238000001020 plasma etching Methods 0.000 claims description 21
- 229920006254 polymer film Polymers 0.000 claims description 19
- 229910052760 oxygen Inorganic materials 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 10
- LMSLTAIWOIYSGZ-LWMBPPNESA-N (3s,4s)-1,1,2,2,3,4-hexafluorocyclobutane Chemical compound F[C@H]1[C@H](F)C(F)(F)C1(F)F LMSLTAIWOIYSGZ-LWMBPPNESA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052799 carbon Inorganic materials 0.000 claims description 9
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 8
- QMIWYOZFFSLIAK-UHFFFAOYSA-N 3,3,3-trifluoro-2-(trifluoromethyl)prop-1-ene Chemical compound FC(F)(F)C(=C)C(F)(F)F QMIWYOZFFSLIAK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- NLOLSXYRJFEOTA-OWOJBTEDSA-N (e)-1,1,1,4,4,4-hexafluorobut-2-ene Chemical compound FC(F)(F)\C=C\C(F)(F)F NLOLSXYRJFEOTA-OWOJBTEDSA-N 0.000 claims description 3
- NLOLSXYRJFEOTA-UPHRSURJSA-N (z)-1,1,1,4,4,4-hexafluorobut-2-ene Chemical compound FC(F)(F)\C=C/C(F)(F)F NLOLSXYRJFEOTA-UPHRSURJSA-N 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 117
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 116
- 239000001257 hydrogen Substances 0.000 description 116
- 238000006243 chemical reaction Methods 0.000 description 23
- 241000894007 species Species 0.000 description 23
- 239000000463 material Substances 0.000 description 14
- 150000001875 compounds Chemical class 0.000 description 12
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- 125000004122 cyclic group Chemical group 0.000 description 8
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- DMUPYMORYHFFCT-UPHRSURJSA-N (z)-1,2,3,3,3-pentafluoroprop-1-ene Chemical compound F\C=C(/F)C(F)(F)F DMUPYMORYHFFCT-UPHRSURJSA-N 0.000 description 6
- 238000009623 Bosch process Methods 0.000 description 6
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 5
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- 239000007800 oxidant agent Substances 0.000 description 5
- CDOOAUSHHFGWSA-OWOJBTEDSA-N (e)-1,3,3,3-tetrafluoroprop-1-ene Chemical compound F\C=C\C(F)(F)F CDOOAUSHHFGWSA-OWOJBTEDSA-N 0.000 description 4
- IZHPSCJEIFFRLN-UHFFFAOYSA-N 3,3,4,4,4-pentafluorobut-1-ene Chemical compound FC(F)(F)C(F)(F)C=C IZHPSCJEIFFRLN-UHFFFAOYSA-N 0.000 description 4
- FHQKLIHFKVAEEP-UHFFFAOYSA-N 3,3,4,4,5,5-hexafluorocyclopentene Chemical compound FC1(F)C=CC(F)(F)C1(F)F FHQKLIHFKVAEEP-UHFFFAOYSA-N 0.000 description 4
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- YIFLMZOLKQBEBO-UPHRSURJSA-N (z)-1,1,1,2,4,4,4-heptafluorobut-2-ene Chemical compound FC(F)(F)C(/F)=C/C(F)(F)F YIFLMZOLKQBEBO-UPHRSURJSA-N 0.000 description 3
- LTVIWHSKXRWJJN-UPHRSURJSA-N (z)-1,1,1,2,4,4-hexafluorobut-2-ene Chemical compound FC(F)\C=C(/F)C(F)(F)F LTVIWHSKXRWJJN-UPHRSURJSA-N 0.000 description 3
- NDMMKOCNFSTXRU-UHFFFAOYSA-N 1,1,2,3,3-pentafluoroprop-1-ene Chemical compound FC(F)C(F)=C(F)F NDMMKOCNFSTXRU-UHFFFAOYSA-N 0.000 description 3
- QAERDLQYXMEHEB-UHFFFAOYSA-N 1,1,3,3,3-pentafluoroprop-1-ene Chemical compound FC(F)=CC(F)(F)F QAERDLQYXMEHEB-UHFFFAOYSA-N 0.000 description 3
- FAOACLKUNWKVPH-UHFFFAOYSA-N 2,3,3,4,4,4-hexafluorobut-1-ene Chemical compound FC(=C)C(F)(F)C(F)(F)F FAOACLKUNWKVPH-UHFFFAOYSA-N 0.000 description 3
- DKSYJUPLFVFPRY-UHFFFAOYSA-N 2,4,4,4-tetrafluorobut-1-ene Chemical compound FC(=C)CC(F)(F)F DKSYJUPLFVFPRY-UHFFFAOYSA-N 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 230000005587 bubbling Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
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- 150000003254 radicals Chemical group 0.000 description 3
- 238000004626 scanning electron microscopy Methods 0.000 description 3
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- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- MRZSIBDWXMHMHF-OWOJBTEDSA-N (e)-1,1,1,2,3,4,4,5,5-nonafluoropent-2-ene Chemical compound FC(F)C(F)(F)C(\F)=C(/F)C(F)(F)F MRZSIBDWXMHMHF-OWOJBTEDSA-N 0.000 description 2
- BLNWTWDBKNPDDJ-OWOJBTEDSA-N (e)-1,1,1,2,3,4,4-heptafluorobut-2-ene Chemical compound FC(F)C(\F)=C(/F)C(F)(F)F BLNWTWDBKNPDDJ-OWOJBTEDSA-N 0.000 description 2
- PXHPMSUXBSIIAN-HNQUOIGGSA-N (e)-1,1,1,2,3,4,5,5-octafluoropent-2-ene Chemical compound FC(F)C(F)C(\F)=C(/F)C(F)(F)F PXHPMSUXBSIIAN-HNQUOIGGSA-N 0.000 description 2
- WPUUAHVUNJYCRY-NSCUHMNNSA-N (e)-1,1-difluorobut-2-ene Chemical compound C\C=C\C(F)F WPUUAHVUNJYCRY-NSCUHMNNSA-N 0.000 description 2
- YAQXNCHHASYLCA-OWOJBTEDSA-N (e)-1,2,3,3,4,4,5,5,5-nonafluoropent-1-ene Chemical compound F\C=C(\F)C(F)(F)C(F)(F)C(F)(F)F YAQXNCHHASYLCA-OWOJBTEDSA-N 0.000 description 2
- ABBQDHANZQEWHT-OWOJBTEDSA-N (e)-1,4-difluorobut-2-ene Chemical compound FC\C=C\CF ABBQDHANZQEWHT-OWOJBTEDSA-N 0.000 description 2
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- CDOOAUSHHFGWSA-UPHRSURJSA-N (z)-1,3,3,3-tetrafluoroprop-1-ene Chemical compound F\C=C/C(F)(F)F CDOOAUSHHFGWSA-UPHRSURJSA-N 0.000 description 2
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- 238000002474 experimental method Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000013101 initial test Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000002808 molecular sieve Substances 0.000 description 1
- SYSQUGFVNFXIIT-UHFFFAOYSA-N n-[4-(1,3-benzoxazol-2-yl)phenyl]-4-nitrobenzenesulfonamide Chemical class C1=CC([N+](=O)[O-])=CC=C1S(=O)(=O)NC1=CC=C(C=2OC3=CC=CC=C3N=2)C=C1 SYSQUGFVNFXIIT-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001467 poly(styrenesulfonates) Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- URGAHOPLAPQHLN-UHFFFAOYSA-N sodium aluminosilicate Chemical compound [Na+].[Al+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O URGAHOPLAPQHLN-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
- H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Micromachines (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (4)
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| US201462013959P | 2014-06-18 | 2014-06-18 | |
| US62/013,959 | 2014-06-18 | ||
| KR1020227030041A KR102539241B1 (ko) | 2014-06-18 | 2015-06-17 | Tsv/mems/전력 장치 식각용 화학품 |
| PCT/JP2015/003044 WO2015194178A1 (en) | 2014-06-18 | 2015-06-17 | Chemistries for tsv/mems/power device etching |
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| KR20230079491A KR20230079491A (ko) | 2023-06-07 |
| KR102679289B1 true KR102679289B1 (ko) | 2024-06-27 |
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| KR1020177000840A Active KR102444697B1 (ko) | 2014-06-18 | 2015-06-17 | Tsv/mems/전력 장치 식각용 화학품 |
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| KR1020177000840A Active KR102444697B1 (ko) | 2014-06-18 | 2015-06-17 | Tsv/mems/전력 장치 식각용 화학품 |
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|---|---|
| US (3) | US9892932B2 (enExample) |
| EP (1) | EP3158579A4 (enExample) |
| JP (1) | JP6485972B2 (enExample) |
| KR (3) | KR102539241B1 (enExample) |
| CN (2) | CN106663624B (enExample) |
| SG (1) | SG11201610342YA (enExample) |
| TW (3) | TWI733431B (enExample) |
| WO (1) | WO2015194178A1 (enExample) |
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| TWI733431B (zh) * | 2014-06-18 | 2021-07-11 | 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 | 用於tsv/mems/功率元件蝕刻的化學物質 |
| JP6960400B2 (ja) | 2015-11-10 | 2021-11-05 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | エッチング反応物質、およびそれを使用するプラズマフリーの酸化物エッチング方法 |
| JP6587580B2 (ja) * | 2016-06-10 | 2019-10-09 | 東京エレクトロン株式会社 | エッチング処理方法 |
| KR102603885B1 (ko) * | 2017-04-06 | 2023-11-20 | 칸토 덴카 코교 가부시키가이샤 | 드라이 에칭 가스 조성물 및 드라이 에칭 방법 |
| WO2018226501A1 (en) * | 2017-06-08 | 2018-12-13 | Tokyo Electron Limited | Method of plasma etching of silicon-containing organic film using sulfur-based chemistry |
| TWI757545B (zh) * | 2017-09-15 | 2022-03-11 | 日商關東電化工業股份有限公司 | 使用酸鹵化物之原子層蝕刻 |
| US10607999B2 (en) | 2017-11-03 | 2020-03-31 | Varian Semiconductor Equipment Associates, Inc. | Techniques and structure for forming dynamic random access device |
| KR102504833B1 (ko) * | 2017-11-16 | 2023-03-02 | 삼성전자 주식회사 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법 |
| JP7145031B2 (ja) * | 2017-12-25 | 2022-09-30 | 東京エレクトロン株式会社 | 基板を処理する方法、プラズマ処理装置、及び基板処理装置 |
| KR102450580B1 (ko) | 2017-12-22 | 2022-10-07 | 삼성전자주식회사 | 금속 배선 하부의 절연층 구조를 갖는 반도체 장치 |
| CN110010464B (zh) * | 2017-12-25 | 2023-07-14 | 东京毅力科创株式会社 | 处理基板的方法 |
| JP7366918B2 (ja) * | 2018-03-16 | 2023-10-23 | ラム リサーチ コーポレーション | 誘電体における高アスペクト比フィーチャのプラズマエッチング化学物質 |
| JP6874778B2 (ja) * | 2019-01-09 | 2021-05-19 | ダイキン工業株式会社 | シクロブタンの製造方法 |
| CN112119484B (zh) * | 2019-04-19 | 2024-03-22 | 株式会社日立高新技术 | 等离子体处理方法 |
| SG10202010798QA (en) * | 2019-11-08 | 2021-06-29 | Tokyo Electron Ltd | Etching method and plasma processing apparatus |
| CN112786441A (zh) | 2019-11-08 | 2021-05-11 | 东京毅力科创株式会社 | 蚀刻方法及等离子体处理装置 |
| WO2021090516A1 (ja) * | 2019-11-08 | 2021-05-14 | 東京エレクトロン株式会社 | エッチング方法 |
| CN116169018A (zh) * | 2019-11-08 | 2023-05-26 | 东京毅力科创株式会社 | 蚀刻方法 |
| US11456180B2 (en) | 2019-11-08 | 2022-09-27 | Tokyo Electron Limited | Etching method |
| KR102389081B1 (ko) * | 2020-04-06 | 2022-04-20 | 아주대학교산학협력단 | PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법 |
| KR102388963B1 (ko) | 2020-05-07 | 2022-04-20 | 아주대학교산학협력단 | 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법 |
| KR102244862B1 (ko) * | 2020-08-04 | 2021-04-27 | (주)원익머트리얼즈 | 식각 가스 혼합물과 이를 이용한 패턴 형성 방법 |
| WO2022074708A1 (ja) * | 2020-10-05 | 2022-04-14 | Ｓｐｐテクノロジーズ株式会社 | プラズマ処理用ガス、プラズマ処理方法及びプラズマ処理装置 |
| US20240018075A1 (en) * | 2020-10-15 | 2024-01-18 | Resonac Corporation | Method for storing fluorobutene |
| JPWO2022080275A1 (enExample) * | 2020-10-15 | 2022-04-21 | ||
| EP4230610A4 (en) * | 2020-10-15 | 2024-12-04 | Resonac Corporation | STORAGE PROCEDURE FOR FLUOR-2-BUTENE |
| EP4230608A4 (en) * | 2020-10-15 | 2024-11-27 | Resonac Corporation | PROCESS FOR STORING FLUORO-2-BUTENE |
| IL302125A (en) * | 2020-10-15 | 2023-06-01 | Resonac Corp | Etching gas, method for manufacturing the same, etching method and method for manufacturing a semiconductor element |
| CN116997997A (zh) * | 2021-03-30 | 2023-11-03 | 东京毅力科创株式会社 | 蚀刻方法和蚀刻装置 |
| WO2025182815A1 (ja) * | 2024-02-27 | 2025-09-04 | セントラル硝子株式会社 | エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物 |
| WO2025183152A1 (ja) * | 2024-03-01 | 2025-09-04 | ダイキン工業株式会社 | デポジションガス |
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-
2015
- 2015-06-12 TW TW109114840A patent/TWI733431B/zh active
- 2015-06-12 TW TW108109359A patent/TWI695423B/zh active
- 2015-06-12 TW TW104119063A patent/TWI658509B/zh active
- 2015-06-17 KR KR1020227030041A patent/KR102539241B1/ko active Active
- 2015-06-17 WO PCT/JP2015/003044 patent/WO2015194178A1/en not_active Ceased
- 2015-06-17 US US15/316,932 patent/US9892932B2/en active Active
- 2015-06-17 CN CN201580031726.4A patent/CN106663624B/zh active Active
- 2015-06-17 EP EP15808907.8A patent/EP3158579A4/en not_active Withdrawn
- 2015-06-17 JP JP2016571169A patent/JP6485972B2/ja active Active
- 2015-06-17 SG SG11201610342YA patent/SG11201610342YA/en unknown
- 2015-06-17 KR KR1020177000840A patent/KR102444697B1/ko active Active
- 2015-06-17 CN CN202010698443.8A patent/CN111816559B/zh active Active
- 2015-06-17 KR KR1020237017666A patent/KR102679289B1/ko active Active
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2017
- 2017-09-08 US US15/699,668 patent/US10103031B2/en active Active
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2018
- 2018-08-28 US US16/114,371 patent/US10720335B2/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008270348A (ja) | 2007-04-17 | 2008-11-06 | Seiko Epson Corp | ドライエッチング装置及び被加工物の加工方法 |
| US20130105947A1 (en) | 2011-10-26 | 2013-05-02 | Zeon Corporation | High aspect ratio and reduced undercut trench etch process for a semiconductor substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| US9892932B2 (en) | 2018-02-13 |
| EP3158579A4 (en) | 2018-02-21 |
| TW201606867A (zh) | 2016-02-16 |
| KR20170020434A (ko) | 2017-02-22 |
| EP3158579A1 (en) | 2017-04-26 |
| US20180366336A1 (en) | 2018-12-20 |
| KR102539241B1 (ko) | 2023-06-01 |
| WO2015194178A1 (en) | 2015-12-23 |
| TWI658509B (zh) | 2019-05-01 |
| JP2017518645A (ja) | 2017-07-06 |
| TW201929071A (zh) | 2019-07-16 |
| CN106663624B (zh) | 2020-08-14 |
| TW202030312A (zh) | 2020-08-16 |
| KR102444697B1 (ko) | 2022-09-16 |
| JP6485972B2 (ja) | 2019-03-20 |
| US20180076046A1 (en) | 2018-03-15 |
| KR20230079491A (ko) | 2023-06-07 |
| TWI733431B (zh) | 2021-07-11 |
| US20170103901A1 (en) | 2017-04-13 |
| CN111816559B (zh) | 2024-06-11 |
| CN111816559A (zh) | 2020-10-23 |
| KR20220124825A (ko) | 2022-09-14 |
| US10720335B2 (en) | 2020-07-21 |
| US10103031B2 (en) | 2018-10-16 |
| CN106663624A (zh) | 2017-05-10 |
| SG11201610342YA (en) | 2017-01-27 |
| TWI695423B (zh) | 2020-06-01 |
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