JP6485972B2 - Ｔｓｖ／ｍｅｍｓ／パワーデバイスエッチング用の化学物質 - Google Patents

Ｔｓｖ／ｍｅｍｓ／パワーデバイスエッチング用の化学物質 Download PDF

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JP6485972B2
JP6485972B2 JP2016571169A JP2016571169A JP6485972B2 JP 6485972 B2 JP6485972 B2 JP 6485972B2 JP 2016571169 A JP2016571169 A JP 2016571169A JP 2016571169 A JP2016571169 A JP 2016571169A JP 6485972 B2 JP6485972 B2 JP 6485972B2
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fluid
hydrogen
etching
silicon
polymer deposition
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JP2017518645A (ja
JP2017518645A5 (enExample
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ペン・シェン
クリスチャン・デュサラ
カーティス・アンダーソン
ラウル・グプタ
ヴィンセント・エム・オマージー
ネイサン・スタッフォード
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レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード
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    • H10P50/244—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
JP2016571169A 2014-06-18 2015-06-17 Ｔｓｖ／ｍｅｍｓ／パワーデバイスエッチング用の化学物質 Active JP6485972B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18
PCT/JP2015/003044 WO2015194178A1 (en) 2014-06-18 2015-06-17 Chemistries for tsv/mems/power device etching

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JP2017518645A JP2017518645A (ja) 2017-07-06
JP2017518645A5 JP2017518645A5 (enExample) 2018-06-07
JP6485972B2 true JP6485972B2 (ja) 2019-03-20

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US (3) US9892932B2 (enExample)
EP (1) EP3158579A4 (enExample)
JP (1) JP6485972B2 (enExample)
KR (3) KR102444697B1 (enExample)
CN (2) CN111816559B (enExample)
SG (1) SG11201610342YA (enExample)
TW (3) TWI695423B (enExample)
WO (1) WO2015194178A1 (enExample)

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JPWO2022080275A1 (enExample) * 2020-10-15 2022-04-21
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CN116348438A (zh) * 2020-10-15 2023-06-27 株式会社力森诺科 氟丁烯的保存方法
KR20230161474A (ko) * 2021-03-30 2023-11-27 도쿄엘렉트론가부시키가이샤 에칭 방법 및 에칭 장치
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Also Published As

Publication number Publication date
EP3158579A4 (en) 2018-02-21
KR102679289B1 (ko) 2024-06-27
US10103031B2 (en) 2018-10-16
CN106663624A (zh) 2017-05-10
TWI695423B (zh) 2020-06-01
US9892932B2 (en) 2018-02-13
TWI733431B (zh) 2021-07-11
EP3158579A1 (en) 2017-04-26
TWI658509B (zh) 2019-05-01
TW202030312A (zh) 2020-08-16
CN111816559B (zh) 2024-06-11
US20180076046A1 (en) 2018-03-15
WO2015194178A1 (en) 2015-12-23
US10720335B2 (en) 2020-07-21
US20170103901A1 (en) 2017-04-13
US20180366336A1 (en) 2018-12-20
JP2017518645A (ja) 2017-07-06
SG11201610342YA (en) 2017-01-27
KR20220124825A (ko) 2022-09-14
TW201606867A (zh) 2016-02-16
TW201929071A (zh) 2019-07-16
CN111816559A (zh) 2020-10-23
KR102539241B1 (ko) 2023-06-01
CN106663624B (zh) 2020-08-14
KR102444697B1 (ko) 2022-09-16
KR20230079491A (ko) 2023-06-07
KR20170020434A (ko) 2017-02-22

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