JP6485972B2 - Ｔｓｖ／ｍｅｍｓ／パワーデバイスエッチング用の化学物質 - Google Patents

Ｔｓｖ／ｍｅｍｓ／パワーデバイスエッチング用の化学物質 Download PDF

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JP6485972B2
JP6485972B2 JP2016571169A JP2016571169A JP6485972B2 JP 6485972 B2 JP6485972 B2 JP 6485972B2 JP 2016571169 A JP2016571169 A JP 2016571169A JP 2016571169 A JP2016571169 A JP 2016571169A JP 6485972 B2 JP6485972 B2 JP 6485972B2
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fluid
hydrogen
etching
silicon
polymer deposition
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JP2017518645A (ja
JP2017518645A5 (enExample
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ペン・シェン
クリスチャン・デュサラ
カーティス・アンダーソン
ラウル・グプタ
ヴィンセント・エム・オマージー
ネイサン・スタッフォード
Original Assignee
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
JP2016571169A 2014-06-18 2015-06-17 Ｔｓｖ／ｍｅｍｓ／パワーデバイスエッチング用の化学物質 Active JP6485972B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18
PCT/JP2015/003044 WO2015194178A1 (en) 2014-06-18 2015-06-17 Chemistries for tsv/mems/power device etching

Publications (3)

Publication Number Publication Date
JP2017518645A JP2017518645A (ja) 2017-07-06
JP2017518645A5 JP2017518645A5 (enExample) 2018-06-07
JP6485972B2 true JP6485972B2 (ja) 2019-03-20

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JP2016571169A Active JP6485972B2 (ja) 2014-06-18 2015-06-17 Ｔｓｖ／ｍｅｍｓ／パワーデバイスエッチング用の化学物質

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US (3) US9892932B2 (enExample)
EP (1) EP3158579A4 (enExample)
JP (1) JP6485972B2 (enExample)
KR (3) KR102444697B1 (enExample)
CN (2) CN106663624B (enExample)
SG (1) SG11201610342YA (enExample)
TW (3) TWI733431B (enExample)
WO (1) WO2015194178A1 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI733431B (zh) * 2014-06-18 2021-07-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於tsv/mems/功率元件蝕刻的化學物質
CN108352316B (zh) 2015-11-10 2023-03-24 乔治洛德方法研究和开发液化空气有限公司 蚀刻反应物及使用其的无等离子体的氧化物蚀刻方法
JP6587580B2 (ja) * 2016-06-10 2019-10-09 東京エレクトロン株式会社 エッチング処理方法
KR102603885B1 (ko) * 2017-04-06 2023-11-20 칸토 덴카 코교 가부시키가이샤 드라이 에칭 가스 조성물 및 드라이 에칭 방법
KR102594444B1 (ko) * 2017-06-08 2023-10-25 도쿄엘렉트론가부시키가이샤 황 기반 화학물을 이용한 실리콘 함유 유기 막의 플라즈마 에칭 방법
TWI757545B (zh) * 2017-09-15 2022-03-11 日商關東電化工業股份有限公司 使用酸鹵化物之原子層蝕刻
US10607999B2 (en) 2017-11-03 2020-03-31 Varian Semiconductor Equipment Associates, Inc. Techniques and structure for forming dynamic random access device
KR102504833B1 (ko) * 2017-11-16 2023-03-02 삼성전자 주식회사 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법
JP7145031B2 (ja) 2017-12-25 2022-09-30 東京エレクトロン株式会社 基板を処理する方法、プラズマ処理装置、及び基板処理装置
KR102450580B1 (ko) 2017-12-22 2022-10-07 삼성전자주식회사 금속 배선 하부의 절연층 구조를 갖는 반도체 장치
CN110010464B (zh) * 2017-12-25 2023-07-14 东京毅力科创株式会社 处理基板的方法
WO2019178030A1 (en) * 2018-03-16 2019-09-19 Lam Research Corporation Plasma etching chemistries of high aspect ratio features in dielectrics
JP6874778B2 (ja) * 2019-01-09 2021-05-19 ダイキン工業株式会社 シクロブタンの製造方法
KR102419373B1 (ko) * 2019-04-19 2022-07-12 주식회사 히타치하이테크 플라스마 처리 방법
SG10202010798QA (en) * 2019-11-08 2021-06-29 Tokyo Electron Ltd Etching method and plasma processing apparatus
US11456180B2 (en) 2019-11-08 2022-09-27 Tokyo Electron Limited Etching method
WO2021090798A1 (ja) 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
CN112786441B (zh) 2019-11-08 2026-01-23 东京毅力科创株式会社 蚀刻方法及等离子体处理装置
WO2021090516A1 (ja) 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
KR102389081B1 (ko) * 2020-04-06 2022-04-20 아주대학교산학협력단 PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법
KR102388963B1 (ko) 2020-05-07 2022-04-20 아주대학교산학협력단 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법
KR102244862B1 (ko) * 2020-08-04 2021-04-27 (주)원익머트리얼즈 식각 가스 혼합물과 이를 이용한 패턴 형성 방법
JP6977199B1 (ja) * 2020-10-05 2021-12-08 Ｓｐｐテクノロジーズ株式会社 プラズマ処理用ガス、プラズマ処理方法及びプラズマ処理装置
IL302121A (en) * 2020-10-15 2023-06-01 Resonac Corp METHOD FOR STORING FLUORO-2-BUTENE
JPWO2022080269A1 (enExample) * 2020-10-15 2022-04-21
IL302119A (en) * 2020-10-15 2023-06-01 Resonac Corp STORAGE METHOD FOR FLUORO-2-BUTENE
KR102828127B1 (ko) * 2020-10-15 2025-07-03 가부시끼가이샤 레조낙 에칭 가스 및 그 제조 방법, 및 에칭 방법, 반도체 소자의 제조 방법
EP4230609A4 (en) * 2020-10-15 2024-11-20 Resonac Corporation PROCESS FOR STORING FLUOR-2-BUTENE
JP7724281B2 (ja) * 2021-03-30 2025-08-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
TWI906294B (zh) * 2021-05-07 2025-12-01 日商東京威力科創股份有限公司 蝕刻方法及蝕刻裝置
JP7679464B2 (ja) 2021-05-07 2025-05-19 東京エレクトロン株式会社 エッチング方法及びエッチング装置
KR102915159B1 (ko) * 2021-05-07 2026-01-20 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
WO2025182815A1 (ja) * 2024-02-27 2025-09-04 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
TW202548079A (zh) 2024-03-01 2025-12-16 日商大金工業股份有限公司 沉積氣體
WO2025258395A1 (ja) * 2024-06-11 2025-12-18 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
CN121398476A (zh) * 2025-12-24 2026-01-23 西湖大学 一种原位自清洁的氧化钨刻蚀方法、半导体结构及芯片

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03154337A (ja) * 1989-11-13 1991-07-02 Hitachi Ltd 半導体装置の製造方法
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE19736370C2 (de) 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
US6074959A (en) * 1997-09-19 2000-06-13 Applied Materials, Inc. Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide
DE19826382C2 (de) 1998-06-12 2002-02-07 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6284666B1 (en) 2000-05-31 2001-09-04 International Business Machines Corporation Method of reducing RIE lag for deep trench silicon etching
US6569774B1 (en) 2000-08-31 2003-05-27 Micron Technology, Inc. Method to eliminate striations and surface roughness caused by dry etch
JP2002110647A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
US6746961B2 (en) * 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US6900136B2 (en) 2002-03-08 2005-05-31 Industrial Technology Research Institute Method for reducing reactive ion etching (RIE) lag in semiconductor fabrication processes
US6916746B1 (en) * 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US7453150B1 (en) * 2004-04-01 2008-11-18 Rensselaer Polytechnic Institute Three-dimensional face-to-face integration assembly
JP2007537602A (ja) 2004-05-11 2007-12-20 アプライド　マテリアルズ　インコーポレイテッド フルオロカーボン化学エッチングにおけるｈ２添加物を使用しての炭素ドープ酸化ケイ素エッチング
US7755197B2 (en) * 2006-02-10 2010-07-13 Macronix International Co., Ltd. UV blocking and crack protecting passivation layer
JP2008270348A (ja) * 2007-04-17 2008-11-06 Seiko Epson Corp ドライエッチング装置及び被加工物の加工方法
CN100468664C (zh) * 2007-05-18 2009-03-11 西安交通大学 氧化锌紫外焦平面成像阵列制作工艺中的化学刻蚀方法
US20090068767A1 (en) 2007-09-12 2009-03-12 Lam Research Corporation Tuning via facet with minimal rie lag
JP5192214B2 (ja) * 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP4978512B2 (ja) * 2008-02-29 2012-07-18 日本ゼオン株式会社 プラズマエッチング方法
KR20110125263A (ko) * 2009-03-06 2011-11-18 솔베이 플루오르 게엠베하 불포화 수소화불화탄소의 용도
WO2011093263A1 (ja) * 2010-02-01 2011-08-04 セントラル硝子株式会社 ドライエッチング剤及びそれを用いたドライエッチング方法
US8574447B2 (en) * 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
JP2013030531A (ja) 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
US8808563B2 (en) * 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
US8652969B2 (en) * 2011-10-26 2014-02-18 International Business Machines Corporation High aspect ratio and reduced undercut trench etch process for a semiconductor substrate
US9514959B2 (en) 2012-10-30 2016-12-06 American Air Liquide, Inc. Fluorocarbon molecules for high aspect ratio oxide etch
CN103824767B (zh) 2012-11-16 2017-05-17 中微半导体设备(上海)有限公司 一种深硅通孔的刻蚀方法
JP6017936B2 (ja) * 2012-11-27 2016-11-02 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
KR102275996B1 (ko) 2013-03-28 2021-07-14 더 케무어스 컴퍼니 에프씨, 엘엘씨 하이드로플루오로올레핀 식각 가스 혼합물
TWI612182B (zh) 2013-09-09 2018-01-21 液態空氣喬治斯克勞帝方法研究開發股份有限公司 用蝕刻氣體蝕刻半導體結構的方法
WO2015053339A1 (ja) 2013-10-09 2015-04-16 旭硝子株式会社 ２，３，３，３－テトラフルオロプロペンの精製方法
TWI733431B (zh) * 2014-06-18 2021-07-11 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於tsv/mems/功率元件蝕刻的化學物質

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Publication number Publication date
KR102679289B1 (ko) 2024-06-27
JP2017518645A (ja) 2017-07-06
US10103031B2 (en) 2018-10-16
TWI695423B (zh) 2020-06-01
US20170103901A1 (en) 2017-04-13
CN111816559B (zh) 2024-06-11
EP3158579A4 (en) 2018-02-21
TW201929071A (zh) 2019-07-16
KR102444697B1 (ko) 2022-09-16
US20180076046A1 (en) 2018-03-15
CN111816559A (zh) 2020-10-23
TWI658509B (zh) 2019-05-01
KR20170020434A (ko) 2017-02-22
US20180366336A1 (en) 2018-12-20
TW202030312A (zh) 2020-08-16
KR20220124825A (ko) 2022-09-14
KR20230079491A (ko) 2023-06-07
TWI733431B (zh) 2021-07-11
TW201606867A (zh) 2016-02-16
EP3158579A1 (en) 2017-04-26
KR102539241B1 (ko) 2023-06-01
WO2015194178A1 (en) 2015-12-23
SG11201610342YA (en) 2017-01-27
CN106663624A (zh) 2017-05-10
US9892932B2 (en) 2018-02-13
CN106663624B (zh) 2020-08-14
US10720335B2 (en) 2020-07-21

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