KR102444697B1 - Tsv/mems/전력 장치 식각용 화학품 - Google Patents

Tsv/mems/전력 장치 식각용 화학품 Download PDF

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Publication number
KR102444697B1
KR102444697B1 KR1020177000840A KR20177000840A KR102444697B1 KR 102444697 B1 KR102444697 B1 KR 102444697B1 KR 1020177000840 A KR1020177000840 A KR 1020177000840A KR 20177000840 A KR20177000840 A KR 20177000840A KR 102444697 B1 KR102444697 B1 KR 102444697B1
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etching
hydrogen
fluid
silicon
polymer deposition
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KR20170020434A (ko
Inventor
펑 셴
크리스티안 뒤사랫
커티스 앤더슨
라훌 굽타
빈센트 엠. 오마르지
네이던 스태포드
Original Assignee
레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드
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Priority to KR1020227030041A priority Critical patent/KR102539241B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • H10P50/244—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020177000840A 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품 Active KR102444697B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227030041A KR102539241B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18
PCT/JP2015/003044 WO2015194178A1 (en) 2014-06-18 2015-06-17 Chemistries for tsv/mems/power device etching

Related Child Applications (1)

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KR1020227030041A Division KR102539241B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

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KR20170020434A KR20170020434A (ko) 2017-02-22
KR102444697B1 true KR102444697B1 (ko) 2022-09-16

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KR1020237017666A Active KR102679289B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품
KR1020227030041A Active KR102539241B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

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US (3) US9892932B2 (enExample)
EP (1) EP3158579A4 (enExample)
JP (1) JP6485972B2 (enExample)
KR (3) KR102444697B1 (enExample)
CN (2) CN111816559B (enExample)
SG (1) SG11201610342YA (enExample)
TW (3) TWI695423B (enExample)
WO (1) WO2015194178A1 (enExample)

Families Citing this family (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI695423B (zh) * 2014-06-18 2020-06-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於tsv/mems/功率元件蝕刻的化學物質
EP3375008B1 (en) 2015-11-10 2020-05-20 L'Air Liquide Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Plasma-free etching process
JP6587580B2 (ja) * 2016-06-10 2019-10-09 東京エレクトロン株式会社 エッチング処理方法
CN110546742B (zh) * 2017-04-06 2023-09-29 关东电化工业株式会社 干式蚀刻气体组合物及干式蚀刻方法
KR102594444B1 (ko) * 2017-06-08 2023-10-25 도쿄엘렉트론가부시키가이샤 황 기반 화학물을 이용한 실리콘 함유 유기 막의 플라즈마 에칭 방법
TWI757545B (zh) * 2017-09-15 2022-03-11 日商關東電化工業股份有限公司 使用酸鹵化物之原子層蝕刻
US10607999B2 (en) 2017-11-03 2020-03-31 Varian Semiconductor Equipment Associates, Inc. Techniques and structure for forming dynamic random access device
KR102504833B1 (ko) * 2017-11-16 2023-03-02 삼성전자 주식회사 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법
JP7145031B2 (ja) 2017-12-25 2022-09-30 東京エレクトロン株式会社 基板を処理する方法、プラズマ処理装置、及び基板処理装置
KR102450580B1 (ko) 2017-12-22 2022-10-07 삼성전자주식회사 금속 배선 하부의 절연층 구조를 갖는 반도체 장치
CN110010464B (zh) * 2017-12-25 2023-07-14 东京毅力科创株式会社 处理基板的方法
KR20200123481A (ko) * 2018-03-16 2020-10-29 램 리써치 코포레이션 유전체들의 고 종횡비 피처들의 플라즈마 에칭 화학물질들
JP6874778B2 (ja) * 2019-01-09 2021-05-19 ダイキン工業株式会社 シクロブタンの製造方法
US11257678B2 (en) * 2019-04-19 2022-02-22 Hitachi High-Tech Corporation Plasma processing method
CN112786441B (zh) 2019-11-08 2026-01-23 东京毅力科创株式会社 蚀刻方法及等离子体处理装置
SG10202010798QA (en) * 2019-11-08 2021-06-29 Tokyo Electron Ltd Etching method and plasma processing apparatus
WO2021090516A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
US11456180B2 (en) 2019-11-08 2022-09-27 Tokyo Electron Limited Etching method
CN116169018A (zh) * 2019-11-08 2023-05-26 东京毅力科创株式会社 蚀刻方法
KR102389081B1 (ko) * 2020-04-06 2022-04-20 아주대학교산학협력단 PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법
KR102388963B1 (ko) * 2020-05-07 2022-04-20 아주대학교산학협력단 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법
KR102244862B1 (ko) * 2020-08-04 2021-04-27 (주)원익머트리얼즈 식각 가스 혼합물과 이를 이용한 패턴 형성 방법
US20230230810A1 (en) * 2020-10-05 2023-07-20 Spp Technologies Co., Ltd. Plasma processing gas, plasma processing method, and plasma processing apparatus
KR102900581B1 (ko) * 2020-10-15 2025-12-16 가부시끼가이샤 레조낙 플루오로-2-부텐의 보관 방법
JPWO2022080275A1 (enExample) * 2020-10-15 2022-04-21
JP7775835B2 (ja) * 2020-10-15 2025-11-26 株式会社レゾナック エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法
CN116323527A (zh) * 2020-10-15 2023-06-23 株式会社力森诺科 氟-2-丁烯的保存方法
CN116348438A (zh) * 2020-10-15 2023-06-27 株式会社力森诺科 氟丁烯的保存方法
KR20230161474A (ko) * 2021-03-30 2023-11-27 도쿄엘렉트론가부시키가이샤 에칭 방법 및 에칭 장치
JP7679464B2 (ja) 2021-05-07 2025-05-19 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2025182815A1 (ja) * 2024-02-27 2025-09-04 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
JP7737066B1 (ja) 2024-03-01 2025-09-10 ダイキン工業株式会社 デポジションガス
WO2025258395A1 (ja) * 2024-06-11 2025-12-18 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008270348A (ja) 2007-04-17 2008-11-06 Seiko Epson Corp ドライエッチング装置及び被加工物の加工方法
US20130105947A1 (en) * 2011-10-26 2013-05-02 Zeon Corporation High aspect ratio and reduced undercut trench etch process for a semiconductor substrate

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03154337A (ja) * 1989-11-13 1991-07-02 Hitachi Ltd 半導体装置の製造方法
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
DE19736370C2 (de) 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
US6074959A (en) * 1997-09-19 2000-06-13 Applied Materials, Inc. Method manifesting a wide process window and using hexafluoropropane or other hydrofluoropropanes to selectively etch oxide
DE19826382C2 (de) 1998-06-12 2002-02-07 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
US6284666B1 (en) 2000-05-31 2001-09-04 International Business Machines Corporation Method of reducing RIE lag for deep trench silicon etching
US6569774B1 (en) 2000-08-31 2003-05-27 Micron Technology, Inc. Method to eliminate striations and surface roughness caused by dry etch
JP2002110647A (ja) * 2000-09-29 2002-04-12 Hitachi Ltd 半導体集積回路装置の製造方法
US6746961B2 (en) * 2001-06-19 2004-06-08 Lam Research Corporation Plasma etching of dielectric layer with etch profile control
US6900136B2 (en) 2002-03-08 2005-05-31 Industrial Technology Research Institute Method for reducing reactive ion etching (RIE) lag in semiconductor fabrication processes
US6916746B1 (en) 2003-04-09 2005-07-12 Lam Research Corporation Method for plasma etching using periodic modulation of gas chemistry
US7453150B1 (en) * 2004-04-01 2008-11-18 Rensselaer Polytechnic Institute Three-dimensional face-to-face integration assembly
US20050266691A1 (en) 2004-05-11 2005-12-01 Applied Materials Inc. Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch chemistry
US7755197B2 (en) * 2006-02-10 2010-07-13 Macronix International Co., Ltd. UV blocking and crack protecting passivation layer
CN100468664C (zh) * 2007-05-18 2009-03-11 西安交通大学 氧化锌紫外焦平面成像阵列制作工艺中的化学刻蚀方法
US20090068767A1 (en) 2007-09-12 2009-03-12 Lam Research Corporation Tuning via facet with minimal rie lag
JP5192214B2 (ja) * 2007-11-02 2013-05-08 東京エレクトロン株式会社 ガス供給装置、基板処理装置および基板処理方法
US8614151B2 (en) * 2008-01-04 2013-12-24 Micron Technology, Inc. Method of etching a high aspect ratio contact
JP4978512B2 (ja) 2008-02-29 2012-07-18 日本ゼオン株式会社 プラズマエッチング方法
WO2010100254A1 (en) 2009-03-06 2010-09-10 Solvay Fluor Gmbh Use of unsaturated hydrofluorocarbons
KR101422155B1 (ko) * 2010-02-01 2014-07-22 샌트랄 글래스 컴퍼니 리미티드 드라이 에칭제 및 그것을 사용한 드라이 에칭 방법
US8574447B2 (en) * 2010-03-31 2013-11-05 Lam Research Corporation Inorganic rapid alternating process for silicon etch
JP2013030531A (ja) * 2011-07-27 2013-02-07 Central Glass Co Ltd ドライエッチング剤
US8808563B2 (en) * 2011-10-07 2014-08-19 Applied Materials, Inc. Selective etch of silicon by way of metastable hydrogen termination
KR102048959B1 (ko) 2012-10-30 2019-11-27 레르 리키드 쏘시에떼 아노님 뿌르 레?드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 규소-함유 필름의 에칭을 위한 방법 및 에칭 가스
CN103824767B (zh) 2012-11-16 2017-05-17 中微半导体设备(上海)有限公司 一种深硅通孔的刻蚀方法
JP6017936B2 (ja) * 2012-11-27 2016-11-02 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理方法
US20160284523A1 (en) 2013-03-28 2016-09-29 The Chemours Company Fc, Llc Hydrofluoroolefin Etching Gas Mixtures
TWI642809B (zh) 2013-09-09 2018-12-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用蝕刻氣體蝕刻半導體結構的方法
JP6358263B2 (ja) 2013-10-09 2018-07-18 旭硝子株式会社 ２，３，３，３−テトラフルオロプロペンの精製方法
TWI695423B (zh) * 2014-06-18 2020-06-01 法商液態空氣喬治斯克勞帝方法研究開發股份有限公司 用於tsv/mems/功率元件蝕刻的化學物質

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008270348A (ja) 2007-04-17 2008-11-06 Seiko Epson Corp ドライエッチング装置及び被加工物の加工方法
US20130105947A1 (en) * 2011-10-26 2013-05-02 Zeon Corporation High aspect ratio and reduced undercut trench etch process for a semiconductor substrate

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EP3158579A4 (en) 2018-02-21
KR102679289B1 (ko) 2024-06-27
US10103031B2 (en) 2018-10-16
CN106663624A (zh) 2017-05-10
TWI695423B (zh) 2020-06-01
US9892932B2 (en) 2018-02-13
TWI733431B (zh) 2021-07-11
EP3158579A1 (en) 2017-04-26
TWI658509B (zh) 2019-05-01
TW202030312A (zh) 2020-08-16
CN111816559B (zh) 2024-06-11
US20180076046A1 (en) 2018-03-15
WO2015194178A1 (en) 2015-12-23
JP6485972B2 (ja) 2019-03-20
US10720335B2 (en) 2020-07-21
US20170103901A1 (en) 2017-04-13
US20180366336A1 (en) 2018-12-20
JP2017518645A (ja) 2017-07-06
SG11201610342YA (en) 2017-01-27
KR20220124825A (ko) 2022-09-14
TW201606867A (zh) 2016-02-16
TW201929071A (zh) 2019-07-16
CN111816559A (zh) 2020-10-23
KR102539241B1 (ko) 2023-06-01
CN106663624B (zh) 2020-08-14
KR20230079491A (ko) 2023-06-07
KR20170020434A (ko) 2017-02-22

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