KR102444697B1 - Tsv/mems/전력 장치 식각용 화학품 - Google Patents

Tsv/mems/전력 장치 식각용 화학품 Download PDF

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Publication number
KR102444697B1
KR102444697B1 KR1020177000840A KR20177000840A KR102444697B1 KR 102444697 B1 KR102444697 B1 KR 102444697B1 KR 1020177000840 A KR1020177000840 A KR 1020177000840A KR 20177000840 A KR20177000840 A KR 20177000840A KR 102444697 B1 KR102444697 B1 KR 102444697B1
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etching
hydrogen
fluid
silicon
polymer deposition
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KR20170020434A (ko
Inventor
펑 셴
크리스티안 뒤사랫
커티스 앤더슨
라훌 굽타
빈센트 엠. 오마르지
네이던 스태포드
Original Assignee
레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드
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Priority to KR1020227030041A priority Critical patent/KR102539241B1/ko
Publication of KR20170020434A publication Critical patent/KR20170020434A/ko
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    • H01L21/30655—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H01L21/02315—
    • H01L21/32136—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
KR1020177000840A 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품 Active KR102444697B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227030041A KR102539241B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18
PCT/JP2015/003044 WO2015194178A1 (en) 2014-06-18 2015-06-17 Chemistries for tsv/mems/power device etching

Related Child Applications (1)

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KR1020227030041A Division KR102539241B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

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KR20170020434A KR20170020434A (ko) 2017-02-22
KR102444697B1 true KR102444697B1 (ko) 2022-09-16

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KR1020177000840A Active KR102444697B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품
KR1020227030041A Active KR102539241B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품
KR1020237017666A Active KR102679289B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

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KR1020237017666A Active KR102679289B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

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US (3) US9892932B2 (enExample)
EP (1) EP3158579A4 (enExample)
JP (1) JP6485972B2 (enExample)
KR (3) KR102444697B1 (enExample)
CN (2) CN106663624B (enExample)
SG (1) SG11201610342YA (enExample)
TW (3) TWI733431B (enExample)
WO (1) WO2015194178A1 (enExample)

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CN108352316B (zh) 2015-11-10 2023-03-24 乔治洛德方法研究和开发液化空气有限公司 蚀刻反应物及使用其的无等离子体的氧化物蚀刻方法
JP6587580B2 (ja) * 2016-06-10 2019-10-09 東京エレクトロン株式会社 エッチング処理方法
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KR102594444B1 (ko) * 2017-06-08 2023-10-25 도쿄엘렉트론가부시키가이샤 황 기반 화학물을 이용한 실리콘 함유 유기 막의 플라즈마 에칭 방법
TWI757545B (zh) * 2017-09-15 2022-03-11 日商關東電化工業股份有限公司 使用酸鹵化物之原子層蝕刻
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KR102504833B1 (ko) * 2017-11-16 2023-03-02 삼성전자 주식회사 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법
JP7145031B2 (ja) 2017-12-25 2022-09-30 東京エレクトロン株式会社 基板を処理する方法、プラズマ処理装置、及び基板処理装置
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CN110010464B (zh) * 2017-12-25 2023-07-14 东京毅力科创株式会社 处理基板的方法
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KR102389081B1 (ko) * 2020-04-06 2022-04-20 아주대학교산학협력단 PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법
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KR102828127B1 (ko) * 2020-10-15 2025-07-03 가부시끼가이샤 레조낙 에칭 가스 및 그 제조 방법, 및 에칭 방법, 반도체 소자의 제조 방법
EP4230609A4 (en) * 2020-10-15 2024-11-20 Resonac Corporation PROCESS FOR STORING FLUOR-2-BUTENE
JP7724281B2 (ja) * 2021-03-30 2025-08-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
TWI906294B (zh) * 2021-05-07 2025-12-01 日商東京威力科創股份有限公司 蝕刻方法及蝕刻裝置
JP7679464B2 (ja) 2021-05-07 2025-05-19 東京エレクトロン株式会社 エッチング方法及びエッチング装置
KR102915159B1 (ko) * 2021-05-07 2026-01-20 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
WO2025182815A1 (ja) * 2024-02-27 2025-09-04 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
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KR102679289B1 (ko) 2024-06-27
JP2017518645A (ja) 2017-07-06
US10103031B2 (en) 2018-10-16
TWI695423B (zh) 2020-06-01
US20170103901A1 (en) 2017-04-13
CN111816559B (zh) 2024-06-11
EP3158579A4 (en) 2018-02-21
TW201929071A (zh) 2019-07-16
US20180076046A1 (en) 2018-03-15
CN111816559A (zh) 2020-10-23
TWI658509B (zh) 2019-05-01
KR20170020434A (ko) 2017-02-22
JP6485972B2 (ja) 2019-03-20
US20180366336A1 (en) 2018-12-20
TW202030312A (zh) 2020-08-16
KR20220124825A (ko) 2022-09-14
KR20230079491A (ko) 2023-06-07
TWI733431B (zh) 2021-07-11
TW201606867A (zh) 2016-02-16
EP3158579A1 (en) 2017-04-26
KR102539241B1 (ko) 2023-06-01
WO2015194178A1 (en) 2015-12-23
SG11201610342YA (en) 2017-01-27
CN106663624A (zh) 2017-05-10
US9892932B2 (en) 2018-02-13
CN106663624B (zh) 2020-08-14
US10720335B2 (en) 2020-07-21

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