KR102444697B1 - Tsv/mems/전력 장치 식각용 화학품 - Google Patents

Tsv/mems/전력 장치 식각용 화학품 Download PDF

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Publication number
KR102444697B1
KR102444697B1 KR1020177000840A KR20177000840A KR102444697B1 KR 102444697 B1 KR102444697 B1 KR 102444697B1 KR 1020177000840 A KR1020177000840 A KR 1020177000840A KR 20177000840 A KR20177000840 A KR 20177000840A KR 102444697 B1 KR102444697 B1 KR 102444697B1
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etching
hydrogen
fluid
silicon
polymer deposition
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KR20170020434A (ko
Inventor
펑 셴
크리스티안 뒤사랫
커티스 앤더슨
라훌 굽타
빈센트 엠. 오마르지
네이던 스태포드
Original Assignee
레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드
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Application filed by 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 filed Critical 레르 리키드 쏘시에떼 아노님 뿌르 레드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드
Priority to KR1020227030041A priority Critical patent/KR102539241B1/ko
Publication of KR20170020434A publication Critical patent/KR20170020434A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
    • H01L21/02315—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
    • H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
KR1020177000840A 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품 Active KR102444697B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020227030041A KR102539241B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18
PCT/JP2015/003044 WO2015194178A1 (en) 2014-06-18 2015-06-17 Chemistries for tsv/mems/power device etching

Related Child Applications (1)

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KR1020227030041A Division KR102539241B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

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KR20170020434A KR20170020434A (ko) 2017-02-22
KR102444697B1 true KR102444697B1 (ko) 2022-09-16

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KR1020177000840A Active KR102444697B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품
KR1020227030041A Active KR102539241B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품
KR1020237017666A Active KR102679289B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

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KR1020237017666A Active KR102679289B1 (ko) 2014-06-18 2015-06-17 Tsv/mems/전력 장치 식각용 화학품

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US (3) US9892932B2 (enExample)
EP (1) EP3158579A4 (enExample)
JP (1) JP6485972B2 (enExample)
KR (3) KR102444697B1 (enExample)
CN (2) CN111816559B (enExample)
SG (1) SG11201610342YA (enExample)
TW (3) TWI658509B (enExample)
WO (1) WO2015194178A1 (enExample)

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JP6587580B2 (ja) * 2016-06-10 2019-10-09 東京エレクトロン株式会社 エッチング処理方法
JP7036799B2 (ja) * 2017-04-06 2022-03-15 関東電化工業株式会社 ドライエッチングガス組成物及びドライエッチング方法
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TWI757545B (zh) * 2017-09-15 2022-03-11 日商關東電化工業股份有限公司 使用酸鹵化物之原子層蝕刻
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KR102504833B1 (ko) * 2017-11-16 2023-03-02 삼성전자 주식회사 식각 가스 혼합물과 이를 이용한 패턴 형성 방법과 집적회로 소자의 제조 방법
JP7145031B2 (ja) * 2017-12-25 2022-09-30 東京エレクトロン株式会社 基板を処理する方法、プラズマ処理装置、及び基板処理装置
KR102450580B1 (ko) 2017-12-22 2022-10-07 삼성전자주식회사 금속 배선 하부의 절연층 구조를 갖는 반도체 장치
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WO2021090516A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
SG10202010798QA (en) * 2019-11-08 2021-06-29 Tokyo Electron Ltd Etching method and plasma processing apparatus
US11456180B2 (en) 2019-11-08 2022-09-27 Tokyo Electron Limited Etching method
JP6990799B2 (ja) * 2019-11-08 2022-02-03 東京エレクトロン株式会社 エッチング方法、プラズマ処理装置、処理ガス、デバイスの製造方法、プログラム、及び記憶媒体
CN112786441A (zh) 2019-11-08 2021-05-11 东京毅力科创株式会社 蚀刻方法及等离子体处理装置
KR102389081B1 (ko) * 2020-04-06 2022-04-20 아주대학교산학협력단 PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법
KR102388963B1 (ko) * 2020-05-07 2022-04-20 아주대학교산학협력단 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법
KR102244862B1 (ko) * 2020-08-04 2021-04-27 (주)원익머트리얼즈 식각 가스 혼합물과 이를 이용한 패턴 형성 방법
KR20230079304A (ko) * 2020-10-05 2023-06-07 에스피피 테크놀로지스 컴퍼니 리미티드 플라스마 처리용 가스, 플라스마 처리 방법 및 플라스마 처리 장치
JP7775835B2 (ja) * 2020-10-15 2025-11-26 株式会社レゾナック エッチングガス及びその製造方法、並びに、エッチング方法、半導体素子の製造方法
US20230373889A1 (en) * 2020-10-15 2023-11-23 Resonac Corporation Method for storing fluoro-2-butene
US20230373888A1 (en) * 2020-10-15 2023-11-23 Resonac Corporation Method for storing fluoro-2-butene
CN116348438A (zh) * 2020-10-15 2023-06-27 株式会社力森诺科 氟丁烯的保存方法
JPWO2022080274A1 (enExample) * 2020-10-15 2022-04-21
CN116997997A (zh) * 2021-03-30 2023-11-03 东京毅力科创株式会社 蚀刻方法和蚀刻装置
WO2025182815A1 (ja) * 2024-02-27 2025-09-04 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
JP7737066B1 (ja) 2024-03-01 2025-09-10 ダイキン工業株式会社 デポジションガス

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US10103031B2 (en) 2018-10-16
TW202030312A (zh) 2020-08-16
TWI733431B (zh) 2021-07-11
CN111816559A (zh) 2020-10-23
WO2015194178A1 (en) 2015-12-23
TWI658509B (zh) 2019-05-01
KR20230079491A (ko) 2023-06-07
CN106663624B (zh) 2020-08-14
CN111816559B (zh) 2024-06-11
KR20170020434A (ko) 2017-02-22
KR102679289B1 (ko) 2024-06-27
US10720335B2 (en) 2020-07-21
SG11201610342YA (en) 2017-01-27
KR20220124825A (ko) 2022-09-14
US9892932B2 (en) 2018-02-13
CN106663624A (zh) 2017-05-10
US20170103901A1 (en) 2017-04-13
US20180076046A1 (en) 2018-03-15
US20180366336A1 (en) 2018-12-20
KR102539241B1 (ko) 2023-06-01
EP3158579A1 (en) 2017-04-26
JP2017518645A (ja) 2017-07-06
TW201929071A (zh) 2019-07-16
EP3158579A4 (en) 2018-02-21
TW201606867A (zh) 2016-02-16
TWI695423B (zh) 2020-06-01
JP6485972B2 (ja) 2019-03-20

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