TWI695423B - 用於tsv/mems/功率元件蝕刻的化學物質 - Google Patents

用於tsv/mems/功率元件蝕刻的化學物質 Download PDF

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TWI695423B
TWI695423B TW108109359A TW108109359A TWI695423B TW I695423 B TWI695423 B TW I695423B TW 108109359 A TW108109359 A TW 108109359A TW 108109359 A TW108109359 A TW 108109359A TW I695423 B TWI695423 B TW I695423B
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Taiwan
Prior art keywords
etching
fluid
silicon
hydrogen
aspect ratio
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TW108109359A
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English (en)
Chinese (zh)
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TW201929071A (zh
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沈鵬
克里斯均 杜薩拉特
柯堤斯 安德森
拉胡爾 古普塔
維森 M 歐馬吉
納森 斯塔福德
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法商液態空氣喬治斯克勞帝方法研究開發股份有限公司
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    • H10P50/244
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW108109359A 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質 TWI695423B (zh)

Applications Claiming Priority (2)

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US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18

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TW201929071A TW201929071A (zh) 2019-07-16
TWI695423B true TWI695423B (zh) 2020-06-01

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TW108109359A TWI695423B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質
TW109114840A TWI733431B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質
TW104119063A TWI658509B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質

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TW109114840A TWI733431B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質
TW104119063A TWI658509B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質

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US (3) US9892932B2 (enExample)
EP (1) EP3158579A4 (enExample)
JP (1) JP6485972B2 (enExample)
KR (3) KR102444697B1 (enExample)
CN (2) CN111816559B (enExample)
SG (1) SG11201610342YA (enExample)
TW (3) TWI695423B (enExample)
WO (1) WO2015194178A1 (enExample)

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KR20230161474A (ko) * 2021-03-30 2023-11-27 도쿄엘렉트론가부시키가이샤 에칭 방법 및 에칭 장치
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EP3158579A4 (en) 2018-02-21
KR102679289B1 (ko) 2024-06-27
US10103031B2 (en) 2018-10-16
CN106663624A (zh) 2017-05-10
US9892932B2 (en) 2018-02-13
TWI733431B (zh) 2021-07-11
EP3158579A1 (en) 2017-04-26
TWI658509B (zh) 2019-05-01
TW202030312A (zh) 2020-08-16
CN111816559B (zh) 2024-06-11
US20180076046A1 (en) 2018-03-15
WO2015194178A1 (en) 2015-12-23
JP6485972B2 (ja) 2019-03-20
US10720335B2 (en) 2020-07-21
US20170103901A1 (en) 2017-04-13
US20180366336A1 (en) 2018-12-20
JP2017518645A (ja) 2017-07-06
SG11201610342YA (en) 2017-01-27
KR20220124825A (ko) 2022-09-14
TW201606867A (zh) 2016-02-16
TW201929071A (zh) 2019-07-16
CN111816559A (zh) 2020-10-23
KR102539241B1 (ko) 2023-06-01
CN106663624B (zh) 2020-08-14
KR102444697B1 (ko) 2022-09-16
KR20230079491A (ko) 2023-06-07
KR20170020434A (ko) 2017-02-22

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