CN111816559B - 用于tsv/mems/功率器件蚀刻的化学物质 - Google Patents

用于tsv/mems/功率器件蚀刻的化学物质 Download PDF

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Publication number
CN111816559B
CN111816559B CN202010698443.8A CN202010698443A CN111816559B CN 111816559 B CN111816559 B CN 111816559B CN 202010698443 A CN202010698443 A CN 202010698443A CN 111816559 B CN111816559 B CN 111816559B
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silicon
etching
holes
fluid
hydrogen
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Chinese (zh)
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CN111816559A (zh
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沈鹏
克里斯汀·杜斯拉特
柯蒂斯·安德森
拉胡尔·古普塔
文森特·M·欧马杰
南森·斯塔福德
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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LAir Liquide SA pour lEtude et lExploitation des Procedes Georges Claude
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Plasma & Fusion (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
CN202010698443.8A 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质 Active CN111816559B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010698443.8A CN111816559B (zh) 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18
CN202010698443.8A CN111816559B (zh) 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质
PCT/JP2015/003044 WO2015194178A1 (en) 2014-06-18 2015-06-17 Chemistries for tsv/mems/power device etching
CN201580031726.4A CN106663624B (zh) 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质

Related Parent Applications (1)

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CN111816559A CN111816559A (zh) 2020-10-23
CN111816559B true CN111816559B (zh) 2024-06-11

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CN201580031726.4A Active CN106663624B (zh) 2014-06-18 2015-06-17 用于tsv/mems/功率器件蚀刻的化学物质

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US (3) US9892932B2 (enExample)
EP (1) EP3158579A4 (enExample)
JP (1) JP6485972B2 (enExample)
KR (3) KR102679289B1 (enExample)
CN (2) CN111816559B (enExample)
SG (1) SG11201610342YA (enExample)
TW (3) TWI733431B (enExample)
WO (1) WO2015194178A1 (enExample)

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WO2020008703A1 (ja) * 2019-04-19 2020-01-09 株式会社日立ハイテクノロジーズ プラズマ処理方法
US11456180B2 (en) 2019-11-08 2022-09-27 Tokyo Electron Limited Etching method
SG10202010798QA (en) * 2019-11-08 2021-06-29 Tokyo Electron Ltd Etching method and plasma processing apparatus
CN112786441A (zh) 2019-11-08 2021-05-11 东京毅力科创株式会社 蚀刻方法及等离子体处理装置
KR102401025B1 (ko) * 2019-11-08 2022-05-24 도쿄엘렉트론가부시키가이샤 에칭 방법
WO2021090516A1 (ja) * 2019-11-08 2021-05-14 東京エレクトロン株式会社 エッチング方法
KR102389081B1 (ko) * 2020-04-06 2022-04-20 아주대학교산학협력단 PIPVE(perfluoroisopropyl vinyl ether)를 이용한 플라즈마 식각 방법
KR102388963B1 (ko) * 2020-05-07 2022-04-20 아주대학교산학협력단 퍼플루오로프로필카비놀(Perfluoropropyl carbinol)을 이용한 플라즈마 식각 방법
KR102244862B1 (ko) * 2020-08-04 2021-04-27 (주)원익머트리얼즈 식각 가스 혼합물과 이를 이용한 패턴 형성 방법
CN115699264A (zh) * 2020-10-05 2023-02-03 Spp科技股份有限公司 等离子体处理用气体、等离子体处理方法及等离子体处理装置
EP4231333A4 (en) * 2020-10-15 2024-11-13 Resonac Corporation ETCHING GAS, METHOD FOR PRODUCING SAME, ETCHING METHOD AND METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT
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WO2022080276A1 (ja) * 2020-10-15 2022-04-21 昭和電工株式会社 フルオロ－２－ブテンの保管方法
JPWO2022080275A1 (enExample) * 2020-10-15 2022-04-21
US20240018075A1 (en) * 2020-10-15 2024-01-18 Resonac Corporation Method for storing fluorobutene
JP7724281B2 (ja) * 2021-03-30 2025-08-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2025182815A1 (ja) * 2024-02-27 2025-09-04 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
WO2025183152A1 (ja) * 2024-03-01 2025-09-04 ダイキン工業株式会社 デポジションガス

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US20170103901A1 (en) 2017-04-13
US20180366336A1 (en) 2018-12-20
US9892932B2 (en) 2018-02-13
KR102679289B1 (ko) 2024-06-27
TWI733431B (zh) 2021-07-11
TW201929071A (zh) 2019-07-16
CN111816559A (zh) 2020-10-23
SG11201610342YA (en) 2017-01-27
TWI658509B (zh) 2019-05-01
JP2017518645A (ja) 2017-07-06
US10720335B2 (en) 2020-07-21
EP3158579A4 (en) 2018-02-21
US10103031B2 (en) 2018-10-16
TWI695423B (zh) 2020-06-01
EP3158579A1 (en) 2017-04-26
TW202030312A (zh) 2020-08-16
KR20230079491A (ko) 2023-06-07
JP6485972B2 (ja) 2019-03-20
WO2015194178A1 (en) 2015-12-23
TW201606867A (zh) 2016-02-16
KR102539241B1 (ko) 2023-06-01
CN106663624A (zh) 2017-05-10
CN106663624B (zh) 2020-08-14
KR20170020434A (ko) 2017-02-22
US20180076046A1 (en) 2018-03-15
KR20220124825A (ko) 2022-09-14
KR102444697B1 (ko) 2022-09-16

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