TWI733431B - 用於tsv/mems/功率元件蝕刻的化學物質 - Google Patents

用於tsv/mems/功率元件蝕刻的化學物質 Download PDF

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TWI733431B
TWI733431B TW109114840A TW109114840A TWI733431B TW I733431 B TWI733431 B TW I733431B TW 109114840 A TW109114840 A TW 109114840A TW 109114840 A TW109114840 A TW 109114840A TW I733431 B TWI733431 B TW I733431B
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Taiwan
Prior art keywords
etching
fluid
silicon
hydrogen
containing polymer
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TW109114840A
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English (en)
Chinese (zh)
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TW202030312A (zh
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沈鵬
克里斯均 杜薩拉特
柯堤斯 安德森
拉胡爾 古普塔
維森 Ｍ 歐馬吉
納森 斯塔福德
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法商液態空氣喬治斯克勞帝方法研究開發股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H10P50/244—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials comprising alternated and repeated etching and passivation steps
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • ing And Chemical Polishing (AREA)
TW109114840A 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質 TWI733431B (zh)

Applications Claiming Priority (2)

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US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18

Publications (2)

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TW202030312A TW202030312A (zh) 2020-08-16
TWI733431B true TWI733431B (zh) 2021-07-11

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TW109114840A TWI733431B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質
TW104119063A TWI658509B (zh) 2014-06-18 2015-06-12 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質
TW108109359A TWI695423B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質

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TW104119063A TWI658509B (zh) 2014-06-18 2015-06-12 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質
TW108109359A TWI695423B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質

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US (3) US9892932B2 (enExample)
EP (1) EP3158579A4 (enExample)
JP (1) JP6485972B2 (enExample)
KR (3) KR102444697B1 (enExample)
CN (2) CN106663624B (enExample)
SG (1) SG11201610342YA (enExample)
TW (3) TWI733431B (enExample)
WO (1) WO2015194178A1 (enExample)

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JP7724281B2 (ja) * 2021-03-30 2025-08-15 東京エレクトロン株式会社 エッチング方法及びエッチング装置
TWI906294B (zh) * 2021-05-07 2025-12-01 日商東京威力科創股份有限公司 蝕刻方法及蝕刻裝置
JP7679464B2 (ja) 2021-05-07 2025-05-19 東京エレクトロン株式会社 エッチング方法及びエッチング装置
KR102915159B1 (ko) * 2021-05-07 2026-01-20 도쿄엘렉트론가부시키가이샤 기판 처리 방법 및 기판 처리 장치
WO2025182815A1 (ja) * 2024-02-27 2025-09-04 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
TW202548079A (zh) 2024-03-01 2025-12-16 日商大金工業股份有限公司 沉積氣體
WO2025258395A1 (ja) * 2024-06-11 2025-12-18 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
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KR102679289B1 (ko) 2024-06-27
JP2017518645A (ja) 2017-07-06
US10103031B2 (en) 2018-10-16
TWI695423B (zh) 2020-06-01
US20170103901A1 (en) 2017-04-13
CN111816559B (zh) 2024-06-11
EP3158579A4 (en) 2018-02-21
TW201929071A (zh) 2019-07-16
KR102444697B1 (ko) 2022-09-16
US20180076046A1 (en) 2018-03-15
CN111816559A (zh) 2020-10-23
TWI658509B (zh) 2019-05-01
KR20170020434A (ko) 2017-02-22
JP6485972B2 (ja) 2019-03-20
US20180366336A1 (en) 2018-12-20
TW202030312A (zh) 2020-08-16
KR20220124825A (ko) 2022-09-14
KR20230079491A (ko) 2023-06-07
TW201606867A (zh) 2016-02-16
EP3158579A1 (en) 2017-04-26
KR102539241B1 (ko) 2023-06-01
WO2015194178A1 (en) 2015-12-23
SG11201610342YA (en) 2017-01-27
CN106663624A (zh) 2017-05-10
US9892932B2 (en) 2018-02-13
CN106663624B (zh) 2020-08-14
US10720335B2 (en) 2020-07-21

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