TWI733431B - 用於tsv/mems/功率元件蝕刻的化學物質 - Google Patents

用於tsv/mems/功率元件蝕刻的化學物質 Download PDF

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Publication number
TWI733431B
TWI733431B TW109114840A TW109114840A TWI733431B TW I733431 B TWI733431 B TW I733431B TW 109114840 A TW109114840 A TW 109114840A TW 109114840 A TW109114840 A TW 109114840A TW I733431 B TWI733431 B TW I733431B
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Taiwan
Prior art keywords
etching
fluid
silicon
hydrogen
containing polymer
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TW109114840A
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English (en)
Chinese (zh)
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TW202030312A (zh
Inventor
沈鵬
克里斯均 杜薩拉特
柯堤斯 安德森
拉胡爾 古普塔
維森 Ｍ 歐馬吉
納森 斯塔福德
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法商液態空氣喬治斯克勞帝方法研究開發股份有限公司
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    • H10P50/244—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Micromachines (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
TW109114840A 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質 TWI733431B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462013959P 2014-06-18 2014-06-18
US62/013,959 2014-06-18

Publications (2)

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TW202030312A TW202030312A (zh) 2020-08-16
TWI733431B true TWI733431B (zh) 2021-07-11

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TW109114840A TWI733431B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質
TW104119063A TWI658509B (zh) 2014-06-18 2015-06-12 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質
TW108109359A TWI695423B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質

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TW104119063A TWI658509B (zh) 2014-06-18 2015-06-12 用於ｔｓｖ／ｍｅｍｓ／功率元件蝕刻的化學物質
TW108109359A TWI695423B (zh) 2014-06-18 2015-06-12 用於tsv/mems/功率元件蝕刻的化學物質

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US (3) US9892932B2 (enExample)
EP (1) EP3158579A4 (enExample)
JP (1) JP6485972B2 (enExample)
KR (3) KR102539241B1 (enExample)
CN (2) CN106663624B (enExample)
SG (1) SG11201610342YA (enExample)
TW (3) TWI733431B (enExample)
WO (1) WO2015194178A1 (enExample)

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KR20230066089A (ko) * 2020-10-15 2023-05-12 가부시끼가이샤 레조낙 플루오로-2-부텐의 보관 방법
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KR20230161474A (ko) * 2021-03-30 2023-11-27 도쿄엘렉트론가부시키가이샤 에칭 방법 및 에칭 장치
JP7679464B2 (ja) 2021-05-07 2025-05-19 東京エレクトロン株式会社 エッチング方法及びエッチング装置
WO2025182815A1 (ja) * 2024-02-27 2025-09-04 セントラル硝子株式会社 エッチング方法、半導体デバイスの製造方法、エッチング装置及びエッチングガス組成物
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Also Published As

Publication number Publication date
TW201929071A (zh) 2019-07-16
KR102539241B1 (ko) 2023-06-01
JP2017518645A (ja) 2017-07-06
US20180076046A1 (en) 2018-03-15
CN111816559A (zh) 2020-10-23
TWI658509B (zh) 2019-05-01
CN106663624B (zh) 2020-08-14
US10720335B2 (en) 2020-07-21
TW202030312A (zh) 2020-08-16
KR102679289B1 (ko) 2024-06-27
US20180366336A1 (en) 2018-12-20
TWI695423B (zh) 2020-06-01
JP6485972B2 (ja) 2019-03-20
TW201606867A (zh) 2016-02-16
CN111816559B (zh) 2024-06-11
US10103031B2 (en) 2018-10-16
EP3158579A4 (en) 2018-02-21
SG11201610342YA (en) 2017-01-27
KR102444697B1 (ko) 2022-09-16
KR20170020434A (ko) 2017-02-22
EP3158579A1 (en) 2017-04-26
KR20230079491A (ko) 2023-06-07
CN106663624A (zh) 2017-05-10
US9892932B2 (en) 2018-02-13
WO2015194178A1 (en) 2015-12-23
US20170103901A1 (en) 2017-04-13
KR20220124825A (ko) 2022-09-14

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