KR102565020B1 - 성막장치 - Google Patents

성막장치 Download PDF

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Publication number
KR102565020B1
KR102565020B1 KR1020187003080A KR20187003080A KR102565020B1 KR 102565020 B1 KR102565020 B1 KR 102565020B1 KR 1020187003080 A KR1020187003080 A KR 1020187003080A KR 20187003080 A KR20187003080 A KR 20187003080A KR 102565020 B1 KR102565020 B1 KR 102565020B1
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KR
South Korea
Prior art keywords
film
film formation
plasma
chamber
vacuum chamber
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KR1020187003080A
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English (en)
Korean (ko)
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KR20180034463A (ko
Inventor
히사시 키타미
토시유키 사케미
테쯔야 야마모토
쥰이치 노모토
Original Assignee
스미도모쥬기가이고교 가부시키가이샤
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Priority to KR1020207008153A priority Critical patent/KR102573358B1/ko
Priority claimed from PCT/JP2016/071438 external-priority patent/WO2017014278A1/ja
Publication of KR20180034463A publication Critical patent/KR20180034463A/ko
Application granted granted Critical
Publication of KR102565020B1 publication Critical patent/KR102565020B1/ko
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physical Vapour Deposition (AREA)
KR1020187003080A 2015-07-21 2016-07-21 성막장치 Active KR102565020B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020207008153A KR102573358B1 (ko) 2015-07-21 2016-07-21 음이온생성장치

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2015143798 2015-07-21
JPJP-P-2015-143798 2015-07-21
JP2016046649A JP6584982B2 (ja) 2015-07-21 2016-03-10 成膜装置
JPJP-P-2016-046649 2016-03-10
PCT/JP2016/071438 WO2017014278A1 (ja) 2015-07-21 2016-07-21 成膜装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020207008153A Division KR102573358B1 (ko) 2015-07-21 2016-07-21 음이온생성장치

Publications (2)

Publication Number Publication Date
KR20180034463A KR20180034463A (ko) 2018-04-04
KR102565020B1 true KR102565020B1 (ko) 2023-08-07

Family

ID=57945589

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187003080A Active KR102565020B1 (ko) 2015-07-21 2016-07-21 성막장치

Country Status (3)

Country Link
JP (1) JP6584982B2 (enrdf_load_stackoverflow)
KR (1) KR102565020B1 (enrdf_load_stackoverflow)
CN (1) CN107849690B (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7185487B2 (ja) * 2018-03-14 2022-12-07 住友重機械工業株式会社 負イオン生成装置
JP7125789B2 (ja) 2018-06-14 2022-08-25 国立大学法人京都工芸繊維大学 特定種イオン源およびプラズマ成膜装置
JP7120540B2 (ja) * 2018-06-26 2022-08-17 住友重機械工業株式会社 イオン照射装置、イオン照射方法、成膜装置、及び成膜方法
JP7246628B2 (ja) * 2018-06-26 2023-03-28 住友重機械工業株式会社 成膜・イオン照射システム、及び成膜・イオン照射方法
JP7316770B2 (ja) * 2018-09-03 2023-07-28 住友重機械工業株式会社 成膜装置、及び膜構造体の製造装置
JP7336863B2 (ja) 2019-03-28 2023-09-01 住友重機械工業株式会社 負イオン生成装置
JP7209572B2 (ja) * 2019-03-28 2023-01-20 住友重機械工業株式会社 負イオン生成装置
JP7313929B2 (ja) * 2019-06-26 2023-07-25 住友重機械工業株式会社 負イオン照射装置
KR102757114B1 (ko) 2019-07-08 2025-01-17 스미도모쥬기가이고교 가부시키가이샤 부이온생성장치
TWI756742B (zh) * 2019-07-09 2022-03-01 日商住友重機械工業股份有限公司 負離子生成裝置
TWI700967B (zh) * 2019-07-09 2020-08-01 日商住友重機械工業股份有限公司 負離子生成裝置
CN112226734A (zh) * 2019-07-15 2021-01-15 住友重机械工业株式会社 负离子生成装置
KR102180979B1 (ko) * 2019-08-19 2020-11-19 참엔지니어링(주) 처리 장치 및 방법
JP7349910B2 (ja) 2019-12-27 2023-09-25 住友重機械工業株式会社 負イオン生成装置、及び負イオン生成方法
JP7404119B2 (ja) 2020-03-19 2023-12-25 住友重機械工業株式会社 負イオン生成装置
JP7518690B2 (ja) 2020-07-29 2024-07-18 住友重機械工業株式会社 プラズマガン、成膜装置、及び負イオン生成装置
US11915910B2 (en) 2021-03-25 2024-02-27 Tokyo Electron Limited Fast neutral generation for plasma processing

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS571586B2 (enrdf_load_stackoverflow) * 1974-05-22 1982-01-12
JPH0674767B2 (ja) * 1984-07-18 1994-09-21 富士重工業株式会社 エンジンのアイドル回転数制御方法
JPH0417669A (ja) * 1990-05-08 1992-01-22 Jeol Ltd プラズマを用いた成膜方法およびｒｆイオンプレーティング装置
JPH06128732A (ja) * 1992-10-15 1994-05-10 Ricoh Co Ltd 薄膜形成装置および薄膜形成方法
JPH0980200A (ja) * 1995-09-08 1997-03-28 Nissin Electric Co Ltd イオン発生装置
JP2823834B2 (ja) * 1996-03-28 1998-11-11 中外炉工業株式会社 蒸着装置におけるるつぼ部機構
JPH11273894A (ja) * 1998-03-23 1999-10-08 Jeol Ltd 薄膜形成装置
JP2000282226A (ja) 1999-04-01 2000-10-10 Nippon Sheet Glass Co Ltd 真空成膜装置及び方法
JP3765990B2 (ja) * 2001-03-16 2006-04-12 住友重機械工業株式会社 導体の形成方法及び装置
JP4339562B2 (ja) * 2002-09-06 2009-10-07 住友重機械工業株式会社 イオンプレーティング方法およびその装置
CN101298667A (zh) * 2003-01-31 2008-11-05 东京毅力科创株式会社 半导体处理用的成膜方法
JP4613050B2 (ja) * 2004-11-04 2011-01-12 大日本印刷株式会社 圧力勾配型イオンプレーティング式成膜装置
CN203049026U (zh) * 2013-01-23 2013-07-10 中国科学院金属研究所 一种低温低损伤多功能复合镀膜的装置
JP5951542B2 (ja) * 2013-03-28 2016-07-13 住友重機械工業株式会社 成膜装置

Also Published As

Publication number Publication date
KR20180034463A (ko) 2018-04-04
JP6584982B2 (ja) 2019-10-02
JP2017025407A (ja) 2017-02-02
CN107849690B (zh) 2020-02-18
CN107849690A (zh) 2018-03-27

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