KR102544302B1 - 밴드갭 레퍼런스 회로 - Google Patents

밴드갭 레퍼런스 회로 Download PDF

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Publication number
KR102544302B1
KR102544302B1 KR1020180130627A KR20180130627A KR102544302B1 KR 102544302 B1 KR102544302 B1 KR 102544302B1 KR 1020180130627 A KR1020180130627 A KR 1020180130627A KR 20180130627 A KR20180130627 A KR 20180130627A KR 102544302 B1 KR102544302 B1 KR 102544302B1
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South Korea
Prior art keywords
current
node
resistance element
variable resistance
power supply
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KR1020180130627A
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English (en)
Korean (ko)
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KR20190049551A (ko
Inventor
야스히코 소네
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시냅틱스 인코포레이티드
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current 
    • G05F1/46—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC
    • G05F1/468—Regulating voltage or current  wherein the variable actually regulated by the final control device is DC characterised by reference voltage circuitry, e.g. soft start, remote shutdown
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/262—Current mirrors using field-effect transistors only

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
KR1020180130627A 2017-10-31 2018-10-30 밴드갭 레퍼런스 회로 Active KR102544302B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2017-211132 2017-10-31
JP2017211132A JP7086562B2 (ja) 2017-10-31 2017-10-31 バンドギャップリファレンス回路

Publications (2)

Publication Number Publication Date
KR20190049551A KR20190049551A (ko) 2019-05-09
KR102544302B1 true KR102544302B1 (ko) 2023-06-15

Family

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KR1020180130627A Active KR102544302B1 (ko) 2017-10-31 2018-10-30 밴드갭 레퍼런스 회로

Country Status (4)

Country Link
US (1) US10379567B2 (enExample)
JP (1) JP7086562B2 (enExample)
KR (1) KR102544302B1 (enExample)
CN (1) CN109725676A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109725672B (zh) * 2018-09-05 2023-09-08 南京浣轩半导体有限公司 一种带隙基准电路及高阶温度补偿方法
US10585447B1 (en) * 2018-11-09 2020-03-10 Dialog Semiconductor (Uk) Limited Voltage generator
CN112596576B (zh) * 2020-11-19 2024-02-02 北京智芯微电子科技有限公司 带隙基准电路
TWI783563B (zh) * 2021-07-07 2022-11-11 新唐科技股份有限公司 參考電流/電壓產生器與電路系統
US12481304B2 (en) * 2022-07-05 2025-11-25 Mediatek Inc. Bandgap circuit with adaptive start-up design

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050110476A1 (en) * 2003-11-26 2005-05-26 Debanjan Mukherjee Trimmable bandgap voltage reference
JP2014086000A (ja) * 2012-10-26 2014-05-12 Sony Corp 基準電圧発生回路

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4345152B2 (ja) 1999-01-14 2009-10-14 ソニー株式会社 起動回路およびそれを用いた電圧供給回路
US6501256B1 (en) * 2001-06-29 2002-12-31 Intel Corporation Trimmable bandgap voltage reference
KR100560652B1 (ko) * 2003-01-14 2006-03-16 삼성전자주식회사 전원 전압과 온도 변화에 둔감한 온도 검출 회로
CN100543632C (zh) * 2003-08-15 2009-09-23 Idt-紐威技术有限公司 采用cmos技术中电流模式技术的精确电压/电流参考电路
JP2006133916A (ja) * 2004-11-02 2006-05-25 Nec Electronics Corp 基準電圧回路
US7514987B2 (en) * 2005-11-16 2009-04-07 Mediatek Inc. Bandgap reference circuits
JP2007192718A (ja) 2006-01-20 2007-08-02 Oki Electric Ind Co Ltd 温度センサ
US20080106247A1 (en) * 2006-11-06 2008-05-08 Virgil Ioan Gheorghiu Trimmed current mirror
US7834610B2 (en) * 2007-06-01 2010-11-16 Faraday Technology Corp. Bandgap reference circuit
JP2009217809A (ja) 2008-02-12 2009-09-24 Seiko Epson Corp 基準電圧生成回路、集積回路装置および信号処理装置
JP5285371B2 (ja) 2008-09-22 2013-09-11 セイコーインスツル株式会社 バンドギャップ基準電圧回路
CN101813960B (zh) * 2010-01-20 2013-10-23 香港应用科技研究院有限公司 一个精确的带隙基准源的双向微调方法和电路
US8638084B1 (en) * 2010-10-22 2014-01-28 Xilinx, Inc. Bandgap bias circuit compenastion using a current density range and resistive loads
JP5547684B2 (ja) 2011-05-19 2014-07-16 旭化成エレクトロニクス株式会社 バンドギャップリファレンス回路
JP5535154B2 (ja) 2011-09-02 2014-07-02 株式会社東芝 基準信号発生回路
JP2013058155A (ja) 2011-09-09 2013-03-28 Seiko Instruments Inc 基準電圧回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050110476A1 (en) * 2003-11-26 2005-05-26 Debanjan Mukherjee Trimmable bandgap voltage reference
JP2014086000A (ja) * 2012-10-26 2014-05-12 Sony Corp 基準電圧発生回路

Also Published As

Publication number Publication date
KR20190049551A (ko) 2019-05-09
JP2019082951A (ja) 2019-05-30
US20190129461A1 (en) 2019-05-02
JP7086562B2 (ja) 2022-06-20
US10379567B2 (en) 2019-08-13
CN109725676A (zh) 2019-05-07

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