JP7086562B2 - バンドギャップリファレンス回路 - Google Patents

バンドギャップリファレンス回路 Download PDF

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Publication number
JP7086562B2
JP7086562B2 JP2017211132A JP2017211132A JP7086562B2 JP 7086562 B2 JP7086562 B2 JP 7086562B2 JP 2017211132 A JP2017211132 A JP 2017211132A JP 2017211132 A JP2017211132 A JP 2017211132A JP 7086562 B2 JP7086562 B2 JP 7086562B2
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Japan
Prior art keywords
current
node
resistance element
variable resistance
bandgap reference
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JP2017211132A
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English (en)
Japanese (ja)
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JP2019082951A (ja
JP2019082951A5 (enExample
Inventor
康彦 曽根
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シナプティクス インコーポレイテッド
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Priority to JP2017211132A priority Critical patent/JP7086562B2/ja
Priority to US16/173,814 priority patent/US10379567B2/en
Priority to KR1020180130627A priority patent/KR102544302B1/ko
Priority to CN201811276533.7A priority patent/CN109725676A/zh
Publication of JP2019082951A publication Critical patent/JP2019082951A/ja
Publication of JP2019082951A5 publication Critical patent/JP2019082951A5/ja
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/267—Current mirrors using both bipolar and field-effect technology
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/225—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage producing a current or voltage as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is DC
    • G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Control Of Electrical Variables (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
JP2017211132A 2017-10-31 2017-10-31 バンドギャップリファレンス回路 Active JP7086562B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2017211132A JP7086562B2 (ja) 2017-10-31 2017-10-31 バンドギャップリファレンス回路
US16/173,814 US10379567B2 (en) 2017-10-31 2018-10-29 Bandgap reference circuitry
KR1020180130627A KR102544302B1 (ko) 2017-10-31 2018-10-30 밴드갭 레퍼런스 회로
CN201811276533.7A CN109725676A (zh) 2017-10-31 2018-10-30 带隙参考电路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017211132A JP7086562B2 (ja) 2017-10-31 2017-10-31 バンドギャップリファレンス回路

Publications (3)

Publication Number Publication Date
JP2019082951A JP2019082951A (ja) 2019-05-30
JP2019082951A5 JP2019082951A5 (enExample) 2020-12-03
JP7086562B2 true JP7086562B2 (ja) 2022-06-20

Family

ID=66243810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017211132A Active JP7086562B2 (ja) 2017-10-31 2017-10-31 バンドギャップリファレンス回路

Country Status (4)

Country Link
US (1) US10379567B2 (enExample)
JP (1) JP7086562B2 (enExample)
KR (1) KR102544302B1 (enExample)
CN (1) CN109725676A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109725672B (zh) * 2018-09-05 2023-09-08 南京浣轩半导体有限公司 一种带隙基准电路及高阶温度补偿方法
US10585447B1 (en) * 2018-11-09 2020-03-10 Dialog Semiconductor (Uk) Limited Voltage generator
CN112596576B (zh) * 2020-11-19 2024-02-02 北京智芯微电子科技有限公司 带隙基准电路
TWI783563B (zh) * 2021-07-07 2022-11-11 新唐科技股份有限公司 參考電流/電壓產生器與電路系統
US12481304B2 (en) * 2022-07-05 2025-11-25 Mediatek Inc. Bandgap circuit with adaptive start-up design

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000267749A (ja) 1999-01-14 2000-09-29 Sony Corp 起動回路およびそれを用いた電圧供給回路
US20050110476A1 (en) 2003-11-26 2005-05-26 Debanjan Mukherjee Trimmable bandgap voltage reference
JP2007192718A (ja) 2006-01-20 2007-08-02 Oki Electric Ind Co Ltd 温度センサ
JP2009217809A (ja) 2008-02-12 2009-09-24 Seiko Epson Corp 基準電圧生成回路、集積回路装置および信号処理装置
JP2010073133A (ja) 2008-09-22 2010-04-02 Seiko Instruments Inc バンドギャップ基準電圧回路
JP2012243054A (ja) 2011-05-19 2012-12-10 Asahi Kasei Electronics Co Ltd バンドギャップリファレンス回路
JP2013054471A (ja) 2011-09-02 2013-03-21 Toshiba Corp 基準信号発生回路
JP2013058155A (ja) 2011-09-09 2013-03-28 Seiko Instruments Inc 基準電圧回路
JP2014086000A (ja) 2012-10-26 2014-05-12 Sony Corp 基準電圧発生回路

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6501256B1 (en) * 2001-06-29 2002-12-31 Intel Corporation Trimmable bandgap voltage reference
KR100560652B1 (ko) * 2003-01-14 2006-03-16 삼성전자주식회사 전원 전압과 온도 변화에 둔감한 온도 검출 회로
CN100543632C (zh) * 2003-08-15 2009-09-23 Idt-紐威技术有限公司 采用cmos技术中电流模式技术的精确电压/电流参考电路
JP2006133916A (ja) * 2004-11-02 2006-05-25 Nec Electronics Corp 基準電圧回路
US7514987B2 (en) * 2005-11-16 2009-04-07 Mediatek Inc. Bandgap reference circuits
US20080106247A1 (en) * 2006-11-06 2008-05-08 Virgil Ioan Gheorghiu Trimmed current mirror
US7834610B2 (en) * 2007-06-01 2010-11-16 Faraday Technology Corp. Bandgap reference circuit
CN101813960B (zh) * 2010-01-20 2013-10-23 香港应用科技研究院有限公司 一个精确的带隙基准源的双向微调方法和电路
US8638084B1 (en) * 2010-10-22 2014-01-28 Xilinx, Inc. Bandgap bias circuit compenastion using a current density range and resistive loads

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000267749A (ja) 1999-01-14 2000-09-29 Sony Corp 起動回路およびそれを用いた電圧供給回路
US20050110476A1 (en) 2003-11-26 2005-05-26 Debanjan Mukherjee Trimmable bandgap voltage reference
JP2007192718A (ja) 2006-01-20 2007-08-02 Oki Electric Ind Co Ltd 温度センサ
JP2009217809A (ja) 2008-02-12 2009-09-24 Seiko Epson Corp 基準電圧生成回路、集積回路装置および信号処理装置
JP2010073133A (ja) 2008-09-22 2010-04-02 Seiko Instruments Inc バンドギャップ基準電圧回路
JP2012243054A (ja) 2011-05-19 2012-12-10 Asahi Kasei Electronics Co Ltd バンドギャップリファレンス回路
JP2013054471A (ja) 2011-09-02 2013-03-21 Toshiba Corp 基準信号発生回路
JP2013058155A (ja) 2011-09-09 2013-03-28 Seiko Instruments Inc 基準電圧回路
JP2014086000A (ja) 2012-10-26 2014-05-12 Sony Corp 基準電圧発生回路

Also Published As

Publication number Publication date
KR20190049551A (ko) 2019-05-09
JP2019082951A (ja) 2019-05-30
KR102544302B1 (ko) 2023-06-15
US20190129461A1 (en) 2019-05-02
US10379567B2 (en) 2019-08-13
CN109725676A (zh) 2019-05-07

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