KR102531865B1 - 회전하는 기판의 레이저 어닐링 - Google Patents

회전하는 기판의 레이저 어닐링 Download PDF

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KR102531865B1
KR102531865B1 KR1020187005791A KR20187005791A KR102531865B1 KR 102531865 B1 KR102531865 B1 KR 102531865B1 KR 1020187005791 A KR1020187005791 A KR 1020187005791A KR 20187005791 A KR20187005791 A KR 20187005791A KR 102531865 B1 KR102531865 B1 KR 102531865B1
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substrate
reflector plate
laser source
radiation
source
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KR20180026789A (ko
Inventor
조셉 엠. 라니쉬
샤샨크 샤르마
디와카르 엔. 케들라야
아론 뮤어 헌터
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어플라이드 머티어리얼스, 인코포레이티드
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    • H01L21/324—
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H01L21/268—
    • H01L21/67098—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Recrystallisation Techniques (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020187005791A 2015-07-29 2016-07-19 회전하는 기판의 레이저 어닐링 Active KR102531865B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201562198556P 2015-07-29 2015-07-29
US62/198,556 2015-07-29
PCT/US2016/042954 WO2017019384A1 (en) 2015-07-29 2016-07-19 Rotating substrate laser anneal

Publications (2)

Publication Number Publication Date
KR20180026789A KR20180026789A (ko) 2018-03-13
KR102531865B1 true KR102531865B1 (ko) 2023-05-16

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KR1020187005791A Active KR102531865B1 (ko) 2015-07-29 2016-07-19 회전하는 기판의 레이저 어닐링

Country Status (8)

Country Link
US (1) US10256005B2 (https=)
EP (1) EP3329510B1 (https=)
JP (2) JP6985249B2 (https=)
KR (1) KR102531865B1 (https=)
CN (2) CN115527896B (https=)
DE (1) DE202016009128U1 (https=)
TW (2) TWI692012B (https=)
WO (1) WO2017019384A1 (https=)

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EP3329510B1 (en) * 2015-07-29 2022-04-13 Applied Materials, Inc. Rotating substrate laser anneal
US11171023B2 (en) * 2015-10-09 2021-11-09 Applied Materials, Inc. Diode laser for wafer heating for EPI processes
US10281335B2 (en) * 2017-05-26 2019-05-07 Applied Materials, Inc. Pulsed radiation sources for transmission pyrometry
JP7191504B2 (ja) * 2017-07-14 2022-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP2019021828A (ja) * 2017-07-20 2019-02-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN109935532B (zh) * 2017-12-15 2022-05-31 上海微电子装备（集团）股份有限公司 激光热处理装置和处理方法
CN112385028B (zh) * 2018-04-12 2024-06-25 玛特森技术公司 低热量预算退火
WO2019217180A1 (en) * 2018-05-08 2019-11-14 Lam Research Corporation Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner
JP7228990B2 (ja) * 2018-11-07 2023-02-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US11828656B2 (en) * 2020-11-20 2023-11-28 Applied Materials, Inc. Reflector plate for substrate processing
CN117242560A (zh) * 2021-04-29 2023-12-15 应用材料公司 用于快速热处理腔室的窗

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JP2010034491A (ja) * 2008-06-25 2010-02-12 Tokyo Electron Ltd アニール装置
JP2011124455A (ja) 2009-12-11 2011-06-23 Japan Steel Works Ltd:The 半導体基板の製造方法およびレーザアニール装置
US20150064933A1 (en) 2013-08-30 2015-03-05 Applied Materials, Inc. Crystallization of amorphous films and grain growth using combination of laser and rapid thermal annealing
JP2015115401A (ja) 2013-12-10 2015-06-22 三菱電機株式会社 レーザアニール方法およびレーザアニール装置

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JP2004193490A (ja) * 2002-12-13 2004-07-08 Seiko Epson Corp レーザー照射装置、レーザーの照射方法、及び半導体装置の製造方法
JP2010034491A (ja) * 2008-06-25 2010-02-12 Tokyo Electron Ltd アニール装置
JP2011124455A (ja) 2009-12-11 2011-06-23 Japan Steel Works Ltd:The 半導体基板の製造方法およびレーザアニール装置
US20150064933A1 (en) 2013-08-30 2015-03-05 Applied Materials, Inc. Crystallization of amorphous films and grain growth using combination of laser and rapid thermal annealing
JP2015115401A (ja) 2013-12-10 2015-06-22 三菱電機株式会社 レーザアニール方法およびレーザアニール装置

Also Published As

Publication number Publication date
JP2022043054A (ja) 2022-03-15
EP3329510B1 (en) 2022-04-13
TWI722722B (zh) 2021-03-21
TW201721723A (zh) 2017-06-16
CN107851580B (zh) 2022-10-18
US10256005B2 (en) 2019-04-09
DE202016009128U1 (de) 2022-07-25
KR20180026789A (ko) 2018-03-13
JP6985249B2 (ja) 2021-12-22
WO2017019384A1 (en) 2017-02-02
JP7462604B2 (ja) 2024-04-05
EP3329510A1 (en) 2018-06-06
CN107851580A (zh) 2018-03-27
CN115527896A (zh) 2022-12-27
JP2018526819A (ja) 2018-09-13
CN115527896B (zh) 2026-04-21
TW202029299A (zh) 2020-08-01
US20170032865A1 (en) 2017-02-02
TWI692012B (zh) 2020-04-21
EP3329510A4 (en) 2019-05-01

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