DE202016009128U1 - Laserglühen eines rotierenden Substrats - Google Patents

Laserglühen eines rotierenden Substrats Download PDF

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Publication number
DE202016009128U1
DE202016009128U1 DE202016009128.0U DE202016009128U DE202016009128U1 DE 202016009128 U1 DE202016009128 U1 DE 202016009128U1 DE 202016009128 U DE202016009128 U DE 202016009128U DE 202016009128 U1 DE202016009128 U1 DE 202016009128U1
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DE
Germany
Prior art keywords
substrate
radiation
reflector plate
laser source
source
Prior art date
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Active
Application number
DE202016009128.0U
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German (de)
English (en)
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Applied Materials Inc
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE202016009128U1 publication Critical patent/DE202016009128U1/de
Active legal-status Critical Current
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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Recrystallisation Techniques (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE202016009128.0U 2015-07-29 2016-07-19 Laserglühen eines rotierenden Substrats Active DE202016009128U1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562198556P 2015-07-29 2015-07-29
US62/198,556 2015-07-29

Publications (1)

Publication Number Publication Date
DE202016009128U1 true DE202016009128U1 (de) 2022-07-25

Family

ID=57883024

Family Applications (1)

Application Number Title Priority Date Filing Date
DE202016009128.0U Active DE202016009128U1 (de) 2015-07-29 2016-07-19 Laserglühen eines rotierenden Substrats

Country Status (8)

Country Link
US (1) US10256005B2 (https=)
EP (1) EP3329510B1 (https=)
JP (2) JP6985249B2 (https=)
KR (1) KR102531865B1 (https=)
CN (2) CN115527896B (https=)
DE (1) DE202016009128U1 (https=)
TW (2) TWI692012B (https=)
WO (1) WO2017019384A1 (https=)

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* Cited by examiner, † Cited by third party
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EP3329510B1 (en) * 2015-07-29 2022-04-13 Applied Materials, Inc. Rotating substrate laser anneal
US11171023B2 (en) * 2015-10-09 2021-11-09 Applied Materials, Inc. Diode laser for wafer heating for EPI processes
US10281335B2 (en) * 2017-05-26 2019-05-07 Applied Materials, Inc. Pulsed radiation sources for transmission pyrometry
JP7191504B2 (ja) * 2017-07-14 2022-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP2019021828A (ja) * 2017-07-20 2019-02-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN109935532B (zh) * 2017-12-15 2022-05-31 上海微电子装备（集团）股份有限公司 激光热处理装置和处理方法
CN112385028B (zh) * 2018-04-12 2024-06-25 玛特森技术公司 低热量预算退火
WO2019217180A1 (en) * 2018-05-08 2019-11-14 Lam Research Corporation Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner
JP7228990B2 (ja) * 2018-11-07 2023-02-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US11828656B2 (en) * 2020-11-20 2023-11-28 Applied Materials, Inc. Reflector plate for substrate processing
CN117242560A (zh) * 2021-04-29 2023-12-15 应用材料公司 用于快速热处理腔室的窗

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US4666678A (en) * 1957-06-27 1987-05-19 Lemelson Jerome H Radiation beam apparatus and method
JPH05255842A (ja) * 1992-03-11 1993-10-05 Matsushita Electric Ind Co Ltd レーザ・スパッタリング装置
US5424244A (en) 1992-03-26 1995-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for laser processing and apparatus for use in the same
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
DE10119047B4 (de) 2000-04-21 2010-12-09 Tokyo Electron Ltd. Thermische Bearbeitungsvorrichtung und thermisches Bearbeitungsverfahren
JP2003347228A (ja) * 2002-05-30 2003-12-05 Renesas Technology Corp 半導体装置の製造方法および熱処理装置
US7734439B2 (en) * 2002-06-24 2010-06-08 Mattson Technology, Inc. System and process for calibrating pyrometers in thermal processing chambers
JP2004193490A (ja) * 2002-12-13 2004-07-08 Seiko Epson Corp レーザー照射装置、レーザーの照射方法、及び半導体装置の製造方法
JP2004342785A (ja) * 2003-05-15 2004-12-02 Sony Corp 半導体製造方法および半導体製造装置
US20040253839A1 (en) * 2003-06-11 2004-12-16 Tokyo Electron Limited Semiconductor manufacturing apparatus and heat treatment method
KR20050028081A (ko) 2003-09-17 2005-03-22 주식회사 하이닉스반도체 멀티 편광 메뉴얼 블레이드
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JP2005259981A (ja) * 2004-03-11 2005-09-22 Advanced Lcd Technologies Development Center Co Ltd 結晶化方法及び結晶化装置
TW200741883A (en) * 2006-04-21 2007-11-01 Zeiss Carl Laser Optics Gmbh Apparatus for laser annealing of large substrates and method for laser annealing for large substrates
JP2010034491A (ja) * 2008-06-25 2010-02-12 Tokyo Electron Ltd アニール装置
US7915154B2 (en) * 2008-09-03 2011-03-29 Piwczyk Bernhard P Laser diffusion fabrication of solar cells
JP5611212B2 (ja) * 2008-09-17 2014-10-22 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板のアニールにおける熱量の管理
JP2010186815A (ja) * 2009-02-10 2010-08-26 Nec Corp 紫外線照射装置および紫外線照射方法
US20110185969A1 (en) 2009-08-21 2011-08-04 Varian Semiconductor Equipment Associates, Inc. Dual heating for precise wafer temperature control
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
JP5187771B2 (ja) * 2009-12-11 2013-04-24 株式会社日本製鋼所 半導体基板の製造方法およびレーザアニール装置
JP4865878B2 (ja) * 2010-03-25 2012-02-01 株式会社日本製鋼所 雰囲気安定化方法およびレーザ処理装置
TWI435391B (zh) * 2010-09-16 2014-04-21 大日本網屏製造股份有限公司 閃光熱處理裝置
JP2012169308A (ja) * 2011-02-09 2012-09-06 Toshiba Corp 熱処理装置および半導体装置の製造装置
JP5964626B2 (ja) 2012-03-22 2016-08-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN104428879B (zh) * 2012-05-30 2018-01-30 应用材料公司 用于快速热处理的设备及方法
CN103862169B (zh) * 2012-12-12 2016-08-10 中芯国际集成电路制造(上海)有限公司 激光退火设备和方法
CN105144355B (zh) * 2013-05-01 2018-02-06 应用材料公司 用于在晶片处理系统内进行低温测量的设备与方法
US9263265B2 (en) * 2013-08-30 2016-02-16 Applied Materials, Inc. Crystallization of amorphous films and grain growth using combination of laser and rapid thermal annealing
JP2015115401A (ja) * 2013-12-10 2015-06-22 三菱電機株式会社 レーザアニール方法およびレーザアニール装置
EP3329510B1 (en) * 2015-07-29 2022-04-13 Applied Materials, Inc. Rotating substrate laser anneal

Also Published As

Publication number Publication date
KR102531865B1 (ko) 2023-05-16
JP2022043054A (ja) 2022-03-15
EP3329510B1 (en) 2022-04-13
TWI722722B (zh) 2021-03-21
TW201721723A (zh) 2017-06-16
CN107851580B (zh) 2022-10-18
US10256005B2 (en) 2019-04-09
KR20180026789A (ko) 2018-03-13
JP6985249B2 (ja) 2021-12-22
WO2017019384A1 (en) 2017-02-02
JP7462604B2 (ja) 2024-04-05
EP3329510A1 (en) 2018-06-06
CN107851580A (zh) 2018-03-27
CN115527896A (zh) 2022-12-27
JP2018526819A (ja) 2018-09-13
CN115527896B (zh) 2026-04-21
TW202029299A (zh) 2020-08-01
US20170032865A1 (en) 2017-02-02
TWI692012B (zh) 2020-04-21
EP3329510A4 (en) 2019-05-01

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R151 Utility model maintained after payment of second maintenance fee after six years
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