CN115527896B - 旋转基板激光退火 - Google Patents

旋转基板激光退火

Info

Publication number
CN115527896B
CN115527896B CN202211184698.8A CN202211184698A CN115527896B CN 115527896 B CN115527896 B CN 115527896B CN 202211184698 A CN202211184698 A CN 202211184698A CN 115527896 B CN115527896 B CN 115527896B
Authority
CN
China
Prior art keywords
substrate
laser
laser source
radiation
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202211184698.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN115527896A (zh
Inventor
约瑟夫·M·拉内什
沙善·夏尔马
迪瓦卡尔·N·科德拉雅
阿伦·缪尔·亨特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN115527896A publication Critical patent/CN115527896A/zh
Application granted granted Critical
Publication of CN115527896B publication Critical patent/CN115527896B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Recrystallisation Techniques (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN202211184698.8A 2015-07-29 2016-07-19 旋转基板激光退火 Active CN115527896B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201562198556P 2015-07-29 2015-07-29
US62/198,556 2015-07-29
CN201680040639.XA CN107851580B (zh) 2015-07-29 2016-07-19 旋转基板激光退火
PCT/US2016/042954 WO2017019384A1 (en) 2015-07-29 2016-07-19 Rotating substrate laser anneal

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201680040639.XA Division CN107851580B (zh) 2015-07-29 2016-07-19 旋转基板激光退火

Publications (2)

Publication Number Publication Date
CN115527896A CN115527896A (zh) 2022-12-27
CN115527896B true CN115527896B (zh) 2026-04-21

Family

ID=57883024

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202211184698.8A Active CN115527896B (zh) 2015-07-29 2016-07-19 旋转基板激光退火
CN201680040639.XA Active CN107851580B (zh) 2015-07-29 2016-07-19 旋转基板激光退火

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201680040639.XA Active CN107851580B (zh) 2015-07-29 2016-07-19 旋转基板激光退火

Country Status (8)

Country Link
US (1) US10256005B2 (https=)
EP (1) EP3329510B1 (https=)
JP (2) JP6985249B2 (https=)
KR (1) KR102531865B1 (https=)
CN (2) CN115527896B (https=)
DE (1) DE202016009128U1 (https=)
TW (2) TWI692012B (https=)
WO (1) WO2017019384A1 (https=)

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EP3329510B1 (en) * 2015-07-29 2022-04-13 Applied Materials, Inc. Rotating substrate laser anneal
US11171023B2 (en) * 2015-10-09 2021-11-09 Applied Materials, Inc. Diode laser for wafer heating for EPI processes
US10281335B2 (en) * 2017-05-26 2019-05-07 Applied Materials, Inc. Pulsed radiation sources for transmission pyrometry
JP7191504B2 (ja) * 2017-07-14 2022-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP2019021828A (ja) * 2017-07-20 2019-02-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN109935532B (zh) * 2017-12-15 2022-05-31 上海微电子装备（集团）股份有限公司 激光热处理装置和处理方法
CN112385028B (zh) * 2018-04-12 2024-06-25 玛特森技术公司 低热量预算退火
WO2019217180A1 (en) * 2018-05-08 2019-11-14 Lam Research Corporation Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner
JP7228990B2 (ja) * 2018-11-07 2023-02-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US11828656B2 (en) * 2020-11-20 2023-11-28 Applied Materials, Inc. Reflector plate for substrate processing
CN117242560A (zh) * 2021-04-29 2023-12-15 应用材料公司 用于快速热处理腔室的窗

Citations (1)

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Publication number Priority date Publication date Assignee Title
JP2010034491A (ja) * 2008-06-25 2010-02-12 Tokyo Electron Ltd アニール装置

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Also Published As

Publication number Publication date
KR102531865B1 (ko) 2023-05-16
JP2022043054A (ja) 2022-03-15
EP3329510B1 (en) 2022-04-13
TWI722722B (zh) 2021-03-21
TW201721723A (zh) 2017-06-16
CN107851580B (zh) 2022-10-18
US10256005B2 (en) 2019-04-09
DE202016009128U1 (de) 2022-07-25
KR20180026789A (ko) 2018-03-13
JP6985249B2 (ja) 2021-12-22
WO2017019384A1 (en) 2017-02-02
JP7462604B2 (ja) 2024-04-05
EP3329510A1 (en) 2018-06-06
CN107851580A (zh) 2018-03-27
CN115527896A (zh) 2022-12-27
JP2018526819A (ja) 2018-09-13
TW202029299A (zh) 2020-08-01
US20170032865A1 (en) 2017-02-02
TWI692012B (zh) 2020-04-21
EP3329510A4 (en) 2019-05-01

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