TWI692012B - 旋轉基板雷射退火 - Google Patents

旋轉基板雷射退火 Download PDF

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Publication number
TWI692012B
TWI692012B TW105123162A TW105123162A TWI692012B TW I692012 B TWI692012 B TW I692012B TW 105123162 A TW105123162 A TW 105123162A TW 105123162 A TW105123162 A TW 105123162A TW I692012 B TWI692012 B TW I692012B
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TW
Taiwan
Prior art keywords
laser source
substrate
internal volume
source
radiation
Prior art date
Application number
TW105123162A
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English (en)
Chinese (zh)
Other versions
TW201721723A (zh
Inventor
喬瑟夫Ｍ 拉尼許
雪恩克 薛瑪
狄瓦卡N 凱德拉雅
亞倫穆爾 杭特
Original Assignee
美商應用材料股份有限公司
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Application filed by 美商應用材料股份有限公司 filed Critical 美商應用材料股份有限公司
Publication of TW201721723A publication Critical patent/TW201721723A/zh
Application granted granted Critical
Publication of TWI692012B publication Critical patent/TWI692012B/zh

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    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K5/00—Irradiation devices
    • G21K5/10—Irradiation devices with provision for relative movement of beam source and object to be irradiated
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Recrystallisation Techniques (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW105123162A 2015-07-29 2016-07-22 旋轉基板雷射退火 TWI692012B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562198556P 2015-07-29 2015-07-29
US62/198,556 2015-07-29

Publications (2)

Publication Number Publication Date
TW201721723A TW201721723A (zh) 2017-06-16
TWI692012B true TWI692012B (zh) 2020-04-21

Family

ID=57883024

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105123162A TWI692012B (zh) 2015-07-29 2016-07-22 旋轉基板雷射退火
TW108146334A TWI722722B (zh) 2015-07-29 2016-07-22 旋轉基板雷射退火

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW108146334A TWI722722B (zh) 2015-07-29 2016-07-22 旋轉基板雷射退火

Country Status (8)

Country Link
US (1) US10256005B2 (https=)
EP (1) EP3329510B1 (https=)
JP (2) JP6985249B2 (https=)
KR (1) KR102531865B1 (https=)
CN (2) CN115527896B (https=)
DE (1) DE202016009128U1 (https=)
TW (2) TWI692012B (https=)
WO (1) WO2017019384A1 (https=)

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US11171023B2 (en) * 2015-10-09 2021-11-09 Applied Materials, Inc. Diode laser for wafer heating for EPI processes
US10281335B2 (en) * 2017-05-26 2019-05-07 Applied Materials, Inc. Pulsed radiation sources for transmission pyrometry
JP7191504B2 (ja) * 2017-07-14 2022-12-19 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
JP2019021828A (ja) * 2017-07-20 2019-02-07 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
CN109935532B (zh) * 2017-12-15 2022-05-31 上海微电子装备（集团）股份有限公司 激光热处理装置和处理方法
CN112385028B (zh) * 2018-04-12 2024-06-25 玛特森技术公司 低热量预算退火
WO2019217180A1 (en) * 2018-05-08 2019-11-14 Lam Research Corporation Atomic layer etch and deposition processing systems including a lens circuit with a tele-centric lens, an optical beam folding assembly, or a polygon scanner
JP7228990B2 (ja) * 2018-11-07 2023-02-27 東京エレクトロン株式会社 基板処理装置及び基板処理方法
US11828656B2 (en) * 2020-11-20 2023-11-28 Applied Materials, Inc. Reflector plate for substrate processing
CN117242560A (zh) * 2021-04-29 2023-12-15 应用材料公司 用于快速热处理腔室的窗

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KR20050028081A (ko) * 2003-09-17 2005-03-22 주식회사 하이닉스반도체 멀티 편광 메뉴얼 블레이드
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
TW201214567A (en) * 2010-09-16 2012-04-01 Dainippon Screen Mfg Flash lamp annealer
TW201415558A (zh) * 2008-09-17 2014-04-16 應用材料股份有限公司 管理基材退火的熱預算

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CN104428879B (zh) * 2012-05-30 2018-01-30 应用材料公司 用于快速热处理的设备及方法
CN103862169B (zh) * 2012-12-12 2016-08-10 中芯国际集成电路制造(上海)有限公司 激光退火设备和方法
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KR20050028081A (ko) * 2003-09-17 2005-03-22 주식회사 하이닉스반도체 멀티 편광 메뉴얼 블레이드
TW201415558A (zh) * 2008-09-17 2014-04-16 應用材料股份有限公司 管理基材退火的熱預算
US20110065276A1 (en) * 2009-09-11 2011-03-17 Applied Materials, Inc. Apparatus and Methods for Cyclical Oxidation and Etching
TW201214567A (en) * 2010-09-16 2012-04-01 Dainippon Screen Mfg Flash lamp annealer

Also Published As

Publication number Publication date
KR102531865B1 (ko) 2023-05-16
JP2022043054A (ja) 2022-03-15
EP3329510B1 (en) 2022-04-13
TWI722722B (zh) 2021-03-21
TW201721723A (zh) 2017-06-16
CN107851580B (zh) 2022-10-18
US10256005B2 (en) 2019-04-09
DE202016009128U1 (de) 2022-07-25
KR20180026789A (ko) 2018-03-13
JP6985249B2 (ja) 2021-12-22
WO2017019384A1 (en) 2017-02-02
JP7462604B2 (ja) 2024-04-05
EP3329510A1 (en) 2018-06-06
CN107851580A (zh) 2018-03-27
CN115527896A (zh) 2022-12-27
JP2018526819A (ja) 2018-09-13
CN115527896B (zh) 2026-04-21
TW202029299A (zh) 2020-08-01
US20170032865A1 (en) 2017-02-02
EP3329510A4 (en) 2019-05-01

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