KR102523731B1 - 완전히 자기 정렬된 비아를 형성하기 위한 선택적 퇴적 방법 - Google Patents

완전히 자기 정렬된 비아를 형성하기 위한 선택적 퇴적 방법 Download PDF

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KR102523731B1
KR102523731B1 KR1020180143516A KR20180143516A KR102523731B1 KR 102523731 B1 KR102523731 B1 KR 102523731B1 KR 1020180143516 A KR1020180143516 A KR 1020180143516A KR 20180143516 A KR20180143516 A KR 20180143516A KR 102523731 B1 KR102523731 B1 KR 102523731B1
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substrate
gas
metal layer
silanol
exposing
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KR20190058342A (ko
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칸다바라 엔. 타필리
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도쿄엘렉트론가부시키가이샤
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    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
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KR102491746B1 (ko) 2023-01-25
US10586734B2 (en) 2020-03-10
TWI899549B (zh) 2025-10-01
US20190157149A1 (en) 2019-05-23
JP2019096877A (ja) 2019-06-20
TW202328473A (zh) 2023-07-16
KR20220132493A (ko) 2022-09-30
KR102549289B1 (ko) 2023-06-29
KR20190058342A (ko) 2019-05-29
JP7193990B2 (ja) 2022-12-21
KR20190058343A (ko) 2019-05-29
TWI788463B (zh) 2023-01-01
TW201930625A (zh) 2019-08-01
US20210074584A1 (en) 2021-03-11
TW201930626A (zh) 2019-08-01
JP7287770B2 (ja) 2023-06-06
US20190164749A1 (en) 2019-05-30

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