KR102516586B1 - 다이 본딩 장치 및 반도체 장치의 제조 방법 - Google Patents
다이 본딩 장치 및 반도체 장치의 제조 방법 Download PDFInfo
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- KR102516586B1 KR102516586B1 KR1020210030130A KR20210030130A KR102516586B1 KR 102516586 B1 KR102516586 B1 KR 102516586B1 KR 1020210030130 A KR1020210030130 A KR 1020210030130A KR 20210030130 A KR20210030130 A KR 20210030130A KR 102516586 B1 KR102516586 B1 KR 102516586B1
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- 239000004065 semiconductor Substances 0.000 title claims description 10
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- 230000002950 deficient Effects 0.000 description 5
- 210000000078 claw Anatomy 0.000 description 4
- 239000010410 layer Substances 0.000 description 3
- 229920001721 polyimide Polymers 0.000 description 3
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- 230000007547 defect Effects 0.000 description 2
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67121—Apparatus for making assemblies not otherwise provided for, e.g. package constructions
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Die Bonding (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Wire Bonding (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2020-051130 | 2020-03-23 | ||
JP2020051130A JP7437987B2 (ja) | 2020-03-23 | 2020-03-23 | ダイボンディング装置および半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20210118742A KR20210118742A (ko) | 2021-10-01 |
KR102516586B1 true KR102516586B1 (ko) | 2023-04-03 |
Family
ID=77752817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020210030130A KR102516586B1 (ko) | 2020-03-23 | 2021-03-08 | 다이 본딩 장치 및 반도체 장치의 제조 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7437987B2 (ja) |
KR (1) | KR102516586B1 (ja) |
CN (1) | CN113436986B (ja) |
TW (1) | TWI765517B (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114373686B (zh) * | 2022-03-21 | 2022-06-14 | 北京芯士联半导体科技有限公司 | 基板的接合方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001024008A (ja) | 1999-07-09 | 2001-01-26 | Fuji Photo Film Co Ltd | 発光部品のボンディング方法および装置 |
KR100920730B1 (ko) * | 2008-12-24 | 2009-10-07 | 주식회사 이큐스팜 | 이미징 장치용 조명장치 및 조명방법 |
JP2011257222A (ja) | 2010-06-08 | 2011-12-22 | Hitachi High-Technologies Corp | 欠陥検査方法および欠陥検査装置 |
JP2014211440A (ja) | 2014-06-02 | 2014-11-13 | 株式会社日立製作所 | 表面検査装置およびその方法 |
JP2018011048A (ja) * | 2016-07-05 | 2018-01-18 | キヤノンマシナリー株式会社 | 欠陥検出装置、欠陥検出方法、ウェハ、半導体チップ、半導体装置、ダイボンダ、ボンディング方法、半導体製造方法、および半導体装置製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03192800A (ja) * | 1989-12-21 | 1991-08-22 | Sharp Corp | プリント基板の部品実装認識方法 |
JPH10209227A (ja) * | 1997-01-20 | 1998-08-07 | Sony Corp | 半導体集積回路の検査システム、半導体集積回路の検査装置、および半導体集積回路の検査方法 |
JP6120094B2 (ja) * | 2013-07-05 | 2017-04-26 | ソニー株式会社 | 固体撮像装置およびその製造方法、並びに電子機器 |
KR101501129B1 (ko) | 2013-08-23 | 2015-03-12 | 주식회사 고영테크놀러지 | 기판 검사 장치 |
US20170234837A1 (en) * | 2014-10-24 | 2017-08-17 | Renishaw Plc | Acoustic apparatus and method |
CN107003254A (zh) * | 2014-12-05 | 2017-08-01 | 科磊股份有限公司 | 用于工件中的缺陷检测的设备、方法及计算机程序产品 |
JP6685126B2 (ja) * | 2015-12-24 | 2020-04-22 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
JP6658051B2 (ja) * | 2016-02-16 | 2020-03-04 | 三菱電機株式会社 | ウエハの検査装置、ウエハの検査方法および半導体装置の製造方法 |
CN109564172B (zh) * | 2016-07-05 | 2021-08-31 | 佳能机械株式会社 | 缺陷检测装置、缺陷检测方法、裸片接合机、半导体制造方法、以及半导体装置制造方法 |
JP6846958B2 (ja) * | 2017-03-09 | 2021-03-24 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
JP6975551B2 (ja) * | 2017-05-18 | 2021-12-01 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
JP7082862B2 (ja) * | 2017-07-27 | 2022-06-09 | ファスフォードテクノロジ株式会社 | ダイボンディング装置、半導体装置の製造方法および半導体製造システム |
JP7010633B2 (ja) | 2017-09-19 | 2022-01-26 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
JP7018341B2 (ja) * | 2018-03-26 | 2022-02-10 | ファスフォードテクノロジ株式会社 | ダイボンディング装置および半導体装置の製造方法 |
JP7102271B2 (ja) | 2018-07-17 | 2022-07-19 | ファスフォードテクノロジ株式会社 | 半導体製造装置および半導体装置の製造方法 |
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2020
- 2020-03-23 JP JP2020051130A patent/JP7437987B2/ja active Active
-
2021
- 2021-01-06 TW TW110100364A patent/TWI765517B/zh active
- 2021-02-22 CN CN202110197928.3A patent/CN113436986B/zh active Active
- 2021-03-08 KR KR1020210030130A patent/KR102516586B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001024008A (ja) | 1999-07-09 | 2001-01-26 | Fuji Photo Film Co Ltd | 発光部品のボンディング方法および装置 |
KR100920730B1 (ko) * | 2008-12-24 | 2009-10-07 | 주식회사 이큐스팜 | 이미징 장치용 조명장치 및 조명방법 |
JP2011257222A (ja) | 2010-06-08 | 2011-12-22 | Hitachi High-Technologies Corp | 欠陥検査方法および欠陥検査装置 |
JP2014211440A (ja) | 2014-06-02 | 2014-11-13 | 株式会社日立製作所 | 表面検査装置およびその方法 |
JP2018011048A (ja) * | 2016-07-05 | 2018-01-18 | キヤノンマシナリー株式会社 | 欠陥検出装置、欠陥検出方法、ウェハ、半導体チップ、半導体装置、ダイボンダ、ボンディング方法、半導体製造方法、および半導体装置製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN113436986B (zh) | 2024-02-20 |
CN113436986A (zh) | 2021-09-24 |
JP2021150586A (ja) | 2021-09-27 |
JP7437987B2 (ja) | 2024-02-26 |
TW202138790A (zh) | 2021-10-16 |
KR20210118742A (ko) | 2021-10-01 |
TWI765517B (zh) | 2022-05-21 |
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