KR102478797B1 - 절삭 장치 - Google Patents

절삭 장치 Download PDF

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Publication number
KR102478797B1
KR102478797B1 KR1020170015980A KR20170015980A KR102478797B1 KR 102478797 B1 KR102478797 B1 KR 102478797B1 KR 1020170015980 A KR1020170015980 A KR 1020170015980A KR 20170015980 A KR20170015980 A KR 20170015980A KR 102478797 B1 KR102478797 B1 KR 102478797B1
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KR
South Korea
Prior art keywords
cutting
holding
workpiece
clearance groove
jig
Prior art date
Application number
KR1020170015980A
Other languages
English (en)
Korean (ko)
Other versions
KR20170094495A (ko
Inventor
사토시 사와키
히데유키 산도
Original Assignee
가부시기가이샤 디스코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시기가이샤 디스코 filed Critical 가부시기가이샤 디스코
Publication of KR20170094495A publication Critical patent/KR20170094495A/ko
Application granted granted Critical
Publication of KR102478797B1 publication Critical patent/KR102478797B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/01—Means for holding or positioning work
    • B26D7/018—Holding the work by suction
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B26—HAND CUTTING TOOLS; CUTTING; SEVERING
    • B26D—CUTTING; DETAILS COMMON TO MACHINES FOR PERFORATING, PUNCHING, CUTTING-OUT, STAMPING-OUT OR SEVERING
    • B26D7/00—Details of apparatus for cutting, cutting-out, stamping-out, punching, perforating, or severing by means other than cutting
    • B26D7/08—Means for treating work or cutting member to facilitate cutting
    • B26D7/088—Means for treating work or cutting member to facilitate cutting by cleaning or lubricating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
KR1020170015980A 2016-02-09 2017-02-06 절삭 장치 KR102478797B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016022950A JP6556066B2 (ja) 2016-02-09 2016-02-09 切削装置
JPJP-P-2016-022950 2016-02-09

Publications (2)

Publication Number Publication Date
KR20170094495A KR20170094495A (ko) 2017-08-18
KR102478797B1 true KR102478797B1 (ko) 2022-12-16

Family

ID=59543618

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020170015980A KR102478797B1 (ko) 2016-02-09 2017-02-06 절삭 장치

Country Status (4)

Country Link
JP (1) JP6556066B2 (zh)
KR (1) KR102478797B1 (zh)
CN (1) CN107045976B (zh)
TW (1) TWI708284B (zh)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6970554B2 (ja) * 2017-08-21 2021-11-24 株式会社ディスコ 加工方法
CN108000610A (zh) * 2017-12-28 2018-05-08 东莞市亿协自动化设备有限公司 电子线路板分板机
JP7075652B2 (ja) * 2017-12-28 2022-05-26 三星ダイヤモンド工業株式会社 スクライブ装置およびスクライブ方法
JP7203712B2 (ja) * 2019-11-18 2023-01-13 Ｔｏｗａ株式会社 切断装置、及び、切断品の製造方法
KR20210061273A (ko) * 2019-11-19 2021-05-27 가부시키가이샤 에바라 세이사꾸쇼 기판을 보유 지지하기 위한 톱링 및 기판 처리 장치
CN113927651A (zh) * 2020-07-13 2022-01-14 广东博智林机器人有限公司 吸附结构及具有其的切割机

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011018792A (ja) 2009-07-09 2011-01-27 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2011114145A (ja) 2009-11-26 2011-06-09 Disco Abrasive Syst Ltd 切削装置及び切削方法
JP4903445B2 (ja) 2006-01-26 2012-03-28 株式会社ディスコ 切削ブレードの切り込み確認方法
JP2015093335A (ja) 2013-11-11 2015-05-18 株式会社ディスコ 切削装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54149575A (en) * 1978-05-17 1979-11-22 Hitachi Ltd Method and device for wafer division
JPS6333907U (zh) * 1986-08-20 1988-03-04
JP2003309087A (ja) * 2002-04-18 2003-10-31 Towa Corp 基板の切断方法及び装置
JP5286303B2 (ja) * 2010-02-16 2013-09-11 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP5904721B2 (ja) 2011-06-10 2016-04-20 株式会社ディスコ 分割予定ライン検出方法
JP5881080B2 (ja) * 2012-02-29 2016-03-09 株式会社小松製作所 ワイヤソーおよびワイヤソー用ダクト装置
JP6096047B2 (ja) * 2013-05-15 2017-03-15 株式会社ディスコ 切削装置およびパッケージ基板の加工方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4903445B2 (ja) 2006-01-26 2012-03-28 株式会社ディスコ 切削ブレードの切り込み確認方法
JP2011018792A (ja) 2009-07-09 2011-01-27 Disco Abrasive Syst Ltd ウエーハの加工方法
JP2011114145A (ja) 2009-11-26 2011-06-09 Disco Abrasive Syst Ltd 切削装置及び切削方法
JP2015093335A (ja) 2013-11-11 2015-05-18 株式会社ディスコ 切削装置

Also Published As

Publication number Publication date
TW201729271A (zh) 2017-08-16
CN107045976B (zh) 2023-05-30
TWI708284B (zh) 2020-10-21
JP2017143146A (ja) 2017-08-17
KR20170094495A (ko) 2017-08-18
JP6556066B2 (ja) 2019-08-07
CN107045976A (zh) 2017-08-15

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