KR102474454B1 - 증착 마스크의 제조 방법 및 증착 마스크 - Google Patents
증착 마스크의 제조 방법 및 증착 마스크 Download PDFInfo
- Publication number
- KR102474454B1 KR102474454B1 KR1020177021747A KR20177021747A KR102474454B1 KR 102474454 B1 KR102474454 B1 KR 102474454B1 KR 1020177021747 A KR1020177021747 A KR 1020177021747A KR 20177021747 A KR20177021747 A KR 20177021747A KR 102474454 B1 KR102474454 B1 KR 102474454B1
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- metal layer
- deposition mask
- substrate
- pattern
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000008021 deposition Effects 0.000 title claims abstract description 265
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 229910052751 metal Inorganic materials 0.000 claims abstract description 334
- 239000002184 metal Substances 0.000 claims abstract description 334
- 238000000151 deposition Methods 0.000 claims abstract description 282
- 239000000758 substrate Substances 0.000 claims abstract description 173
- 238000000034 method Methods 0.000 claims abstract description 83
- 238000007747 plating Methods 0.000 claims abstract description 75
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 16
- 238000000926 separation method Methods 0.000 claims description 16
- 238000009713 electroplating Methods 0.000 claims description 11
- 230000008569 process Effects 0.000 abstract description 49
- 239000000463 material Substances 0.000 description 45
- 239000000243 solution Substances 0.000 description 25
- 238000001704 evaporation Methods 0.000 description 18
- 230000008020 evaporation Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 14
- 238000005530 etching Methods 0.000 description 11
- 229910000640 Fe alloy Inorganic materials 0.000 description 8
- 238000001039 wet etching Methods 0.000 description 8
- 238000005137 deposition process Methods 0.000 description 7
- 229910052759 nickel Inorganic materials 0.000 description 7
- 239000003054 catalyst Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 239000011368 organic material Substances 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 230000003628 erosive effect Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229910001374 Invar Inorganic materials 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- 239000003929 acidic solution Substances 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- KERTUBUCQCSNJU-UHFFFAOYSA-L nickel(2+);disulfamate Chemical compound [Ni+2].NS([O-])(=O)=O.NS([O-])(=O)=O KERTUBUCQCSNJU-UHFFFAOYSA-L 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 150000002506 iron compounds Chemical class 0.000 description 1
- SQZYOZWYVFYNFV-UHFFFAOYSA-L iron(2+);disulfamate Chemical compound [Fe+2].NS([O-])(=O)=O.NS([O-])(=O)=O SQZYOZWYVFYNFV-UHFFFAOYSA-L 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 1
- 150000002816 nickel compounds Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- CVHZOJJKTDOEJC-UHFFFAOYSA-N saccharin Chemical compound C1=CC=C2C(=O)NS(=O)(=O)C2=C1 CVHZOJJKTDOEJC-UHFFFAOYSA-N 0.000 description 1
- 229940081974 saccharin Drugs 0.000 description 1
- 235000019204 saccharin Nutrition 0.000 description 1
- 239000000901 saccharin and its Na,K and Ca salt Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/08—Perforated or foraminous objects, e.g. sieves
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/10—Moulds; Masks; Masterforms
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- H01L51/0011—
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrochemistry (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015024626 | 2015-02-10 | ||
JPJP-P-2015-024626 | 2015-02-10 | ||
PCT/JP2016/053581 WO2016129534A1 (ja) | 2015-02-10 | 2016-02-05 | 蒸着マスクの製造方法および蒸着マスク |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20170110623A KR20170110623A (ko) | 2017-10-11 |
KR102474454B1 true KR102474454B1 (ko) | 2022-12-06 |
Family
ID=56615612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020177021747A Active KR102474454B1 (ko) | 2015-02-10 | 2016-02-05 | 증착 마스크의 제조 방법 및 증착 마스크 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6688478B2 (enrdf_load_stackoverflow) |
KR (1) | KR102474454B1 (enrdf_load_stackoverflow) |
CN (2) | CN107208251B (enrdf_load_stackoverflow) |
TW (2) | TWI682237B (enrdf_load_stackoverflow) |
WO (1) | WO2016129534A1 (enrdf_load_stackoverflow) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6425135B2 (ja) * | 2015-04-07 | 2018-11-21 | 大日本印刷株式会社 | 蒸着マスクの製造方法 |
KR102477941B1 (ko) | 2015-09-30 | 2022-12-16 | 다이니폰 인사츠 가부시키가이샤 | 증착 마스크, 증착 마스크의 제조 방법 및 금속판 |
US10541387B2 (en) | 2015-09-30 | 2020-01-21 | Dai Nippon Printing Co., Ltd. | Deposition mask, method of manufacturing deposition mask and metal plate |
WO2018092531A1 (ja) | 2016-11-18 | 2018-05-24 | 大日本印刷株式会社 | 蒸着マスク |
EP4148161B1 (en) | 2016-12-14 | 2025-05-14 | Dai Nippon Printing Co., Ltd. | Method of manufacturing vapor deposition mask device |
JP7121918B2 (ja) * | 2016-12-14 | 2022-08-19 | 大日本印刷株式会社 | 蒸着マスク装置及び蒸着マスク装置の製造方法 |
US20180183014A1 (en) * | 2016-12-27 | 2018-06-28 | Int Tech Co., Ltd. | Light emitting device |
WO2018135255A1 (ja) * | 2017-01-17 | 2018-07-26 | 大日本印刷株式会社 | 蒸着マスク及び蒸着マスクの製造方法 |
KR102330373B1 (ko) | 2017-03-14 | 2021-11-23 | 엘지이노텍 주식회사 | 금속판, 증착용 마스크 및 이의 제조방법 |
KR102418174B1 (ko) | 2017-07-05 | 2022-07-08 | 다이니폰 인사츠 가부시키가이샤 | 증착 마스크, 증착 마스크 장치, 증착 마스크의 제조 방법 및 증착 마스크 장치의 제조 방법 |
JP6652227B2 (ja) * | 2017-10-27 | 2020-02-19 | 大日本印刷株式会社 | 蒸着マスク及び蒸着マスクの製造方法 |
TWI765121B (zh) | 2017-11-14 | 2022-05-21 | 日商大日本印刷股份有限公司 | 用以製造蒸鍍罩之金屬板、金屬板之檢查方法、金屬板之製造方法、蒸鍍罩、蒸鍍罩裝置及蒸鍍罩之製造方法 |
JP6364599B1 (ja) * | 2017-11-20 | 2018-08-01 | 株式会社プロセス・ラボ・ミクロン | 微細パターンニッケル薄膜とその製造方法 |
JP7049593B2 (ja) * | 2017-11-30 | 2022-04-07 | 大日本印刷株式会社 | 蒸着マスク及び蒸着マスクの製造方法 |
WO2019180893A1 (ja) * | 2018-03-22 | 2019-09-26 | シャープ株式会社 | 蒸着マスク、及び蒸着装置 |
WO2020009088A1 (ja) * | 2018-07-03 | 2020-01-09 | 大日本印刷株式会社 | マスク及びその製造方法 |
KR102773284B1 (ko) * | 2018-07-09 | 2025-02-27 | 다이니폰 인사츠 가부시키가이샤 | 증착 마스크의 제조 방법 및 증착 마스크 장치의 제조 방법 |
DE202019006014U1 (de) | 2018-11-13 | 2024-01-25 | Dai Nippon Printing Co., Ltd. | Metallplatte zur Herstellung von Dampfphasenabscheidungsmasken |
CN211814624U (zh) * | 2018-12-25 | 2020-10-30 | 大日本印刷株式会社 | 蒸镀掩模 |
JP6838693B2 (ja) * | 2019-01-31 | 2021-03-03 | 大日本印刷株式会社 | 蒸着マスク群、電子デバイスの製造方法及び電子デバイス |
CN109913804B (zh) * | 2019-03-27 | 2021-01-26 | 京东方科技集团股份有限公司 | 掩膜版及其制造方法 |
CN114574908B (zh) * | 2019-05-13 | 2022-11-25 | 创造未来有限公司 | 精细金属掩模制造方法 |
JP2022067159A (ja) * | 2020-10-20 | 2022-05-06 | 株式会社ジャパンディスプレイ | 蒸着マスクユニットとその製造方法 |
CN115627443A (zh) * | 2020-11-18 | 2023-01-20 | 匠博先进材料科技(广州)有限公司 | 蒸镀掩模、组件、装置、显示装置及其制造方法和装置 |
KR20220091647A (ko) * | 2020-12-23 | 2022-07-01 | 삼성디스플레이 주식회사 | 마스크 어셈블리의 제작 방법 |
TWI828015B (zh) * | 2021-12-01 | 2024-01-01 | 達運精密工業股份有限公司 | 精密金屬遮罩的製造方法 |
JP2023106977A (ja) * | 2022-01-21 | 2023-08-02 | 株式会社ジャパンディスプレイ | 蒸着マスクおよびその製造方法 |
KR102696337B1 (ko) * | 2022-08-09 | 2024-08-20 | 대진대학교 산학협력단 | 고정밀 미세 메탈 마스크 제조방법 |
CN115948710B (zh) * | 2022-10-20 | 2024-10-18 | 京东方科技集团股份有限公司 | 一种蒸镀掩膜版及其制作方法、蒸镀设备 |
CN115896693A (zh) * | 2022-12-23 | 2023-04-04 | 京东方科技集团股份有限公司 | 掩膜板、显示背板、显示装置以及掩膜板的制备方法 |
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