KR102469539B1 - 비휘발성 메모리 장치, 비휘발성 메모리 장치의 동작 방법 및 저장 장치 - Google Patents

비휘발성 메모리 장치, 비휘발성 메모리 장치의 동작 방법 및 저장 장치 Download PDF

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KR102469539B1
KR102469539B1 KR1020170177848A KR20170177848A KR102469539B1 KR 102469539 B1 KR102469539 B1 KR 102469539B1 KR 1020170177848 A KR1020170177848 A KR 1020170177848A KR 20170177848 A KR20170177848 A KR 20170177848A KR 102469539 B1 KR102469539 B1 KR 102469539B1
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block
sub
bad
memory
erase
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KR20190076228A (ko
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김승범
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삼성전자주식회사
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Priority to KR1020170177848A priority Critical patent/KR102469539B1/ko
Priority to US16/111,813 priority patent/US10712954B2/en
Priority to DE102018125128.9A priority patent/DE102018125128B4/de
Priority to CN201811248198.XA priority patent/CN109961819B/zh
Priority to JP2018226638A priority patent/JP7232628B2/ja
Publication of KR20190076228A publication Critical patent/KR20190076228A/ko
Priority to US16/892,512 priority patent/US11334250B2/en
Priority to US17/033,077 priority patent/US11294580B2/en
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    • H—ELECTRICITY
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    • H—ELECTRICITY
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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Quality & Reliability (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
KR1020170177848A 2017-12-22 2017-12-22 비휘발성 메모리 장치, 비휘발성 메모리 장치의 동작 방법 및 저장 장치 Active KR102469539B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1020170177848A KR102469539B1 (ko) 2017-12-22 2017-12-22 비휘발성 메모리 장치, 비휘발성 메모리 장치의 동작 방법 및 저장 장치
US16/111,813 US10712954B2 (en) 2017-12-22 2018-08-24 Nonvolatile memory device, method of operating nonvolatile memory device and storage device including the same
DE102018125128.9A DE102018125128B4 (de) 2017-12-22 2018-10-11 Nichtflüchtige Speichervorrichtung, Verfahren zum Betreiben einer nichtflüchtigen Speichervorrichtung und Speichervorrichtung mit derselben
CN201811248198.XA CN109961819B (zh) 2017-12-22 2018-10-25 非易失性存储器装置及其操作方法以及包括其的存储装置
JP2018226638A JP7232628B2 (ja) 2017-12-22 2018-12-03 不揮発性メモリ装置、不揮発性メモリ装置の動作方法、及び貯蔵装置
US16/892,512 US11334250B2 (en) 2017-12-22 2020-06-04 Nonvolatile memory device, method of operating nonvolatile memory device and storage device including the same
US17/033,077 US11294580B2 (en) 2017-12-22 2020-09-25 Nonvolatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020170177848A KR102469539B1 (ko) 2017-12-22 2017-12-22 비휘발성 메모리 장치, 비휘발성 메모리 장치의 동작 방법 및 저장 장치

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KR20190076228A KR20190076228A (ko) 2019-07-02
KR102469539B1 true KR102469539B1 (ko) 2022-11-22

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US (2) US10712954B2 (enExample)
JP (1) JP7232628B2 (enExample)
KR (1) KR102469539B1 (enExample)
CN (1) CN109961819B (enExample)
DE (1) DE102018125128B4 (enExample)

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Publication number Priority date Publication date Assignee Title
KR102460526B1 (ko) * 2018-01-04 2022-11-01 삼성전자주식회사 불휘발성 메모리 장치를 포함하는 스토리지 장치, 불휘발성 메모리 장치, 그리고 스토리지 장치의 동작 방법
KR102596407B1 (ko) * 2018-03-13 2023-11-01 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
KR102840971B1 (ko) * 2019-05-17 2025-07-31 에스케이하이닉스 주식회사 메모리 시스템, 컨트롤러 및 컨트롤러의 동작 방법
KR102743810B1 (ko) 2019-06-10 2024-12-18 에스케이하이닉스 주식회사 반도체 장치 및 반도체 장치의 동작 방법
KR102716680B1 (ko) * 2019-09-20 2024-10-14 삼성전자주식회사 비휘발성 메모리 장치의 구동 방법 및 이를 수행하는 비휘발성 메모리 장치
KR102709627B1 (ko) * 2019-10-11 2024-09-26 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 제조 방법
US11487454B2 (en) * 2019-12-05 2022-11-01 Sandisk Technologies Llc Systems and methods for defining memory sub-blocks
KR102874903B1 (ko) * 2020-02-07 2025-10-23 에스케이하이닉스 주식회사 복수의 메모리 칩들을 갖는 반도체 메모리 장치
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