KR102436241B1 - 기판 처리 방법 및 열처리 장치 - Google Patents

기판 처리 방법 및 열처리 장치 Download PDF

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KR102436241B1
KR102436241B1 KR1020170164141A KR20170164141A KR102436241B1 KR 102436241 B1 KR102436241 B1 KR 102436241B1 KR 1020170164141 A KR1020170164141 A KR 1020170164141A KR 20170164141 A KR20170164141 A KR 20170164141A KR 102436241 B1 KR102436241 B1 KR 102436241B1
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processing chamber
heat treatment
unit
exhaust
metal
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KR20180065914A (ko
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요헤이 사노
신이치로 카와카미
마사시 에노모토
타카히로 시오자와
게이스케 요시다
토모야 오니츠카
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67772—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving removal of lid, door, cover

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020170164141A 2016-12-08 2017-12-01 기판 처리 방법 및 열처리 장치 Active KR102436241B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020220103350A KR102640367B1 (ko) 2016-12-08 2022-08-18 기판 처리 방법 및 열처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016238138A JP6781031B2 (ja) 2016-12-08 2016-12-08 基板処理方法及び熱処理装置
JPJP-P-2016-238138 2016-12-08

Related Child Applications (1)

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KR1020220103350A Division KR102640367B1 (ko) 2016-12-08 2022-08-18 기판 처리 방법 및 열처리 장치

Publications (2)

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KR20180065914A KR20180065914A (ko) 2018-06-18
KR102436241B1 true KR102436241B1 (ko) 2022-08-25

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KR1020170164141A Active KR102436241B1 (ko) 2016-12-08 2017-12-01 기판 처리 방법 및 열처리 장치
KR1020220103350A Active KR102640367B1 (ko) 2016-12-08 2022-08-18 기판 처리 방법 및 열처리 장치
KR1020240004993A Active KR102753390B1 (ko) 2016-12-08 2024-01-11 열처리 방법 및 열처리 장치
KR1020240202558A Pending KR20250006804A (ko) 2016-12-08 2024-12-31 기판 처리 방법 및 기판 처리 시스템

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KR1020220103350A Active KR102640367B1 (ko) 2016-12-08 2022-08-18 기판 처리 방법 및 열처리 장치
KR1020240004993A Active KR102753390B1 (ko) 2016-12-08 2024-01-11 열처리 방법 및 열처리 장치
KR1020240202558A Pending KR20250006804A (ko) 2016-12-08 2024-12-31 기판 처리 방법 및 기판 처리 시스템

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US (1) US10656526B2 (OSRAM)
JP (1) JP6781031B2 (OSRAM)
KR (4) KR102436241B1 (OSRAM)
CN (2) CN108183068B (OSRAM)
TW (2) TWI746716B (OSRAM)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170048787A (ko) * 2015-10-27 2017-05-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates
US10274847B2 (en) 2017-09-19 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Humidity control in EUV lithography
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
US11594424B2 (en) 2018-08-30 2023-02-28 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP7129309B2 (ja) * 2018-10-16 2022-09-01 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
CN113039486B (zh) 2018-11-14 2024-11-12 朗姆研究公司 可用于下一代光刻法中的硬掩模制作方法
KR102731166B1 (ko) 2018-12-20 2024-11-18 램 리써치 코포레이션 레지스트들의 건식 현상 (dry development)
KR102666133B1 (ko) * 2019-01-14 2024-05-17 삼성전자주식회사 초임계 건조 장치 및 그를 이용한 기판 건조방법
WO2020149903A1 (en) 2019-01-18 2020-07-23 Applied Materials, Inc. A film structure for electric field guided photoresist patterning process
JP7162541B2 (ja) * 2019-01-22 2022-10-28 東京エレクトロン株式会社 基板処理装置、及び基板処理方法、及び記憶媒体
JP7208813B2 (ja) * 2019-02-08 2023-01-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7242354B2 (ja) * 2019-03-13 2023-03-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
TWI883015B (zh) * 2019-06-28 2025-05-11 美商蘭姆研究公司 烘烤基板上之光阻層的方法及設備
JP7308671B2 (ja) * 2019-07-03 2023-07-14 東京エレクトロン株式会社 基板熱処理装置、基板熱処理方法及び記憶媒体
JP7359680B2 (ja) * 2019-07-22 2023-10-11 東京エレクトロン株式会社 熱処理装置及び処理方法
CN112289701B (zh) * 2019-07-22 2025-12-19 东京毅力科创株式会社 热处理装置和热处理方法
US11626285B2 (en) * 2019-09-10 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device
JP7499106B2 (ja) * 2019-10-17 2024-06-13 東京エレクトロン株式会社 基板処理装置、基板処理方法、及びプログラム
KR102357066B1 (ko) * 2019-10-31 2022-02-03 세메스 주식회사 기판 처리 장치
JP7189375B2 (ja) 2020-01-15 2022-12-13 ラム リサーチ コーポレーション フォトレジスト接着および線量低減のための下層
US20230031955A1 (en) * 2020-02-04 2023-02-02 Lam Research Corporation Post application/exposure treatments to improve dry development performance of metal-containing euv resist
US11429026B2 (en) 2020-03-20 2022-08-30 Applied Materials, Inc. Lithography process window enhancement for photoresist patterning
US12085858B2 (en) 2020-03-20 2024-09-10 Applied Materials, Inc. Photoresist patterning process
TWI885087B (zh) * 2020-03-24 2025-06-01 日商東京威力科創股份有限公司 熱處理裝置及熱處理方法
WO2021202681A1 (en) 2020-04-03 2021-10-07 Lam Research Corporation Pre-exposure photoresist curing to enhance euv lithographic performance
JP7413164B2 (ja) * 2020-06-26 2024-01-15 東京エレクトロン株式会社 熱処理ユニット、基板処理装置、熱処理方法、及び記憶媒体
KR102781895B1 (ko) 2020-07-07 2025-03-18 램 리써치 코포레이션 방사선 포토레지스트 패터닝을 패터닝하기 위한 통합된 건식 프로세스
KR102797476B1 (ko) 2020-11-13 2025-04-21 램 리써치 코포레이션 포토레지스트의 건식 제거를 위한 프로세스 툴
KR102622987B1 (ko) * 2020-12-10 2024-01-11 세메스 주식회사 기판 처리 장치 및 이에 제공되는 필러 부재
US11815816B2 (en) 2021-02-15 2023-11-14 Applied Materials, Inc. Apparatus for post exposure bake of photoresist
JP2024509727A (ja) 2021-02-15 2024-03-05 アプライド マテリアルズ インコーポレイテッド フォトレジストの露光後ベークのための装置
WO2023276723A1 (ja) * 2021-06-30 2023-01-05 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7432770B2 (ja) * 2021-09-06 2024-02-16 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
JP2023177658A (ja) 2022-06-02 2023-12-14 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
KR20240049978A (ko) * 2022-10-11 2024-04-18 삼성전자주식회사 기판 처리 장치
KR20240065990A (ko) * 2022-11-07 2024-05-14 삼성전자주식회사 기판 처리 장치 및 기판 처리 방법
JP7565390B2 (ja) * 2023-01-17 2024-10-10 株式会社Ｓｃｒｅｅｎホールディングス 加熱装置および加熱方法
WO2024196643A1 (en) 2023-03-17 2024-09-26 Lam Research Corporation Integration of dry development and etch processes for euv patterning in a single process chamber
JP2024152282A (ja) 2023-04-14 2024-10-25 東京エレクトロン株式会社 熱処理方法、熱処理装置及びコンピュータ記憶媒体

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006066749A (ja) 2004-08-30 2006-03-09 Renesas Technology Corp 半導体集積回路装置の製造方法
KR100590355B1 (ko) 1997-01-16 2006-09-06 동경 엘렉트론 주식회사 베이킹장치및베이킹방법
JP2016530565A (ja) * 2013-08-22 2016-09-29 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機金属溶液に基づいた高解像度パターニング組成物

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11274059A (ja) * 1998-03-18 1999-10-08 Tokyo Electron Ltd 露光処理後の加熱方法及び加熱装置
US6368776B1 (en) * 1998-03-18 2002-04-09 Tokyo Electron Limited Treatment apparatus and treatment method
US20020011216A1 (en) * 1999-06-04 2002-01-31 Tue Nguyen Integral susceptor-wall reactor system and method
JP3989221B2 (ja) * 2001-10-25 2007-10-10 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP4293333B2 (ja) * 2002-07-18 2009-07-08 東京エレクトロン株式会社 基板処理の不具合検出方法及び処理装置
JP2007059633A (ja) * 2005-08-24 2007-03-08 Tokyo Electron Ltd 基板加熱装置及び基板加熱方法
JP2008198739A (ja) * 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
JP2008218866A (ja) * 2007-03-07 2008-09-18 Elpida Memory Inc パターン形成方法およびパターン形成装置
JP5410174B2 (ja) * 2009-07-01 2014-02-05 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理システム
JP2011066119A (ja) * 2009-09-16 2011-03-31 Toshiba Corp 半導体装置の製造装置および製造方法
JP5434800B2 (ja) * 2010-06-01 2014-03-05 東京エレクトロン株式会社 疎水化処理方法及び疎水化処理装置
JPWO2013065771A1 (ja) * 2011-11-01 2015-04-02 株式会社日立国際電気 半導体装置の製造方法、半導体装置の製造装置及び記録媒体
JP5673523B2 (ja) * 2011-12-28 2015-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
US8703386B2 (en) * 2012-02-27 2014-04-22 International Business Machines Corporation Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
JP6324800B2 (ja) * 2014-05-07 2018-05-16 東京エレクトロン株式会社 成膜方法および成膜装置
JP6631536B2 (ja) * 2014-12-02 2020-01-15 Jsr株式会社 フォトレジスト組成物及びその製造方法並びにレジストパターン形成方法
JP5963893B2 (ja) * 2015-01-09 2016-08-03 株式会社日立国際電気 基板処理装置、ガス分散ユニット、半導体装置の製造方法およびプログラム
JP5947435B1 (ja) * 2015-08-27 2016-07-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP6318139B2 (ja) * 2015-12-25 2018-04-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6240712B1 (ja) * 2016-05-31 2017-11-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100590355B1 (ko) 1997-01-16 2006-09-06 동경 엘렉트론 주식회사 베이킹장치및베이킹방법
JP2006066749A (ja) 2004-08-30 2006-03-09 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2016530565A (ja) * 2013-08-22 2016-09-29 インプリア・コーポレイションＩｎｐｒｉａ Ｃｏｒｐｏｒａｔｉｏｎ 有機金属溶液に基づいた高解像度パターニング組成物

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