JP6781031B2 - 基板処理方法及び熱処理装置 - Google Patents

基板処理方法及び熱処理装置 Download PDF

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Publication number
JP6781031B2
JP6781031B2 JP2016238138A JP2016238138A JP6781031B2 JP 6781031 B2 JP6781031 B2 JP 6781031B2 JP 2016238138 A JP2016238138 A JP 2016238138A JP 2016238138 A JP2016238138 A JP 2016238138A JP 6781031 B2 JP6781031 B2 JP 6781031B2
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processing chamber
heat treatment
water
outer peripheral
substrate
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English (en)
Japanese (ja)
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JP2018098229A (ja
JP2018098229A5 (OSRAM
Inventor
要平 佐野
要平 佐野
真一路 川上
真一路 川上
正志 榎本
正志 榎本
崇博 塩澤
崇博 塩澤
圭佑 吉田
圭佑 吉田
智也 鬼塚
智也 鬼塚
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2016238138A priority Critical patent/JP6781031B2/ja
Priority to US15/823,661 priority patent/US10656526B2/en
Priority to KR1020170164141A priority patent/KR102436241B1/ko
Priority to TW106142318A priority patent/TWI746716B/zh
Priority to TW110137697A priority patent/TWI789048B/zh
Priority to CN202310487865.4A priority patent/CN116469755A/zh
Priority to CN201711293037.8A priority patent/CN108183068B/zh
Publication of JP2018098229A publication Critical patent/JP2018098229A/ja
Publication of JP2018098229A5 publication Critical patent/JP2018098229A5/ja
Priority to JP2020173830A priority patent/JP6955073B2/ja
Publication of JP6781031B2 publication Critical patent/JP6781031B2/ja
Application granted granted Critical
Priority to KR1020220103350A priority patent/KR102640367B1/ko
Priority to KR1020240004993A priority patent/KR102753390B1/ko
Priority to KR1020240202558A priority patent/KR20250006804A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2016238138A 2016-12-08 2016-12-08 基板処理方法及び熱処理装置 Active JP6781031B2 (ja)

Priority Applications (11)

Application Number Priority Date Filing Date Title
JP2016238138A JP6781031B2 (ja) 2016-12-08 2016-12-08 基板処理方法及び熱処理装置
US15/823,661 US10656526B2 (en) 2016-12-08 2017-11-28 Substrate treatment method and thermal treatment apparatus
KR1020170164141A KR102436241B1 (ko) 2016-12-08 2017-12-01 기판 처리 방법 및 열처리 장치
TW106142318A TWI746716B (zh) 2016-12-08 2017-12-04 基板處理方法及熱處理裝置
TW110137697A TWI789048B (zh) 2016-12-08 2017-12-04 基板處理方法、基板處理系統及電腦可讀取記憶媒體
CN201711293037.8A CN108183068B (zh) 2016-12-08 2017-12-08 基片处理方法和热处理装置
CN202310487865.4A CN116469755A (zh) 2016-12-08 2017-12-08 基片处理方法和热处理装置
JP2020173830A JP6955073B2 (ja) 2016-12-08 2020-10-15 熱処理方法及び熱処理装置
KR1020220103350A KR102640367B1 (ko) 2016-12-08 2022-08-18 기판 처리 방법 및 열처리 장치
KR1020240004993A KR102753390B1 (ko) 2016-12-08 2024-01-11 열처리 방법 및 열처리 장치
KR1020240202558A KR20250006804A (ko) 2016-12-08 2024-12-31 기판 처리 방법 및 기판 처리 시스템

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016238138A JP6781031B2 (ja) 2016-12-08 2016-12-08 基板処理方法及び熱処理装置

Related Child Applications (1)

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JP2020173830A Division JP6955073B2 (ja) 2016-12-08 2020-10-15 熱処理方法及び熱処理装置

Publications (3)

Publication Number Publication Date
JP2018098229A JP2018098229A (ja) 2018-06-21
JP2018098229A5 JP2018098229A5 (OSRAM) 2019-11-14
JP6781031B2 true JP6781031B2 (ja) 2020-11-04

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US (1) US10656526B2 (OSRAM)
JP (1) JP6781031B2 (OSRAM)
KR (4) KR102436241B1 (OSRAM)
CN (2) CN116469755A (OSRAM)
TW (2) TWI789048B (OSRAM)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170048787A (ko) * 2015-10-27 2017-05-10 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
US10535538B2 (en) * 2017-01-26 2020-01-14 Gary Hillman System and method for heat treatment of substrates
US10274847B2 (en) 2017-09-19 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Humidity control in EUV lithography
JP7166089B2 (ja) * 2018-06-29 2022-11-07 東京エレクトロン株式会社 基板処理装置、基板処理システムおよび基板処理方法
US11594424B2 (en) 2018-08-30 2023-02-28 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
JP7129309B2 (ja) * 2018-10-16 2022-09-01 東京エレクトロン株式会社 基板処理装置、基板処理方法、及び記憶媒体
KR102678588B1 (ko) 2018-11-14 2024-06-27 램 리써치 코포레이션 차세대 리소그래피에서 유용한 하드 마스크들을 제조하기 위한 방법들
WO2020132281A1 (en) 2018-12-20 2020-06-25 Lam Research Corporation Dry development of resists
KR102666133B1 (ko) * 2019-01-14 2024-05-17 삼성전자주식회사 초임계 건조 장치 및 그를 이용한 기판 건조방법
KR20250117741A (ko) 2019-01-18 2025-08-05 어플라이드 머티어리얼스, 인코포레이티드 전기장 유도 포토레지스트 패터닝 프로세스를 위한 막 구조
JP7162541B2 (ja) * 2019-01-22 2022-10-28 東京エレクトロン株式会社 基板処理装置、及び基板処理方法、及び記憶媒体
JP7208813B2 (ja) * 2019-02-08 2023-01-19 東京エレクトロン株式会社 基板処理装置及び基板処理方法
JP7242354B2 (ja) * 2019-03-13 2023-03-20 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
TWI869221B (zh) 2019-06-26 2025-01-01 美商蘭姆研究公司 利用鹵化物化學品的光阻顯影
US20220308454A1 (en) * 2019-06-28 2022-09-29 Lam Research Corporation Bake strategies to enhance lithographic performance of metal-containing resist
JP7308671B2 (ja) * 2019-07-03 2023-07-14 東京エレクトロン株式会社 基板熱処理装置、基板熱処理方法及び記憶媒体
CN112289701B (zh) * 2019-07-22 2025-12-19 东京毅力科创株式会社 热处理装置和热处理方法
JP7359680B2 (ja) * 2019-07-22 2023-10-11 東京エレクトロン株式会社 熱処理装置及び処理方法
US11626285B2 (en) * 2019-09-10 2023-04-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device
JP7499106B2 (ja) * 2019-10-17 2024-06-13 東京エレクトロン株式会社 基板処理装置、基板処理方法、及びプログラム
KR102357066B1 (ko) * 2019-10-31 2022-02-03 세메스 주식회사 기판 처리 장치
US12506004B2 (en) * 2019-12-02 2025-12-23 Taiwan Semiconductor Manufacturing Company, Ltd. Method of manufacturing a semiconductor device and semiconductor device manufacturing tool
EP4651192A2 (en) 2020-01-15 2025-11-19 Lam Research Corporation Underlayer for photoresist adhesion and dose reduction
US20230031955A1 (en) * 2020-02-04 2023-02-02 Lam Research Corporation Post application/exposure treatments to improve dry development performance of metal-containing euv resist
US11429026B2 (en) 2020-03-20 2022-08-30 Applied Materials, Inc. Lithography process window enhancement for photoresist patterning
US12085858B2 (en) 2020-03-20 2024-09-10 Applied Materials, Inc. Photoresist patterning process
TW202534798A (zh) * 2020-03-24 2025-09-01 日商東京威力科創股份有限公司 熱處理裝置、熱處理方法及記憶媒體
CN115362414A (zh) 2020-04-03 2022-11-18 朗姆研究公司 用于增强euv光刻性能的暴露前光致抗蚀剂固化
JP7413164B2 (ja) * 2020-06-26 2024-01-15 東京エレクトロン株式会社 熱処理ユニット、基板処理装置、熱処理方法、及び記憶媒体
JP7382512B2 (ja) 2020-07-07 2023-11-16 ラム リサーチ コーポレーション 照射フォトレジストパターニングのための統合乾式プロセス
CN115598943A (zh) 2020-11-13 2023-01-13 朗姆研究公司（Us） 用于干法去除光致抗蚀剂的处理工具
KR102622987B1 (ko) 2020-12-10 2024-01-11 세메스 주식회사 기판 처리 장치 및 이에 제공되는 필러 부재
US11815816B2 (en) 2021-02-15 2023-11-14 Applied Materials, Inc. Apparatus for post exposure bake of photoresist
WO2022173655A1 (en) 2021-02-15 2022-08-18 Applied Materials, Inc. Apparatus for post exposure bake of photoresist
WO2023276723A1 (ja) * 2021-06-30 2023-01-05 東京エレクトロン株式会社 基板処理装置及び基板処理方法
CN116097399A (zh) * 2021-09-06 2023-05-09 东京毅力科创株式会社 热处理装置、热处理方法以及存储介质
JP2023177658A (ja) 2022-06-02 2023-12-14 東京エレクトロン株式会社 熱処理装置、熱処理方法及び記憶媒体
CN118159914A (zh) 2022-07-01 2024-06-07 朗姆研究公司 用于阻止蚀刻停止的金属氧化物基光致抗蚀剂的循环显影
KR20240049978A (ko) * 2022-10-11 2024-04-18 삼성전자주식회사 기판 처리 장치
KR20240065990A (ko) * 2022-11-07 2024-05-14 삼성전자주식회사 기판 처리 장치 및 기판 처리 방법
JP7565390B2 (ja) * 2023-01-17 2024-10-10 株式会社Ｓｃｒｅｅｎホールディングス 加熱装置および加熱方法
JP7769144B2 (ja) 2023-03-17 2025-11-12 ラム リサーチ コーポレーション Ｅｕｖパターニングのための乾式現像およびエッチングプロセスの単一プロセスチャンバへの統合
JP2024152282A (ja) 2023-04-14 2024-10-25 東京エレクトロン株式会社 熱処理方法、熱処理装置及びコンピュータ記憶媒体

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW464944B (en) * 1997-01-16 2001-11-21 Tokyo Electron Ltd Baking apparatus and baking method
US6368776B1 (en) * 1998-03-18 2002-04-09 Tokyo Electron Limited Treatment apparatus and treatment method
JPH11274059A (ja) * 1998-03-18 1999-10-08 Tokyo Electron Ltd 露光処理後の加熱方法及び加熱装置
US20020011216A1 (en) * 1999-06-04 2002-01-31 Tue Nguyen Integral susceptor-wall reactor system and method
JP3989221B2 (ja) * 2001-10-25 2007-10-10 東京エレクトロン株式会社 熱処理装置および熱処理方法
JP4293333B2 (ja) * 2002-07-18 2009-07-08 東京エレクトロン株式会社 基板処理の不具合検出方法及び処理装置
JP2006066749A (ja) * 2004-08-30 2006-03-09 Renesas Technology Corp 半導体集積回路装置の製造方法
JP2007059633A (ja) * 2005-08-24 2007-03-08 Tokyo Electron Ltd 基板加熱装置及び基板加熱方法
JP2008198739A (ja) * 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
JP2008218866A (ja) * 2007-03-07 2008-09-18 Elpida Memory Inc パターン形成方法およびパターン形成装置
JP5410174B2 (ja) * 2009-07-01 2014-02-05 株式会社日立国際電気 半導体装置の製造方法、基板処理方法および基板処理システム
JP2011066119A (ja) * 2009-09-16 2011-03-31 Toshiba Corp 半導体装置の製造装置および製造方法
JP5434800B2 (ja) * 2010-06-01 2014-03-05 東京エレクトロン株式会社 疎水化処理方法及び疎水化処理装置
WO2013065771A1 (ja) * 2011-11-01 2013-05-10 株式会社日立国際電気 半導体装置の製造方法、半導体装置の製造装置及び記録媒体
JP5673523B2 (ja) * 2011-12-28 2015-02-18 東京エレクトロン株式会社 基板処理方法、基板処理装置及び記憶媒体
US8703386B2 (en) * 2012-02-27 2014-04-22 International Business Machines Corporation Metal peroxo compounds with organic co-ligands for electron beam, deep UV and extreme UV photoresist applications
US9310684B2 (en) * 2013-08-22 2016-04-12 Inpria Corporation Organometallic solution based high resolution patterning compositions
JP6324800B2 (ja) * 2014-05-07 2018-05-16 東京エレクトロン株式会社 成膜方法および成膜装置
EP3229075B1 (en) * 2014-12-02 2021-01-06 JSR Corporation Photoresist composition, method for manufacturing same, and method for forming resist pattern
JP5963893B2 (ja) * 2015-01-09 2016-08-03 株式会社日立国際電気 基板処理装置、ガス分散ユニット、半導体装置の製造方法およびプログラム
JP5947435B1 (ja) * 2015-08-27 2016-07-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法、プログラムおよび記録媒体
JP6318139B2 (ja) * 2015-12-25 2018-04-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
JP6240712B1 (ja) * 2016-05-31 2017-11-29 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム

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