KR102434890B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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KR102434890B1
KR102434890B1 KR1020227022672A KR20227022672A KR102434890B1 KR 102434890 B1 KR102434890 B1 KR 102434890B1 KR 1020227022672 A KR1020227022672 A KR 1020227022672A KR 20227022672 A KR20227022672 A KR 20227022672A KR 102434890 B1 KR102434890 B1 KR 102434890B1
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히로나오 나카무라
료스케 오카와
쓰바사 이노우에
아키라 기무라
에이지 야스다
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누보톤 테크놀로지 재팬 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/63—Vertical IGFETs
    • H01L27/088—
    • H01L29/0688—
    • H01L29/086—
    • H01L29/0865—
    • H01L29/7813—
    • H—ELECTRICITY
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H—ELECTRICITY
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
    • H10D62/153—Impurity concentrations or distributions
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/152—Source regions of DMOS transistors
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
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    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
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    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
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    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/016—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including vertical IGFETs
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020227022672A 2021-09-17 2021-09-17 반도체 장치 Active KR102434890B1 (ko)

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PCT/JP2021/034220 WO2023042359A1 (ja) 2021-09-17 2021-09-17 半導体装置

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KR102434890B1 true KR102434890B1 (ko) 2022-08-22

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US (1) US11637176B2 (https=)
JP (1) JP7114824B1 (https=)
KR (1) KR102434890B1 (https=)
CN (1) CN115152032B (https=)
WO (1) WO2023042359A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7566609B2 (ja) * 2020-12-11 2024-10-15 株式会社東芝 半導体装置

Citations (5)

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US5366914A (en) 1992-01-29 1994-11-22 Nec Corporation Vertical power MOSFET structure having reduced cell area
JP3999225B2 (ja) 2004-01-27 2007-10-31 松下電器産業株式会社 半導体装置およびその製造方法
KR20190034547A (ko) * 2016-08-02 2019-04-02 파나소닉 아이피 매니지먼트 가부시키가이샤 반도체 장치, 반도체 모듈, 및 반도체 패키지 장치
JP2020038999A (ja) * 2018-06-19 2020-03-12 パナソニックＩｐマネジメント株式会社 半導体装置
KR20200097357A (ko) * 2018-12-19 2020-08-18 파나소닉 세미컨덕터 솔루션즈 가부시키가이샤 반도체 장치

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JP4194890B2 (ja) * 2003-06-24 2008-12-10 株式会社豊田中央研究所 半導体装置とその製造方法
US7372088B2 (en) 2004-01-27 2008-05-13 Matsushita Electric Industrial Co., Ltd. Vertical gate semiconductor device and method for fabricating the same
DE102005014743B4 (de) 2005-03-31 2013-12-05 Infineon Technologies Austria Ag MOS-Feldplattentrench-Transistoreinrichtung
JP5369372B2 (ja) * 2005-11-28 2013-12-18 富士電機株式会社 半導体装置および半導体装置の製造方法
JP5285242B2 (ja) * 2007-07-04 2013-09-11 ローム株式会社 半導体装置
US20090272982A1 (en) * 2008-03-03 2009-11-05 Fuji Electric Device Technology Co., Ltd. Trench gate type semiconductor device and method of producing the same
JP4670915B2 (ja) * 2008-08-08 2011-04-13 ソニー株式会社 半導体装置
JP2013197122A (ja) * 2012-03-15 2013-09-30 Toshiba Corp 半導体装置
JP2013258333A (ja) * 2012-06-13 2013-12-26 Toshiba Corp 電力用半導体装置
US10608104B2 (en) 2014-03-28 2020-03-31 Infineon Technologies Ag Trench transistor device
JP6871316B2 (ja) * 2014-04-15 2021-05-12 ローム株式会社 半導体装置および半導体装置の製造方法
JP6566512B2 (ja) 2014-04-15 2019-08-28 ローム株式会社 半導体装置および半導体装置の製造方法
JP6369173B2 (ja) * 2014-04-17 2018-08-08 富士電機株式会社 縦型半導体装置およびその製造方法
DE102014114832B4 (de) * 2014-10-13 2020-06-18 Infineon Technologies Austria Ag Halbleitervorrichtung und Verfahren zum Herstellen einer Halbleitervorrichtung
JP2016171341A (ja) * 2016-05-26 2016-09-23 ローム株式会社 半導体装置
JP6639365B2 (ja) 2016-09-16 2020-02-05 株式会社東芝 半導体装置
WO2018123799A1 (ja) * 2016-12-27 2018-07-05 パナソニックＩｐマネジメント株式会社 半導体装置
JP6817116B2 (ja) * 2017-03-14 2021-01-20 エイブリック株式会社 半導体装置
JP6870547B2 (ja) * 2017-09-18 2021-05-12 株式会社デンソー 半導体装置およびその製造方法
JP7140148B2 (ja) 2019-02-27 2022-09-21 株式会社デンソー 炭化珪素半導体装置およびその製造方法

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Publication number Priority date Publication date Assignee Title
US5366914A (en) 1992-01-29 1994-11-22 Nec Corporation Vertical power MOSFET structure having reduced cell area
JP3999225B2 (ja) 2004-01-27 2007-10-31 松下電器産業株式会社 半導体装置およびその製造方法
KR20190034547A (ko) * 2016-08-02 2019-04-02 파나소닉 아이피 매니지먼트 가부시키가이샤 반도체 장치, 반도체 모듈, 및 반도체 패키지 장치
KR20210014206A (ko) * 2016-08-02 2021-02-08 누보톤 테크놀로지 재팬 가부시키가이샤 반도체 장치, 반도체 모듈, 및 반도체 패키지 장치
JP2020038999A (ja) * 2018-06-19 2020-03-12 パナソニックＩｐマネジメント株式会社 半導体装置
KR20200097357A (ko) * 2018-12-19 2020-08-18 파나소닉 세미컨덕터 솔루션즈 가부시키가이샤 반도체 장치
KR20210016094A (ko) * 2018-12-19 2021-02-10 누보톤 테크놀로지 재팬 가부시키가이샤 반도체 장치

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JPWO2023042359A1 (https=) 2023-03-23
JP7114824B1 (ja) 2022-08-08
WO2023042359A1 (ja) 2023-03-23
US11637176B2 (en) 2023-04-25
US20230101684A1 (en) 2023-03-30
CN115152032B (zh) 2023-03-14
CN115152032A (zh) 2022-10-04

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