KR102386528B1 - 촬상 장치 - Google Patents

촬상 장치 Download PDF

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Publication number
KR102386528B1
KR102386528B1 KR1020150033343A KR20150033343A KR102386528B1 KR 102386528 B1 KR102386528 B1 KR 102386528B1 KR 1020150033343 A KR1020150033343 A KR 1020150033343A KR 20150033343 A KR20150033343 A KR 20150033343A KR 102386528 B1 KR102386528 B1 KR 102386528B1
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South Korea
Prior art keywords
transistor
semiconductor layer
addition
wiring
electrode
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Expired - Fee Related
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KR1020150033343A
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English (en)
Korean (ko)
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KR20150107633A (ko
Inventor
슌페이 야마자키
šœ페이 야마자키
마사유키 사카쿠라
요시유키 구로카와
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H01L27/14612—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H01L27/14616—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

Landscapes

  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020150033343A 2014-03-13 2015-03-10 촬상 장치 Expired - Fee Related KR102386528B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2014-050384 2014-03-13
JP2014050384 2014-03-13

Publications (2)

Publication Number Publication Date
KR20150107633A KR20150107633A (ko) 2015-09-23
KR102386528B1 true KR102386528B1 (ko) 2022-04-14

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Family Applications (1)

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KR1020150033343A Expired - Fee Related KR102386528B1 (ko) 2014-03-13 2015-03-10 촬상 장치

Country Status (3)

Country Link
US (1) US9324747B2 (https=)
JP (2) JP6846859B2 (https=)
KR (1) KR102386528B1 (https=)

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US9881954B2 (en) 2014-06-11 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Imaging device
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WO2016171369A1 (ko) * 2015-04-24 2016-10-27 경희대학교산학협력단 광증폭 포토트랜지스터를 포함하는 광반응성 센서, 상기 광반응성 센서를 포함하는 디스플레이 패널 및 차량 제어 시스템
US10163948B2 (en) * 2015-07-23 2018-12-25 Semiconductor Energy Laboratory Co., Ltd. Imaging device and electronic device
US10347681B2 (en) 2016-02-19 2019-07-09 Semiconductor Energy Laboratory Co., Ltd. Imaging device
US11367739B2 (en) 2017-06-27 2022-06-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic component
KR102936751B1 (ko) 2019-04-18 2026-03-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 릴레이 및 반도체 장치
WO2020234645A1 (en) * 2019-05-21 2020-11-26 Sony Semiconductor Solutions Corporation Dual mode imaging devices
JP7123860B2 (ja) 2019-06-17 2022-08-23 株式会社東芝 演算装置
KR102271442B1 (ko) * 2019-10-30 2021-07-01 한국과학기술연구원 피드백 전계 효과 트랜지스터 및 이를 포함하는 광 센서
US11194063B2 (en) 2019-12-30 2021-12-07 Rayence Co., Ltd. X-ray detector having driver micro integrated chips printed on photodiode layer
JP7446826B2 (ja) * 2020-01-23 2024-03-11 株式会社ジャパンディスプレイ 検出装置
CN113437098B (zh) * 2020-02-18 2024-11-26 刘洪斌 一种ct平板探测器及ct机
US11984508B2 (en) * 2021-02-24 2024-05-14 Taiwan Semiconductor Manufacturing Company Limited Thin film transistor including a compositionally-modulated active region and methods for forming the same
WO2023092554A1 (zh) * 2021-11-29 2023-06-01 京东方科技集团股份有限公司 薄膜晶体管及其制备方法、阵列基板和显示面板

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