KR102365988B1 - 고형분 농도 관리 방법 및 트리클로로실란의 제조 방법 - Google Patents

고형분 농도 관리 방법 및 트리클로로실란의 제조 방법 Download PDF

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Publication number
KR102365988B1
KR102365988B1 KR1020197012368A KR20197012368A KR102365988B1 KR 102365988 B1 KR102365988 B1 KR 102365988B1 KR 1020197012368 A KR1020197012368 A KR 1020197012368A KR 20197012368 A KR20197012368 A KR 20197012368A KR 102365988 B1 KR102365988 B1 KR 102365988B1
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South Korea
Prior art keywords
concentration
residue
solid content
crystallization
trichlorosilane
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KR1020197012368A
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English (en)
Korean (ko)
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KR20190072552A (ko
Inventor
준이치 이시다
마사미 에노쿠치
이사오 야마시타
요시카즈 고다마
히로유키 니시무라
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가부시끼가이샤 도꾸야마
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0004—Crystallisation cooling by heat exchange
    • B01D9/0013—Crystallisation cooling by heat exchange by indirect heat exchange
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
KR1020197012368A 2016-10-19 2017-10-06 고형분 농도 관리 방법 및 트리클로로실란의 제조 방법 KR102365988B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2016-205357 2016-10-19
JP2016205357 2016-10-19
PCT/JP2017/036493 WO2018074269A1 (fr) 2016-10-19 2017-10-06 Procédé de régulation de la concentration en contenu solide et procédé de production de trichlorosilane

Publications (2)

Publication Number Publication Date
KR20190072552A KR20190072552A (ko) 2019-06-25
KR102365988B1 true KR102365988B1 (ko) 2022-02-23

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KR1020197012368A KR102365988B1 (ko) 2016-10-19 2017-10-06 고형분 농도 관리 방법 및 트리클로로실란의 제조 방법

Country Status (8)

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US (1) US11034585B2 (fr)
EP (1) EP3530621B1 (fr)
JP (1) JP6446165B2 (fr)
KR (1) KR102365988B1 (fr)
CN (1) CN109843801B (fr)
SG (1) SG11201903260SA (fr)
TW (1) TWI762519B (fr)
WO (1) WO2018074269A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3962861A1 (fr) * 2019-04-29 2022-03-09 Wacker Chemie AG Procédé pour la production de trichlorosilane comprenant des particules de silicium à structure optimisée

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005029428A (ja) 2003-07-14 2005-02-03 Tokuyama Corp クロロシラン類の回収方法
JP2006001804A (ja) 2004-06-18 2006-01-05 Sumitomo Titanium Corp シリコン塩化物の製造方法およびそれを用いる多結晶シリコンの製造方法
JP2016028807A (ja) 2014-07-17 2016-03-03 株式会社平間理化研究所 固体粒子回収除去装置、液体管理装置及びエッチング液管理装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1575726A (en) * 1977-05-09 1980-09-24 Alcan Res & Dev Method and apparatus for particle size analysis
JPS6053043A (ja) 1983-09-02 1985-03-26 Toshiba Corp 半導体集積回路装置
JPS6053043U (ja) * 1983-09-21 1985-04-13 石川島播磨重工業株式会社 結晶装置用サンプリング装置
DE4126670A1 (de) * 1991-08-13 1993-02-18 Huels Chemische Werke Ag Verfahren zur abwasserfreien aufarbeitung von rueckstaenden einer chlorsilandestillation mit salzsaeure
DE10056194A1 (de) 2000-11-13 2002-05-29 Solarworld Ag Verfahren zur Entfernung von Aluminium aus Chlorsilanen
DE10061682A1 (de) * 2000-12-11 2002-07-04 Solarworld Ag Verfahren zur Herstellung von Reinstsilicium
JP5396954B2 (ja) * 2008-03-24 2014-01-22 三菱マテリアル株式会社 クロロシランの精製装置及びクロロシラン製造方法
US8298490B2 (en) 2009-11-06 2012-10-30 Gtat Corporation Systems and methods of producing trichlorosilane
JP5535679B2 (ja) 2010-02-18 2014-07-02 株式会社トクヤマ トリクロロシランの製造方法
JP5686055B2 (ja) 2011-06-28 2015-03-18 三菱マテリアル株式会社 トリクロロシラン製造方法
CN102659116A (zh) * 2012-04-28 2012-09-12 四川新光硅业科技有限责任公司 三氯氢硅合成气的除尘方法
JP6275440B2 (ja) * 2013-01-21 2018-02-07 株式会社 堀場アドバンスドテクノ 濁度計

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005029428A (ja) 2003-07-14 2005-02-03 Tokuyama Corp クロロシラン類の回収方法
JP2006001804A (ja) 2004-06-18 2006-01-05 Sumitomo Titanium Corp シリコン塩化物の製造方法およびそれを用いる多結晶シリコンの製造方法
JP2016028807A (ja) 2014-07-17 2016-03-03 株式会社平間理化研究所 固体粒子回収除去装置、液体管理装置及びエッチング液管理装置

Also Published As

Publication number Publication date
WO2018074269A1 (fr) 2018-04-26
CN109843801B (zh) 2022-07-08
TW201817680A (zh) 2018-05-16
CN109843801A (zh) 2019-06-04
US11034585B2 (en) 2021-06-15
US20190248659A1 (en) 2019-08-15
KR20190072552A (ko) 2019-06-25
SG11201903260SA (en) 2019-05-30
EP3530621B1 (fr) 2021-12-01
EP3530621A4 (fr) 2020-04-22
EP3530621A1 (fr) 2019-08-28
JPWO2018074269A1 (ja) 2019-01-10
TWI762519B (zh) 2022-05-01
JP6446165B2 (ja) 2018-12-26

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