SG11201903260SA - Method for controlling concentration of solid content and method for producing trichlorosilane - Google Patents

Method for controlling concentration of solid content and method for producing trichlorosilane

Info

Publication number
SG11201903260SA
SG11201903260SA SG11201903260SA SG11201903260SA SG11201903260SA SG 11201903260S A SG11201903260S A SG 11201903260SA SG 11201903260S A SG11201903260S A SG 11201903260SA SG 11201903260S A SG11201903260S A SG 11201903260SA SG 11201903260S A SG11201903260S A SG 11201903260SA
Authority
SG
Singapore
Prior art keywords
concentration
solid substance
solid content
producing trichlorosilane
controlling concentration
Prior art date
Application number
SG11201903260SA
Other languages
English (en)
Inventor
Junichi Ishida
Masami Enokuchi
Isao Yamashita
Yoshikazu Kodama
Hiroyuki Nishimura
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of SG11201903260SA publication Critical patent/SG11201903260SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D9/00—Crystallisation
    • B01D9/0004—Crystallisation cooling by heat exchange
    • B01D9/0013—Crystallisation cooling by heat exchange by indirect heat exchange
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Silicon Compounds (AREA)
SG11201903260SA 2016-10-19 2017-10-06 Method for controlling concentration of solid content and method for producing trichlorosilane SG11201903260SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016205357 2016-10-19
PCT/JP2017/036493 WO2018074269A1 (fr) 2016-10-19 2017-10-06 Procédé de régulation de la concentration en contenu solide et procédé de production de trichlorosilane

Publications (1)

Publication Number Publication Date
SG11201903260SA true SG11201903260SA (en) 2019-05-30

Family

ID=62018667

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201903260SA SG11201903260SA (en) 2016-10-19 2017-10-06 Method for controlling concentration of solid content and method for producing trichlorosilane

Country Status (8)

Country Link
US (1) US11034585B2 (fr)
EP (1) EP3530621B1 (fr)
JP (1) JP6446165B2 (fr)
KR (1) KR102365988B1 (fr)
CN (1) CN109843801B (fr)
SG (1) SG11201903260SA (fr)
TW (1) TWI762519B (fr)
WO (1) WO2018074269A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113795462A (zh) * 2019-04-29 2021-12-14 瓦克化学股份公司 用结构优化的硅颗粒生产三氯硅烷的方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1575726A (en) * 1977-05-09 1980-09-24 Alcan Res & Dev Method and apparatus for particle size analysis
JPS6053043A (ja) 1983-09-02 1985-03-26 Toshiba Corp 半導体集積回路装置
JPS6053043U (ja) * 1983-09-21 1985-04-13 石川島播磨重工業株式会社 結晶装置用サンプリング装置
DE4126670A1 (de) * 1991-08-13 1993-02-18 Huels Chemische Werke Ag Verfahren zur abwasserfreien aufarbeitung von rueckstaenden einer chlorsilandestillation mit salzsaeure
DE10056194A1 (de) * 2000-11-13 2002-05-29 Solarworld Ag Verfahren zur Entfernung von Aluminium aus Chlorsilanen
DE10061682A1 (de) * 2000-12-11 2002-07-04 Solarworld Ag Verfahren zur Herstellung von Reinstsilicium
JP4463502B2 (ja) * 2003-07-14 2010-05-19 株式会社トクヤマ クロロシラン類の回収方法
JP4128983B2 (ja) * 2004-06-18 2008-07-30 株式会社大阪チタニウムテクノロジーズ シリコン塩化物の製造方法およびそれを用いる多結晶シリコンの製造方法
EP2105410B1 (fr) * 2008-03-24 2014-03-12 Mitsubishi Materials Corporation Appareil de purification de chlorosilanes et procédé de purification de chlorosilanes
US8298490B2 (en) * 2009-11-06 2012-10-30 Gtat Corporation Systems and methods of producing trichlorosilane
JP5535679B2 (ja) 2010-02-18 2014-07-02 株式会社トクヤマ トリクロロシランの製造方法
JP5686055B2 (ja) * 2011-06-28 2015-03-18 三菱マテリアル株式会社 トリクロロシラン製造方法
CN102659116A (zh) * 2012-04-28 2012-09-12 四川新光硅业科技有限责任公司 三氯氢硅合成气的除尘方法
JP6275440B2 (ja) * 2013-01-21 2018-02-07 株式会社 堀場アドバンスドテクノ 濁度計
KR20160010259A (ko) * 2014-07-17 2016-01-27 가부시키가이샤 히라마 리카 켄큐쇼 고체입자 회수 제거장치, 액체 관리장치 및 에칭액 관리장치

Also Published As

Publication number Publication date
JPWO2018074269A1 (ja) 2019-01-10
CN109843801A (zh) 2019-06-04
EP3530621A1 (fr) 2019-08-28
KR20190072552A (ko) 2019-06-25
US11034585B2 (en) 2021-06-15
JP6446165B2 (ja) 2018-12-26
EP3530621A4 (fr) 2020-04-22
TWI762519B (zh) 2022-05-01
TW201817680A (zh) 2018-05-16
CN109843801B (zh) 2022-07-08
KR102365988B1 (ko) 2022-02-23
WO2018074269A1 (fr) 2018-04-26
US20190248659A1 (en) 2019-08-15
EP3530621B1 (fr) 2021-12-01

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