SG10201806742VA - Method and apparatus for determining process parameters - Google Patents
Method and apparatus for determining process parametersInfo
- Publication number
- SG10201806742VA SG10201806742VA SG10201806742VA SG10201806742VA SG10201806742VA SG 10201806742V A SG10201806742V A SG 10201806742VA SG 10201806742V A SG10201806742V A SG 10201806742VA SG 10201806742V A SG10201806742V A SG 10201806742VA SG 10201806742V A SG10201806742V A SG 10201806742VA
- Authority
- SG
- Singapore
- Prior art keywords
- time trace
- concentration
- gas
- product
- process parameters
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 7
- 239000006227 byproduct Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3504—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing gases, e.g. multi-gas analysis
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
Abstract
METHODAND APPARATUS FOR DETERMINING PROCESS PARAMETERS OF THE DISCLOSURE A method for processing a substrate in a processing chamber using at least one time trace based prediction model is provided. A substrate is dry processed, where the dry processing creates at least one gas by-product. A concentration of the at least one gas by- product is measured. A time trace of the concentration of the at least one gas by-product is determined. The determined time trace of the concentration is provided as input for the at least one time trace based prediction model to obtain at least one process output. The at least one process output is used to adjust at least one process parameter. Fig. lA
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/783,301 US10784174B2 (en) | 2017-10-13 | 2017-10-13 | Method and apparatus for determining etch process parameters |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10201806742VA true SG10201806742VA (en) | 2019-05-30 |
Family
ID=66096010
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201806742VA SG10201806742VA (en) | 2017-10-13 | 2018-08-08 | Method and apparatus for determining process parameters |
Country Status (5)
Country | Link |
---|---|
US (1) | US10784174B2 (en) |
JP (1) | JP7189719B2 (en) |
KR (1) | KR20190041908A (en) |
CN (1) | CN109671624B (en) |
SG (1) | SG10201806742VA (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10921245B2 (en) * | 2018-06-08 | 2021-02-16 | Ball Aerospace & Technologies Corp. | Method and systems for remote emission detection and rate determination |
WO2020094325A1 (en) * | 2018-11-07 | 2020-05-14 | Asml Netherlands B.V. | Determining a correction to a process |
KR102279045B1 (en) | 2019-08-08 | 2021-07-16 | 연세대학교 산학협력단 | Apparatus and method for generating control data of polishing process and control device comprising the same |
US11556117B2 (en) * | 2019-10-21 | 2023-01-17 | Applied Materials, Inc. | Real-time anomaly detection and classification during semiconductor processing |
CN111366692B (en) * | 2020-04-16 | 2022-11-22 | 北方工业大学 | Gas environment parameter monitoring system and method |
CN112861441B (en) * | 2021-03-10 | 2023-05-26 | 中国石油大学(北京) | Method and device for determining reservoir inspiration profile based on cyclic neural network |
Family Cites Families (50)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AT376301B (en) | 1982-05-06 | 1984-11-12 | List Hans | METHOD FOR CONTINUOUSLY MEASURING THE MASS OF AEOROSOL PARTICLES IN GASEOUS SAMPLES, AND APPARATUS FOR CARRYING OUT THE METHOD |
JP3194022B2 (en) * | 1992-07-06 | 2001-07-30 | 東京エレクトロン株式会社 | Control device for plasma surface treatment |
US5463460A (en) | 1993-07-08 | 1995-10-31 | Applied Materials, Inc. | Particle monitoring sensor |
JPH07263415A (en) | 1994-03-18 | 1995-10-13 | Fujitsu Ltd | Method of manufacturing semiconductor device |
US6185472B1 (en) * | 1995-12-28 | 2001-02-06 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method, manufacturing apparatus, simulation method and simulator |
US5949537A (en) | 1996-04-18 | 1999-09-07 | American Air Liquide Inc. | In-line cell for absorption spectroscopy |
US6351683B1 (en) | 1997-09-17 | 2002-02-26 | Tokyo Electron Limited | System and method for monitoring and controlling gas plasma processes |
US5966586A (en) * | 1997-09-26 | 1999-10-12 | Lam Research Corporation | Endpoint detection methods in plasma etch processes and apparatus therefor |
JP2000195766A (en) * | 1998-12-25 | 2000-07-14 | Toshiba Corp | Simulation device, simulation method, recording medium storing simulation program, and manufacture of solid- state electronic device |
JP4387573B2 (en) | 1999-10-26 | 2009-12-16 | 東京エレクトロン株式会社 | Process exhaust gas monitoring apparatus and method, semiconductor manufacturing apparatus, and semiconductor manufacturing apparatus management system and method |
US6442736B1 (en) * | 2000-10-03 | 2002-08-27 | L'air Liquide Societe Anonyme A Directoire Et Conseil De Surveillance Pour L'etude Et L'expolitation Des Procedes Georges Claude | Semiconductor processing system and method for controlling moisture level therein |
US6336841B1 (en) | 2001-03-29 | 2002-01-08 | Macronix International Co. Ltd. | Method of CMP endpoint detection |
US7598509B2 (en) | 2004-11-01 | 2009-10-06 | Cymer, Inc. | Laser produced plasma EUV light source |
JP2003077782A (en) | 2001-08-31 | 2003-03-14 | Toshiba Corp | Manufacturing method for semiconductor device |
US6616759B2 (en) * | 2001-09-06 | 2003-09-09 | Hitachi, Ltd. | Method of monitoring and/or controlling a semiconductor manufacturing apparatus and a system therefor |
JP3891848B2 (en) | 2002-01-17 | 2007-03-14 | 東京エレクトロン株式会社 | Processing apparatus and processing method |
NO316113B1 (en) | 2002-01-24 | 2003-12-15 | Proanalysis As | Method, probe and system for laser-based cleaning mechanism |
US6617175B1 (en) | 2002-05-08 | 2003-09-09 | Advanced Technology Materials, Inc. | Infrared thermopile detector system for semiconductor process monitoring and control |
AU2003256257A1 (en) * | 2002-06-28 | 2004-01-19 | Tokyo Electron Limited | Controlling a material processing tool and performance data |
US6665623B1 (en) * | 2002-07-31 | 2003-12-16 | Advanced Micro Devices, Inc. | Method and apparatus for optimizing downstream uniformity |
TWI276802B (en) | 2002-08-13 | 2007-03-21 | Lam Res Corp | Process endpoint detection method using broadband reflectometry |
KR100638948B1 (en) * | 2002-08-28 | 2006-10-25 | 도쿄 엘렉트론 리미티드 | Method and system for dynamic modeling and recipe optimization of semiconductor etch processes |
JP3799314B2 (en) | 2002-09-27 | 2006-07-19 | 株式会社日立ハイテクノロジーズ | Etching processing apparatus and etching processing method |
US6927076B2 (en) | 2002-10-05 | 2005-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Method for recovering a plasma process |
US20060021633A1 (en) | 2004-07-27 | 2006-02-02 | Applied Materials, Inc. | Closed loop clean gas control |
US7301640B2 (en) | 2004-12-21 | 2007-11-27 | Honeywell International, Inc. | System and method of condensation reduction in an electrical unit |
WO2006085646A1 (en) | 2005-02-14 | 2006-08-17 | Japan Science And Technology Agency | Apparatus for gas concentration measuring according to gas correlation method |
US7442274B2 (en) | 2005-03-28 | 2008-10-28 | Tokyo Electron Limited | Plasma etching method and apparatus therefor |
US8158526B2 (en) | 2006-10-30 | 2012-04-17 | Applied Materials, Inc. | Endpoint detection for photomask etching |
US20090316749A1 (en) | 2008-06-23 | 2009-12-24 | Matthew Fenton Davis | Substrate temperature measurement by infrared transmission in an etch process |
US8452733B2 (en) | 2008-10-17 | 2013-05-28 | Oracle International Corporation | Data decay management |
US20100190098A1 (en) | 2009-01-27 | 2010-07-29 | Applied Materials, Inc. | Infrared endpoint detection for photoresist strip processes |
US8304752B2 (en) | 2009-04-10 | 2012-11-06 | Cymer, Inc. | EUV light producing system and method utilizing an alignment laser |
EP2487480B1 (en) | 2011-02-09 | 2014-01-15 | ABB Technology AG | Optical sensor element and optical sample analysing apparatus |
US8193007B1 (en) * | 2011-02-17 | 2012-06-05 | Tokyo Electron Limited | Etch process control using optical metrology and sensor devices |
US8531659B2 (en) | 2011-03-24 | 2013-09-10 | The Laser Sensing Company | Multipass cell using spherical mirrors while achieving dense spot patterns |
JP2013084918A (en) | 2011-09-27 | 2013-05-09 | Hitachi Kokusai Electric Inc | Substrate processing apparatus, manufacturing method of semiconductor device, and program |
US8747686B2 (en) * | 2012-01-27 | 2014-06-10 | Applied Materials, Inc. | Methods of end point detection for substrate fabrication processes |
JP2013161913A (en) | 2012-02-03 | 2013-08-19 | Tokyo Electron Ltd | Plasma processing apparatus and plasma processing method |
WO2014109126A1 (en) | 2013-01-11 | 2014-07-17 | 富士電機株式会社 | Laser-type gas analyzer |
DK2948761T3 (en) | 2013-01-23 | 2023-09-04 | California Inst Of Techn | Tunable miniature laser spectrometer for detecting a trace gas |
JP6403577B2 (en) | 2013-02-05 | 2018-10-10 | 株式会社Kokusai Electric | Cleaning method, semiconductor device manufacturing method, substrate processing apparatus and program, and cleaning end determination method |
JP2014199856A (en) | 2013-03-29 | 2014-10-23 | 東京エレクトロン株式会社 | Method for operating vertical heat treatment device, storage medium, and vertical heat treatment device |
US10153141B2 (en) * | 2014-02-14 | 2018-12-11 | Electronics And Telecommunications Research Institute | Apparatus for monitoring gas and plasma process equipment including the same |
US20160139038A1 (en) | 2014-11-19 | 2016-05-19 | Nxp B.V. | Gas sensor |
US9735069B2 (en) * | 2015-09-23 | 2017-08-15 | Lam Research Corporation | Method and apparatus for determining process rate |
US20170084426A1 (en) | 2015-09-23 | 2017-03-23 | Lam Research Corporation | Apparatus for determining process rate |
JP6523119B2 (en) | 2015-09-28 | 2019-05-29 | 株式会社Kokusai Electric | Semiconductor device manufacturing method, substrate processing apparatus and program |
JP6584350B2 (en) * | 2016-03-17 | 2019-10-02 | 東京エレクトロン株式会社 | Control device, substrate processing system, substrate processing method and program |
CN115356434B (en) * | 2022-07-14 | 2023-06-02 | 福建省杭氟电子材料有限公司 | Gas monitoring system and method for hexafluorobutadiene storage place |
-
2017
- 2017-10-13 US US15/783,301 patent/US10784174B2/en active Active
-
2018
- 2018-08-08 SG SG10201806742VA patent/SG10201806742VA/en unknown
- 2018-08-21 KR KR1020180097209A patent/KR20190041908A/en not_active Application Discontinuation
- 2018-08-30 CN CN201811002112.5A patent/CN109671624B/en active Active
- 2018-10-03 JP JP2018188050A patent/JP7189719B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP7189719B2 (en) | 2022-12-14 |
US20190115267A1 (en) | 2019-04-18 |
KR20190041908A (en) | 2019-04-23 |
CN109671624A (en) | 2019-04-23 |
JP2019075555A (en) | 2019-05-16 |
US10784174B2 (en) | 2020-09-22 |
CN109671624B (en) | 2024-02-20 |
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