KR102325870B1 - 단일 확산 단절부를 fet 소자의 나노채널 구조물 내에 통합하기 위한 방법 및 소자 - Google Patents

단일 확산 단절부를 fet 소자의 나노채널 구조물 내에 통합하기 위한 방법 및 소자 Download PDF

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KR102325870B1
KR102325870B1 KR1020207006611A KR20207006611A KR102325870B1 KR 102325870 B1 KR102325870 B1 KR 102325870B1 KR 1020207006611 A KR1020207006611 A KR 1020207006611A KR 20207006611 A KR20207006611 A KR 20207006611A KR 102325870 B1 KR102325870 B1 KR 102325870B1
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nanochannel
region
dummy
active
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제프리 스미스
안톤 데빌리어스
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도쿄엘렉트론가부시키가이샤
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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
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  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1020207006611A 2017-08-16 2018-08-16 단일 확산 단절부를 fet 소자의 나노채널 구조물 내에 통합하기 위한 방법 및 소자 KR102325870B1 (ko)

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Application Number Priority Date Filing Date Title
US201762546549P 2017-08-16 2017-08-16
US62/546,549 2017-08-16
PCT/US2018/000218 WO2019035945A1 (en) 2017-08-16 2018-08-16 METHOD AND DEVICE FOR INCORPORATING SINGLE DIFFUSION BREAK IN NANOCANAL STRUCTURES OF FET DEVICES

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KR102325870B1 true KR102325870B1 (ko) 2021-11-11

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US (2) US10734224B2 (zh)
JP (1) JP7019029B2 (zh)
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