KR102309246B1 - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR102309246B1
KR102309246B1 KR1020217011689A KR20217011689A KR102309246B1 KR 102309246 B1 KR102309246 B1 KR 102309246B1 KR 1020217011689 A KR1020217011689 A KR 1020217011689A KR 20217011689 A KR20217011689 A KR 20217011689A KR 102309246 B1 KR102309246 B1 KR 102309246B1
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South Korea
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conductive layer
transistor
layer
oxide semiconductor
conductive
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Korean (ko)
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KR20210046849A (ko
Inventor
슌뻬이 야마자끼
šœ뻬이 야마자끼
히로미찌 고도
히데오미 스자와
신야 사사가와
모또무 구라따
마유미 미까미
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority to KR1020217031293A priority Critical patent/KR102364878B1/ko
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    • H01L29/41733—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H01L29/45—
    • H01L29/7869—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor

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  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Volatile Memory (AREA)
  • Bipolar Transistors (AREA)
  • Noodles (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
KR1020217011689A 2010-01-22 2010-12-24 반도체 장치 Active KR102309246B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020217031293A KR102364878B1 (ko) 2010-01-22 2010-12-24 트랜지스터

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2010-012540 2010-01-22
JP2010012540 2010-01-22
PCT/JP2010/073886 WO2011089846A1 (en) 2010-01-22 2010-12-24 Semiconductor device
KR1020207031465A KR102244389B1 (ko) 2010-01-22 2010-12-24 반도체 장치

Related Parent Applications (1)

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KR1020207031465A Division KR102244389B1 (ko) 2010-01-22 2010-12-24 반도체 장치

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020217031293A Division KR102364878B1 (ko) 2010-01-22 2010-12-24 트랜지스터

Publications (2)

Publication Number Publication Date
KR20210046849A KR20210046849A (ko) 2021-04-28
KR102309246B1 true KR102309246B1 (ko) 2021-10-06

Family

ID=44306654

Family Applications (9)

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KR1020207006694A Active KR102174859B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020187006866A Active KR101952555B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020207031465A Active KR102244389B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020217011689A Active KR102309246B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020127019408A Expired - Fee Related KR101844085B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020197017627A Active KR102088281B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020217031293A Active KR102364878B1 (ko) 2010-01-22 2010-12-24 트랜지스터
KR1020147002872A Active KR101637789B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020197004850A Active KR101993584B1 (ko) 2010-01-22 2010-12-24 반도체 장치

Family Applications Before (3)

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KR1020207006694A Active KR102174859B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020187006866A Active KR101952555B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020207031465A Active KR102244389B1 (ko) 2010-01-22 2010-12-24 반도체 장치

Family Applications After (5)

Application Number Title Priority Date Filing Date
KR1020127019408A Expired - Fee Related KR101844085B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020197017627A Active KR102088281B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020217031293A Active KR102364878B1 (ko) 2010-01-22 2010-12-24 트랜지스터
KR1020147002872A Active KR101637789B1 (ko) 2010-01-22 2010-12-24 반도체 장치
KR1020197004850A Active KR101993584B1 (ko) 2010-01-22 2010-12-24 반도체 장치

Country Status (6)

Country Link
US (1) US8492840B2 (enExample)
JP (9) JP5714340B2 (enExample)
KR (9) KR102174859B1 (enExample)
CN (2) CN103779426B (enExample)
TW (11) TWI628799B (enExample)
WO (1) WO2011089846A1 (enExample)

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JP6204145B2 (ja) 2012-10-23 2017-09-27 株式会社半導体エネルギー研究所 半導体装置
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JP6329762B2 (ja) 2012-12-28 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
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