KR102254104B1 - 반도체 패키지 - Google Patents

반도체 패키지 Download PDF

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KR102254104B1
KR102254104B1 KR1020140130335A KR20140130335A KR102254104B1 KR 102254104 B1 KR102254104 B1 KR 102254104B1 KR 1020140130335 A KR1020140130335 A KR 1020140130335A KR 20140130335 A KR20140130335 A KR 20140130335A KR 102254104 B1 KR102254104 B1 KR 102254104B1
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semiconductor chip
semiconductor
package
stacked
base substrate
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Korean (ko)
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KR20160037582A (ko
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조차제
임윤혁
조태제
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삼성전자주식회사
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Priority to KR1020140130335A priority Critical patent/KR102254104B1/ko
Priority to US14/804,880 priority patent/US9589945B2/en
Priority to JP2015187642A priority patent/JP6584258B2/ja
Publication of KR20160037582A publication Critical patent/KR20160037582A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/10—Arrangements for heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H10W20/4424—Copper alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/73—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control for cooling by change of state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07354—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/341—Dispositions of die-attach connectors, e.g. layouts
    • H10W72/347—Dispositions of multiple die-attach connectors
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/877—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/114—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations
    • H10W74/117—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed by a substrate and the encapsulations the substrate having spherical bumps for external connection
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/288—Configurations of stacked chips characterised by arrangements for thermal management of the stacked chips
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
KR1020140130335A 2014-09-29 2014-09-29 반도체 패키지 Active KR102254104B1 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020140130335A KR102254104B1 (ko) 2014-09-29 2014-09-29 반도체 패키지
US14/804,880 US9589945B2 (en) 2014-09-29 2015-07-21 Semiconductor package having stacked semiconductor chips
JP2015187642A JP6584258B2 (ja) 2014-09-29 2015-09-25 半導体パッケージ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020140130335A KR102254104B1 (ko) 2014-09-29 2014-09-29 반도체 패키지

Publications (2)

Publication Number Publication Date
KR20160037582A KR20160037582A (ko) 2016-04-06
KR102254104B1 true KR102254104B1 (ko) 2021-05-20

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US (1) US9589945B2 (enExample)
JP (1) JP6584258B2 (enExample)
KR (1) KR102254104B1 (enExample)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11901325B2 (en) * 2015-01-13 2024-02-13 Dexerials Corporation Multilayer substrate
US10535633B2 (en) 2015-07-02 2020-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Chip package having die structures of different heights and method of forming same
US9806058B2 (en) * 2015-07-02 2017-10-31 Taiwan Semiconductor Manufacturing Company, Ltd. Chip package having die structures of different heights and method of forming same
US10269682B2 (en) * 2015-10-09 2019-04-23 Taiwan Semiconductor Manufacturing Company, Ltd. Cooling devices, packaged semiconductor devices, and methods of packaging semiconductor devices
CN107436204A (zh) * 2016-05-28 2017-12-05 鸿富锦精密工业（深圳）有限公司 感测装置
US9918407B2 (en) * 2016-08-02 2018-03-13 Qualcomm Incorporated Multi-layer heat dissipating device comprising heat storage capabilities, for an electronic device
KR101942727B1 (ko) * 2016-09-12 2019-01-28 삼성전기 주식회사 팬-아웃 반도체 패키지
KR102605617B1 (ko) 2016-11-10 2023-11-23 삼성전자주식회사 적층 반도체 패키지
US10109616B2 (en) * 2016-12-22 2018-10-23 Intel Corporation High bandwidth, low profile multi-die package
US10461014B2 (en) 2017-08-31 2019-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Heat spreading device and method
CN111052368B (zh) * 2017-09-28 2025-02-14 英特尔公司 有源硅上封装半导体封装
KR101963293B1 (ko) * 2017-11-01 2019-03-28 삼성전기주식회사 팬-아웃 반도체 패키지
US10312219B2 (en) * 2017-11-08 2019-06-04 Micron Technology, Inc. Semiconductor device assemblies including multiple shingled stacks of semiconductor dies
KR102460720B1 (ko) * 2017-11-16 2022-10-31 삼성전자주식회사 반도체 소자 패키지를 포함하는 전자 장치
KR102439761B1 (ko) * 2017-12-22 2022-09-02 삼성전자주식회사 전자 장치 및 전자 장치의 제조 방법
JP6989426B2 (ja) * 2018-03-22 2022-01-05 キオクシア株式会社 半導体装置およびその製造方法
KR102566974B1 (ko) 2018-07-11 2023-08-16 삼성전자주식회사 반도체 패키지
US10840229B2 (en) 2018-11-05 2020-11-17 Micron Technology, Inc. Graphics processing unit and high bandwidth memory integration using integrated interface and silicon interposer
KR102480014B1 (ko) * 2018-11-23 2022-12-21 삼성전자 주식회사 반도체 패키지 및 그의 제조 방법
US11062971B2 (en) * 2019-01-08 2021-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method and equipment for forming the same
CN113474887B (zh) * 2019-01-30 2024-08-06 超极存储器股份有限公司 半导体模块、半导体部件及其制造方法
KR102661833B1 (ko) 2019-04-17 2024-05-02 삼성전자주식회사 반도체 패키지
US12007170B2 (en) 2019-08-06 2024-06-11 Intel Corporation Thermal management in integrated circuit packages
US20210043573A1 (en) * 2019-08-06 2021-02-11 Intel Corporation Thermal management in integrated circuit packages
US11830787B2 (en) 2019-08-06 2023-11-28 Intel Corporation Thermal management in integrated circuit packages
US11784108B2 (en) 2019-08-06 2023-10-10 Intel Corporation Thermal management in integrated circuit packages
US11205630B2 (en) 2019-09-27 2021-12-21 Intel Corporation Vias in composite IC chip structures
US11094672B2 (en) 2019-09-27 2021-08-17 Intel Corporation Composite IC chips including a chiplet embedded within metallization layers of a host IC chip
US10998302B2 (en) * 2019-09-27 2021-05-04 Intel Corporation Packaged device with a chiplet comprising memory resources
KR102717855B1 (ko) 2019-11-28 2024-10-15 삼성전자주식회사 반도체 패키지
CN113035801A (zh) * 2019-12-25 2021-06-25 台湾积体电路制造股份有限公司 存储器装置及其制造方法
KR102922366B1 (ko) * 2020-11-26 2026-02-05 삼성전자주식회사 반도체 패키지
US12009282B2 (en) 2021-03-11 2024-06-11 Meiko Electronics Co., Ltd. Memory device and memory device module
CN113380783B (zh) * 2021-08-11 2021-11-19 新华三半导体技术有限公司 一种集成电路封装结构及网络芯片
US12593672B2 (en) * 2022-02-17 2026-03-31 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit package and method
KR20240011485A (ko) * 2022-07-19 2024-01-26 삼성전자주식회사 반도체 패키지
KR20240071733A (ko) * 2022-11-16 2024-05-23 삼성전자주식회사 반도체 패키지
DE102025105390A1 (de) * 2024-02-15 2025-08-21 Rivian Ip Holdings, Llc Multi-chip-modul-gehäusetechnologie für die anwendung eines fortschrittlichen fahrerassistenzsystems
TWI914949B (zh) * 2024-09-04 2026-02-11 華泰電子股份有限公司 半導體封裝件及其製法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014179612A (ja) 2013-03-14 2014-09-25 General Electric Co <Ge> パワーオーバーレイ構造およびその製造方法

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0708481A3 (en) 1994-10-20 1997-04-02 Hughes Aircraft Co Improved thermal bumps for higher performance flipchip type monolithic integrated circuits and manufacturing processes
TW413874B (en) 1999-04-12 2000-12-01 Siliconware Precision Industries Co Ltd BGA semiconductor package having exposed heat dissipation layer and its manufacturing method
US6988531B2 (en) 2002-01-11 2006-01-24 Intel Corporation Micro-chimney and thermosiphon die-level cooling
JP4340517B2 (ja) * 2003-10-30 2009-10-07 Ｏｋｉセミコンダクタ株式会社 半導体装置及びその製造方法
JP4205613B2 (ja) * 2004-03-01 2009-01-07 エルピーダメモリ株式会社 半導体装置
US20070227700A1 (en) 2006-03-29 2007-10-04 Dimitrakopoulos Christos D VLSI chip hot-spot minimization using nanotubes
US7638874B2 (en) 2006-06-23 2009-12-29 Intel Corporation Microelectronic package including temperature sensor connected to the package substrate and method of forming same
KR100777926B1 (ko) * 2006-08-29 2007-11-21 동부일렉트로닉스 주식회사 반도체 소자 및 그 제조방법
KR100874910B1 (ko) * 2006-10-30 2008-12-19 삼성전자주식회사 수직형 열방출 통로를 갖는 적층형 반도체 패키지 및 그제조방법
US8436465B2 (en) * 2007-03-06 2013-05-07 Nikon Corporation Semiconductor device and method for manufacturing the semiconductor device
US20090084931A1 (en) 2007-09-27 2009-04-02 Intel Corporation Enabling bare die liquid cooling for the bare die and hot spots
US20090305463A1 (en) 2008-06-06 2009-12-10 International Business Machines Corporation System and Method for Thermal Optimized Chip Stacking
KR101004842B1 (ko) 2008-07-25 2010-12-28 삼성전기주식회사 전자 칩 모듈
JP2010161184A (ja) 2009-01-08 2010-07-22 Hitachi Ltd 半導体装置
US7838988B1 (en) 2009-05-28 2010-11-23 Texas Instruments Incorporated Stud bumps as local heat sinks during transient power operations
US8017439B2 (en) 2010-01-26 2011-09-13 Texas Instruments Incorporated Dual carrier for joining IC die or wafers to TSV wafers
US8633597B2 (en) 2010-03-01 2014-01-21 Qualcomm Incorporated Thermal vias in an integrated circuit package with an embedded die
KR20120005185A (ko) * 2010-07-08 2012-01-16 주식회사 하이닉스반도체 스택 패키지
DE102010040068A1 (de) 2010-08-31 2012-03-01 GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG Bewertung der thermisch-mechanischen Eigenschaften komplexer Halbleiterbauelemente durch integrierte Heizsysteme
KR101711048B1 (ko) * 2010-10-07 2017-03-02 삼성전자 주식회사 차폐막을 포함하는 반도체 장치 및 제조 방법
US8378453B2 (en) 2011-04-29 2013-02-19 Georgia Tech Research Corporation Devices including composite thermal capacitors
FR2978870B1 (fr) 2011-08-01 2016-11-18 Commissariat Energie Atomique Dispositif de localisation de points chauds avec des fluxmetres thermiques
JP2013045863A (ja) * 2011-08-24 2013-03-04 Elpida Memory Inc 半導体装置およびその製造方法
KR20130042936A (ko) * 2011-10-19 2013-04-29 에스케이하이닉스 주식회사 칩 캐리어, 이를 이용한 반도체 칩, 반도체 패키지, 및 그 제조방법들
KR20130044052A (ko) * 2011-10-21 2013-05-02 에스케이하이닉스 주식회사 적층 반도체 패키지
EP2786409A4 (en) * 2011-12-01 2015-09-09 Conversant Intellectual Property Man Inc CPU WITH STACKED MEMORY
US9129929B2 (en) 2012-04-19 2015-09-08 Sony Corporation Thermal package with heat slug for die stacks
KR20140024593A (ko) * 2012-08-20 2014-03-03 에스케이하이닉스 주식회사 시스템 패키지
KR102031731B1 (ko) * 2012-12-18 2019-10-14 삼성전자주식회사 반도체 패키지 및 이의 제조방법
KR20150005113A (ko) * 2013-07-04 2015-01-14 에스케이하이닉스 주식회사 광학 신호 경로를 포함하는 반도체 패키지
JP2015177062A (ja) * 2014-03-14 2015-10-05 株式会社東芝 半導体装置の製造方法および半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014179612A (ja) 2013-03-14 2014-09-25 General Electric Co <Ge> パワーオーバーレイ構造およびその製造方法

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