KR102231740B1 - 트리알킬갈륨 화합물의 제조 방법 - Google Patents

트리알킬갈륨 화합물의 제조 방법 Download PDF

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KR102231740B1
KR102231740B1 KR1020207012873A KR20207012873A KR102231740B1 KR 102231740 B1 KR102231740 B1 KR 102231740B1 KR 1020207012873 A KR1020207012873 A KR 1020207012873A KR 20207012873 A KR20207012873 A KR 20207012873A KR 102231740 B1 KR102231740 B1 KR 102231740B1
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compound
reaction mixture
gacl
trialkylgallium
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KR20200053625A (ko
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랄프 카르흐
안드레아 리바스-나스
애니카 프레이
토비아스 버커트
에일린 뵈르너
안젤리노 도피유
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우미코레 아게 운트 코 카게
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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/50—Improvements relating to the production of bulk chemicals
    • Y02P20/582—Recycling of unreacted starting or intermediate materials

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Catalysts (AREA)
KR1020207012873A 2011-11-28 2012-11-28 트리알킬갈륨 화합물의 제조 방법 Active KR102231740B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102011119487 2011-11-28
DE102011119487.1 2011-11-28
DE201210013941 DE102012013941A1 (de) 2012-07-16 2012-07-16 Verfahren zur Herstellung von Galliumtrialkylverbindungen
DE102012013941.1 2012-07-16
PCT/EP2012/073772 WO2013083450A1 (en) 2011-11-28 2012-11-28 Process for preparing trialkylgallium compounds

Related Parent Applications (1)

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KR1020147011622A Division KR102109904B1 (ko) 2011-11-28 2012-11-28 트리알킬갈륨 화합물의 제조 방법

Publications (2)

Publication Number Publication Date
KR20200053625A KR20200053625A (ko) 2020-05-18
KR102231740B1 true KR102231740B1 (ko) 2021-03-23

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KR1020207012873A Active KR102231740B1 (ko) 2011-11-28 2012-11-28 트리알킬갈륨 화합물의 제조 방법
KR1020147011627A Expired - Fee Related KR102071084B1 (ko) 2011-11-28 2012-11-28 Ｉｉｉａ족 금속의 트리알킬 화합물의 제조 방법
KR1020147011622A Expired - Fee Related KR102109904B1 (ko) 2011-11-28 2012-11-28 트리알킬갈륨 화합물의 제조 방법

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KR1020147011627A Expired - Fee Related KR102071084B1 (ko) 2011-11-28 2012-11-28 Ｉｉｉａ족 금속의 트리알킬 화합물의 제조 방법
KR1020147011622A Expired - Fee Related KR102109904B1 (ko) 2011-11-28 2012-11-28 트리알킬갈륨 화합물의 제조 방법

Country Status (9)

Country Link
US (2) US9108985B2 (https=)
EP (2) EP2785725B1 (https=)
JP (6) JP6165159B2 (https=)
KR (3) KR102231740B1 (https=)
CN (5) CN103958529A (https=)
IN (1) IN2014CN02940A (https=)
RU (2) RU2014126213A (https=)
TW (2) TWI632151B (https=)
WO (2) WO2013083449A1 (https=)

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Publication number Priority date Publication date Assignee Title
TWI632151B (zh) 2011-11-28 2018-08-11 烏明克股份有限兩合公司 第iiia族金屬的三烷基化合物之製法
US8513447B1 (en) * 2012-02-01 2013-08-20 Chemtura Corporation Preparation of tri-alkyl gallium or tri-alkyl indium compounds
TWI638803B (zh) 2013-08-22 2018-10-21 烏明克股份有限兩合公司 烷基銦化合物之製備方法及其用途
RU2016110114A (ru) 2013-08-22 2018-11-23 Умикоре Аг Унд Ко. Кг Способ получения алкилиндиевых соединений и их применение
JP6413801B2 (ja) * 2014-02-07 2018-10-31 宇部興産株式会社 トリアルキルガリウムの製造方法
US10428089B2 (en) * 2014-03-14 2019-10-01 Umicore Ag & Co. Kg Method for producing trialkylgallium compounds and the use thereof
EP3409676B1 (de) * 2017-05-29 2020-10-14 Umicore Ag & Co. Kg Herstellung von trialkylindiumverbindungen in gegenwart von carboxylaten
KR102228897B1 (ko) * 2017-10-31 2021-03-17 누리온 케미칼즈 인터내셔널 비.브이. 갈륨 클로라이드의 저장 및/또는 수송 방법
WO2019115377A1 (en) 2017-12-13 2019-06-20 Akzo Nobel Chemicals International B.V. Process for purification of dimethyl aluminium chloride

Citations (1)

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JP2002533348A (ja) * 1998-12-19 2002-10-08 エピケム リミテッド 有機金属化合物の製造のための改良された方法および装置

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DE4005726A1 (de) * 1989-04-28 1990-10-31 Messer Griesheim Gmbh Verfahren zur herstellung von galliumalkylverbindungen
US5043462A (en) * 1989-04-28 1991-08-27 Messer Greisheim Process for the production of gallium-alkyl compounds
US5473090A (en) 1992-07-02 1995-12-05 Air Products And Chemicals, Inc. Process for the preparation of trialkyl compounds of group 3a metals
US5350869A (en) 1993-07-27 1994-09-27 Cvd, Incorporated Purification of trialkylgallium, synthesis of trialkylgallium
US5756786A (en) 1997-06-25 1998-05-26 Morton International, Inc. High purity trimethylindium, method of synthesis
JP2000005503A (ja) 1998-06-24 2000-01-11 Nippon Shokubai Co Ltd 反応蒸留装置および反応蒸留方法
GB0017968D0 (en) 2000-07-22 2000-09-13 Epichem Ltd An improved process and apparatus for the isolation of pure,or substantially pure,organometallic compounds
KR100852361B1 (ko) * 2001-04-06 2008-08-14 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 트리알킬 ｖａ족 금속 화합물
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TWI632151B (zh) 2018-08-11
JP2017132788A (ja) 2017-08-03
RU2014126212A (ru) 2016-01-27
KR20140099862A (ko) 2014-08-13
WO2013083449A1 (en) 2013-06-13
JP6165160B2 (ja) 2017-07-19
JP2014534256A (ja) 2014-12-18
TW201329091A (zh) 2013-07-16
JP2021169529A (ja) 2021-10-28
EP2785725A1 (en) 2014-10-08
JP6165159B2 (ja) 2017-07-19
KR20140099863A (ko) 2014-08-13
CN103958528A (zh) 2014-07-30
US9108985B2 (en) 2015-08-18
CN108341834A (zh) 2018-07-31
CN108341834B (zh) 2021-05-25
TW201720834A (zh) 2017-06-16
TWI632149B (zh) 2018-08-11
JP2017105848A (ja) 2017-06-15
CN103958529A (zh) 2014-07-30
JP6983851B2 (ja) 2021-12-17
EP2785724A1 (en) 2014-10-08
EP2785724B1 (en) 2016-09-14
KR20200053625A (ko) 2020-05-18
EP2785725B1 (en) 2017-10-11
JP2015504439A (ja) 2015-02-12
US20140256974A1 (en) 2014-09-11
RU2014126213A (ru) 2016-01-27
CN109456345A (zh) 2019-03-12
JP6679527B2 (ja) 2020-04-15
US20140287141A1 (en) 2014-09-25
CN107021973A (zh) 2017-08-08
JP6644726B2 (ja) 2020-02-12
IN2014CN02940A (https=) 2015-07-03
WO2013083450A1 (en) 2013-06-13
KR102071084B1 (ko) 2020-01-29
US9695201B2 (en) 2017-07-04
JP2020019825A (ja) 2020-02-06
KR102109904B1 (ko) 2020-05-12

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