KR102216201B1 - 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치 - Google Patents

반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치 Download PDF

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KR102216201B1
KR102216201B1 KR1020207019773A KR20207019773A KR102216201B1 KR 102216201 B1 KR102216201 B1 KR 102216201B1 KR 1020207019773 A KR1020207019773 A KR 1020207019773A KR 20207019773 A KR20207019773 A KR 20207019773A KR 102216201 B1 KR102216201 B1 KR 102216201B1
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illumination
polarization
sample
output beam
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KR20200085938A (ko
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데이빗 와이. 왕
클라우스 플록
로렌스 디. 로터
샨카르 크리쉬난
비어 요하네스 디. 드
캐털린 필립
그레고리 브레이디
무잠밀 아라인
안드레이 스케그로프
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케이엘에이 코포레이션
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/8806—Specially adapted optical and illumination features
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Biochemistry (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Pathology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Optics & Photonics (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Spectrometry And Color Measurement (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
KR1020207019773A 2013-09-16 2014-09-15 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치 Active KR102216201B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361878561P 2013-09-16 2013-09-16
US61/878,561 2013-09-16
US14/043,783 US9116103B2 (en) 2013-01-14 2013-10-01 Multiple angles of incidence semiconductor metrology systems and methods
US14/043,783 2013-10-01
PCT/US2014/055666 WO2015039031A1 (en) 2013-09-16 2014-09-15 Multiple angles of incidence semiconductor metrology systems and methods

Related Parent Applications (1)

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KR1020167009901A Division KR102134943B1 (ko) 2013-09-16 2014-09-15 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치

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KR20200085938A KR20200085938A (ko) 2020-07-15
KR102216201B1 true KR102216201B1 (ko) 2021-02-15

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KR1020167009901A Active KR102134943B1 (ko) 2013-09-16 2014-09-15 반도체 샘플의 계측을 수행하기 위한 타원편광 측정기 장치

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EP (3) EP3971950B1 (enExample)
JP (6) JP6688732B2 (enExample)
KR (2) KR102216201B1 (enExample)
CN (1) CN105051877B (enExample)
IL (2) IL239666B (enExample)
WO (1) WO2015039031A1 (enExample)

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CN115290571A (zh) * 2022-08-16 2022-11-04 深圳市埃芯半导体科技有限公司 测量设备和测量方法
CN115389022B (zh) * 2022-08-19 2024-01-26 深圳市埃芯半导体科技有限公司 椭偏仪
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JP2025026544A (ja) 2025-02-21
EP3624174A3 (en) 2020-06-03
IL280388A (en) 2021-03-01
IL239666A0 (en) 2015-08-31
IL280388B (en) 2022-02-01
JP6688732B2 (ja) 2020-04-28
KR20160055908A (ko) 2016-05-18
EP3624174B1 (en) 2024-08-21
CN105051877A (zh) 2015-11-11
JP2022079538A (ja) 2022-05-26
WO2015039031A1 (en) 2015-03-19
EP3047520A4 (en) 2017-07-12
EP3971950B1 (en) 2024-11-06
IL239666B (en) 2021-02-28
JP2016536609A (ja) 2016-11-24
KR20200085938A (ko) 2020-07-15
JP2020128986A (ja) 2020-08-27
EP3971950A1 (en) 2022-03-23
EP3047520A1 (en) 2016-07-27
EP3624174A2 (en) 2020-03-18
CN105051877B (zh) 2019-02-22
KR102134943B1 (ko) 2020-08-26
JP2023014136A (ja) 2023-01-26
EP3047520B1 (en) 2019-11-06
JP2025081595A (ja) 2025-05-27

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