KR102159840B1 - 기판 액처리 방법, 기판 액처리 장치 및 기억 매체 - Google Patents

기판 액처리 방법, 기판 액처리 장치 및 기억 매체 Download PDF

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KR102159840B1
KR102159840B1 KR1020140023586A KR20140023586A KR102159840B1 KR 102159840 B1 KR102159840 B1 KR 102159840B1 KR 1020140023586 A KR1020140023586 A KR 1020140023586A KR 20140023586 A KR20140023586 A KR 20140023586A KR 102159840 B1 KR102159840 B1 KR 102159840B1
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liquid
substrate
nozzle
treatment
processing
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KR20140113348A (ko
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다케히코 오리이
나오키 신도
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/15—Cleaning before device manufacture, i.e. Begin-Of-Line process by wet cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof

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  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
KR1020140023586A 2013-03-15 2014-02-27 기판 액처리 방법, 기판 액처리 장치 및 기억 매체 Active KR102159840B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2013053579 2013-03-15
JPJP-P-2013-053579 2013-03-15
JP2014008085A JP6223839B2 (ja) 2013-03-15 2014-01-20 基板液処理方法、基板液処理装置および記憶媒体
JPJP-P-2014-008085 2014-01-20

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KR20140113348A KR20140113348A (ko) 2014-09-24
KR102159840B1 true KR102159840B1 (ko) 2020-09-24

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US (1) US20140261570A1 (https=)
JP (1) JP6223839B2 (https=)
KR (1) KR102159840B1 (https=)
TW (1) TWI579909B (https=)

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JP5779168B2 (ja) * 2012-12-04 2015-09-16 東京エレクトロン株式会社 周縁部塗布装置、周縁部塗布方法及び周縁部塗布用記録媒体
JP6341035B2 (ja) * 2014-09-25 2018-06-13 東京エレクトロン株式会社 基板液処理方法、基板液処理装置、及び記憶媒体
JP6410694B2 (ja) * 2014-10-21 2018-10-24 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置並びに基板液処理プログラムを記憶したコンピュータ読み取り可能な記憶媒体
US9627259B2 (en) 2014-11-14 2017-04-18 Kabushiki Kaisha Toshiba Device manufacturing method and device
KR20160057966A (ko) 2014-11-14 2016-05-24 가부시끼가이샤 도시바 처리 장치, 노즐 및 다이싱 장치
JP6305355B2 (ja) 2015-01-28 2018-04-04 株式会社東芝 デバイスの製造方法
JP6462462B2 (ja) 2015-04-01 2019-01-30 東芝メモリ株式会社 基板処理装置および基板処理方法
JP6545511B2 (ja) * 2015-04-10 2019-07-17 株式会社東芝 処理装置
JP6740028B2 (ja) * 2015-07-29 2020-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法および記憶媒体
JP6404189B2 (ja) * 2015-08-07 2018-10-10 東京エレクトロン株式会社 基板液処理装置、基板液処理方法及び記憶媒体
JP6573520B2 (ja) * 2015-09-29 2019-09-11 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP6588819B2 (ja) * 2015-12-24 2019-10-09 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
KR101817211B1 (ko) * 2016-05-27 2018-01-11 세메스 주식회사 기판 처리 장치 및 방법
KR20180003109A (ko) * 2016-06-30 2018-01-09 세메스 주식회사 기판 처리 장치 및 방법
JP6765878B2 (ja) * 2016-07-06 2020-10-07 東京エレクトロン株式会社 基板液処理方法及び基板液処理装置
JP2018129476A (ja) * 2017-02-10 2018-08-16 東京エレクトロン株式会社 基板処理装置
JP6925872B2 (ja) * 2017-05-31 2021-08-25 東京エレクトロン株式会社 基板液処理装置、処理液供給方法及び記憶媒体
KR101994420B1 (ko) * 2018-10-11 2019-07-01 세메스 주식회사 기판 처리 장치 및 방법
JP7301662B2 (ja) * 2019-07-29 2023-07-03 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7470785B2 (ja) * 2020-05-15 2024-04-18 株式会社荏原製作所 洗浄装置および洗浄方法
KR102583342B1 (ko) 2020-10-22 2023-09-26 세메스 주식회사 기판 처리 장치
JP7536671B2 (ja) * 2021-01-29 2024-08-20 キオクシア株式会社 基板処理装置
CN113035742B (zh) * 2021-02-10 2022-03-11 江苏亚电科技有限公司 一种半导体制造用晶圆清洗回收装置
KR102571748B1 (ko) * 2021-05-04 2023-08-25 세메스 주식회사 기판 처리 장치 및 방법
JP7839723B2 (ja) * 2022-11-30 2026-04-02 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
WO2025120716A1 (ja) * 2023-12-04 2025-06-12 東京エレクトロン株式会社 基板処理方法及び基板処理システム

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JP2003209087A (ja) * 2001-11-02 2003-07-25 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2010056420A (ja) * 2008-08-29 2010-03-11 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法

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JPH05251417A (ja) * 1992-03-06 1993-09-28 Babcock Hitachi Kk 洗浄装置
US20030148624A1 (en) * 2002-01-31 2003-08-07 Kazuto Ikemoto Method for removing resists
JP2004006672A (ja) * 2002-04-19 2004-01-08 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP4312997B2 (ja) * 2002-06-04 2009-08-12 東京エレクトロン株式会社 基板処理装置、基板処理方法及びノズル
JP2004335923A (ja) * 2003-05-12 2004-11-25 Sony Corp エッチング方法およびエッチング装置
US7622338B2 (en) * 2004-08-31 2009-11-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4324527B2 (ja) * 2004-09-09 2009-09-02 東京エレクトロン株式会社 基板洗浄方法及び現像装置
US20060286804A1 (en) * 2005-06-15 2006-12-21 Chuan-Yi Wu Method for forming patterned material layer
JP4527660B2 (ja) * 2005-06-23 2010-08-18 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP4901650B2 (ja) 2007-08-31 2012-03-21 東京エレクトロン株式会社 液処理装置、液処理方法および記憶媒体
JP4949338B2 (ja) * 2008-08-06 2012-06-06 東京エレクトロン株式会社 液処理装置
JP4788785B2 (ja) * 2009-02-06 2011-10-05 東京エレクトロン株式会社 現像装置、現像処理方法及び記憶媒体
JP5003774B2 (ja) * 2010-02-15 2012-08-15 東京エレクトロン株式会社 現像装置、現像方法及び記憶媒体
JP5797532B2 (ja) * 2011-02-24 2015-10-21 東京エレクトロン株式会社 有機溶剤を含有する現像液を用いた現像処理方法及び現像処理装置

Patent Citations (2)

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JP2003209087A (ja) * 2001-11-02 2003-07-25 Dainippon Screen Mfg Co Ltd 基板処理装置
JP2010056420A (ja) * 2008-08-29 2010-03-11 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法

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JP6223839B2 (ja) 2017-11-01
TWI579909B (zh) 2017-04-21
US20140261570A1 (en) 2014-09-18
JP2014199917A (ja) 2014-10-23
KR20140113348A (ko) 2014-09-24
TW201448018A (zh) 2014-12-16

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